工艺技术_晶片的来料检验

PCissueinspectionrequisition BoxLabel DevicetypeLotnoCustomernameQuantity VisualSample PackingconditionWaferQtyAnydamage400 x 100 x Dimension ThicknessInkthickness CompleteInspectionReports IncomingWaferInspection PQI004 Chipoutsonedgeofdieshallnotpenetrateintoanyactivecircuitarea Note Activecircuitareaisdefinedasfromoutsideedgeofthebondpadsinward exceptwherethereisanactivelineinthedesignlocatedbeyondtheoutsideedgeofthebondpads Cracks 裂縫 碎片 邊緣 不可 穿透 線路 活性的 採納 報廢 Cracksshallnotbelongerthan1 0milinsideactivecircuitareathatpointstowardoperatingmetalorfunctionalcircuitelement 裂縫 不可 超過限度 機能 線路 組成 Cracksthatdonotpointtowardoperatingmetalorfunctionalcircuitelementsshallnotexceed5 0milsinlength Silicon GaAsDie 裂縫 指向 不 線路 活性的 不可 超過限度 Discolorationinglassivationouterlayerisharmlessandshallbeacceptable providingitisnotobscuringanyotherdamage Thereshallbenocorrosioninmetallization oranyotherlayers Metallizationhavinganylocalizeddiscolorationshallbecloselyexaminedandshallberejected unlessitisdemonstratedtobeaharmlessfilm glassivationinterface orothernon obscuringeffects DiscolorationorCorrosion 變色 腐蝕狀態 玻璃鈍化 ThereshallbenoConductive opaque ForeignMaterialonthetopofunglassivateddiethatislargeenoughtobridgetwoormoreadjacentmetallizationareas andthatcannotberemoved ContaminationorForeignmaterial 混淆 外來 料子 不透明 橋梁 ContaminationorForeignmaterial Thereshallbenoconductive opaque ForeignMaterialunderthetopglassivationlayerofthediethatislargeenoughtobridgetwoormoreadjacentmetallizationareas Thereshallbenoattachedorembeddedmaterialindiethatbridgestwoactivecircuitelements GaAs Thereshallbenoattachedorembeddedmaterialindiethatreducesspacingoftwoactivecircuitelementsbygreaterthan50percent Silicon Thereshallbenoattachedorembeddedmaterialindiethatdoesnotprovideavisiblelineofseparationbetweentwoactivecircuitelements 附加在 深留 料子 Thereshallbenoliquiddrops chemicalstains inkorphotoresistontopofunglassivatedareasthatbridgestwoactivecircuitelements Liquiddrops chemicalstains inkorphotoresistontopofglassivatedportionofthedieareacceptable 液體 水滴 化學 污點 光致抗蝕劑 GaAs requirementonly Thereshallbenocrackingorchippingwithinactivecircuitarea Thereshallbenochipoutsthatextendbeyond50percentofthesubstratethicknessorcracksinsidewallsgreaterthan5 0mils Silicon Shallhaveavisiblelineofseparationbetweenbondpadsand oroperatingmetallization Bridgingandshorting 連結 短 路 墊 ACTIVECIRCUIT Allareasfromoutsideedgeofthebondpadsinward exceptwherethereisanactivelineinthedesignlocatedbeyondtheoutsideedgeofthebondpads DIFFUSION Electricalisolationofoneormoreactivecircuits GLASSIVATION Toplayeroftransparentinsulatingmaterialthatcoversactiveareaexceptforbondpads PASSIVATIONLAYER Insulatingmaterialondiepriortodepositionofmetalorbetweenmetallayers Note Somediebydesignmaynothaveaglassivationlayer Glassivation Thereshallbenocrazingorglassivationdamagethatprohibitsvisualinspection Thereshallbenocrazingorvoidsoverafilmresistor Thereshallbenoliftingorpeelingmorethan1 0milinsidetheactiveareasfromthedesignededgeoftheglassivation 玻璃鈍化 Thereshallbenoglassivationvoids cracks notcrazing orscratchesthatexposestwoormoreadjacentactivemetallizationpaths Thereshallbenounglassivatedareagreaterthan5 0mils Thereshallbenounglassivatedareainsideofactiveareawhichexposesbaresemiconductormaterial Thereshallnotbeglassivationovermorethan25percentofbondpad 洞穴 裂縫 Thereshallbenodiffusionfaultthatallowsbridgingbetweendiffusedareas 放散 Thereshallbenobreaksindiffusion exceptisolationwallsaroundunusedareasorunusedbondingpads Thereshallbenoreductionofdiffusiongreaterthan75percent 50percentforresistors oforiginalwidth exceptisolationwallsaroundunusedareasorunusedbondingpads Thereshallbenoabsenceofglassivationoverjunctionlines Voidsinthebondingpadshallnotreducemetallizationbymorethan25percent Voidsinthefilletareashallnotreducethemetallizationpathwidthconnectingthebondtotheinterconnectingmetallizationtolessthan50percentofthenarrowestenteringmetallizationstripewidth 洞穴 Scratches probemarks etc inbondpadsshallnotremovemorethan50percentofthemetalorexposeunderlyingmaterial 探討 印子 在下面的 Scratchesinmetaltracesshallnotresultinanyshorts Thereshallbenoscratchesinmetaltracesthatresultinapossiblelayertolayershort Scratchesorvoidsonmetaltracesshallnotbegreaterthan50percentofthetracewidth W Groundingareasmayhavesmallvoidsinthetopmetallizationlayer Holesshallnotpenetratesub layers Note Adjustingofthemicroscopefocusordarkvisionwillhelpindeterminingifsub layersarepenetrated Thereshallbenovoidsinanycapacitors Activecircuitmetallizationshallhavenodelaminat