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外文翻译---使用直流电弧等离子体喷射合成纳米级掺锑锡氧化物粒子.doc

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外文翻译---使用直流电弧等离子体喷射合成纳米级掺锑锡氧化物粒子.doc

英文原文SynthesisofnanosizedantimonydopedtinoxideATOparticlesusingaDCarcplasmajetKeywordsThermalplasmaAntimonydopedtinoxideATONanopowderAbstrctNanosizedantimonydopedtinoxideATOparticlesweresynthesizedusingDCarcplasmajet.TheprecursorsSnCl4andSbCl5wereinjectedintotheplasmaflameinthevaporphase.ATOpowdercouldconvenientlybesynthesizedwithoutanyotherposttreatmentinthisstudy.TocontrolthedopingamountofantimonyintheATOparticles,theSb/Snmolarratiowasusedasanoperatingvariable.Tostudytheeffectofcarriergasontheparticlesize,argonandoxygengaseswereused.TheresultsofXRDandTGAshowthatallSbionspenetratedtheSnO2latticetosubstituteSnions.WiththeincreasedSbCl5concentrationinsourcematerial,theSbdopinglevelwasalsoincreased.Thesizeoftheparticlessynthesizedusingtheargoncarriergaswasmuchsmallerthanthatoftheparticlespreparedusingtheoxygencarriergas.Fortheargongas,PSAresultsandSEMimagesrevealthattheaverageparticlesizewas19nm.However,fortheoxygengas,theaverageparticlesizewas31nm.1.IntroductionSnO2isatypicalwidebandgapsemiconductoranditsconductivityisgenerallyrealizedbynonstoichiometryassociatedwithoxygenvacanciesintheSnO2lattice.However,thecontentofoxygenvacanciesinSnO2istypicallydifficulttocontrol.TinoxidedopedwithSb,Mo,andFhasbeenstudiedinthepastduetotheuniquepropertiesofthedopedtinoxidesuchaspreferableconductivityandtransparencyinvisiblelightwavelengthrange.Inparticular,Sbisconsideredthebestdopantduetoitsstability.AntimonydopedtinoxideATOisanntypesemiconductorwithelectronsinthetin5basedconductionbandprovidedbytheantimonydopant.TheconductivityandtransparencycanbecontrolledbyvaryingtheamountofSbdopantinsteadofbymanipulatingthenonstoichiometry.ATOhasbeenstudiedinthepasttomeasureitspropertiesoftheinherentelectrochromismaswellasitscapacityforuseinchargestorageandasacatalyst.AtlowSbdopinglevel,ATOhaspropertiesoftransparencyatthevisibleregionwithgoodconductivity,whilereflectinginfraredlight.ThesecharacteristicsenableATOtobeusedasatransparentelectrodeforelectrochemicaldevices,displays,andheatmirrorsandenergystoragedevices.HeavilydopedATOisagoodcatalystfortheoxidationofphenolandolefinandthedehydrogenationandammoxidationofalkenes.Thusfar,ATOparticleshavebeenmainlysynthesizedbysolidandliquidstatereactionmethod,suchassolidstatereaction,coprecipitation,ahydrothermalmethod,andasol–gelmethod.AlthoughsolidandliquidstatereactionsareconsideredsuitablemethodstosynthesizeATOnanopowder,theseapproachesrequirealargequantityofsolutionandorganicmaterials,longerprocessingtime,heattreatmentforcrystallization,filtration,anddryingprocess.Toovercometheseweakpoints,inthepresentworkweintroduceathermalplasmaprocesstosynthesizeATOnanopowders.Thethermalplasmaprocesshasuniquecharacteristicsforthepreparationofnanopowdersasitinvolveshightemperatureandaquenchingsystem.Inthispaper,nanosizedATOpowdersweresynthesizedbyanargonplasmajetatatmosphericpressure.TocontrolthedopingamountofATO,differentSb/Snmolarratioswereapplied.TheeffectsoftheSbdopantonthephasecompositionandparticlesizehavebeendiscussed.2.ExperimentalNanosizedATOwassynthesizedusinganargonplasmajetatatmosphericpressure.PrecursorsweretinIVchlorideSnCl4,99.9,AldrichCo.andantimonypentachlorideSbCl5,99,AldrichCo..BecauseSnCl4andSbCl5easilyevaporateatroomtemperatureandpressure,theywereinjectedintotheplasmaflameinavaporFig.1.SchematicdiagramofDCplasmajetforsynthesisofATOnanopowders.Table1ExperimentalconditionsforsynthesisofnanosizedpowderPlasmapower300A,6.9kWPlasmagasAr15l/minPressure750TorrDurationofexperiment10minSourcematerialsTinVIchloride99.9,AldrichCo.,feedrate0.41g/mincarriergasAr2l/minAntimonypentachloride99,AldrichCo.,feedrate0.076g/mincarriergasAr2l/minphasewithoutadditionalheating.Fig.1showsaschematicdiagramoftheDCplasmasystem.ThesourcematerialwasinjectedintotheplasmaflamethroughabubblerbycarriergasesofArandO2.Thecarriergasflowrateforinjectionofthesourcematerialswasmaintainedat2l/min.TheconcentrationofSbCl5inthesourcematerialwasvariedinordertocontrol

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