IC 工艺流程简介.pdf

1 CONFIDENTIAL Gold Bumping Process Flow Gold Bumping Process Flow and Control Planand Control Plan 1 PEI Chipmore 2 CONFIDENTIAL Chip Gold BumpWafer IQCSputterPhotoPlatingEtchFQC Before bumping process After bumping process ChipWafer Al pad 3 CONFIDENTIAL SputterUBM Deposition TiW Au Photo Photo process PlateAu Plating Etch PR stripping Au TiW etching and Anneal Mask Gold bumping process flow IQCSputterPhotoPlatingEtchFQC 4 CONFIDENTIAL 1 Wafer IQC Microscope Macro view Flow Broken chipping crack etc Naked eye High intensity light Macro view ImageControl ItemMachineInspection view Confirm the quality of the incoming wafers 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 5 CONFIDENTIAL 2 Sputter 1 Machine Sputter 2 Control item UBM Thickness UBM Resistance Al pad Passivation TiW Au Flow Deposit UBM layer 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 6 CONFIDENTIAL 3 PR Coating 1 Machine Coater 2 Control item PR Thickness Uniformity Photo resist Al pad Passivation Flow Coat PR layer on the wafer surface 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 7 CONFIDENTIAL 4 UV exposure 1 Machine Stepper 2 Control item UV energy Uniformity Mask Photo resist Ultraviolet Flow Transfer the bump layout to the PR surface Al pad Passivation 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 8 CONFIDENTIAL 5 Develop 1 Machine Dip type developer 2 Control item Etch efficiency Flow Dissolve the unexposed PR and form the PR pattern Photo resist Al pad Passivation 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 9 CONFIDENTIAL 6 ADI 1 Machine Microscope 2 Control item Appearance Misalignment Microscope Flow Confirm the quality of the photo process Al pad Passivation Photo resist 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 10 CONFIDENTIAL Al pad Passivation Photo resist 7 Hard Bake 1 Machine Flood exposure machine Oven 2 Control item UV energy Temperature Rigid Flow Make the PR rigid to prevent bump deformed Ultraviolet 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 11 CONFIDENTIAL 8 Plasma Descum 1 Machine Plasma Asher 2 Control item Leak Rate Etch Rate Al pad Passivation Photo resist Clean Clean the PR residue of the PR opening Change wafer surface from hydrophobic to hydrophilic Flow 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 12 CONFIDENTIAL 9 ADM 1 Machine Alpha Step Surface Profiler Tooling Microscope 2 Control item PR thickness Bump opening size Photo resist Al pad Passivation Flow Measure the PR THK opening size 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 13 CONFIDENTIAL 10 Plating 1 Machine Gold Plater 2 Control item Output current Au concentration PH Value Specific gravity Electroplated Au Photo resist Al pad Passivation Flow Plate the Au bump in the PR opening 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 14 CONFIDENTIAL 11 APM 1 Machine Alpha Step Surface Profiler 2 Control item Bump height Electroplated Au Al pad Passivation Photo resist Alpha Step Surface Profiler Flow Check the quality of Au bump 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 15 CONFIDENTIAL 12 PR stripping 1 Machine Chemical Station 2 Control item Temperature Al pad Passivation Photoresist Electroplated Au Flow Remove the PR layer 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 16 CONFIDENTIAL 13 Gold Etching 1 Machine Chemical Station 2 Control item Etch Amount Al pad Passivation Photoresist Electroplated Au Gold Etching Flow Remove the Au layer between bumps 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 17 CONFIDENTIAL 14 Gold AEI 1 Machine Microscope 2 Control item Appearance Au residue Foreign material Al pad Passivation Photoresist Electroplated Au Microscope Flow Check the result of Au etching 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 18 CONFIDENTIAL 15 TiW Etching 1 Machine Chemical Station 2 Control item Etch efficiency Flow Al pad Passivation Photoresist Electroplated Au Remove the TiW layer between bumps 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 19 CONFIDENTIAL 16 Anneal 1 Machine Oven Furnace 2 Control item Temperature Al pad Passivation Photoresist Electroplated Au Soften Flow Soften the bump to meet customer s hardness requirement 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 20 CONFIDENTIAL 17 FQC Measurement Flow Hardness tester Alpha Step Surface profilerTooling Microscope Shear tester Shear testerShear strength Hardness testerHardness Co planarity Roughness Alpha step Surface profiler Bump height Tooling MicroscopeBump size MachineFQM Item Measure the bump characteristics 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 21 CONFIDENTIAL 17 FQC Inspection Microscope Flow For multi chip product COG product Single chip design All product Single chip design Product Type MicroscopeManual Inspection Hitachi Tosok 3D Auto inspector 3D Auto Inspection August 2D Auto inspector 2D Auto Inspection MachineInspection Method Inspect the appearance performance 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17 FQC 18 Inking 20 Wafer Packing 19 QC Gate 11 APM 22 CONFIDENTIAL 18 Inking 1 Machine Ink machine 2 Control item Ink size Ink position Appearance Flow Ink the defect dies to distinguish with the good dies Defect Die Good Die 1 IQC 2 Sputter 3 PR Coating 4 UV exposure 5 Develop 6 ADI 7 Hard Bake 8 Plasma Descum 9 ADM 10 Plating 12 PR Stripping 13 Gold Etching 14 Gold AEI 15 Ti W Etching 16 Anneal 17