A09T,AO9T场效应管三极管PL4009.pdf

Symbol VDS VGS IDM TJ, TSTG SymbolTypMax 6590 85125 RJL4360 W Maximum Junction-to-Lead C Steady-StateC/W Thermal Characteristics ParameterUnits Maximum Junction-to-Ambient A t 10s RJA C/W Maximum Junction-to-Ambient A Steady-State C/W 12Gate-Source Voltage Drain-Source Voltage30 Continuous Drain Current A MaximumUnitsParameter TA=25C TA=70C Absolute Maximum Ratings TA=25C unless otherwise noted V V 4.9 30Pulsed Drain Current B Power Dissipation A TA=25C Junction and Storage Temperature Range A PD C 1.4 1 -55 to 150 TA=70C ID 5.8 PL4009 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) General Description The PL4009 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product PL4009 is Pb-free (meets ROHS & Sony 259 specifications).PL4009A is a Green Product ordering option. PL4009 and PL4009A are electrically identical. G D S S G D TO-236 (SOT-23) Top View PuLan Technology, Ltd. SymbolMinTypMaxUnits BVDSS30V 1 TJ=55C5 IGSS100nA VGS(th)0.71.11.4V ID(ON)30A 22.828 TJ=125C3239 27.333 m 43.352 m gFS1015S VSD0.711V IS2.5A Ciss8231030pF Coss99pF Crss77pF Rg1.23.6 Qg9.712nC Qgs1.6nC Qgd3.1nC tD(on)3.35ns tr4.87ns tD(off)26.340ns tf4.16ns trr1620 ns Qrr8.912nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Gate resistanceVGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS IF=5A, dI/dt=100A/s VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=4.5V, VDS=15V, ID=5.8AGate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=2.7, RGEN=3 m VGS=4.5V, ID=5A IS=1A,VGS=0V VDS=5V, ID=5A RDS(ON)Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSSA Gate Threshold VoltageVDS=VGS ID=250A VDS=24V, VGS=0V VDS=0V, VGS=12V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25C unless otherwise noted) STATIC PARAMETERS ParameterConditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/s Drain-Source Breakdown Voltage On state drain current ID=250A, VGS=0V VGS=2.5V, ID=4A VGS=4.5V, VDS=5V VGS=10V, ID=5.8A Reverse Transfer Capacitance A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the users specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 4 : June 2005 PuLan Technology, Ltd. PL4009 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 5 10 15 20 25 012345 VDS (Volts) Fig 1: On-Region Characteristics ID (A) VGS=2V 2.5V 3V 4.5V 10V 0 4 8 12 16 20 00.511.522.53 VGS(Volts) Figure 2: Transfer Characteristics ID(A) 10 20 30 40 50 60 05101520 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage RDS(ON) (m ) 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 0.00.20.40.60.81.01.2 VSD (Volts) Figure 6: Body-Diode Characteristics IS (A) 25C 125C 0.8 1 1.2 1.4 1.6 1.8 0255075100125150175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Normalized On-Resistance VGS=2.5V VGS=10V VGS=4.5V 10 20 30 40 50 60 70 0246810 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage RDS(ON) (m ) 25C 125C VDS=5V VGS=2.5V VGS=4.5V VGS=10V ID=5A 25C 125C PuLan Technology, Ltd. PL4009 PL4009 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 1 2 3 4 5 024681012 Qg (nC) Figure 7: Gate-Charge Characteristics VGS (Volts) 0 200 400 600 800 1000 1200 1400 051015202530 VDS (Volts) Figure 8: Capacitance Characteristics Capacitance (pF) Ciss 0 10 20 30 40 0.0010.010.11101001000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) Power (W) 0.01 0.1 1 10 0.000010.00010.0010.010.11101001000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Z JA Normalized Transient Thermal Resistance CossCrss 0.1 1.0 10.0 100.0 0.1110100 VDS (Volts) ID (Amps) Figure 9: Maximum Forward Biased Safe Operatin