仙童PN系列三极管

Index of /ds/PN/ Name Last modified Size Description Parent Directory PN100.pdf 22-Dec-99 00:14 44K PN100A.pdf 22-Dec-99 00:14 44K PN200.pdf 22-Dec-99 00:14 51K PN2000.pdf 25-Feb-98 00:00 51K PN2000A.pdf 28-Jul-98 00:00 51K PN200A.pdf 22-Dec-99 00:14 51K PN2222A.pdf 22-Dec-99 00:14 160K PN2369A.pdf 22-Dec-99 00:14 198K PN2484.pdf 22-Dec-99 00:14 39K PN2907.pdf 22-Dec-99 00:14 42K PN2907A.pdf 22-Dec-99 00:14 58K PN3563.pdf 22-Dec-99 00:14 77K PN3565.pdf 22-Dec-99 00:14 22K PN3568.pdf 22-Dec-99 00:14 23K PN3638.pdf 22-Dec-99 00:14 26K PN3638A.pdf 22-Dec-99 00:14 26K PN3640.pdf 22-Dec-99 00:14 97K PN3642.pdf 22-Dec-99 00:14 23K PN3643.pdf 22-Dec-99 00:14 23K PN3644.pdf 22-Dec-99 00:14 25K PN3645.pdf 22-Dec-99 00:14 25K PN4117.pdf 22-Dec-99 00:14 535K PN4118.pdf 22-Dec-99 00:14 535K PN4119.pdf 22-Dec-99 00:14 535K PN4122.pdf 22-Dec-99 00:14 28K PN4141.pdf 22-Dec-99 00:14 25K PN4143.pdf 22-Dec-99 00:14 25K PN4249.pdf 22-Dec-99 00:14 24K PN4250.pdf 22-Dec-99 00:14 24K PN4250A.pdf 22-Dec-99 00:14 24K PN4258.pdf 22-Dec-99 00:14 196K PN4275.pdf 22-Dec-99 00:14 26K PN4355.pdf 22-Dec-99 00:14 41K PN4356.pdf 22-Dec-99 00:14 25K PN4391.pdf 22-Dec-99 00:14 42K PN4392.pdf 22-Dec-99 00:14 42K PN4393.pdf 22-Dec-99 00:14 42K PN4917.pdf 22-Dec-99 00:14 26K PN5134.pdf 22-Dec-99 00:14 25K PN5138.pdf 22-Dec-99 00:14 23K PN5179.pdf 22-Dec-99 00:14 51K PN918.pdf 22-Dec-99 00:14 148K PN930.pdf 22-Dec-99 00:14 25K PN100 / MMBT100 / PN100A / MMBT100ASymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 75 VVEBOEmitter-Base Voltage 6.0 VIC Collector Current - Continuous 500 mATJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 CMMBT100MMBT100APN100PN100ANPN General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 10.Absolute Maximum Ratings* TA=25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Discrete POWER & SignalTechnologiesThermal Characteristics TA= 25C unless otherwise noted*Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06.Symbol Characteristic Max UnitsPN100A *MMBT100APD Total Device DissipationDerate above 25C6255.03502.8mWmW/CRJC Thermal Resistance, Junction to Case 83.3 C/WRJA Thermal Resistance, Junction to Ambient 200 357 C/WCBETO-92CBESOT-23Mark: NA / NA1 1997 Fairchild Semiconductor CorporationPN100 / MMBT100 / PN100A / MMBT100ANPN General Purpose Amplifier(continued)Electrical Characteristics TA= 25C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsON CHARACTERISTICSSMALL SIGNAL CHARACTERISTICS*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%BVCBOCollector-Base Breakdown Voltage IC = 10 A, IB = 0 75 VBVCEOCollector-Emitter Breakdown Voltage* IC = 1 mA, IE = 0 45 VBVEBOEmitter-Base Breakdown Voltage IE = 10 A, IC = 0 6.0 VICBOCollector Cutoff Current VCB = 60 V 50 nAICESCollector Cutoff Current VCE = 40 V 50 nAIEBOEmitter Cutoff Current VEB = 4 V 50 nAhFEDC Current Gain IC = 100 A, VCE = 1.0 V 100100AIC = 10 mA, VCE = 1.0 V 100100AIC = 100 mA, VCE = 1.0 V*IC = 150 mA, VCE = 5.0 V* 100100A80240100300100100100450600350VCE(sat)Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 200 mA, IB = 20 mA*0.20.4VVVBE(sat)Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 200 mA, IB = 20 mA*0.851.0VVfTCurrent Gain - Bandwidth Product VCE = 20 V, IC = 20 mA 250 MHzCoboOutput Capacitance VCB = 5.0 V, f = 1.0 MHz 4.5 pFNF Noise Figure IC = 100 A, VCE = 5.0 V, 100RG = 2.0 k, f = 1.0 kHz 100A5.04.0dBdBTypical CharacteristicsTypical Pulsed Current Gainvs Collector Current10 20 30 50 100 200 300 5000100200300400I - COLLECTOR CURRENT (mA)h - TYPICAL PULSED CURRENT GAINCFE125 C25 C- 40 CVce = 5VCollector-Emitter SaturationVoltage vs Collector Current1 10 100 4000.4I - COLLECTOR CURRENT (mA)V - COLLECTOR-EMITTER VOLTAGE (V)CCESAT 25 C - 40 C125 C = 10PN100 / MMBT100 / PN100A / MMBT100ATypical Characteristics (continued)NPN General Purpose Amplifier(continued)Base-Emitter SaturationVoltage vs Collector Current0.1 1 10 100 3000.81I - COLLECTOR CURRENT (mA)V - COLLECTOR-EMITTER VOLTAGE (V) = 10CBESAT 25 C - 40 C125 CBase-Emitter ON Voltage vsCollector Current1 10 100 5000.81I - COLLECTOR CURRENT (mA)V - BASE-EMITTER ON VOLTAGE (V)CBEONV = 5VCE 25 C - 40 C125 CCollector-Cutoff Currentvs Ambient Temperature25 50 75 100 125 1500.1110T - AMBIENT TEMPERATURE ( C)I - COLLECTOR CURRENT (nA)ACBOV = 60VCBInput and Output Capacitancevs Reverse Voltage0.1 1 10 1000.1110100V - COLLECTOR VOLTAGE(V)CAPACITANCE (pF)CibCobf = 1.0 MHzceSwitching Times vsCollector Current10 20 30 50 100 200 3000306090120150180210240270300I - COLLECTOR CURRENT (mA)TIME (nS)IB1 = IB2 = Ic / 10V = 10 VCcctstdtf t rPower Dissipation vsAmbient Temperature0 25 50 75 100 125 1500100200300400500600700TEMPERATURE ( C)P - POWER DISSIPATION (mW)DoTO-92SOT-23PN200 / MMBT200 / PN200A / MMBT200APN200PN200AMMBT200MMBT200APNP General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 68.Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 75 VVEBO Emitter-Base Voltage 6.0 VIC Collector Current - Continuous 500 mATJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 CSymbol Characteristic Max UnitsPN200A *MMBT200APDTotal Device DissipationDerate above 25C6255.03502.8mWmW/CRJCThermal Resistance, Junction to Case 83.3 C/WRJAThermal Resistance, Junction to Ambient 200 357 C/WSOT-23Mark: N2 / N2ACBETO-92CBE*Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06.Discrete POWER & SignalTechnologies 1997 Fairchild Semiconductor CorporationPN200 / MMBT200 / PN200A / MMBT200AElectrical Characteristics TA = 25C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsON CHARACTERISTICSSMALL SIGNAL CHARACTERISTICS*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%BVCBOCollector-Base Breakdown Voltage IC = 10 A, IB = 0 60 VBVCEOCollector-Emitter Breakdown Voltage* IC = 1.0 mA, IE = 0 45 VBVEBOEmitter-Base Breakdown Voltage IE = 10 A, IC = 0 6.0 VICBOCollector Cutoff Current VCB = 50 V, IE = 0 50 nAICESCollector Cutoff Current VCE = 40 V, IE = 10 50 nAIEBOEmitter Cutoff Current VEB = 4.0 V, IC = 0 50 nAfTCurrent Gain - Bandwidth Product VCE = 20 V, IC = 20 mA 250 MHzCoboOutput Capacitance VCB = 10 V, f = 1.0 MHz 6.0 pFNF Noise Figure IC = 100 A, VCE = 5.0 V, 200RG = 2.0 k, f = 1.0 kHz 200A5.04.0dBdBhFEDC Current Gain IC = 100 A, VCE = 1.0 V 200200AIC = 10 mA, VCE = 1.0 V 200200AIC = 100 mA, VCE = 1.0 V* 200AIC = 150 mA, VCE = 5.0 V* 200200A80240100300100100100450600350VCE(sat)Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 200 mA, IB = 20 mA*0.20.4VVVBE(sat)Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 200 mA, IB = 20 mA*0.851.0VVPNP General Purpose Amplifier(continued)Typical CharacteristicsCollector-Emitter SaturationVoltage vs Collector CurrentP680.1 1 10 100 30000.00.250.3I - COLLECTOR CURRENT (mA)V - COLLECTOR EMITTER VOLTAGE (V)CCESAT25 C- 40 C125 C = 10Typical Pulsed Current Gainvs Collector Current0.01 0.1 1 10 1000100200300400500I - COLLECTOR CURRENT (mA)h - TYPICAL PULSED CURRENT GAINCFE125 C25 C- 40 CV = 5VCEPN200 / MMBT200 / PN200A / MMBT200ATypical Characteristics (continued)Base-Emitter SaturationVoltage vs Collector Current0.1 1 10 100 30000.811.2I - COLLECTOR CURRENT (mA)V - BASE EMITTER VOLTAGE (V)CBESAT = 1025 C- 40 C125 CBase Emitter ON Voltage vsCollector Current0.1 1 10 100 20000.81I - COLLECTOR CURRENT (mA)V - BASE EMITTER ON VOLTAGE (V)CBEONV = 5VCE 25 C- 40 C125 CCollector-Cutoff Currentvs. Ambient Temperature25 50 75 100 1250.010.1110100T - AMBIENT TEMPERATURE ( C)I - COLLECTOR CURRENT (nA)ACBOV = 50VCBCERCollector-Emitter BreakdownVoltage with ResistanceBetween Emitter-Base0.1 1 10 100 1000707580859095RESISTANCE (k )BV - BREAKDOWN VOLTAGE (V)PNP General Purpose Amplifier(continued)Collector Saturation Region100 300 700 2000 400001234I - BASE CURRENT (uA)V - COLLECTOR-EMITTER VOLTAGE (V)CEB50 mA 300 mA100 uATa = 25CIc =Input and Output Capacitancevs Reverse Voltage0.1 1 10 10010100V - COLLECTOR VOLTAGE(V)CAPACITANCE (pF)CibCobf = 1.0 MHzcePN200 / MMBT200 / PN200A / MMBT200APNP General Purpose Amplifier(continued)Typical Characteristics (continued)Gain Bandwidth Productvs Collector CurrentP68110250150010203040I - COLLECTOR CURRENT (mA)f - GAIN BANDWIDTH PRODUCT (MHz)CTV = 5VceSwitching Times vsCollector Current10 20 30 50 100 200 3000306090120150180210240270300I - COLLECTOR CURRENT (mA)TIME (nS)IB1 = IB2 = Ic / 10V = 10 VCcctstdtftrPower Dissipation vsAmbient Temperature0 25 50 75 100 125 1500100200300400500600700TEMPERATURE ( C)P - POWER DISSIPATION (mW)DoTO-92SOT-23 PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222ANPN General Purpose AmplifierThis device is for use as a medium power amplifier and switchrequiring collector currents up to 500 mA. Sourced from Pro-cess 19.PN2222ACBETO-92PZT2222ABCCSOT-223EMMBT2222ACBESOT-23Mark: 1PNMT2222MMPQ2222CCCCCCCCSOIC-16EBEBEBEBAbsolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Symbol Parameter Value UnitsVCEOCollector-Emitter Voltage 40 VVCBO Collector-Base Voltage 75 VVEBOEmitter-Base Voltage 6.0 VICCollector Current - Continuous 1.0 ATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CSOT-6Mark: .1BC1E1C2B1E2B2Discrete POWER & SignalTechnologies 1997 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222AElectrical Characteristics TA = 25C unless otherwise notedSymbol Parameter Test Conditions Min Max UnitsOFF CHARACTERISTICSON CHARACTERISTICSSMALL SIGNAL CHARACTERISTICS (except MMPQ2222 and NMT2222)fTCurrent Gain - Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz 300 MHzCoboOutput Capacitance VCB = 10 V, IE = 0, f = 100 kHz 8.0 pFCiboInput Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 25 pFrbCC Collector Base Time Constant IC = 20 mA, VCB = 20 V, f = 31.8 MHz 150 pSNF Noise Figure IC = 100 A, VCE = 10 V, RS = 1.0 k, f = 1.0 kHz4.0 dBRe(hie)Real Part of Common-EmitterHigh Frequency Input ImpedanceIC = 20 mA, VCE = 20 V, f = 300 MHz 60 SWITCHING CHARACTERISTICS (except MMPQ2222 and NMT2222)*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%Spice ModelV(BR)CEOCollector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 40 VV(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 75 VV(BR)EBOEmitter-Base Breakdown Voltage IE = 10 A, IC = 06.0 VICEXCollector Cutoff Current VCE = 60 V, VEB(OFF) = 3.0 V 10 nAICBO Collector Cutoff Current VCB = 60 V, IE = 0VCB = 60 V, IE = 0, TA = 150C0.0110AAIEBOEmitter Cutoff Current VEB = 3.0 V, IC = 0 10 nAIBL Base Cutoff Current VCE = 60 V, VEB(OFF) = 3.0 V 20 nAhFEDC Current Gain IC = 0.1 mA, VCE = 10 VIC = 1.0 mA, VCE = 10 VIC = 10 mA, VCE = 10 VIC = 10 mA, VCE = 10 V, TA = -55CIC = 150 mA, VCE = 10 V*IC = 150 mA, VCE = 1.0 V*IC = 500 mA, VCE = 10 V* 355075351005040300VCE(sat)Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA0.31.0VVVBE(sat)Base-Emitter Saturation Voltage* IC = 150 mA, IB = 1.0 mAIC = 500 mA, IB = 5.0 mA0.6 1.22.0VVtdDelay Time VCC = 30 V, VBE(OFF) = 0.5 V, 10 nstrRise Time IC = 150 mA, IB1 = 15 mA 25 nstsStorage Time VCC = 30 V, IC = 150 mA, 225 nstfFall Time IB1 = IB2 = 15 mA 60 nsNPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6Vtf=1.7 Xtf=3 Rb=10)NPN General Purpose Amplifier(continued) PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222AThermal Characteristics TA = 25C unless otherwise notedSymbol Characteristic Max UnitsPN2222A *PZT2222APDTotal Device DissipationDerate above 25C6255.01,0008.0mWmW/CRJCThermal Resistance, Junction to Case 83.3 C/WRJAThermal Resistance, Junction to Ambient 200 125 C/WSymbol Characteristic Max Units*MMBT2222A MMPQ2222PD Total Device DissipationDerate above 25C3502.81,0008.0mWmW/CRJAThermal Resistance, Junction to AmbientEffective 4 DieEach Die357125240C/WC/WC/WTypical CharacteristicsNPN General Purpose Amplifier(continued)*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm； mounting pad for the collector lead min. 6 cm2.*Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06.Base-Emitter ON Voltage vsCollector CurrentP190.1 1 10 0.81I - COLLECTOR CURRENT (mA)V - BASE-EMITTER ON VOLTAGE (V)BE(ON)CV = 5VCE 25 C125 C- 40 CBase-Emitter SaturationVoltage vs Collector Current 11010501I - COLLECTOR CURRENT (mA)V - BASE-EMITTER VOLTAGE (V)BESATC = 1025 C125 C- 4 0 CCollector-Emitter SaturationVoltage vs Collector Current P1911010500.4I - COLLECTOR CURRENT (mA)V - COLLECTOR-EMITTER VOLTAGE (V)CESAT25 CC = 10125 C- 40 CTypical Pulsed Current Gainvs Collector CurrentP190.1 0.3 1 3 10 30 100 3000100200300400500I - COLLECTOR CURRENT (mA)h - TYPICAL PULSED CURRENT GAINCFE125 C25 C- 40 CV = 5VCE PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222ANPN General Purpose Amplifier(continued)Typical Characteristics (continued)Collector-Cutoff Currentvs Ambient Temperature25 50 75 100 125 1500.1110100500T - AMBIENT TEMPERATURE ( C)I - COLLECTOR CURRENT (nA)AV = 40VCBCBOEmitter Transition and OutputCapacitance vs Reverse Bias VoltageP190.1 1 10 10048121620REVERSE BIAS VOLTAGE (V)CAPACITANCE (pF)f = 1 MHzCobC teTurn On and Turn Off Timesvs Collector Current10 100 1000080160240320400I - COLLECTOR CURRENT (mA)TIME (nS)I = I = tont offB1CB2Ic10V = 25 VccSwitching Timesvs Collector CurrentP1910 100 1000080160240320400I - COLLECTOR CURRENT (mA)TIME (nS)I = I = trt sB1CB2Ic10V = 25 VcctftdPower Dissipation vsAmbient Temperature0 25 50 75 100 125 150051TEMPERATURE ( C)P - POWER DISSIPATION (W)DoSOT-223TO-92SOT-23 PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222ATest Circuits30 V1.0 K16 V0 200ns 200ns500 200 50 37 - 15 V1.0 K6.0 V030 VFIGURE 2: Saturated Turn-Off Switching TimeFIGURE 1: Saturated Turn-On Switching Time1kNPN General Purpose Amplifier(continued)PN2369A / MMBT2369A / MMPQ2369PN2369A MMPQ2369MMBT2369ANPN Switching TransistorThis device is designed for high speed saturation switching at collectorcurrents of 10 mA to 100 mA. Sourced from Process 21.Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Symbol Parameter Value UnitsVCEOCollector-Emitter Voltage 15 VVCBOCollector-Base Voltage 40 VVEBO Emitter-Base Voltage 4.5 VICCollector Current - Continuous 200 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CThermal Characteristics TA = 25C unless otherwise notedSymbol Characteristic Max UnitsPN2369A MMBT2369A* MMPQ2369PDTotal Device DissipationDerate above 25C3502.82251.81,0008.0mWmW/CRJC Thermal Resistance, Junction to Case 125 C/WRJAThermal Resistance, Junction to AmbientEffective 4 DieEach Die357 556125240C/WC/WC/WCBETO-92CBESOT-23Mark: 1SCCCCCCCCSOIC-16EBEBEBEB*Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06.Discrete POWER & SignalTechnologies 1997 Fairchild Semiconductor CorporationPN2369A / MMBT2369A / MMPQ2369Electrical Characteristics TA = 25C unless otherwise notedOFF CHARACTERISTICSV(BR)CEOCollector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 15 VV(BR)CES Collector-Emitter Breakdown Voltage IC = 10 A, VBE = 0 40 VV(BR)CBOCollector-Base Breakdown Voltage IC = 10 A, IE = 0 40 VV(BR)EBOEmitter-Base Breakdown Voltage IE = 10 A, IC = 04.5 VICBO Collector Cutoff Current VCB = 20 V, IE = 0VCB = 20 V, IE = 0, TA = 125C0.430AAON CHARACTERISTICShFEDC Current Gain* IC = 10 mA, VCE = 1.0 V IC = 10 mA,VCE = 0.35 V,TA = -55CIC = 100 mA, VCE = 2.0 V402020120VCE(sat)Collector-Emitter Saturation Voltage* IC = 10 mA, IB = 1.0 mAIC = 10 mA, IB = 1.0 mA,TA = 125CIC = 30 mA, IB = 3.0 mAIC = 100 mA, IB = 10 mA50.5VVVVVBE(sat)Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 10 mA, IB = 1.0 mA,TA = -55CIC = 10 mA, IB = 1.0 mA,TA = 125CIC = 30 mA, IB = 3.0 mAIC = 100 mA, IB = 10 mA0.70.590.851.021.151.6VVVVVSymbol Parameter Test Conditions Min Max UnitsSMALL SIGNAL CHARACTERISTICSCoboOutput Capacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pFCiboInput Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 5.0 pFhfeSmall-Signal Current Gain IC = 10 mA, VCE = 10 V,RG = 2.0 k, f = 100 MHz5.0SWITCHING CHARACTERISTICS (except MMPQ2369)*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%Spice ModelNPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6pItf=.3 Vtf=4 Xtf=4 Rb=10)tsStorage Time IB1 = IB2 = IC = 10 mA 13 nstonTurn-On Time VCC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA12 nstoffTurn-Off Time VCC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA, IB2 = 1.5 mA18 nsNPN Switching Transistor(continued)PN2369A / MMBT2369A / MMPQ2369DC Typical CharacteristicsNPN Switching Transistor(continued)DC Current Gainvs Collector Current0.01 0.1 1 10 10050100150200I - COLLECTOR CURRENT (mA)h - DC CURRENT GAINFECV = 1VCE - 40 C25 C125 CCollector-Emitter SaturationVoltage vs Collector Current P210.1 1 10 100 50000.40.5I - COLLECTOR CURRENT (mA)V - COLLECTOR-EMITTER VOLTAGE (V)CESAT- 40 C25 CC = 10125 CBase-Emitter SaturationVoltage vs Collector Current P210.1 1 10 100 30011.21.4I - COLLECTOR CURRENT (mA)V - BASE-EMITTER VOLTAGE (V)BESATC = 10- 40 C25 C125 CBase-Emitter ON Voltage vsCollector CurrentP210.1 1 10 1000.81I - COLLECTOR CURRENT (mA)V - BASE-EMITTER ON VOLTAGE (V)BE(ON)CV = 1VCE - 40 C25 C125 CCollector-Cutoff Currentvs Ambient Temperature25 50 75 100 125 150110100600T - AMBIENT TEMPERATURE ( C)I - COLLECTOR CURRENT (nA)AV = 20VCBCBOPN2369A / MMBT2369A / MMPQ2369AC Typical CharacteristicsOutput Capacitances vs. Reverse Bias VoltageSwitching Times vs. Collector CurrentStorage Time vs. Turn On and Turn Off Base CurrentsSwitching Times vs. Ambient TemperatureStorage Time vs. Turn On and Turn Off Base CurrentsStorage Time vs. Turn On and Turn Off Base CurrentsNPN Switching Transistor(continued)PN2369A / MMBT2369A / MMPQ2369AC Typical Characteristics (continued)NPN Switching Transistor(continued)Fall Time vs. Turn On and Turn Off Base CurrentsFall Time vs. Turn On and Turn Off Base CurrentsFall Time vs. Turn On and Turn Off Base CurrentsDelay Time vs. Base-Emitter OFFVoltage and Turn On Base CurrentRise Time vs. Turn On BaseCurrent and Collector CurrentPN2369A / MMBT2369A / MMPQ2369AC Typical Characteristics (continued)Test Circuits0- 10VINVIN0.1 FA500 890 0.1 F1 K+6VVOUT0- 4V10%VOUTtstoff10%90%VOUTVIN0VOUT10% Pulse waveformat point AtoffVBB = 12 VVIN = - 20.9 VVINVOUT10%90%VIN0ton tonVBB = - 3.0 VVIN = + 15.25 VTo sampling oscilloscopeinput impedance = 50Rise Time 1 nsPulse generatorVIN Rise Time 1 nsSource Impedance = 50PW 300 nsDuty Cycle 2%0.0023F 0.0023F0.0023F 0.0023F10 F 10 F+11 V 10 V500 91 0.05 F 0.05 F0.1 F 0.1 F3.3 K50 3.3 K220 50 VCC = 3.0 VVBBPulse generatorVIN Rise Time 1 nsSource Impedance = 50PW 300 nsDuty Cycle 2%56 FIGURE 1: Charge Storage Time Measurement CircuitFIGURE 2: tON, tOFF Measurement CircuitPOWER DISSIPATION vsAMBIENT TEMPERATURE0 25 50 75 100 125 150051TEMPERATURE ( C)P - POWER DISSIPATION (W)DoSOT-223SOT-23TO-92NPN Switching Transistor(continued)PN2484 / MMBT2484PN2484 MMBT2484NPN General Purpose AmplifierThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1 to 50 mA.Sourced from Process 07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VVCBOCollector-Base Voltage 60 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 100 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CSymbol Characteristic Max UnitsPN2484 *MMBT2484PDTotal Device DissipationDerate above 25C6255.03502.8mWmW/CRJC Thermal Resistance, Junction to Case 83.3 C/WRJAThermal Resistance, Junction to Ambient 200 357 C/W*Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06.CBETO-92SOT-23Mark: 1UCBEDiscrete POWER & SignalTechnologies 1997 Fairchild Semiconductor CorporationPN2484 / MMBT2484Electrical Characteristics TA = 25C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsON CHARACTERISTICSSMALL SIGNAL CHARACTERISTICS*Pulse Test: Pulse Width 300 s, Duty Cycle 3.0%BVCBOCollector-Base Breakdown VoltageIC = 10 A, IB = 060 VBVCEO Collector-Emitter BreakdownVoltage*IC = 10 mA, IE = 0 60 VBVEBO Emitter-Base Breakdown Voltage IC = 10 A, IE = 0 5.0 VICBO Collector Cutoff Current VCB = 45 V, IE = 0VCB = 45 V, IE = 0, TA = 150C1010nAAIEBOEmitter Cutoff Current VEB = 5.0 V, IC = 0 10 nACoboOutput Capacitance VCB =5.0 V, f = 140 kHz 6.0 pFCiboInput Capacitance VEB = 0.5 V, f = 140 kHz 6.0 pFNF Noise Figure IC = 10 A, VCE = 5.0 V,RS = 10k,f = 1.0 kHz,BW =200 Hz3.0 dBhFEDC Current Gain IC = 1.0 mA, VCE = 5.0 VIC = 10 mA, VCE = 5.0 V*250800VCE(sat)Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA 0.35 VVBE(on)Base-Emitter On Voltage IC = 1.0 mA, VCE = 5.0 V 0.95 VNPN General Purpose Amplifier(continued)PN2907 / MMBT2907Discrete POWER & SignalTechnologiesPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEOCollector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 800 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CSymbol Characteristic Max UnitsPN2907 *MMBT2907PDTotal Device DissipationDerate above 25C6255.03502.8mWmW/CRJCThermal Resistance, Junction to Case 83.3 C/WRJAThermal Resistance, Junction to Ambient 200 357 C/WCBESOT-23Mark: 2BMMBT2907PN2907CBETO-92*Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06. 1997 Fairchild Semiconductor CorporationPN2907 / MMBT2907PNP General Purpose Amplifier(continued)Electrical Characteristics TA = 25C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsV(BR)CEOCollector-Emitter Breakdown Voltage* IC = 10 mA, IB = 040V(BR)CBOCollector-Base Breakdown Voltage IC = 10 A, IE = 0 60 VV(BR)EBOEmitter-Base Breakdown Voltage IE = 10 A, IC = 05.0 VICEX Collector Cutoff Current VCE = 30 V 50 nAIBBase Cutoff Current VBE = 0.5 V 50 nAICBO Collector Cutoff Current VCB = 50 V, IE = 0VCB = 50 V, IE = 0, TA = 150 C2020nAAON CHARACTERISTICS*hFEDC Current Gain VCE = 10 V, IC = 0.1 mAVCE = 10 V, IC = 1.0 mAVCE = 10 V, IC = 10 mAVCE = 10 V, IC = 150 mAVCE = 10 V, IC = 500 mA35507510030300VCE(sat)Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mAIC = 500 mA, IB = 50 mA0.41.6VVVBE(sat)Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mAIC = 500 mA, IB = 50 mA1.32.6VVSMALL SIGNAL CHARACTERISTICSCobOutput Capacitance VCB = 10 V, f = 1.0 MHz 8.0 pFCibInput Capacitance VEB = 2.0 V, f = 1.0 MHz 30 pFhfeSmall-Signal Current Gain IC = 50 mA, VCE = 20 V,f = 100 MHz2.0SWITCHING CHARACTERISTICS*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%tonTurn-on Time VCC = 30 V, IC = 150 mA, 45 nstdDelay Time IB1 = 15 mA , PW = 200 ns 10 nstrRise Time 40 nstoffTurn-off Time VCC = 6.0 V, IC = 150 mA 100 nstsStorage Time IB1 = IB2 = 15 mA 80 nstfFall Time 30 nsPN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907ASymbol Parameter Value UnitsVCEOCollector-Emitter Voltage 60 VVCBOCollector-Base Voltage 60 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 800 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CPNP General Purpose AmplifierThis device is designed for use as a general purpose amplifierand switch requiring collector currents to 500 mA. Sourcedfrom Process 63.Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.PZT2907ABCCSOT-223EPN2907ACBETO-92MMBT2907ACBESOT-23Mark: 2FMMPQ2907CCCCCCCCSOIC-16EBEBEBEBNMT2907SOT-6Mark: .2BC1E1C2B1E2B2Discrete POWER & SignalTechnologies 1997 Fairchild Semiconductor CorporationPN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907AElectrical Characteristics TA = 25C unless otherwise notedOFF CHARACTERISTICSON CHARACTERISTICSSMALL SIGNAL CHARACTERISTICS (except MMPQ2907 and NMT2907)fTCurrent Gain - Bandwidth Product IC = 50 mA, VCE = 20 V,f = 100 MHz200 MHzCoboOutput Capacitance VCB = 10 V, IE = 0,f = 100 kHz8.0 pFCiboInput Capacitance VEB = 2.0 V, IC = 0,f = 100 kHz30 pFSWITCHING CHARACTERISTICS (except MMPQ2907 and NMT2907)tonTurn-on Time VCC = 30 V, IC = 150 mA, 45 nstdDelay Time IB1 = 15 mA 10 nstrRise Time 40 nstoffTurn-off Time VCC = 6.0 V, IC = 150 mA 100 nstsStorage Time IB1 = IB2 = 15 mA 80 nstfFall Time 30 ns*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%Spice ModelSymbol Parameter Test Conditions Min Max UnitsV(BR)CEOCollector-Emitter Breakdown Voltage* IC = 10 mA, IB = 060VV(BR)CBOCollector-Base Breakdown Voltage IC = 10 A, IE = 0 60 VV(BR)EBOEmitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 VIBBase Cutoff Current VCB = 30 V, VEB = 0.5 V 50 nAICEXCollector Cutoff Current VCE = 30 V, VBE = 0.5 V 50 nAICBOCollector Cutoff Current VCB = 50 V, IE = 0VCB = 50 V, IE = 0, TA = 150C0.0220AAhFEDC Current Gain IC = 0.1 mA, VCE = 10 VIC = 1.0 mA, VCE = 10 VIC = 10 mA, VCE = 10 VIC = 150 mA, VCE = 10 V*IC = 500 mA, VCE = 10 V*7510010010050300VCE(sat)Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mAIC = 500 mA, IB = 50 mA0.41.6VVVBE(sat)Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*IC = 500 mA, IB = 50 mA1.32.6VVPNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7pItf=.65 Vtf=5 Xtf=1.7 Rb=10)PNP General Purpose Amplifier(continued)PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907AThermal Characteristics TA = 25C unless otherwise notedSymbol Characteristic Max UnitsPN2907A *PZT2907APDTotal Device DissipationDerate above 25C6255.01,0008.0mWmW/CRJCThermal Resistance, Junction to Case 83.3 C/WRJAThermal Resistance, Junction to Ambient 200 125 C/WSymbol Characteristic Max Units*MMBT2907A MMPQ2907PDTotal Device DissipationDerate above 25C3502.81,0008.0mWmW/CRJAThermal Resistance, Junction to AmbientEffective 4 DieEach Die357125240C/WC/WC/WPNP General Purpose Amplifier(continued)Typical Characteristics*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm； mounting pad for the collector lead min. 6 cm2.*Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06.Typical Pulsed Current Gainvs Collector Current0.1 0.3 1 3 10 30 100 3000100200300400500I - COLLECTOR CURRENT (mA)h - TYPICAL PULSED CURRENT GAINCFE125 C25 C- 40 CV = 5VCECollector-Emitter SaturationVoltage vs Collector Current1 10 100 50000.40.5I - COLLECTOR CURRENT (mA)V - COLLECTOR EMITTER VOLTAGE (V)CCESAT = 1025 C- 40 C125 CPN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907APNP General Purpose Amplifier(continued)Typical Characteristics (continued)Base-Emitter SaturationVoltage vs Collector Current1 10 100 50000.81I - COLLECTOR CURRENT (mA)V - BASE EMITTER VOLTAGE (V)CBESAT25 C- 40 C125 C = 10Base Emitter ON Voltage vsCollector Current0.1 1 10 2500.81I - COLLECTOR CURRENT (mA)V - BASE EMITTER ON VOLTAGE (V)CBEONV = 5VCE 25 C- 40 C125 CCollector-Cutoff Currentvs. Ambient Temperature25 50 75 100 1250.010.1110100T - AMBIENT TEMPERATURE ( C)I - COLLECTOR CURRENT (nA)ACBOV = 35VCBInput and Output Capacitancevs Reverse Bias Voltage0.1 1 10 50048121620REVERSE BIAS VOLTAGE (V)CAPACITANCE (pF)CobC ibSwitching Timesvs Collector Current10 100 1000050100150200250I - COLLECTOR CURRENT (mA)TIME (nS)I = I = trt sB1CB2Ic10V = 15 VcctftdTurn On and Turn Off Timesvs Collector Current10 100 10000100200300400500I - COLLECTOR CURRENT (mA)TIME (nS)I = I = tont offB1CB2Ic10V = 15 VccPN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907APNP General Purpose Amplifier(continued)Typical Characteristics (continued)Rise Time vs Collectorand Turn On Base Currents10 100 500125102050I - COLLECTOR CURRENT (mA)I - TURN 0N BASE CURRENT (mA)30 ns Ct = 15 VrB160 ns Power Dissipation vsAmbient Temperature0 25 50 75 100 125 150051TEMPERATURE ( C)P - POWER DISSIPATION (W)DoSOT-223TO-92SOT-23Test CircuitsFIGURE 1: Saturated Turn-On Switching Time Test CircuitFIGURE 2: Saturated Turn-Off Switching Time Test Circuit1.0 KW- 6.0 V15 V1.0 KW- 30 V0 200ns 200ns- 16 V050 W200 W1 KW37 W50 W30 VTRADEMARKSACExCoolFETCROSSVOLTE2CMOSTMFACTFACT Quiet SeriesFASTFASTrGTOHiSeCThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:ISOPLANARMICROWIREPOPPowerTrenchQSQuiet SeriesSuperSOT-3SuperSOT-6SuperSOT-8TinyLogic1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative orIn DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN； NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.NPN RF AmplifierPN3563Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25C unless otherwise notedThis device is designed for use as RF amplifiers, oscillators andmultipliers with collector currents in the 1.0 mA to 30 mA range.Sourced from Process 43. See PN918 for characteristics.Symbol Parameter Value UnitsVCEOCollector-Emitter Voltage 15 VVCBO Collector-Base Voltage 30 VVEBOEmitter-Base Voltage 2.0 VICCollector Current - Continuous 50 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CSymbol Characteristic Max UnitsPN3563PDTotal Device DissipationDerate above 25C3502.8mWmW/CRJCThermal Resistance, Junction to Case 125 C/WRJA Thermal Resistance, Junction to Ambient 357 C/WCBETO-92PN3563Discrete POWER & SignalTechnologies 1997 Fairchild Semiconductor CorporationPN3563NPN RF Amplifier(continued)Electrical Characteristics TA= 25C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsVCEO(sus)Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0 15 VV(BR)CBO Collector-Base Breakdown Voltage IC = 100 A, IE = 0 30 VV(BR)EBOEmitter-Base Breakdown Voltage IE = 10 A, IC = 02.0 VICBO Collector Cutoff Current VCB = 15 V, IE = 0VCB = 15 V, TA = 150C0.055.0AnAON CHARACTERISTICS*hFEDC Current Gain IC = 8.0 mA, VCE = 10 V 20 200SMALL SIGNAL CHARACTERISTICSfTCurrent Gain - Bandwidth Product IC = 8.0 mA, VCE = 10 V,f = 100 MHz600 1500 MHzCoboOutput Capacitance VCB = 10 V, IE = 0, f = 1.0 MHzVCB = 0, IE = 0, f = 1.0 MHz1.73.0pFpFCiboInput Capacitance VBE = 0.5 V, IC = 0, f = 140 MHz 2.0 pFhfeSmall-Signal Current Gain IC = 8.0 mA, VCE = 10 V,f = 1.0 kHz20 250rbCC Collector Base Time Constant IC = 8.0 mA, VCE = 10 V,f = 79.8 MHz8.0 25 pSFUNCTIONAL TESTGpeAmplifier Power Gain IC = 8.0 mA, VCB = 10 V,f = 200 MHz14 26 dB*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%PN3565Discrete POWER & SignalTechnologiesNPN General Purpose AmplifierPN3565This device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourced fromProcess 10. See PN100 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEOCollector-Emitter Voltage 25 VVCBO Collector-Base Voltage 30 VVEBOEmitter-Base Voltage 6.0 VICCollector Current - Continuous 500 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CSymbol Characteristic Max UnitsPN3565PDTotal Device DissipationDerate above 25C6255.0mWmW/CRJCThermal Resistance, Junction to Case 83.3 C/WRJAThermal Resistance, Junction to Ambient 200 C/WCBETO-92 1997 Fairchild Semiconductor CorporationPN3565NPN General Purpose Amplifier(continued)Electrical Characteristics TA = 25C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsV(BR)CEOCollector-Emitter Breakdown Voltage* IC = 2.0 mA, IB = 0 25 VV(BR)CBOCollector-Base Breakdown Voltage IC = 100 A, IE = 0 30 VV(BR)EBOEmitter-Base Breakdown Voltage IE = 10 A, IC = 06.0 VICBO Collector Cutoff Current VCB = 25 V, IE = 0 50 nAON CHARACTERISTICS*hFEDC Current Gain VCE = 10 V, IC = 1.0 mA 150 600VCE(sat)Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA 0.35 VSMALL SIGNAL CHARACTERISTICSCobOutput Capacitance VCB = 5.0 V 4.0 pFhieInput Impedance IC = 1.0 mA, VCE = 5.0 V,f = 1.0 kHz2.0 20 khoeOutput Admittance IC = 1.0 mA, VCE = 5.0 V,f = 1.0 kHz0.5 35 mhoshfeSmall-Signal Current Gain IC = 1.0 mA, VCE = 5.0 V,f = 20 MHzIC = 1.0 mA, VCE = 5.0 V,f = 1.0 kHz2.012012750*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%PN3568Discrete POWER & SignalTechnologiesNPN General Purpose AmplifierPN3568This device is designed for general purpose, medium poweramplifiers and switches requiring collector currents to 500 mA.Sourced from Process 12. SeeTN3019A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEOCollector-Emitter Voltage 60 VVCBO Collector-Base Voltage 80 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 1.0 ATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CSymbol Characteristic Max UnitsPN3568PDTotal Device DissipationDerate above 25C6255.0mWmW/CRJCThermal Resistance, Junction to Case 83.3 C/WRJAThermal Resistance, Junction to Ambient 200 C/WCBETO-92 1997 Fairchild Semiconductor CorporationPN3568NPN General Purpose Amplifier(continued)Electrical Characteristics TA = 25C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsV(BR)CEOCollector-Emitter Breakdown Voltage* IC = 30 mA, IB = 060V(BR)CBO Collector-Base Breakdown Voltage IC = 100 A, IE = 0 80 VV(BR)EBOEmitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 VICBOCollector Cutoff Current VCB = 40 V, IE = 0VCB = 40 V, IE = 0, TA = 75 C505.0nAAIEBOEmitter Cutoff Current VEB = 4.0 V, IC = 0 25 nAON CHARACTERISTICS*hFEDC Current Gain VCE = 1.0 V, IC = 30 mAVCE = 1.0 V, IC = 150 mA4040 120VCE(sat)Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 0.25 VVBE(on)Base-Emitter On Voltage VCE = 1.0 V, IC = 150 mA 1.1 VSMALL SIGNAL CHARACTERISTICSCobOutput Capacitance VCB = 10 V, f = 1.0 MHz 20 pFCibInput Capacitance VEB = 0.5 V, f = 1.0 MHz 80 pFhfeSmall-Signal Current Gain IC = 50 mA, VCE = 10 V,f = 20 MHz3.0 30*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%PN3638 / PN3638ADiscrete POWER & SignalTechnologiesPNP General Purpose AmplifierPN3638PN3638AThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Voltage 25 VVEBO Emitter-Base Voltage 4.9 VIC Collector Current - Continuous 800 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CSymbol Characteristic Max UnitsPN3638/APDTotal Device DissipationDerate above 25C6255.0mWmW/CRJC Thermal Resistance, Junction to Case 83.3 C/WRJAThermal Resistance, Junction to Ambient 200 C/WCBETO-92 1997 Fairchild Semiconductor CorporationPN3638 / PN3638APNP General Purpose Amplifier(continued)Electrical Characteristics TA = 25C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsV(BR)CEOCollector-Emitter BreakdownVoltage*IC = 10 mA, IB = 0 25 VV(BR)CES Collector-Emitter BreakdownVoltage*IC = 100 A, IB = 0 25 VV(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 25 VV(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 04.0 VICES Collector-Cutoff Current VCE = 15 V, IE = 0VCE = 15 V, IE = 0, TA = 65C352.0nAAON CHARACTERISTICS*hFEDC Current Gain VCE = 1.0 V, IC = 50 mAPN3638PN3638AVCE = 2.0 V, IC = 300 mAPN3638PN3638AVCE = 10 V, IC = 100 mAPN3638PN3638AVCE = 10 V, IC = 1.0 mAPN3638A3010030202080100VCE(sat)Collector-Emitter Saturation Voltage IC = 50 mA, IB = 2.5 mAIC = 300 mA, IB = 30 mA0.251.0VVVBE(sat)Base-Emitter Saturation Voltage IC = 50 mA, IB = 2.5 mAIC = 300 mA, IB = 30 mA VVSMALL SIGNAL CHARACTERISTICSCobOutput Capacitance VCB = 10 V, f = 1.0 MHz PN3638PN3638A2010pFpFCib Input Capacitance VBE = 0.5 V, f = 1.0 MHzPN3638PN3638A6525pFpFhfeSmall-Signal Current Gain IC = 50 mA, VCE = 3.0 V,f = 100 MHz PN3638PN3638AIC = 10 mA, VCE = 10 V,f = 1.0 kHz PN3638PN3638A1.01.525100hieInput Impedance IC = 10 mA, VCE = 10 V, 2.0 khoeOutput Admittance f = 1.0 kHz 1.2 mhoshreVoltage Feedback Ratio PN3638PN3638A2615x10-4x10-4SWITCHING CHARACTERISTICS*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%tonTurn-on Time VCC = 10 V, IC = 300 mA, 75 nstdDelay Time IB1 = 30 mA 20 nstrRise Time 70 nstoffTurn-off Time VCC = 10 V, IC = 300 mA 170 nstsStorage Time IB1 = IB2 = 30 mA 140 nstfFall Time 70 nsPN3640 MMBT3640PNP Switching TransistorThis device is designed for very high speed saturate switching atcollector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25C unless otherwise notedSymbol Characteristic Max UnitsPN3640 *MMBT3640PD Total Device DissipationDerate above 25C3502.82251.8mWmW/CRJC Thermal Resistance, Junction to Case 125 C/WRJAThermal Resistance, Junction to Ambient 357 556 C/WSymbol Parameter Value UnitsVCEOCollector-Emitter Voltage 12 VVCBO Collector-Base Voltage 12 VVEBOEmitter-Base Voltage 4.0 VICCollector Current - Continuous 200 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CCBETO-92CBESOT-23Mark: 2J*Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06.PN3640 / MMBT3640Discrete POWER & SignalTechnologies 1997 Fairchild Semiconductor CorporationPN3640 / MMBT3640PNP Switching Transistor(continued)Electrical Characteristics TA = 25C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsV(BR)CEOCollector-Emitter Breakdown Voltage* IC = 10 mA, IB = 012V(BR)CES Collector-Emitter Breakdown Voltage IC = 100 A, VBE = 0 12 VV(BR)CBOCollector-Base Breakdown Voltage IC = 100 A, IE = 012 VV(BR)EBO Emitter-Base Breakdown Voltage IE = 100 A, IC = 0 4.0 VICESCollector Cutoff Current VCE = 6.0 V, VBE = 0VCE = 6.0 V, VBE = 0, TA = 65C0.011.0AAIB Base Current VCE = 6.0 V, VBE = 0 10 nAON CHARACTERISTICS*hFEDC Current Gain IC = 10 mA, VCE = 0.3 VIC = 50 mA, VCE = 1.0 V3020120VCE(sat)Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mAIC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mAIC= 10 mA, IB= 1.0 mA,TA =65C0.25VVVVVBE(sat)Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mAIC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA0.750.80.951.01.5VVVSMALL SIGNAL CHARACTERISTICSfTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,f = 100 MHz500 MHzCoboOutput Capacitance VCB = 5.0 V, IE = 0,f = 1.0 MHz3.5 pFCiboInput Capacitance VBE = 0.5 V, IC = 0,f = 1.0 MHz3.5 pFSWITCHING CHARACTERISTICStdDelay TimeVCC = 6.0 V, VBE(off) = 1.9 V,10 nstrRise Time IC = 50 mA, IB1 = 5.0 mA 20 nstsStorage Time VCC = 6.0 V, IC = 50 mA, 20 nstfFall Time IB1 = IB2 = 5.0 mA 12 nstonTurn-On TimeVCC = 6.0 V, VBE(off) = 1.9 V,25 nsIC = 50 mA, IB1 = 5.0 mAVCC = 1.5 V, IC = 10 mA, 60 nsIB1 = IB2 = 0.5 mAtoffTurn-Off TimeVCC = 6.0 V, VBE(off) = 1.9 V,35 nsIC = 50 mA, IB1 = 5.0 mAVCC = 1.5 V, IC = 10 mA, 75 nsIB1 = IB2 = 0.5 mA*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%PN3642Discrete POWER & SignalTechnologiesNPN General Purpose AmplifierPN3642This device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourced fromProcess 10. See PN100 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEOCollector-Emitter Voltage 45 VVCBO Collector-Base Voltage 60 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 500 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CSymbol Characteristic Max UnitsPN3642PD Total Device DissipationDerate above 25C6255.0mWmW/CRJCThermal Resistance, Junction to Case 83.3 C/WRJA Thermal Resistance, Junction to Ambient 200 C/WCBETO-92 1997 Fairchild Semiconductor CorporationPN3642NPN General Purpose Amplifier(continued)Electrical Characteristics TA = 25C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsV(BR)CEOCollector-Emitter Breakdown Voltage* IC = 10 mA, IB = 045V(BR)CBOCollector-Base Breakdown Voltage IC = 10 A, IE = 0 60 VV(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 VICESCollector Cutoff Current VCE = 50 V, IE = 0,VCE = 50 V, IE = 0, TA = 65 C501.0nAAON CHARACTERISTICS*hFEDC Current Gain VCE = 10 V, IC = 150 mAVCE = 10 V, IC = 500 mA4015120VCE(sat)Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 0.22 VSMALL SIGNAL CHARACTERISTICSCobOutput Capacitance VCB = 10 V, f = 140 kHz 8.0 pFhfeSmall-Signal Current Gain IC = 50 mA, VCE = 5.0 V,f = 100 MHz1.5GpeAmplifier Power Gain VCE = 15 V, IC = 0,Rg = 140 , f = 30 MHz,RL = 260 10 dB Collector Efficiency VCE = 15 V, IC = 0,RS = 140 , f = 30 MHz,RL = 260 60 %*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%PN3643Discrete POWER & SignalTechnologiesNPN General Purpose AmplifierPN3643This device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEOCollector-Emitter Voltage 30 VVCBO Collector-Base Voltage 60 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 500 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CSymbol Characteristic Max UnitsPN3643PD Total Device DissipationDerate above 25C6255.0mWmW/CRJCThermal Resistance, Junction to Case 83.3 C/WRJA Thermal Resistance, Junction to Ambient 200 C/WCBETO-92 1997 Fairchild Semiconductor CorporationPN3643NPN General Purpose Amplifier(continued)Electrical Characteristics TA = 25C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsV(BR)CEOCollector-Emitter Breakdown Voltage* IC = 10 mA, IB = 030V(BR)CBOCollector-Base Breakdown Voltage IC = 10 A, IE = 0 60 VV(BR)EBOEmitter-Base Breakdown Voltage IE = 10 A, IC = 05.0 VICES Collector Cutoff Current VCE = 50 V, IE = 0VCE = 50 V, IE = 0, TA = +65 C501.0nAAON CHARACTERISTICS*hFEDC Current Gain VCE = 10 V, IC = 150 mAVCE = 10 V, IC = 500 mA10020300VCE(sat)Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 0.22 VSMALL SIGNAL CHARACTERISTICSCobOutput Capacitance VCB = 10 V, f = 140 kHz, 8.0 pF Collector Efficiency VCE = 15 V, f = 30 MHz, Rg = 140 , RL = 260 60 %GpeAmplifier Power Gain VCE = 15 V, f = 30 MHz, Rg = 140 , RL = 260 10 dBhfeSmall-Signal Current Gain IC = 50 mA, VCE = 5.0 V,f = 100 MHz2.5*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%PN3644Discrete POWER & SignalTechnologiesPNP General Purpose AmplifierPN3644This device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 45 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 800 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150 CSymbol Characteristic Max UnitsPN3644PDTotal Device DissipationDerate above 25C6255.0mWmW/CRJC Thermal Resistance, Junction to Case 83.3 C/WRJAThermal Resistance, Junction to Ambient 200 C/WCBETO-92 1997 Fairchild Semiconductor CorporationPN3644PNP General Purpose Amplifier(continued)Electrical Characteristics TA = 25C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test Conditions Min Max UnitsV(BR)CEOCollector-Emitter BreakdownVoltage*IC = 10 mA, IB = 0 45 VV(BR)CBO Collector-Base Breakdown Voltage IC = 100 A, IE = 045 VV(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 VICES Collector-Cutoff Current VCB = 30 V, IE = 0VCB = 30 V, IE = 0, TA = 65C352.0nAAIBL Base-Cutoff Current VCE = 30 V, IC = 0 35 nAON CHARACTERISTICS*hFEDC Current Gain VCE = 10 V, IC = 0.1 mAVCE = 10 V, IC = 1.0 mAVCE = 10 V, IC = 10 mAVCE = 10 V, IC = 150 mAVCE = 2.0 V, IC = 300 mAVCE = 1.0 V, IC = 50 mA40801001002080300240VCE(sat)Collector-Emitter Saturation Voltage IC = 50 mA, IB = 2.5 mAIC = 150 mA, IB = 15 mA0.250.4VVVBE(sat)Base-Emitter Sat