鼎日DTM4015规格书.pdf

1 P Channel 30 V D S MOSFET FEATURES 100 Rg and UIS Tested APPLICATIONS Adaptor Switch Load Switch Power Management Mobile Computing Notes a Surface mounted on 1 x 1 FR4 board b t 10 s c Maximum under steady state conditions is 81 C W d Package limited PRODUCT SUMMARY VDS V RDS on Max ID A Qg Typ 40 0 0094 at VGS 10 V 18d 35 4 nC 0 0132 at VGS 4 5 V 18d S G D P Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA 25 C unless otherwise noted ParameterSymbolLimitUnit Drain Source Voltage VDS 40 V Gate Source Voltage VGS 20 Continuous Drain Current TJ 150 C TC 25 C ID 18d A TC 70 C 18d TA 25 C 14 7a b TA 70 C 11 7a b Pulsed Drain Current t 300 s IDM 70 Continuous Source Drain Diode Current TC 25 C IS 18d TA 25 C 3a b Avalanche Current L 0 1 mH IAS 20 Single Pulse Avalanche EnergyEAS20mJ Maximum Power Dissipation TC 25 C PD 52 W TC 70 C33 TA 25 C3 7a b TA 70 C2 4a b Operating Junction and Storage Temperature Range TJ Tstg 55 to 150 C Soldering Recommendations Peak Temperature e f 260 THERMAL RESISTANCE RATINGS ParameterSymbol Typical MaximumUnit Maximum Junction to Ambienta ct 10 sRthJA2633 C W Maximum Junction to CaseSteady State RthJC1 92 4 www din tek jp DTM4 S S D D D S GD SO 8 5 6 7 8 Top View 2 3 4 1 2 Notes a Pulse test pulse width 300 s duty cycle 2 b Guaranteed by design not subject to production testing SPECIFICATIONS TJ 25 C unless otherwise noted ParameterSymbol Test Conditions Min Typ Max Unit Static Drain Source Breakdown VoltageVDSVGS 0 V ID 250 A 40V VDS Temperature Coefficient VDS TJ ID 250 A 23 mV C VGS th Temperature Coefficient VGS th TJ4 6 Gate Source Threshold VoltageVGS th VDS VGS ID 250 A 1 2 5V Gate Source LeakageIGSSVDS 0 V VGS 20 V 100nA Zero Gate Voltage Drain CurrentIDSS VDS 40 V VGS 0 V 1 A VDS 40 V VGS 0 V TJ 55 C 5 On State Drain Currenta ID on VDS 10 V VGS 10 V 30A Drain Source On State Resistancea RDS on VGS 10 V ID 15 A 0 00760 0094 VGS 4 5 V ID 10 A 0 01080 0132 Forward Transconductancea gfs VDS 10 V ID 15 A 50S Dynamicb Input CapacitanceCiss VDS 15 V VGS 0 V f 1 MHz 4280 pFOutput CapacitanceCoss 427 Reverse Transfer CapacitanceCrss 382 Total Gate ChargeQg VDS 15 V VGS 10 V ID 10 A73110 nC VDS 15 V VGS 4 5 V ID 10 A 35 453 Gate Source ChargeQgs 10 6 Gate Drain ChargeQgd 11 6 Gate ResistanceRgf 1 MHz0 41 63 2 Turn On Delay Timetd on VDD 15 V RL 1 5 ID 10 A VGEN 10 V Rg 1 1122 ns Rise Timetr1122 Turn Off DelayTimetd off 4590 Fall Timetf816 Turn On Delay Timetd on VDD 15 V RL 1 5 ID 10 A VGEN 4 5 V Rg 1 55100 Rise Timetr82150 Turn Off DelayTimetd off 4080 Fall Timetf1326 Drain Source Body Diode Characteristics Continous Source Drain Diode CurrentISTC 25 C 18 A Pulse Diode Forward CurrentISM 70 Body Diode VoltageVSDIS 3 A VGS 0 V 0 74 1 2V Body Diode Reverse Recovery Timetrr IF 10 A dI dt 100 A s TJ 25 C 1836ns Body Diode Reverse Recovery ChargeQrr816nC Reverse Recovery Fall Timeta7 ns Reverse Recovery Rise Timetb11 www din tek jp DTM4 3 TYPICAL CHARACTERISTICS 25 C unless otherwise noted Output Characteristics On Resistance vs Drain Current Gate Charge 0 20 40 60 80 100 0 0 0 5 1 0 1 5 2 0 2 5 ID Drain Current A VDS Drain to Source Voltage V VGS 2 V VGS 3 V VGS 10 V thru 4 V 0 0000 0 0040 0 0080 0 0120 0 0160 0 0200 0 16 32 48 64 80 RDS on On Resistance ID Drain Current A VGS 4 5 V VGS 10 V 0 2 4 6 8 10 01530456075 VGS Gate to Source Voltage V Qg Total Gate Charge nC VDS 10 V VDS 20 V VDS 15 V ID 10 A Transfer Characteristics Capacitance On Resistance vs Junction Temperature 0 16 32 48 64 80 0 0 1 0 2 0 3 0 4 0 5 0 ID Drain Current A VGS Gate to Source Voltage V TC 25 C TC 125 C TC 55 C 0 1200 2400 3600 4800 6000 0 4 8 12 16 20 C Capacitance pF VDS Drain to Source Voltage V Ciss Coss Crss 0 6 0 8 1 0 1 2 1 4 1 6 1 8 50 25 0 25 50 75 100 125 150 RDS on On Resistance Normalized TJ Junction Temperature C ID 10 A VGS 10 V VGS 4 5 V www din tek jp DTM4 4 TYPICAL CHARACTERISTICS 25 C unless otherwise noted Source Drain Diode Forward Voltage Threshold Voltage 0 001 0 01 0 1 1 10 100 0 0 0 2 0 4 0 6 0 8 1 0 1 2 IS Source Current A VSD Source to Drain Voltage V TJ 150 C TJ 25 C 0 5 0 2 0 1 0 4 0 7 1 0 50 25 0 25 50 75 100 125 150 VGS th Variance V TJ Temperature C ID 250 A ID 1 mA On Resistance vs Gate to Source Voltage Single Pulse Power Junction to Ambient 0 000 0 010 0 020 0 030 0 040 0 050 0246810 RDS on On Resistance VGS Gate to Source Voltage V TJ 125 C TJ 25 C ID 15 A 0 20 40 60 80 100 0 0010 010 1110 Power W Time s Safe Operating Area 0 01 0 1 1 10 100 0 010 1110100 ID Drain Current A VDS Drain to Source Voltage V VGS minimum VGS at which RDS on is specified 100 s 100 ms Limited by RDS on 1 ms IDM Limited TA 25 C Single Pulse BVDSS Limited 10 ms 10 s 1 s DC ID Limited www din tek jp DTM4 5 MOSFET TYPICAL CHARACTERISTICS 25 C unless otherwise noted The power dissipation PD is based on TJ max 150 C using junction to case thermal resistance and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used It is used to determine the current rating when this rating falls below the package limit Current Derating 0 14 28 42 56 70 0 25 50 75 100 125 150 ID Drain Current A TC Case Temperature C Limited by Package Power Junction to Case 0 13 26 39 52 65 0255075100125150 TC Case Temperature C Power W Power Junction to Ambient 0 0 0 4 0 8 1 2 1 6 2 0 0255075100125150 TA Ambient Temperature C Power W www din tek jp DTM4 6 TYPICAL CHARACTERISTICS 25 C unless otherwise noted Normalized Thermal Transient Impedance Junction to Ambient 0 01 0 1 1 0 00010 0010 010 11101001000 Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration s Duty Cycle 0 5 0 2 0 1 0 05 0 02 Single Pulse t1 t2 Notes PDM 1 Duty Cycle D 2 Per Unit Base RthJA 81 C W 3 TJM TA PDMZthJA t t1 t2 4 Surface Mounted Normalized Thermal Transient Impedance Junction to Case 0 01 0 1 1 0 00010 0010 010 1110 Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration s Duty Cycle 0 5 0 2 0 1 0 05 0 02 Single Pulse www din tek jp DTM4 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