管子选型损耗计算(3.26).doc

1.主管：150V管子损耗(W)50V输入28V输入12.5V输入管型15V输出5V输出15V输出5V输出15V输出5V输出备注（15W）SiR838DP0.161270.161580.130180.132850.17380.1834935ASi7738DP0.169760.170330.135580.1383Si7430DP0.156160.156820.133710.13796Si4472DY0.156160.156820.133710.1379650V输入28V输入12.5V输入15V输出5V输出15V输出5V输出15V输出5V输出备注（30W）SiR838DP0.227550.240.23430.25410.467480.5129335ASi7738DP0.24020.253760.242420.2627Si7430DP0.23070.244720.270590.29817以SiR838DP为例：工况 15V输出/12.5V输入/15W功率 管子工况： 参数准备： 计算过程：a开关损耗b电容损耗c驱动损耗计算结果(总损耗)：2.同步整流管：100V(当输出为15V时的整流管)损耗(W)50V输入28V输入12.5输入管型15V输出15V输出15V输出备注（15W）Si4100DY0.073690.08653Si4484EY0.073140.06206Si4486EY0.098470.09138Si7454DP0.070740.059660.10727.8A15V输出15V输出15V输出备注（30W）Si4100DY0.159250.25099Si4484EY0.096290.09487Si4486EY0.13280.14737Si7454DP0.093890.09247SiR432DP0.116130.133690.304828ASi7322DN0.124710.18165Si4190DY(6V)0.495140.27184SiS892DN(6V)0.265420.166963 . 同步整流管：50V(含高于50V的管子) (当输出为5V时的整流管)损耗(W)50V输入28V输入12.5输入管型5V输出5V输出5V输出备注（15W）Si7164DP0.134930.128750.1726760ASi7174DP0.141130.13669Si7186DP0.143820.1559Si7852ADP0.120780.15714SiE876DF0.151410.14006SiJ482DP(6V)0.160370.11419SiR662DP(6V)0.245640.12312SiE818DF(6V)0.131070.13847SiR826DP(6V)0.192710.11276SiR880DP(6V)0.189220.12079SiS468DN(6V)0.113980.163555V输出5V输出5V输出备注（30W）Si7164DP0.179990.212290.4167260ASi7174DP0.190420.22966Si7186DP0.237990.32512Si7852ADP0.263120.43449SiE876DF0.209780.22666SiJ482DP(6V)0.246000.24628SiR662DP(6V)0.322260.18368SiE818DF(6V)0.232110.30861SiR826DP(6V)0.251580.20297SiR880DP(6V)0.274690.24199SiS468DN(6V)0.327970.58488(1) NPN柱电流=3A, Vceo=60V, fp=130MHz, Hfe=100-300(2) PNP柱电流=3A, Vceo=60V, fp=130MHz, Hfe=100-300（3）P沟道JFET, Id=2A；Vds=100V ; Pd=20W（4）TLV431，尺寸尽量小，尺寸小于So8，损耗同TLV431（70mW）,封装SOT-23。（5）光耦PS2801能否封装为SO-4给出上述原型管和国产化尺寸，要求封装兼容，尽量小。4.供电推挽三极管(1)管子型号FZT851TA(NPN) 2SD965AIc=6A, Icc=2mA , Vceo=60V, fp=130MHz, Hfe=100-300(2) 管子型号FZT951TA(PNP) HB772HQIc=6A, Icc=1mA , Vceo=60V, fp=125MHz, Hfe=100-3005.启动管子(1) P沟道GFET, 管子型号2N6845Id=4A, Vds=100V ,Pd=20w,R