LTPS工艺流程与技术

Shanghai

Tianma

Micro

electronics

Co.,LtdLTPS工艺流程与技术AMOLEDZhao

Ben

Ganga-Si

&

LTPS,and

processKey

process

of

LTPSLTPS

process

flowSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.2.目录LTPS

:Low

Temperature

Poly-Silicona-Si

&

LTPS,

and

processSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.3.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.4.a-Si

TFT&

LTPS

TFTSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.5.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.6.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.7.LTPS&OLEDSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.8.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.9.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.10.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.11.+

dopingSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.12.Key

process

of

LTPSSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.13.CVD技术SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.14.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.15.去氢工艺SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.16.FTIR检测氢含量去氢工艺:高温烘烤;快速热退火;高温腔体或低能量激光去氢缓冲层作用:防止玻璃中的金属离子(铝,钡,钠等)在热工艺中扩散到LTPS的有源区,通过缓冲层厚度或沉积条件可以改善多晶硅背面的质量;有利于降低热传导,减缓被激光加热的硅冷却速率,利于硅的结晶SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.17.SSiiOO22,,

SSiiOO22//SSiiNNxxSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.18.四乙氧基硅烷SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.19.highcostSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.20.TEOS

oxide具有低针孔密度，低氢氧含量，良好的台阶覆盖性。SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.21.SiNx:具有高的击穿电压特性具备自氢化修补功能绝缘层选择广泛应用于非晶硅栅绝缘层与多晶硅的界面存在过多的缺陷和陷阱，易产生载流子捕获缺陷和阈值电压漂移，可通过SiO2/SiNx克服SiO2:台阶覆盖性与多晶硅界面匹配,应力匹配SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.22.一般采用SiNx，SiO2,而SiO2/SiNx结构可以得到良好的电学特性，和氢化效果SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.23.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.24.结晶技术SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.25.ELA

(Excimer

Laser

Annel)Sony公司提出，现在大部分多晶硅TFT公司采用line

beam工艺。Line

Beam

Scan

mode现在技术：XeFSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.26.晶化效果a-SiSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.27.P-SiPartially

melting

regimeNear-complete

melting

regimeMechanismof

ELAComplete

melting

regimeSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.28.MIC&MILC

(Metal

Induced

Lateral

Crystallization)SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.29.SPC（solid

phase

crystallization）SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.30.SPCSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.31.SPCELA晶粒：200-300nmComparison

of

different

backplaneSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.32.离子注入技术V族元素(P

,As,Sb)III族元素(B,Al,Ga)提供电子,形成N型半导体提供空穴,形成P型半导体SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.33.半导体掺杂:PH3/H2,B2H6/H2离子注入机离子束呈细线状或点状,难以得到大的电流束,采取扫描方式注入,产能低;通过质量分析装置控制注入剂量,均匀度2%离子云注入机离子束线状,电流束较长,产能较高,成本低;通过法拉第杯控制注入剂量,均匀度5%SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.34.LDDSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.35.方块电阻小于10K欧姆/□方块电阻40K---100K欧姆/□❏LDD作用：抑制“热载流子效应”❏❏以较低的注入量在源极/漏极端与沟道之间掺杂,形成一浓度缓冲区,等效串联了一个大电阻,水平方向电场减少并降低了电场加速引起的碰撞电离产生的热载流子几率注入剂量过少则造成串联电阻过高,使迁移率下降;注入剂量过多则会失去降低漏极端边缘电场强度的功能.LDDSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.36.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.37.Repair

broken

bonds

damaged

in

ion

dopingIncrease

conductance

of

doping

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.38.❏氢化处理的目的❏多晶硅晶粒间存在粒界态，多晶硅与氧化层间存在界面态，影响晶体管电性。氢化处理以氢原子填补多晶硅原子的未結合鍵或未飽和鍵，粒界态，氧化层缺陷，以及界面态，来减少不稳态数目，提升电特性：迁移率，阈值电压均匀性等。❏氢化处理方法❏

1.等离子体氢化法：利用含氢的等离子体直接对多晶体和氧化层做❏

处理❏

2.固态扩散法：SiNx薄膜作为氢化来源，特定温度烘烤使氢原子扩散进入多晶体和氧化层❏SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.39.氢化工艺SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.40.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.41.LTPS的主要设备TEOS

CVD激光晶化设备离子注入机快速热退火设备ICP-干刻设备HF清洗机PVD光刻机湿刻设备干刻设备CVDSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.42.共用产线设备LTPS设备OLE

D蒸镀封装SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.43.离子注入机AOI快速热退火设备激光晶化设备磨边清洗机SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.44SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.45FFS(

Fringe-Field

Switching

)&IPS(In-Plane

Switching).January

2346LTPS-TNLTPS-OLEDLTPS-IPS47GateActiveSDPassivationITO

PixelPoly（多晶硅刻蚀）CHD（沟道掺杂）M1

（gate层）ND（n+掺杂）PD（

p+掺杂）M2

（SD层）PV

（passivation）Via

1（过孔1）RE（反射电极）PDL（像素定义层）SpacerSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTDL.

TPS-OLEDa-Si工艺Via

2

（平坦化层）Poly（多晶硅刻蚀）CHD（沟道掺杂）M1

（gate层）ND（n+掺杂）PD（

p+掺杂）M2

（SD层）PV

2（passivation）Via

1（过孔1）ITO1Via

2

（平坦化层）ITO2LTPS-IPS.玻璃基板Glass玻璃投入清洗LTPS

process

flow预处理SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.48.RTA

System

OverviewModel：YHR-100HTCST

Port（3个）CST

Robot（1个）Chamber

（2个）Cooling

stage（4层）SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.49.沉积缓冲层\有源层GlassPECVD缓冲层+有源层有源层缓冲层去氢防止氢爆清洗SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.50.GlassC,UV

SLOPE多晶硅晶化Spin

clean

晶化多晶硅测量XRD,RAMAN,SEM,AFM,MISHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.51.GlassN-channelDriver

areaPixel

areaP-channelP-Si刻蚀(mask1)SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.52.光刻干刻P-Si去胶P-Si刻蚀(mask1)Taper

49SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.53.PRB+P-channelN-channel光刻沟道掺杂(maskChannel

doping补偿vth2)去胶GlassN-channelDriver

areaPixel

areaP-channelSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.54.沟道掺杂SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.55.PRN+掺杂(mask3)GlassP-channelN-channelDriver

areaPHX+第3次光刻N+doping

灰化去胶Pixel

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.56.N+掺杂(mask3)SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.57.GATE

InsulatorPECVD

GIPixel

areaP-channelN-channelDriver

areaSpin清洗GlassSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.58.PRPRPRPRGlassN-channelDriver

areaPixel

areaP-channelGate层（mask4）Spin清洗Gate成膜光刻PRSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.59.N-channelDriver

areaPixel

areaGate刻蚀(干刻)GlassP-channelECCP干刻去胶SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.60.Gate刻蚀(干刻)Taper

53GI

loss~350ATaper

46GI

loss~0ASHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.61.LLDDDD掺掺杂杂PHX+LDD

DopingLDD

DopingP-channelGate掩膜LDDGlassN-channelDriver

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.62.Pixel

areaPRPRGlassB+

DopingP-channelN-channelDriver

areaPP++掺掺杂杂((mmaaskk55))s第5次光刻P+

doping灰化

去胶Pixel

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.63.P+掺杂SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.64.GlassN-channelDriver

areaPixel

areaP-channelILD成膜与活化（氢化）BHF清洗ILD成膜活化(氢化）SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.65.GlassN-channelDriver

areaPixel

areaP-channel光刻Via1(mask6)ICP刻蚀去胶SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.66.通孔刻蚀SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.67.通孔刻蚀SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.68.SD层(mask7)GlassN-channelDriver

areaPixel

areaP-channelBHF清洗SD成膜光刻ECCP干刻去胶Metal

annealSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.69.Power↓Ar

↓成膜温度↓SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.70.SD成膜SD干刻SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.71.GlassN-channelDriver

areaPixel

areaP-channel清洗Passivation层SiNx成膜(mask8)光刻

ICP

orRIE去胶SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.72.Passivation层SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.73.平坦化层(mask9)清洗涂布有机膜光刻GlassPixel

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.74.P-channelN-channelDriver

area平坦化层LTPS（TN）LTPS-OLEDLTPS-IPSSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.75.像素电极清洗GlassPixel

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.76.P-channelN-channelDriver

areaITO镀膜光刻去胶电极刻蚀(mask10)退火湿刻GlassPixel

areaP-channelN-channelDriver

areaLTPS-TN

array完成SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.77.反射电极清洗Ag镀膜GlassPixel

areaP-channelN-channelDriver

areaITO镀膜ITO镀膜SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.78.光刻去胶电极刻蚀(mask10)退火湿刻GlassPixel

areaP-channelN-channelDriver

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.79.电极刻蚀(mask10)SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.80.PDL/Spacer层(mask11/12)for

OLEDGlassPixel

areaSHANGHAI

TIANMA