AZ-PR光刻胶的数据资料

1、G线I线,G线I线通用光刻胶系列TOC o 1-5 h z HYPERLINK l bookmark26AZ1500系列高感光度标准G线正型光刻胶HighSensitivityStandardg-lmePositive-tonePhotoresist5 HYPERLINK l bookmark48AZ6100系列高感光度高耐热性G线正型光刻胶HighSensitivity&HighHeatStabilityg-linePositive-tonePhotoresist6 HYPERLINK l bookmark62AZ3100系列高感光度高附若性G线l线通用正型光刻胶HighSensitivit

2、y&HighAdhesiong-iCross-overPositive-tonePhotoresist7 HYPERLINK l bookmark84AZGXR600系列高感光度高附若性G线l线通用正型光刻胶HighSensitivity&HighAdhesiong-iCross-overPositive-tonePhotoresist8AZ5200E系列应用于lift-off工艺图形反转正/负可转换I线光刻胶ImageReversalPatternPosiNegaConvertiblePhotoresist9AZMIR700系列高感光度中解像度I线正型光刻胶Medium-HighResolu

3、tioni-linePositive-tonePhotoresist10AZMIR900系列厚膜高感光度高解像度I线正型光刻胶IhckfilmHighResohmoinlinePgtivegPhotczft)rHighd)5eImPlanteticnPlocs笛DUV光刻胶系列AZDX3200P系列应用于通孔图形的KrF正型光刻胶KrFExcimerLaserPositive-tonePhotoresistforContactHole12AZP4000系列超厚膜高感光度标准G线正型光刻胶AZDX5200P系列应用于沟IS及通孔图形的超高分辨率KrFAZP4000系列超厚膜高感光度标准G线正型光

4、刻胶UltraThickFilmHighSensitixityg-lmeStandardPositive-tonePhotoresist14AZ10XT系列应用于电镀工艺的超厚膜AZ10XT系列应用于电镀工艺的超厚膜.高分辨率I线正型光刻胶UltraThickFilmHigjiResolutioni-lineStandardPosmgtonePhotoresistfcrPlatingProcess15AZPLP系列应用于高精度电镀工艺的超厚膜正型光刻胶AZPLP系列应用于高精度电镀工艺的超厚膜正型光刻胶UltraThickFilmPositive-tonePhotoresistforFine-

5、PitchPlatingProcess16层/RELAAZAQUATAR系列应用于超高分辨率图形加工的顶部防反射涂层AZAQUATAR系列应用于超高分辨率图形加工的顶部防反射涂层AQUATARJI系列NonPFOS和NonPFOA的顶部防反射涂层AZBARC材料应用于超高分辨率图形加工的底部防反射涂层AZReises涂布材料应用于超高分辨率图形加工的光刻胶收缩材料 HYPERLINK l bookmark246TopAntiReflectiveCoatingforUltraHighResolutionPatterning17 HYPERLINK l bookmark260NonPFOSandN

6、onPFOAtypeTopAntiReflectiveCoatingMatenals18BottomAntiReflectiveCoatingforUltraHighResolutionPatterning19ResistShnnkingMaterialforUltraHighResolutionPatterning20AZ8100系列应用于TAB制造和柔性衬底工艺的正型光刻胶AZ8100系列应用于TAB制造和柔性衬底工艺的正型光刻胶Positne-tonePhotoresistfixTABnwnfactimngandProcessonFlexibleSubstrate21AZP1350系列应

7、用于光罩制造及光媒介原盘制造的旋涂正型光刻胶Positive-tonePhotoresistforPhotomask&StanperofPho3nediabySpinCoating22TOC o 1-5 h zAZTFP300系列应用于液晶面板制造的旋涂式正型I线光刻胶SpinCoatingPositive-tonePhotoresistforFlatPanelDisplay23AZTFP600系列应用于液晶面板制造的超高感光度.旋涂式正型光刻胶UltraHigh沁EitySpinCoatingPositive.tonePhotores说forFlatPanelDisplay24 HYPERL

8、INK l bookmark408AZSFP系列应用于第五代液晶面板制造的雄涂式正型光刻胶SpinCoatPositive-tonePhotoresistfor5thGenerationFlatPanelDisplays25AZSR系列应用于第五代以上液晶面板制造的Spin-less涂布正型光刻胶Spin-lessCoatPositi-e-tonePhotoresistforover5thGenerationFlatPanelDisplays26AZRFP系列应用于液晶面板制造的辐式涂布正型光刻胶RoUCoatPositive-tonePhotoresistForFlatPanelDispla

9、y27AZCTP系列应用于有机电致发光显示器阴极隔离的负型光刻胶Negative-toneResistforCathodeSeparatoronOrganicELDisplay28辅助化学品系列显彩液及其他相关化学品Developers,andotherancillanrchemicals29剥离液RemoversforPositive-TonePhotoresistandside-wallpolymer30IS0900MS014001品質環境QMSEMS15090:2000l&O14001:JS.AQ049JSAE1140JABQMS.EMSR001.RE005产品取用时的注意事项取用时安全

10、注意事项小心取用，远离热源.火星，火源。避免直接接触皮肤及眼睛，避免吸入蒸汽，建议穿戴合适的防护用品。请储存在原密封的存储容器中，并存放在干燥的暗室中。急救措施如果接触皮肤：用肥皂及清水清洗接触部位。如果接触眼睛：用清水冲洗至少15分钟.并送医。如果被吸入：移至空气新鲜处。物质安全资料表请确保在使用前阅读过物质安全资料表。SafetyandHandlingKeepawayfromheat,sparks,andopenflame.Adequateventilationshouldbeprovidedinworkareas.Avoidskia-eyescontactandbreathingvapo

11、rduringtheiise.ltisrecommendedtoweaipropersafetygears.Keepinasealedoriginalcontainerandstoreinadarkcoolplace.FirstAidIfskincontact:Washaffectedareaswithsoapandwater.Ifeyecontact:Immediatelyrinsewithwaterforlongerthan15minutesandseekmedicalattention.Ifmhale&Moveintofreshair.MaterialSafetyDataSheetBes

12、uretore-iewMaterialSafetyDataSheet(MSDS)fordetailedinfbrniatioxipriortouse.AZ光刻胶蓝图AZDUV光刻胶产品蓝图Z.UMJ9J鱼食一TargetCriticalDnnension(gm)AZG-线光刻胶产品蓝图AZI-线光刻胶产品蓝图(ulaU01SEU二a1.21.00.3AZ1500AZ6100(FT=2.0Km)“AZ6100AZ3100AZGXR600上.AZEXP(FT2；Ghm)-AZGXR600AZEXPHighRMouttoo1.21.003AZMIR950(FT=5.0nm)AZMR950:AZMIR

13、900A7MIRdOOAZMIR950(FT=3.0nm)(FT=3.0um)AZMIR900.:(FT=Z0Km)AZGXR600AZ3100，AZMIR703AZ靡7015010015050100150200Photospeed(nij/cnr)Photospeed(nij/cnr)AZ1500AZ1500系列光刻胶AZ1500AZ1500系列光刻胶g、g、i/clossover高感光度标准G线正型光刻胶为广泛应用于半导体制造领域而优化的高感光度G线正型光刻胶高感光度高产出率高附若性特别为湿法刻蚀工艺改进广泛应用于全球半导体行业参考工艺条件前烘:100C60秒(DHP)曝光:G线步进式曝光

14、机/接鯨式曝光机显彩:AZ300MIF(2.38%)23C60秒Puddle清洗:去离子水30秒后烘:120r120秒(DHP)剥离:AZ剥离液及/或复等离子体灰化HighSensitivityStandardg-linePositive-tonePhotoresistHighsensitivitybroad-band,g-lineposith-e-tonephotoresist.optimizedforwideproductionofsemiconductorFEATURESAchievementforhighsensitivityandhighthroughputImpro-ementfo

15、rwetetchingbyhighadhesionTrustondeliveryreferenceatwidefieldandindustrySAMPLEPROCESSCONDITIONSPre-bake:100C60sec.(DHP)Exposure:g-linestepperand-orContactAlignerDeveloping:AZ300NUF23X60sec.PuddleRinse:Dl-water30sec.Post-bake:120C120sec.(DHP)Stripping:AZRemoverandorO?plasma-ashingAZ1500AZ1500系列光刻胶AZ15

16、00AZ1500系列光刻胶AZ1500AZ1500系列光刻胶AZ1500AZ1500系列光刻胶产品型号产品型号(PRODUCTRANGE)产品特性(PRODUCTPERFORMANCE)AZ1500AZ1500系列光刻胶AZ1500AZ1500系列光刻胶AZ1500AZ1500系列光刻胶AZ1500AZ1500系列光刻胶ProductNameAZ1500Viscosity4.4mPa20mPa38mPa90mPaEthEop耐热性(ThermalStability)86msec.94msec.(l.lxEth)125CAZ1500AZ1500系列光刻胶AZ1500AZ1500系列光刻胶AZ15

17、00AZ1500系列光刻胶AZ1500AZ1500系列光刻胶SpinCurve5.03.0004.000SpinSpeed(ipm)t-4.4cP-20cP-a-3ScPf-90cP-O.O.O.O4321(us.)sswupn口uqDependencyofEthvs.ResistThickness1W2.0005.000201.01.52.02.5FilmThicknessQim)3.03.5604(2宫)IpmAZ1500AZ1500系列光刻胶AZ1500AZ1500系列光刻胶1.0iimLSPattern1.5j,imL/SPatternFilmThicknessSubstratePre

18、-bake1.0iimLSPattern1.5j,imL/SPatternFilmThicknessSubstratePre-bakeExposureDevelopingProcessConditionPatternProfiles:1.5pm(Photo.Left):3.0pm(Photo,Right):Bare-si4wafer:10090sec.(DHP):g-linestepper(NA=0.42):AZ300MIF(2.38%)23X?60sec.AZ6100AZ6100系列光刻胶AZ6100AZ6100系列光刻胶AAOSSOJO/Jbi)AAOSSOJO/Jbi)高感光度高热稳定性

19、G线正型光刻胶广泛应用于大规模集成电路的高感光度高热稳定性G线正型光刻胶特征通过提高光刻胶的热稳定性.从而改卷了干法刻蚀的工艺窗口高感光度带来了高产岀率很宽的膜厚范囤参考工艺条件前烘:100C60秒(DHP)曝光:G线步进式曝光机/接魅式曝光机显彩:AZ300MIF(2.38%)23C60秒Puddle清洗:去离子水30秒后烘:120C120秒(DHP)剥离:AZ剥离液及/或氧等离子体灰化产品型号(PRODUCTRANGE)HighSensitivity&HighHeatStability7g-linePositive-tonePhotoresistHighsensitivity&highhe

20、atstabilityg-linepositive-tonephotoresistforgeneralpurposesemicriticalprocessFEATURES1)ImprovementofdryetchingprocessmarginbyhighheatstabilityAchievementofhighthroughputbyhighsensitivityWideviscosityvariationSAMPLEPRESCONDITIONSPre-bake:100C60sec.(DHP)Exposure:g-linestepperandorContactAlignerDevelop

21、ing:AZ300MIF(2.38%)23C60sec.PuddleRinse:Dl-water30sec.Post-bake:120cC120sec.(DHP)Stripping:AZRemoverandorO?plasma-ashingAZ6100AZ6100系列光刻胶AZ6100AZ6100系列光刻胶AZ6100AZ6100系列光刻胶AZ6100AZ6100系列光刻胶ProductNameAZ6112AZ6124AZ6130Viscosity13mPa43mPa69niPa解像度(Resolution)AZ6100AZ6100系列光刻胶AZ6100AZ6100系列光刻胶AZ6100AZ6

22、100系列光刻胶AZ6100AZ6100系列光刻胶r-o耐热性(ThermalStability)125*C135”CAZ6100AZ6100系列光刻胶AZ6100AZ6100系列光刻胶SpinCurveSubstrate:BareSi4waferFilmThicknessSpinCurveSubstrate:BareSi4waferFilmThicknessPre-bakeExposureDeveloping;:1.3pm:100r90sec.(DHP):g-lineStepper(NA=0.54)110msec.:AZ300MIFDeveloper(2.38%)23C60sec.AZ310

23、0AZ3100系列光刻胶AZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶高感光度高附着性G线I线通用正型光刻胶G线I线通用高感光应高附着性正型光刻胶.特别为G线的关键层优化G线.I线通用通过提高光刻胶的热稳定性.从而改善了干法刻蚀的工艺窗口通过提高光刻胶的附若性.从而改罢了湿法刻蚀的工艺窗口HighSensitivity7&HighAdhesiong/iCrossoverPositive-tonePhotoresistHighsensitivity&highadhesion

24、g/icrossoverpositive-tonephotoresist,optimizedespeciallyforcritical-layerong-lineFEATURESRationalizationofproductrangebyexposxireofg/ilineCross-overIniprovenientofdryetchingprocessmarginbyhighheatstabilityIniprovenientofwetetcliingprocessmarginbyhighadhesionAZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶AZ3100AZ

25、3100系列光刻胶AZ3100AZ3100系列光刻胶参考工艺条件参考工艺条件SAMPLEPROCESSCONDITIONSAZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶前烘:100C60秒(DHP)曝光:G线/I线步进式曝光机显彩:AZ300MIF(2.38%)23C60秒Puddle清洗:去离子水30秒后烘:120C120秒(DHP)剥离:AZ剥离液及/或氧等离子体灰化Pre-bake:100C60sec.(DHP)Exposure:linestepperDeveloping:AZ300NUF23C60

26、sec.PuddleRinse:Dl-water30secPost-bake:120C120sec.(DHP)Stripping:AZRemoverand/orO2plasma-ashingAZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶产品型号产品型号(PRODUCTRANGE)曝光特性比较(EXPOSURECOMPARISON)AZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶ProductNameAZ3100Visc

27、osity20mPa42mPag线露光时(g-linestepperNA=0.42)Emax1.395pmthicknessEthmin.1.230pmthicknessEopmin.gl305pmthickress100msec75msec.145msec.AZ3100AZ3100系列光刻胶AZ3100AZ3100系列光刻胶SpinCurvei线露光时(i-linestepperNA=0.50)-42cPt-20cPEmax.1.0S5pmthicknessEthmin.1.140pmthicknessEopmin.1.0S5pinthickress90msec.75msec.115msec

28、.DOF特性(DOFPiopeity)g-lmestepperNA=0.420.8pmLSPattern耐热性(ThermalStability)g-lmestepperNA=0.500.6pmLSPatternAZGXR-600AZGXR-600系列光刻胶AZGXR-600AZGXR-600系列光刻胶8888高感光度高附着性G线I线通用正型光刻胶AZGXR600系列是G线I线通用高感光度高附着性正型光刻胶.特别符合高产岀率的需求特征G线.I线通用高感光度带来了高产出率通过提高光刻胶的附若性和热稳定性.改善了刻蚀的工艺窗口参考工艺条件前烘:100C60秒(DHP)曝光:G线/I线步进式曝光机曝

29、光后烘烤:11060秒(DHP)显彩:AZ300MIF(2.38%)23C60秒Puddle清洗:去离子水30秒后烘:120C120秒(DHP)剥离:AZ剥离液及/或氧等离子体灰化产品型号(PRODUCTRANGE)HighSensitivity7&HighAdhesiong/iCrossoverPositive-tonePhotoresistAZGXR600seriesishighsensitivitycross-overpositn-ietypephotoresistwhichcorrespondstothedemandofhighthroughputFEATURESItispossibl

30、etobeusedwithbothg-lineand1-lineToachievehighthroughputbyhighsensitivityImprovementofetchingprocessmarginbyhighadhesionandhighheatstabilitySAMPLEPROCESSCONDITIONSPre-bake:100C60sec.(DHP)Exposure:g-linestepperand/ori-linestepperPEB:110*C60sec.(DHP)Developing:AZ300NUF23C60sec.PuddleRinse:Dl-water30sec

31、.Post-bake:120C120sec.(DHP)Stripping:AZRemoverandorO?plasma-ashing露光特性比较(EXPOSURECOMPARISON)AZGXR-600AZGXR-600系列光刻胶AZGXR-600AZGXR-600系列光刻胶8888AZGXR-600AZGXR-600系列光刻胶AZGXR-600AZGXR-600系列光刻胶8888ProductNameAZGXR-601AZGXR-602Viscosity12mPa29mPaProductNameAZGXR-601AZGXR-602Eop100msec.(i-linelS0msec.(s-li

32、ne)140msec(i-lme)220msec(g-lue)AZGXR-600AZGXR-600系列光刻胶AZGXR-600AZGXR-600系列光刻胶8888SpinCurve解像度(Resolution)DOF特,性(DOFProperty)0.6岬1|-0.2pm0.4|Am-0.8j.oii0.2|Am0.6|AmAZGXR601(g-lme)0.6iimpatternAZGXR-600AZGXR-600系列光刻胶AZGXR-600AZGXR-600系列光刻胶8888ProcessConditionAZGXR-600AZGXR-600系列光刻胶AZGXR-600AZGXR-600系列

33、光刻胶8888耐热性(ThermalStability)Substrate:Bare-SiAZGXR-600AZGXR-600系列光刻胶AZGXR-600AZGXR-600系列光刻胶8888NoBake120C1309140CNoBake120C1309140CResistFilialThickness:1.305pm(g-line)1.108|.im(i-line)Pre-bake:90C60sec.(DHP)Exposure:g-lineori-linestepper(NA=0.54)PEB:llOC60sec.(DHP)Developing:AZ300MIFDeveloper(2.38%

34、)23rC60sec.(puddle)AZGXR-600AZGXR-600系列光刻胶AZGXR-600AZGXR-600系列光刻胶8888Post-bake:120sec.AZ5200EAZ5200E系列光刻胶AZ5200EAZ5200E系列光刻胶gwlossovergwlossover应用于Lift-offI艺图形反转正/负可转换型光刻胶高解像度图形反转正涣可改变型光刻胶.特别为lift-ofTI艺优化特征适用于高分辨率工艺(lift-offl艺)适用于正/负图形很宽的膜厚范围ImageReversalPatternPosi/NegaConvertiblePhotoresistImagere

35、versalpatternpositive/negative-tonephotoresist.optimizedforlift-offprocessFEATURESSuitableforHighresolutionprocess(liftprocess)Availableforpositive/negativepatterningWideviscosityvariationAZ5200EAZ5200E系列光刻胶AZ5200EAZ5200E系列光刻胶AZ5200EAZ5200E系列光刻胶AZ5200EAZ5200E系列光刻胶参考工艺条件参考工艺条件SAMPLEPROCESSCONDITIONSA

36、Z5200EAZ5200E系列光刻胶AZ5200EAZ5200E系列光刻胶AZ5200EAZ5200E系列光刻胶AZ5200EAZ5200E系列光刻胶前烘:100C60秒(DHP)曝光：I线步进式曝光机/接触式曝光机反转烘烤：110125t90秒(DHP):去离子水30秒全面曝光:310405mn(在曝光光源下全面照射)显彩:AZ300MIF(2.38%)23C3060秒PuddleAZDeveloped1：1)23C60秒Dipping:AZ400K(1：4)23C60秒Dipping清洗:去离于水30秒后烘:12or120秒(DHP)剥离:AZ剥离液及J或氧等离子体灰化Pre-bake:1

37、00C60sec.(DHP)ExposxireReversalBakeFloodExposure:i-linestepperand-orContactAligner:110125C90sec.(DHP):Dl-water30sec.:310405nm(WholefaceIrradiationatExposurelightsoxirce)Developing:AZ300NUF23C3060sec.Puddle:AZDeveloper(l:l)23C60sec.Dipping:AZ400K(l:4)23C60sec.DippingRinse:Dl-water30sec.Post-bake:120C

38、120sec.(DHP)Stripping:AZRemoverand/orO2plasma-ashingAZ5200EAZ5200E系列光刻胶AZ5200EAZ5200E系列光刻胶产品型号产品型号(PRODUCTRANGE)工艺条件依赖性(ProcessDependency)AZ5200EAZ5200E系列光刻胶AZ5200EAZ5200E系列光刻胶ProductNameAZ52O6EAZ5214EAZ5218EAZ52OONJViscosity7mPa25mPa40mPa85mPa1stExposureReversalBakeFloodExposureHighLowQ0AZ5200EAZ52

39、00E系列光刻胶AZ5200EAZ5200E系列光刻胶SpinCuneSpinSpeed(rpm)-*-5206E-O-5214E-521SE-90sec.(DHP):g-linestepperand-orContactAligner:AZ300NUFDeveloper23C60300sec.:Dl-water:120，C60sec.:AZRemoverand-orOnplasma-ashingAZP4000AZP4000系列光刻胶AZP4000AZP4000系列光刻胶产品型号(PRODUCTRANGE)ProductNameAZP4210AZP4330AZP4400AZP4620AZP490

40、3Viscosity49mPa115mPa160mPa400mPa1550mPaAZP4000AZP4000系列光刻胶AZP4000AZP4000系列光刻胶AZP4000AZP4000系列光刻胶AZP4000AZP4000系列光刻胶PatternProfilesAZP4000AZP4000系列光刻胶AZP4000AZP4000系列光刻胶AZP4000AZP4000系列光刻胶AZP4000AZP4000系列光刻胶FilmThickness3.5pmFilmThickness3.5niFilmThickness6.0iimFilmThickness3.5pm5.0nmLSPatternhidAli

41、i3.0pmLSPattern2.0iimLSPattern5.0pmUSPatternAZP4000AZP4000系列光刻胶AZP4000AZP4000系列光刻胶ExposureExposureDeveloping:g-lineStepper(NA=0.30):AZ400KDev.(l：4)Dip120sec.AZ10XTAZ10XT系列光刻胶AZ10XTAZ10XT系列光刻胶15151515应用于电镀工艺的超厚膜，高分辨率I线正型光刻胶超厚膜.高分辨率.高纵宽比I线正型光刻胶.适用于微电镀工艺1）髙分辨率.高纵宽比2）高附若性.对电镇工艺高耐受性3）多种粘度可供选择参考工艺条件UltraT

42、hickFilmHighResolutioni-linePositive-tonePhotoresistforPlatingProcessUltra-thickfilmhighresolutionandhighaspectratioposith-e-tonei-linephotoresistforniicro-platingprocessesFEATURESHighresolution,highaspectratioHightoleranceinplating,highadhesionproperty3riousviscosityvariationSAMPLEPROCESSCONDITIONS

43、AZ10XTAZ10XT系列光刻胶AZ10XTAZ10XT系列光刻胶15151515AZ10XTAZ10XT系列光刻胶AZ10XTAZ10XT系列光刻胶15151515前烘:100C90秒以上（DHP）瀑光：I线步进式曝光机/接触式曝光系统显影:AZ400K显影液（1：4）23C60300秒Dip:AZ300MIF显彩液23C60300秒清洗:去离子水后烘：120C60秒以上剥离:AZ剥离液及/或氧等离子体灰化产品型号（PRODUCTRANGE）Pre-bake:100C90sec.(DHP)Exposure:i-linestepperandorContactAlignerDeveloping

44、:AZ400KDeveloper(1:4)23C60300sec.Dip:AZ300MIFDeveloper23C60300sec.Rinse:Dl-water.Post-bake:120，C60sec.Stripping:AZRemoverandorO?plasma-ashingSpinCurveAZ10XTAZ10XT系列光刻胶AZ10XTAZ10XT系列光刻胶15151515ProductNameAZ10XT(220cP)10XT(520cP)Viscosity220mPa520mPa6,04.060KO0,014.090sec.(DHP)曝光:G线步进式曝光机/接魅武曝光系统Expos

45、ure:g-linestepperand-orContactAligner显彩:AZ303N显影液(1：5)23?C120300秒Developing:AZ303NDeveloper(1:5)23C120300sec.Dip清洗:去离子水30秒Rinse:Dl-water30$ec.后烘:90C90秒以上Post-bake:90C90sec.剥离:AZ剥离液及/或复等离子体灰化Stripping:AZRemoverand/orO?plasiua-ashing产品型号(PRODUCTRANGE)AZPLPAZPLP系列光刻胶AZPLPAZPLP系列光刻胶16,16,16,16,ProductNa

46、meAZPLP-30AZPLP-40Viscosity550mPa830mPa750mPaSpinCurvePlatingPiofiles75pm50um25gm10gmSpinSpced(rpm)f-PLP3O(554k:P)T-PLP3O(83(kP)T-PLP4D-PLPbOWOOcP)Sxibstrate:6inchBareSiwaferSubstrateFilmThicknessPre-bakeExposureDeveloping:4inchBareSi:30um:50C180sec.+150C300sec.:PLA-501F(Soft-contact):AZ400K(l:3)23e

47、C360sec.(DIP)HMDS:90sec.XporPre-bake:120C300sec.(Proximity)CoatingSequence:l)300rpmX5sec.2)XXXrpmX30sec.PlatingBehaviorAuplatingAfterstnppmgDeveloping25nihole(Crosssection)25卜onhole(Topiew):GB-II(CyanidAu/EEJA,pH=5.5)PlatingliquidPhotoresistthicknessPlatingheightPlatingtemp.&timeCurrentdensity:25um:

48、20中n:50Cfor40niin:O.SAdm2AZAZ顶部防反射涂层材料AZAZ顶部防反射涂层材料应用于超高分辨率图形加工的顶部防反射涂层应用于超高分辨率图形加工的顶部防反射涂层AZAQUATAR系列TopAntiReflectiveCoatingforUltraHighResolutionPatterningAZAZ顶部防反射涂层材料AZAZ顶部防反射涂层材料AZAZ顶部防反射涂层材料AZAZ顶部防反射涂层材料在超高分辨率下.有必要使用AZAQUATAR系列改善光刻胶线宽.并降低薄膜干涉造成的驻波效应AZAQUAIARseriesareessentialitemtoimprovethep

49、hotoresistlinewidthcontrolandreducestandingwa-escausedbythinfilminterferenceefiectsatUltrahighresolutionfromSub-halfmicrononwardsAZAZ顶部防反射涂层材料AZAZ顶部防反射涂层材料特征1）适用于各种高解像度I线/KrF/ArF特征1）适用于各种高解像度I线/KrF/ArF光刻胶2）提高了光刻胶表面的亲水性.有效地减少了显彩引起的缺陷3）水沼性溶液.因此适于加入现有的工艺中工？:条件必须根掲下层的光5?胶制定在AQUATAR漁韦时.AZEBR7030可以用子晶边去胶去

50、爰手木16用手AQUATAR豹宴FEATURESHighaffinityforvarioushighresolutionresistfori-line.KrF.andArFapplicationsHigheffectforreducingdevelopingdefectaccordingtounproveofaffinityofresistsurface.Easytobeequippedwithcurrentprocessduetopure-ater/soh-enttypeSAMPLEPROCESSCONDITIONSProcessConditionshouldbesetaccordingto

51、thematchingmithunderlyingphotoresistAZEBR7030shouldbeusedforEdgeBackRmseforAQUAIARcoatingprocess*DI-WatershouldbeusedforAQUATARstripping参考工艺条件条件11）涂布光刻胶2）前烘3）涂布AQUATAR4）前烘5）曝光6）曝光后烘烤7）显影条件41）涂布光刻胶2）前烘3）涂布AQUATAR4）前烘5）曝光6）AQUATAR剥离7）曝光后烘烤8）显影条件21）涂布光刻胶2）前烘3）涂布AQUATAR4）曝光5）曝光后烘烤6）显影条件31）涂布光刻胶2涂布AQUATA

52、R3）前烘4）曝光5）曝光后烘烤6）显影Condition1PhotoresistCoatPre-bakeAQUATARCoatPre-bakeExposurePEBDevelopingCondition4PhotoresistCoatPre-bakeAQUATARCoatPre-bakeExposureAQUATARStripPEBDevelopingCondition?PhotoresistCoatPre-bakeAQUATARCoatExposurePEBDevelopingCondition3PhotoresistCoatAQUATARCoatPre-bakeExposurePEBDe

53、velopingAZAZ顶部防反射涂层材料AZAZ顶部防反射涂层材料AZAZ顶部防反射涂层材料AZAZ顶部防反射涂层材料产品型号(PRODUCTRANGE)膜厚设定(FilmThicknessFitting)AZAZ顶部防反射涂层材料AZAZ顶部防反射涂层材料ProductNameAZAQUAIARAZAQl；AIARProductNameAZAQUAIARAZAQl；AIAR45AZAQU.AT.WII45AQUAT.U-ViExposurei-line(365nm)KrF(248nm)KrF(248nm)ArF(193nni)Keiracuseinaex1.441.481.431.45AZ

54、AQUATAR膜厚FilmThicknessofAZAQUATARAZAX2020PSwingCunewith/withoutTARC恳光波长(ExposureWaveLength)=4XAZAQUAIAR的曲折率(RefractiveIndexofAZAQUATAR)Resist-ASwingCurvewith/withoutAZAQUATARVIAZAZ顶部防反射涂层材料AZAZ顶部防反射涂层材料WithoutIARCWilhoul1ARCf-WithoutTARCf-WithoutTARC-n-WithAQUATAR-11-A3018f-WithoutTARCf-WithoutTARC-

55、n-WithAQUATAR-11-A3018NonPFOS和NonPFOA的顶部防反射涂层AZAQUATAJyil系列AQUATARi$aregisteredaademarkofAZElectronicMaterialsNonPFOS和NonPFOA的顶部防反射涂层NoilPFOSandNonPFOAtypeTopAntiReflectiveCoatingMaterialsAQUATAR-VI系列不含PFOS和PFOA可溶于水使用方法与现有的TARC材料相同特征1）适用于各种高分辨率I线，KrF/ArF光刻胶2）提高了光刻胶表面的亲水性.有效地减少了显影引起的缺陷3）酒于纯水及各种溶剂中.因此

56、适于加入现有的工艺中制程条件条件1=1）涂布光刻胶2）前烘3）涂布AQUATAR4）前烘5）曝光6）曝光后烘烤7）显影条件41）涂布光刻胶2）前烘3）涂布AQUATAR4）前烘5）曝光6）AQUATAR剥离7）曝光后烘烤8）显影AZAQUAIARAHIseriesarefreefromPFOSandPFOA.Thesematerialsarewater-soluble,andcanbeusedinthesamewayasexistingTARCmatenals.FEATURESHighaffinityforvarioushighresolutionresistfori-line.KrF.and

57、ArFapplicationsHigheffectforreducingdevelopingdefectaccordingtoimproveofaffinityofresistsurfaceItiseasytoequipwithcurrentprocessduetoPurewater/solventtypeSAMPLEPROCESSCONDITIONS条件2条件31）涂布光刻胶2）前烘3）涂布AQUATAR4）曝光5）曝光后烘烤6）显影1）涂布光刻胶2）涂布AQUATAR3）前烘4）曝光5）曝光后烘烤6）显影Condition1PhotoresistCoatPre-bakeAQUATARCoa

58、tPre-bakeExposurePEBDevelopingCondition?PhotoresistCoatPre-bakeAQUATARCoatExposurePEBDevelopingCondition3PhotoresistCoatAQUATARCoatPre-bakeExposurePEBDeveloping在AQCATAR冷布时AZEBR7030可以用于矗边去胶夫要手水TS-AQUATARJ1SCondition4PhotoresistCoatPre-bakeAQUATARCoatPre-bakeExposureAQUATARStripPEBDevelopingProcessCon

59、dinonshouldbe先taccoidingtothematchingwithunderlyingphotoresistAZEBR7030shouldbeusedforEdgeBackRmseforAQUATARcoatingprocess*DI-WatershouldbeusedforAQUATARstnppinE产品型号(PRODUCTRANGE)膜厚设定(FilmThicknessFitting)ProductNamewafersizeapplicationsAZAQUATAR-V1II.A2512inchArFAZAQUATAR训A3012mch8inchArF/KrFAZAQUA

60、TAR-VHI-A458inch-6inchKrFi-lme365nm248nm193nm6J3nniRefractiveIndex1.411.441.511.40kvalue0.00640.00130.00430AZAQUATAR膜厚FilmThicknessofAZAQUATAR光波长【ExposureWa*eLength)4XAZAQUATAR的曲折率(RefractiveIndexofAZAQUATAR)SwingcurvewithArFresist(AX1120P)AZAQUATAR-IE-An=1.52at193nmswingsupprcsionratio70.0%ResistFi