RF电路设计手册.doc

rf & wireless communications groupthe richardson electronics rf and wireless group serves the rapidly expanding global rf and wireless communications market and the radio and television broadcast industry. our product and sales team of rf and wireless engineers assists our customers in designing circuits, selecting cost effective components, planning reliable and timely supply, prototype testing and assembly.richardson supports these growth opportunities by partnering with many of the key rf and wireless component manufacturers. one of the keys to our successful relationships with our vendors is the visibility we give them to the worldwide demand for their current products and product development. richardsons global information system includes programs that our sales force use to forecast information that is shared with our product suppliers to assist them in predicting near and long- term demand and product life cycles. richardson has global distribution agreements with such leading semiconductor suppliers as anadigics, ericsson, m/a-com, motorola and stanford microdevices. in addition, richardson has partnerships with many niche rf and wireless suppliers to form the most comprehensive rf and wireless resource in the industry.the rf /microwave reference guide is a handbook for engineers who design with both active and passive components. we hope you find this guide to be a helpful and valuable reference tool that you will use regularly to design-in product needs.richardson electronics represents your source for rf and wireless products, offering product solutions, technical support, current product information and a broad selection of components. please contact your local richardson electronics sales offices which are listed on the back cover of this guide.iso9002 registered 800-737-6937 rf/microwave reference guidetable of contentsi. company richardson electronics overview . . . . . . . . . . . . . inside front cover richardson electronics line card . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 richardson electronics engineering resources . . . . . . . . . . . . . . . . . 3ii. reference charts greek alphabet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 smith chart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 power conversion table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 effect of vswr on transmitted power . . . . . . . . . . . . . . . . . . . . . . 7,8 wavelength and frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 connector maximum voltage and frequency. . . . . . . . . . . . . . . . . . 10 attenuator elements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 conversions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-13 equations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14-19iii. acronyms/glossary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20-31iv. important phone numbers/e-mail addresses . . . . . . . . . . . . . 32v. application notes:anadigics: esd precautionsericsson: inside rf power transistor-ericssonm/a-com: design with pin diodes (ag312) using microwave mixers as phase detectors (m506) intermodulation performance of mixers (m507) mmic control circuits, vswr, switching equations (m547) rf directional couplers & 3 db hybrids (m560) power/dividers/combiners (m561) mixers (m562) rf balun transformers (m565) rf hybrid devices (m568)motorola: fets in theory and practice (an211a/d) mounting stripline (an555/d) digital predistortion techniques for rf power amplifiers with cdmaapplications (ar629/d) impedance matching networks applied for rf power transistors (an721/d) thermal rating of rf power transistors (an790/d) power mosfets versus bipolar transistors (an860/d) how to read a spec sheet (an1107/d) rf ldmos power modules for gsm base station: optimum biasing circuit(an1643/d)the above application notes are available on richardsons website:/appnotes.asppermission has been granted from featured manufacturers to reproduce all of the material with- in this guide. the specifications of this guide are subject to change without notice. richardson electronics, ltd. assumes no liability for the use of the information contained herein. 2000 richardson electronics, ltd. 9/00iso9002 registered 1-800-737-6937 3rf semiconductors & active components:anadigics cmac ericsson filtronicghz technology kdi/triangle m/a-com microsemi motorolamtipacific monolithicsrf gainsemelabsiwardstanfordstellex/phoenixst microelectronicsumswatkins-johnsoninterconnects, passives & antenna products:amp amphenol ez formhuber & suhner johanson manufacturing johnson components kdi/trianglem/a-com maxradpacific wirelessqmirf gainrf power componentsradiallsdp components, inc.spectrum controltimes/polyphaserw.l. gorepower conversion products:advanced power tech. bussmancornell-dubilierdraloricferrazgeneral electrichigh energyhitachijenningslemmtenational electronics nissei-arcotroics powerexsemtechspectrum controlunilatorunited chemi-convishay sfernicewakefield engineeringwestcoderf/microwave reference guideengineering resourcesrichardson electronics-value-added services rf testing labsrichardson electronics can provide the following services:testing and sorting (binning) of dc parameters for bipolar and mosfet devices: bipolar v(br)cbo v(br)ces v(br)ceo v(br)ebo icbo ices iebo and hfe mosfet- v(br)dss idss igss vgs(th) vds(on) and gfsmatched devices:devices should be matched if being paralleled or used in a push-pull circuit hfe-dc current gain (for bipolar transistors) gfs- forward transconductance (for fets) gate threshold voltage (for fets) power gain (requires customer s test fixture) other parameters that customer may requireselection of transistors to specific parameter ranges: hfe-dc current gain (for bipolar transistors) gfs- forward transconductance (for fets) power gain (requires customer s test fixture other parameters that customer may requireselection of low leakage current devices: selection of devices with low reversed biased junction currentrf testing (requires customers test fixture): imd-intermodulation distortion ip3- third order intercept power output gain other parameters that customer may requireprovide hard copy of test datamodifications: branding to customer specifications cutting/milling of leads, flanges and studs special lead trimming and forming gold-plating of flanges and studs enlarge flange holescustom branding/marking: brand device with customer s part number color dots or letter codes for sorting and selection alphanumeric codes for date, lot, etc.the greek alphabet and its engineering usesnameupper caselower caseusesalphaaaabsorption factor, angles, angular acceleration, attenuation constant, common-base currentam plifition factor, deviation of state parameter, temperature coef ficient of resistance, ther mal-expansion coefficient, thermal diffusivitybetabbangles, common-emitter current-amplificationfactor, flux density, phase constant, wavelength costantgamma ggelectrical conductivity, grueneisen parameterdeltaddangles, damping coefficient (decay constant), decrement, increment, secondary-emission ratioepsiloneecapacitivity, dielectric coefficient, electric fieldintensity, electron energy, emmissivity, permit tivity,base of natural logarithms (2.7128)zetazzcoefficients, coordinates, impedanceetahhchemical potential, dielectric susceptibility (intrinsic capacitance), efficiency, hysteresis, intrinsicimpedance of a medium, intrinsic standoff ratiothetaqqangle of rotation, angles, angular phase dis placement,reluctance, thermal resistance, transit angleiotaiiinertiakappakkcoupling coefficient, susceptibilitylambda llline density of charge, permanence, photosensi-tivity, wavelengthmummamplification factor, magnetic permeability, micron,mobility, permeability, prefix micronunnreflectivityxixxoutput coefficient omicron o o pipppeltier coefficient, ratio of circumference to diameter (3.1416) rhorrreflection coefficient, reflection factor, resistivity,volume density of electric chargesigmassconductivity, stefan-boltzmann constant, summation,surface density of chargetauttperiod, propagation constant,. thomson coefficient,time constant, time-phase displacement, transmission factor upsilonuuadmittancephiffangles, coefficient of performance, contact potential,magnetic flux, phase angle, phase displacement, radi-ant fluxchiccanglespsiyyangles, dielectric flux, displacement flux, phasedifferenceomegawwangular frequency, angular velocity, ohms, resistance,solid angleiso9002 registered 1-800-737-6937 11rf/microwave reference guidesmith chartnormalized impedance and admittance coordinatespermission is granted as follows:(1) chart is reproduced with the courtesy of analog instrument co., box 950, newprovidence, nj 07974.(2) smith is a registered trademark of analog instrument co., box 950, newprovidence, nj 07974.power conversion tabledbmwattsdbmwattsdbmwattsdbmwattsdbmwatts30.01.0038.06.3146.039.8154.025162.0158530.21.0538.26.6146.241.6954.226362.2166030.41.1038.46.9246.443.6554.427562.4173830.61.1538.67.2446.645.7154.628862.6182030.81.2038.87.5946.847.8654.830262.8190531.01.2639.07.9447.050.1255.031663.0199531.21.3239.28.3247.252.4855.233163.2208931.41.3839.48.7147.454.9555.434763.4218831.61.4539.69.1247.657.5455.636363.6229131.81.5139.89.5547.860.2655.838063.8239932.01.5840.010.0048.063.1056.039864.0251232.21.6640.210.4748.266.0756.241764.2263032.41.7440.410.9648.469.1856.443764.4275432.61.8240.611.4848.672.4456.645764.6288432.81.9140.812.0248.875.8656.847964.8302033.02.0041.012.5949.079.4357.050165.0316233.22.0941.213.1849.283.1857.252565.2331133.42.1941.413.8049.487.1057.455065.4346733.62.2941.614.4549.691.2057.657565.6363133.82.4041.815.1449.895.5057.860365.8380234.02.5142.015.8550.010058.063166.0398134.22.6342.216.6050.210558.266166.2416934.42.7542.417.3850.411058.469266.4436534.62.8842.618.2050.611558.672466.6457134.83.0242.819.0550.812058.875966.8478635.03.1643.019.9551.012659.079467.0501235.23.3143.220.8951.213259.283267.2524835.43.4743.421.8851.413859.487167.4549535.63.6343.622.9151.614559.691267.6575435.83.8043.823.9951.815159.895567.8602636.03.9844.025.1252.015860.0100068.0631036.24.1744.226.3052.216660.2104768.2660736.44.3744.427.5452.417460.4109668.4691836.64.5744.628.8452.618260.6114868.6724436.84.7944.830.2052.819160.8120268.8758637.05.0145.031.6253.020061.0125969.0794337.25.2545.233.1153.220961.2131869.2831837.45.5045.434.6753.421961.4138069.4871037.65.7545.636.3153.622961.6144569.6912037.86.0345.838.0253.824061.8151469.8955070.010000rf/microwave reference guideeffect of vswr ontransmitted powerthe effect of vswr on transmitted powervswrreturn loss(db)trans. loss(db)volt refl. coeff.power trans(%)power refl. (%)1.000.0000.00100.00.01.0146.10.0000.00100.00.01.0240.10.0000.01100.00.01.0336.60.0010.01100.00.0 1.04 34.2 0.002 0.02 100.0 0.0 1.0532.30.0030.02630.40.0040.03729.40.0050.03828.30.0060.04927.30.0080.04026.40.0100.05125.70.0120.05224.90.0140.06324.30.0160.06423.70.0190.07523.10.0210.07622.60.0240.07722.10.0270.08821.70.0300.0899.30.7 1.19 21.2 0.033 0.09 99.2 0.8 1.2020.80.0360.09120.40.0390.10220.10.0430.1099.01.01.2319.70.0460.10419.40.0500.1519.10.0540.1618.80.0580.12718.50.0620.12818.20.0660.1298.51.5 1.29 17.9 0.070 0.13 98.4 1.6 1.3017.70.0750.13217.20.0830.14416.80.0930.15616.30.1020.1597.72.3 1.38 15.9 0.112 0.16 97.5 2.5 1.4015.60.1220.17215.20.1330.1797.03.01.4414.90.1440.18614.60.1550.19814.30.1660.19014.00.1770.2096.04.01.5213.70.1890.2413.40.2010.2613.20.2130.2295.24.8 1.58 13.0 0.225 0.22 94.9 5.1 1.6012.70.2380.23212.50.2500.2494.45.6transmitted powervswrreturn losstrans. lossvolt refl.power transpower refl. (db) (db) coeff. (%) (%) 1.6412.30.2630.24612.10.2760.2593.86.2 1.68 11.9 0.289 0.25 93.6 6.4 1.7011.70.3020.26211.50.3150.2693.07.01.7411.40.3290.27611.20.3420.28811.00.3560.28010.90.3700.29210.70.3840.29410.60.3980.30610.40.4120.3091.09.0 1.88 10.3 0.426 0.31 90.7 9.3 1.9010.20.4400.3210.00.4540.3249.90.4680.3289.810.21.969.80.4830.3289.510.5 1.98 9.7 0.497 0.33 89.2 10.8 2.009.50.5120.3388.911.12.507.40.8810.4381.618.43.006.01.2490.5075.025.03.505.11.6030.5669.130.9 4.00 4.4 1.938 0.60 64.0 36.0 4.503.92.2550.6459.540.55.003.52.5530.6755.644.45.503.22.8340.6902.93.1000.7149.051.0 6.50 2.7 3.351 0.73 46.2 53.8 7.002.53.5900.7543.756.37.502.33.8170.7641.558.58.002.24.0330.7839.560.58.502.14.2400.7937.762.3 9.00 1.9 4.437 0.80 36.0 64.0 9.501.84.6260.8134.565.510.001.74.8070.8233.166.911.001.65.1490.8330.669.412.001.55.4660.8528.471.613.001.35.7620.8626.573.514.001.26.0420.8724.975.115.001.26.3010.8823.476.616.001.16.5470.8822.177.917.001.06.7800.8921.079.0 18.00 1.0 7.002 0.89 19.9 80.1 19.000.97.2120.9019.081.020.000.97.4130.9018.181.925.000.78.2990.9214.885.230.000.69.0350.9412.587.5rf/microwave reference guidewavelength and frequencywavelength and frequencyfor all forms of wave, the velocity, wavelength, and frequency are related such that the product of frequency and wavelength is equal to the velocity. for microwaves, this relationship can be expressed in the formlfe =cwherel = wavelength in meters (m)f = frequency in hertz (hz)e = dielectric constant of the propagation mediumc = velocity of light (300,000,000 m/s)the dielectric (e) is a property of the medium in which the wave propagates. the value of e is defined as 1.000 for a perfect vacuum, and very nearly 1.0 for dry air (typically 1.006). in most practical applications, the value of e in dry airis taken to be 1.000. for mediums other than air or vacuum, however, the veloc- ity of propagation is slower, and the value of e relative to a vacuum is higher. teflon“, for example, can be made with dielectric constant values (e) from about2 to 11.frequency band designationsvoltage & frequencymaximum rated working voltagemaximum rated operating frequencyrf/microwave reference guideattenuator elementsnormalized dissipated power in “t” and p attenuator elementsattenuationpower dissipation (watts)(db)r1r2r30.25.014.014.0280.50.029.026.0540.75.043.037.0791.00.058.046.1031.25.072.054.1241.50.086.061.1468.1642.00.115.073.1876.1981.2142.75.157