工艺技术_浅析半导体工艺技术

半导体工艺技术半导体工艺技术 Semiconductor Process Technology (Lecture Notes) 复旦大学复旦大学 信息科学技术学院微电子学系信息科学技术学院微电子学系 微电子研究院微电子研究院 李炳宗李炳宗 2004.3 Semiconductor Process Technology Contents Chapter 1. Progress and Main Factors of Semiconductor Technology ? Invention of Transistor and Integrated Circuits ? From SSI to VLSI/ULSI/SLSI ? Device Miniaturization-The Key of Progress ? Micro-fabrication Technology-The Way to Progress ? Si and its based Thin Films-The Material Base for Progress ? Moores Law ? Semiconductor Technology Roadmap ? Leading Edge CMOS Technology ? Microelectronics Revolution and Information Age ? From Micro- to Nano- Chapter 2. Basic VLSI/ULSI Fabrication Process Technology ? Evolution of IC Process Technology ? Main LSI/VLSI processes developed in history ? CMOS core based ULSI technology-basis of present Microelectronics ? Main elemental devices and process flow of IC fabrication ? Major chip fabrication material and technology ? Ultra clean technologies-of vital importance for VLSI/ULSI manufacturing Chapter 3 CMOS Process Technology ? Evolution of Si MOSFET ? Si substrate selection for MOS devices ? Basic structure and advantage of CMOS ? Formation of two types MOSFETs on the same Si substrate ? CMOS Device isolation ? A typical CMOS fabrication process flow ? Latch-up effect in CMOS devices ? Sub-micron CMOS device engineering optimization -Well engineering -Channel engineering -Source/drain doping engineering -Salicide (Self-aligned silicide) process engineering Chapter 4 Basic Bipolar and BiCMOS Process Technology ? Requirements and structure of bipolar devices for high performance IC ? Main fabrication process of oxide isolation bipolar IC ? Poly-Si self-aligned (PSA) process for bipolar VLSI technology ? SBD clamps for better speed performance of bipolar logic IC ? Hetro-junction bipolar transistor (HBJT or HBT) technology ? BiCMOS technology Chapter 5. Device Scaling-down Principles and Limitations ? MOS device downscaling principles ? Verification of scaling relationship of device parameters ? Practical scaling for MOS devices ? Bipolar device scaling ? Two approaches of deep submicron CMOS device scaling -High-performance and Low-power ? Semiconductor technology roadmap based on scaling-down principle ? Device scaling limitation ? Exploration of the nanometer CMOS technology Chapter 6 SiO2, Si/SiO2 Interface and High-k/Low-k Dielectrics ? SiO2-one of the key materials for semiconductor technology ? Structure of SiO2 films ? Growth mechanisms of thermal oxide ? Deal-Grove model of oxidation kinetics ? Oxidation rate dependence on T, P, Orientation ? Impurity effects on oxidation rate ? Si/ SiO2 Interface and Oxide traps ? Other properties of thermal SiO2 ? High-k and low-k dielectrics Chapter 7 Lithography ? Fine line lithography Key for micro-fabrication ? Progress of patterning technology ? Optical alignment and exposure system ? Photoresist ? Optical lithography for sub-micron fabrication ? Light sources for optical lithography ? Phase shifting mask technology ? Novel lithography technology beyond Optical Chapter 8 Ion Implantation ? Basic Principle and Method ? Interaction Between Incident Ions and Substrate Atoms ? Stopping Power and Projected Range ? Ion Channeling Effect ? Implant Damage ? Thermal Annealing Chapter 9 Diffusion ? Diffusion Mechanism 1. Interstitial Diffusion 2. Substitutional Diffusion 3. Interstit