芯片器件简介介绍PPT.ppt

芯片元器件 device snapshot2010 07 23魏文 confidential proprietary 2009 2 si semiconductorpnjunctionmosintroducemosdevice特性 mos2ndordereffect advancedcharacter agenda confidential proprietary 2009 3 元素周期表 p型掺杂 n型掺杂 substrate衬底 confidential proprietary 2009 4 14 n 1 n 2 n 3 孤立硅原子 2个电子 8个电子 4个电子 s层有2个量子态 p层有6个量子态 1s22s22p63s23p2 confidential proprietary 2009 5 硅原子组成晶体 confidential proprietary 2009 6 n型 p型掺杂及其能带示意图 n型掺杂 p型掺杂 confidential proprietary 2009 7 pnjunction depletionlayerformation 1 definition nofreecarrier2 wd na nd3 bais forwarddecreasewd confidential proprietary 2009 8 theconductivityofpnjunction r thecurrentisformedbythemovementofthemajoritycarriers twotypesofmovements majoritycarriers diffusemovement 扩散运动 minoritycarriers driftmovement 漂移运动 n型掺杂 p型掺杂 confidential proprietary 2009 9 theconductivityofpnjunction 正偏 导通电压 反偏击穿电压 反偏 reversebreakdown反向击穿 pnjunctioncharacteristiccurve 伏安特性曲线 themostimportantcharacteristicofpnjunctionisthatitallowscurrentinonlyonedirection pn结的最重要特性是它的单向导电性 confidential proprietary 2009 10 what smos metal oxide semi confidential proprietary 2009 11 mosskeleton whycalledsource drain canyoufigureoutwhichsideissource draininpreviousslice alwaysremember mosisfourterminal includingbulk confidential proprietary 2009 12 nmostransistor channelformation nochannel ids 0 channelform idsflowfromdtos idsincreasewithvds similartolinearresistor channelpinchoff idsindependentofvdsandsimilartocurrentsource confidential proprietary 2009 13 asvdsisincreased asvgs vds vt thedrainend pinch off atthismoment vds vds sat saturationvoltage vgs vtifvds vds sat operationin saturationregion ifvds vds sat operationin trioderegion nmoshowtowork backup confidential proprietary 2009 14 transfer output inthelinearregionthemosfetbehavesasaresistorcontrolledbyvg insaturation itbehavesasacurrentgeneratorcontrolledbyvg ifvgsis vdsat vgs thebehaviorislinearwithslope confidential proprietary 2009 15 wattestkeystructureandtestmethod vt testcondition vti n18 vd 0 05v vs vb 0v vg 0vto0 8 1 8vmeasurevti n18 vg id 0 1 a w l testresult vg 0 445v vti naa18 10 d18 confidential proprietary 2009 16 sce shortchanneleffect what shortchanneleffect vtdecreasealongwithchannellength why s dlateraldiffuse 0 7xj anddepletionextensionintochannelcauseleffreduce how tox nb xj vsb confidential proprietary 2009 17 pt punchthrough confidential proprietary 2009 18 junctionbreakdown confidential proprietary 2009 19 bodyeffect what vtincreasewithvsouce vbulkwhy vsbincreasethes ddepletionlayer whichattractmoreelectronsandcausechannelinversionlayerelectronloss requestmoregateeffect how tox nb confidential proprietary 2009 20 what gateinduceddrainleakage bigleakagecurrentindrainsideespecialwhenvgd 0 why gatetodrainoverlayareageneratehighfield leadtoavalanchemultiplicationandbtbt how vg na vd gidl confidential proprietary 2009 21 leakag