CMOS双阱工艺技术

CMOS工艺技术 CSMC HJ WaferFabricationProcessTechnology CMOS CMOS Startingwithasiliconwafer CrossSectionoftheSiliconWafer MagnifyingtheCrossSection CMOS n p wellFormation GrowThinOxide DepositNitride DepositResist siliconsubstrate UVExposure DevelopResist EtchNitride n wellImplant RemoveResist CMOS n p wellFormation siliconsubstrate GrowOxide n well RemoveNitride p wellImplant RemoveOxide Twin wellDrive in RemoveDrive InOxide CMOS LOCOSIsolation GrowThinOxide DepositNitride DepositResist UVExposure DevelopResist EtchNitride RemoveResist CMOS LOCOSIsolation DepositResist UVExposure DevelopResist FieldImplantB RemoveResist GrowFieldOxide RemoveNitride RemoveOxide GrowScreenOxide CMOS TransistorFabrication VtImplant DepositResist UVExposure DevelopResist PunchthroughImplant RemoveResist RemoveOxide Fox GrowGateOxide CMOS TransistorFabrication DepositPolySi PolySiImplant DepositResist UVExposure DevelopResist EtchPolySi RemoveResist Fox CMOS TransistorFabrication DepositThinOxide DepositResist UVExposure DevelopResist n LDDImplant RemoveResist Fox polySi polySi CMOS TransistorFabrication DepositResist UVExposure DevelopResist p LDDImplant RemoveResist DepositSpacerOxide EtchSpacerOxide Fox polySi polySi CMOS TransistorFabrication DepositResist UVExposure DevelopResist n S DImplant RemoveResist Fox polySi polySi CMOS TransistorFabrication DepositResist UVExposure DevelopResist p S DImplant RemoveResist Fox polySi polySi n n CMOS Contacts Interconnects DepositBPTEOS BPSGReflow PlanarizationEtchback DepositResist UVExposure DevelopResist ContactEtchback RemoveResist Fox polySi polySi n n p p CMOS Contacts Interconnects DepostMetal1 DepositResist UVExposure DevelopResist EtchMetal1 RemoveResist Fox polySi polySi p p n n BPTEOS CMOS Contacts Interconnects DepositIMD1 DepositSOG PlanarizationEtchback DepositResist UVExposure DevelopResist ViaEtch RemoveResist Fox polySi polySi p p Metal1 n n BPTEOS CMOS Contacts Interconnects DepositMetal2 DepositResist UVExposure DevelopResist EtchMetal2 RemoveResist DepositPassivation Fox polySi polySi p p Metal1 n n BPTEOS IMD1 SOG 附 CMOSProcess CMOS工艺集成电路 CMOS集成电路工艺 以P阱硅栅CMOS为例 1 光刻I 阱区光刻 刻出阱区注入孔 N Si N Si SiO2 CMOS集成电路工艺 以P阱硅栅CMOS为例 2 阱区注入及推进 形成阱区 N Si P CMOS集成电路工艺 以P阱硅栅CMOS为例 3 去除SiO2 长薄氧 长Si3N4 N Si P Si3N4 CMOS集成电路工艺 以P阱硅栅CMOS为例 4 光II 有源区光刻 N Si P Si3N4 CMOS集成电路工艺 以P阱硅栅CMOS为例 5 光III N管场区光刻 N管场区注入 以提高场开启 减少闩锁效应及改善阱的接触 光刻胶 CMOS集成电路工艺 以P阱硅栅CMOS为例 6 光III N管场区光刻 刻出N管场区注入孔 N管场区注入 CMOS集成电路工艺 以P阱硅栅CMOS为例 7 光 p管场区光刻 p管场区注入 调节PMOS管的开启电压 生长多晶硅 CMOS集成电路工艺 以P阱硅栅CMOS为例 8 光 多晶硅光刻 形成多晶硅栅及多晶硅电阻 多晶硅 CMOS集成电路工艺 以P阱硅栅CMOS为例 9 光 I P 区光刻 P 区注入 形成PMOS管的源 漏区及P 保护环 CMOS集成电路工艺 以P阱硅栅CMOS为例 10 光 N管场区光刻 N管场区注入 形成NMOS的源 漏区及N 保护环 CMOS集成电路工艺 以P阱硅栅CMOS为例 11 长PSG 磷硅玻璃 CMOS集成电路工艺 以P阱硅栅CMOS为例 12 光刻 引线孔光刻 CMOS集成电路工艺 以P阱硅栅CMOS为例 13 光刻 引线孔