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MICROMAINSETTINGUPTHEFABRICATIONFACILITYALSO,ITISOFTENNECESSARYTOMAKEAMASKFOREACHOPTICALPROCESSWHICHADDSTOTHECOSTANDTIMEOFTHETOTALPROCESS5ALTHOUGHTECHNIQUESUCHASPHOTOLITHOGRAPHYHASASTRONGMERITINMASSPRODUCTION,ITISNOTSUITABLEFORFLEXIBLEMACHININGNEEDEDFORMICROMOLDANDPROTOTYPEFABRICATIONFORMICROSYSTEMSINORDERTOACHIEVECOSTEFFECTIVEANDFLEXIBLEMACHININGWITHOUTTHEUSEOFAMASK,NUMEROUSTECHNIQUESHAVEBEENDEVELOPEDINTHEMCSPLMECHANOCHEMICALSCANNINGPROBELITHOGRAPHYPROCESSPREVIOUSLYDEVELOPED,ATHINRESISTLAYERISSELECTIVELYREMOVEDBYTHEPROBETIPOFANATOMICFORCEMICROSCOPEAFMFOLLOWEDBYCHEMICALETCHINGTOFABRICATEMICROGROOVEPATTERNSONSILICONORMETALSURFACES6,7ASTHERESISTLAYER,MATERIALSSUCHASSIOANDSELFINSTEADOFGROOVES15THISPHENOMENONISENCOUNTEREDPARTICULARLYWHENTHERESISTLAYERISTHINANDTHENORMALLOADISRELATIVELYHIGHBECAUSETHETOOLTIPCANREADILYPENETRATETHERESISTLAYERCAUSINGDIRECTABRASIONBETWEENTHESHARPTIPANDTHESILICONSUBSTRATEDURINGTHEMECHANICALMACHININGPROCESSONETHEOTHERHAND,IFTHERESISTLAYERISTOOTHICK,ITBECOMESEXTREMELYDIFFICULTTOCONTROLTHENORMALLOADSUCHTHATONLYTHERESISTMATERIALWILLBEREMOVEDDURINGTHEMECHANICALMACHININGPROCESSINSUCHACASE,THEREISAVERYHIGHPROBABILITYTHATDIRECTCONTACTBETWEENTHETOOLANDTHEWORKPIECEWILLOCCURTHUS,HILLOCKFORMATIONISASIGNIFICANTPROBLEMINMICROPATTERNINGOFSILICONWHENGROOVEPATTERNSINTHERANGEOF1MMWIDTHAREDESIRED16,17INTHISWORK,THEMECHANISMOFHILLOCKFORMATIONDURINGMCSPLPROCESSAPPLIEDTOSILICONWORKPIECEWASINVESTIGATEDTHEMOTIVARESISTLAYERTOPREVENTTHEFORMATIONOFHILLOCKSINTHEMCSPLPROCESSCIRPANNALSMANUFACTURINGTECHNOLOGY592010259262OFSILICONTO,HSILICONONCONTENTSLISTSAVAILABLEATSCIENCEDIRECTCIRPANNALSMANUFACTURINGEPROBETIP,THICKNESSOFTHERESIST,ANDTHEAPPLIEDLOADDURINGRESISTMACHINING9,10FOREXAMPLE,MCSPLUSINGAFMOFFERSMACHININGRESISTCHEMICALETCHINGTHERESISTISREMOVEDBYTHECUTTINGACTIONOFTHETIPUNDERACONSTANTAPPLIEDLOADTHELOADISADJUSTEDSOTHATTHEDESIREDDEPTHOFCUTCANBEACHIEVEDAFTERMACHINING,THEPATTERNISSELECTIVELYFABRICATEDBYCHEMICALETCHINGATREGIONSWHERETHERESISTHASBEENREMOVEDTHREEDIMENSIONALSTRUCTURESASWELLASVARIOUSLINEPATTERNSCANBEFABRICATEDSUCCESSFULLYBYTHEMCSPLPROCESS8THEDIMENSIONSOFTHEFABRICATEDPATTERNDEPENDONTHESIZEOFTHEDEVELOPAPROCESSBYWHICHHILLOCKFORMATIONCANBEPREVENTEDDURINGMCSPLPROCESSFORGROOVEPATTERNWIDTHSINTHE1MMRANGEASAMEANSTOELIMINATETHEHILLOCKFORMATIONPROBLEMVARIOUSEXPERIMENTALCONDITIONSWEREINVESTIGATEDANDTHERESULTSWEREANALYZEDPARTICULARLY,ALAYEROFOCTADECYLTRICHLOROSILANEOTS,CH3CH217SIO3SAM,WHICHISCOMMONLYUSEDASANANTISTICTIONCOATINGINMEMSAPPLICATIONS18,WASEXPLOITEDASASECONDARYASSEMBLEDMONOLAYERSSAMSHAVEBEENUTILIZEDFORTHEIRABILITYTO2TIONWASTOBETTERUNDERSTANDTHEHILLOCKFORMATIONPROCESSANDTOPREVENTIONOFHILLOCKFORMATIONDURINGOTSSAMANDSIO2COATINGSTSOH,HJKIM,DEKIMYONSEIUNIVERSITY,REPUBLICOFKOREASPONSOREDBYDONGYOLYANG11INTRODUCTIONVARIOUSTECHNIQUESRELATEDTOMICROELECTROMECHANICALSYSTEMMEMSHAVEBEENDEVELOPEDTOFABRICATEMICROPATTERNSANDSTRUCTURESONSILICONBASEDMATERIALS14THESETECHNIQUES,HOWEVER,REQUIREEXTENSIVEEQUIPMENTANDHIGHCOSTSAREINVOLVEDARTICLEINFOKEYWORDSMICROMACHININGSILICONOTSSAMABSTRACTTHEFEASIBILITYOFUSINGADUALMACHININGCHARACTERISTICSUNDESIRABLEHILLOCKSTHEOUTERMFILM,WHICHINTURNSERVEDCOATINGBYMICROMACHININGANDCREATEPATTERNSONTHEBESUCCESSFULLYFABRICATEDJOURNALHOMEPAGEHTTP/EESCAPABILITYINTHETENSOFNANOMETERSCALE1113WHILEPATTERNSOFTENSOFMICROMETERSORLARGERCANBEFABRICATEDBYUSINGASHARPSTYLUSTYPEOFATOOLINCONJUNCTIONWITH3AXISPRECISIONACTUATORS14CORRESPONDINGAUTHOR00078506/SEEFRONTMATTERC2232010CIRPDOI101016/JCIRP201003084CHININGOFSILICONBYUSINGTHOUGHGROOVEPATTERNWIDTHSOFTENSOFMICROMETERSANDHUNDREDSOFNANOMETERSCOULDBEACHIEVEDUSINGTHEMCSPLPROCESS,PATTERNSIN1MMRANGECOULDNOTBEFABRICATEDWITHSUFFICIENTRELIABILITYWHENMCSPLPROCESSISAPPLIEDTOASILICONWORKPIECETOFABRICATEPATTERNSOFMICROMETERINSIZE,HILLOCKSAREOFTENFORMEDCOATINGSYSTEMCONSISTINGOFSIO2ANDOTSSAMTHINFILMSONTHEMICROWAFERWEREINVESTIGATEDWITHTHEAIMTOELIMINATETHEFORMATIONOFOSTOTSSAMCOATINGWASUSEDASASACRIFICIALLAYERTOPATTERNTHESIO2PATTERNTHESILICONSUBSTRATEAFTERSELECTIVELYREMOVINGTHEOTSSAMFANDKOHCHEMICALETCHINGPROCESSESFOLLOWEDTOREMOVETHESIO2LAYERSUBSTRATEBYTHISPROCESS,GROOVEPATTERNSOFABOUT1MMWIDTHCOULDASILICONWAFERWITHOUTTHEFORMATIONOFUNDESIRABLEHILLOCKSC2232010CIRPTECHNOLOGYLSEVIERCOM/CIRP/DEFAULTASP2EXPERIMENTALDETAILSMICROMACHININGEXPERIMENTSWEREPERFORMEDUSINGACUSTOMBUILTEQUIPMENTADIAMONDTIPWITHARADIUSOF1MMWASUSEDASTHECUTTINGTOOLFORMECHANICALMACHININGMACHININGWASPERFORMEDBYAPPLYINGANORMALLOADTOTHETOOLAGAINSTTHEWORKPIECESURFACEFOLLOWEDBYASCRIBINGMOTIONTOREMOVETHERESISTLAYERTHATWASCOATEDONTHEWORKPIECETHETOOLWASMOUNTEDATTHEENDOFAFLEXIBLESTAINLESSSTEELCANTILEVERSOTHATTHEAPPLIEDNORMALLOADDURINGMACHININGWOULDNOTBESENSITIVETOSURFACEWAVINESSASWELLASHORIZONTALMISALIGNMENTOFTHEWORKPIECETHEMOTIONOFTHETOOLWASCONTROLLEDBYAPCBASEDSYSTEMUSINGASETOFTHREEPRECISIONLINEARACTUATORSTHEPATHOFTHETOOLCOULDBEALTEREDREADILYBYPROGRAMMINGTHETOOLPATHINCLANGUAGEINORDERTOMONITORTHESTATEOFMECHANICALMACHINING,THECUTTINGORFRICTIONALFORCEWASMEASUREDDURINGTHEMACHININGPROCESSUSINGAFORCESENSORMACHININGWASPERFORMEDINACLEANROO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