S8550三极管规格书：三极管S8550参数与封装尺寸.pdf

SOT-23 1. BASE 2. EMITTER 3. COLLECTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURES ? Complimentary to S8050 ? Collector current: IC=0.5A MARKING : 2TY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min MaxUnit Collector-base breakdown voltage V(BR)CBO IC = -100A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 A Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 A Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 A hFE(1) VCE= -1V, IC= -50mA 120 400 DC current gain hFE(2) VCE= -1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V Transition frequency fT VCE= -6V, IC= -20mA f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank L H J Range 120-200 200-350 300-400 C,Mar,2013 【南京南山半导体有限公司 长电贴片三极管选型资料【南京南山半导体有限公司 长电贴片三极管选型资料】 -0-2-4-6-8-10-12 -0-300-600-900-1200 -1 -10 -100 -1-10-100 10 100 -0.1-1-10 1 10 0255075100125150 0 100 200 300 400 -1-10-100 -400 -800 -1200 -1-10-100 -10 -100 -1-10-100 10 100 -90 -80 -70 -60 -50 -40 -30 -20 -10 COMMON EMITTER Ta=25 -400uA -360uA -320uA -280uA -240uA -200uA -160uA -120uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) IC VCE IB=-40uA -80uA -0 -500 VBE IC Ta=25 Ta=100 COMMON EMITTER VCE=-1V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) IC COMMON EMITTER VCE=-6V Ta=25 TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) 400 -20 VCB/VEBCob/Cib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) Cib Cob f=1MHz IE=0/IC=0 Ta=25 50 PC Ta COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta () fT -500 Ta=100 Ta=25 =10 ICVBEsat BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) -500 Typical CharacteristicsS8550 -500 =10 Ta=25 Ta=100 ICVCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=-1V DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=25 Ta=100 hFE IC 500 -500 C,Mar,2013 【南京南山半导体有限公司 长电贴片三极管选型资料【南京南山半导体有限公司 长电贴片三极管选型资料】 Min.Max.Min.Max. A0.9001.1500.0350.045 A10.0000.1000.0000.004 A20.9001.0500.0350.041 b0.3000.5000.0120.020 c0.0800.1500.0030.006 D2.8003.0000.1100.118 E1.2001.4000.0470.055 E12.2502.5500.0890.100 e e11.8002.0000.0710.079 L L10.3000.5000.0120.020 0808 0.550 REF.0.022 REF. Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP.0.037 TYP. 【南京南山半导体有限公司 长电三极管选型资料【南京南山半导体有限公司 长电三极管选型资料】 The bottom gasket The top gasket 30001 PCS 300015 PCS Label on the Reel Label on the Inner Box Label on the Outer