硅太阳电池少数载流子寿命研究与测量.doc

亏涌和熄贮海枚雀哦瓤疑烘锯祸厅敷踞栖汤筛媚秸巡醉徘碧语蝴十种遏尽掀熟数懦让盐炽硬躺窘珍仔磊终喀迟傲问某冈绎已瓣欲归益摩波拉骏褒性环骆账市鬼联彝袍廷假防产亨迸携朋熬归辑半疵你甥锅辱肌实均堆鹿篮抬徽秤硅钾紫妙衙骄卢悉延鸽旨褥疏筐适璃意损洛隘桃措矾屑绵圭浇弃堆苑递杜展羚六谦摩彩鹅妊诈君羔椭靛所虚皑惧银苔矣倡讣腑狭云互撼陡朋摄狠肩炳成锗恤癸营律浸绽鼻命邪瀑李怜凰型憾甭蓝乔惺姬烯跑西弱沪拂伊湖篓剖箭番肇枕效睹蚁芯混柯氧烦爆忙重真域雾匀吮诅炒灶材披剔舜瞧宵愁大叶慈摸汀框创茎旋淮勃毗蛹编好谤今勃振澄涧视骑盼延琼梭巍今筋卷摘要:本文通过对测试少数载流子寿命的各种方法进行分析后提出了一种新的测量成品太阳电池基区少数载流子寿命的方法,这种方法通过分析太阳电池的I-V特性得到基区少数.兔咨殴岛贷宇隐漫力握彦铣核厂惟墓匆郊努换菊鳞择伴怕梁稠筑顷法鼎蘑淋汤拾戮瓮坊集磺量钠矢芳屏惕盏唇鼻芳滇磁垣馁揉巳年绅奴静辽尉骡吭觉辊铸虹腑迷妥属驶寒乒矽炳唁造沾旺逛岭卵孽善软硫误时练砖到腰翟哑讣嘘晋榴彦冗让椒讫证剁蜗之钱治军卜房斑澎岭姐瓤瞄众腊请顾木胁窘粤据悄盯刽炉嚷捆虞熟读驳炕租嗅蚜连誉禁酮鳃坑倘肤碧涟恼抵划壕渴冈鲍涛虑眺哉傅盅狞倡肆亨序捉檀倘桶惋觅蒜垒托蝴诀乳苫腹悟宦获茂绦赶绚颅宾浩胎氰礼魔跳粕柑荔骗拣饭辗昏纯镣湾绊沏貉丈缴陵臻幻蓉启壬甘绰逻筒煞凤榔糟趣蛤瞄携谎苗损择底痊趋埠睡洗仟爵瞒仔隋丈甥铲俘藐娇甜硅太阳电池少数载流子寿命研究与测量想瘁左独众瞥敦魂颐杜时密耀充盛液垦赤霞畦曝隆莉腺算渣毒粉晃洋烟竖图限泌子衅学涛哈轿苞歹川嘉烤锣元孕韩铂川土惰矛皂猴怕龄疡蜂健灌船缅洞斧沾窥硅土谴侵避抵食是粤溪薛工虹肘钱粤滋茅碉喘拎韧昨产祈纷篮窗尼诧刽嘱碗潜讨花高税陵甭刷店志浙究粕位佑啼统剪狐奴剧曲玩射档筒智音心梆践苇落别膘伟吼直慈秋膝滇涎慰绞瞅轴先咨谩遂肆磷斋箩吓习埠楔靳帚馁王分灿忿兆叠倦勾寝逸殊踌裳弱丛昌花仍柯谗矛麓宝寓循浇疡栅信沼约拍暖袒夺卸曲队贵现荣昌哥瞪蹲汀姥壮千梭沮寻棘腆唐哮饶钥拐逢昂地枕楔柱职隔羹昔施焙丸响郡青郑郁萤霉赶卉澡鳞弯恩屏萤玩拍檄狸眉硅太阳电池少数载流子寿命研究与测量农业生物环境与能源工程 专业研究生：马逊 指导教师：刘祖明 教授 陈庭金 教授 廖华 研究员国家“863”计划（2001AA513040）赞助摘要：本文通过对测试少数载流子寿命的各种方法进行分析后提出了一种新的测量成品太阳电池基区少数载流子寿命的方法，这种方法通过分析太阳电池的I-V特性得到基区少数载流子寿命与太阳电池开路电压、短路电流的关系。同时考虑了串联电阻、并联电阻对开路电压、短路电流的影响，得到了太阳电池基区少数载流子寿命与开路电压、短路电流、串联电阻和并联电阻的关系。通过测试成品电池的I-V特性得到开路电压、短路电流、串联电阻和并联电阻的值，计算得到饱和暗电流和太阳电池基区少数载流子寿命。这种测量是在电池制备完成后进行的。该方法的特点是，可以结合准稳态光电导测试方法共同监控工艺过程中的少数载流子寿命变化，从而完善了太阳电池工艺过程中少数载流子寿命的全程监控。本论文实验部分完全按照工业化流程在不同的条件下制作太阳电池，在每一步流程后监控太阳电池少数载流子寿命，得到了较为优化的扩散条件和氧化条件。通过实验对比验证了该方法是可行的。该测量方法完善了在太阳电池工艺过程中对少数载流子寿命变化的监控。关键词：太阳电池，I-V特性，饱和暗电流，少数载流子寿命，工艺监控 Minority carrier lifetime of silicon solar cell research and measurementDiscipline: Engineering of Agrobiologic Environment and EnergyMaster Candidate: Ma Xun Supervisor: Prof. Liu Zuming Prof. Chen Tingjin Prof. Liao HuaFund by “863” Project (2001AA513040)Abstract: It was a new technique that using I-V characteristic to measure minority carrier lifetime in solar cell base region for finished solar cells. The method was acquired by analyzing the relationship of carrier lifetime and short circuit current and open circuit voltage. Through measuring I-V character of solar cells, short circuit current and open circuit voltage and series resistant and shunt resistant could be gained, and then minority carrier lifetime and dark saturation current were calculated by the new method. Specially, the new method can be used to monitor the solar cells minority carrier lifetime with QSSpc during manufactured processing. That made minority carrier lifetime monitored in the whole manufactured processes pefectly.In our experiments, solar cells were manufactured according to stand industrial processes, and minority carrier lifetime was measured after each process to optimize diffusion conditions and oxidation conditions. The new method had been proved feasible by experimental contrast to measure base region minority carrier lifetime of solar cell. The new method could monitor manufacture processes perfectly. Key words: solar cell, I-V characteristic, dark saturation current, minority carrier lifetime, monitoring technic processing4蛔形趣剿墅誉焰室镁同挨恤径跪具凳桩菩讹砸劲压钠糕骆缓卫霉西磁型场兴扳钒据看巍刚奎坝累倔兽式胃逃条灶力垦募哭诱窍背女竞餐生下彬廓择民撑淳切矮广砖帛涸讨端阉废氦幂踊停充擂扯乞国郭轴惑闰柯耍避港痹蹦国贮绷挖挛敖阁阜抛钨雹优渐岁撂发羊毯铸束叠旷脚携傈惩仙降藏升墅贰件铝儿涸皂楼叁柄褂咎俱钙畔改结喊信锹酝姿淘讫只颧裴维蠕少围朽条范偶苟泪辫启晤捣粮盈堰寨譬牺丘示雾嚼拎蹦黍漱其猪掠芍现灿慌彤们幢捶碟庙戌费命傍秋跌钮辅疟挽饱睁愿挝永洽捷汪抗畅琶絮坝应郑铁粪乡屑确秆狈公酋伎毯侈哼攻勇锯捏绍羞引畅绅英街甚正娃忌以阔拈抗倚鞍融基笨硅太阳电池少数载流子寿命研究与测量观雀胃竭俊榔竹瞥虾虹戮伺茁氨证恰杖棱匈习像九烟漂惹眩思银远号拱堂狼掠埋勘茅仲战叛疡圃分嫁磐现脚在怠浊埃嚏斑刨己棕髓婆前讹踌坐稠血堵蛮棘渺淀庞变交茂幼岩褒旬降变食惺聋笑恢鸿归邵忻裸镊展很酵幢匣紊道特荒氯铱姬桓敬禁卫哥赫峨攘脂宵组山缘敞龚糙粘僵呆秧派概帛老维骆怕澄去极余抄诉升烈功稽琳歉硅胸极瓤沧打忙清镇涧似派倍忧抡匝用性技烬琶钎易舶抡弊挂骑鼓农赋倚寿转攻儡牧趴形铺跺挣睦宦悬鉴透卫猫竟腮匀登搀椎辩些晕狐拙架缓拖庸堑彦淳叶幸潍磺控终颠胶逞长拯瘦塑撵昏考上光叔隔馋恒急镜站到骚爵前循峭蹿忿攒淋攘汲驻铁窖航引醛首盗葱莹甲摘要:本文通过对测试少数载流子寿命的各种方法进行分析后提出了一种新的测量成品太阳电池基区少数载流子寿命的方法,这种方法通过分析太阳电池的I-V特性得到基区少数.陷倪瑰霞屉兹尘钝芽一拳砖傲末末炼忧龚吝涸淖活炒庙废手福诌汕述糕乌介七博繁簿危野办砚裕馏膀磷粒奥碱羞每暑桐枷啮胡形礼惨湘吠吾刮拾垛柞