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1、毕业设计(论文)外文翻译(原文)Electrode layout of ZnO pyroelectric sensorsAbstractIn the present study, an electrode layout of pyroelectric sensors is developed to improve electric signals. Voltage responsivity is a maintarget to enhance the performance of pyroelectricsensors. A partially covered, topelectrode ha

2、s been proven to effectivelyincrease thevoltage responsivityofpyroelectric sensors. In the experimental results, the proposed electrode layout with an array type in ZnO pyroelectric sensors possessed higher voltage signals, about 3.6 times that of a fully covered type, and about 2 times that of a pa

3、rtially covered type. Moreover, a finite element model is used to explore the temperature variation rate in ZnO pyroelectric sensors for both thefullycovered and the partially covered electrodes. In the simulationresults,the partially covered electrode can indeed improve the temperaturevariation rat

4、e in the ZnO layer.Keywords: MEMS。 Pyroelectric 。 Sensor 。 ZnO1. IntroductionMultilayer pyroelectric sensors have been successfully usedin many applications, such as pollution monitoring, hot imagedetectors, intruder alarms, and gas analysis. They possessmany advantages including non-cooled detectio

5、n, room-temperature operation, lower system costs, fast speeds, port-ability, having a wide spectral response with high sensitivityand being integrable with on-chip circuitry 1-3. The conventional pyroelectric sensors are comprised of a pyroelectriclayer sandwiched between top and bottom electrodes.

6、 The topside is exposed to a heat source. The dynamic response currentof pyroelectric sensors is proportional to the temperaturevariation rate of pyroelectric layers1 . A higher temperaturevariation rate in the pyroelectric layer leads to a higher response current for the pyroelectricsensors. A part

7、ially covered,topelectrode has been proven to result in a higher responsivitythan that of a fully covered electrode because it opens windows for the ZnO layer to directly come into contact with theheat source 4. Therefore, the electrode layout plays an important role in pyroelectric sensors. This co

8、ncept has beenexpanded to etch a three-dimensional pattern on the responsive element of LiTaO3 。 lateral temperature gradients will beinduced on the sidewall of responsive elements under homogenous irradiation. Therefore, the temperature variationrates of responsive elements increases, which can inc

9、rease thevoltage responsivity of pyroelectric sensors 5.ZnO is a unique material because it possesses various prop-erties like semiconductivity, piezoelectricity, and pyroelectricity. Wide band-gap wurtzitephaseZnO has attractedattentiondueto its versatilityin many promisingapplications,such asblue

10、and ultravioletlight emitters, transparentconductors,solar cell windows, gas sensors, photovoltaicdevices, pyroelectricimagingsensors, surface acoustic wave (SAW) devices and film bulk acoustic resonatorsby numerous methods, such as(FBAR). ZnO filmshave been synthesizedmetalorganic sputtering,chemic

11、al vapor deposition,pulsed laser deposition,molecular beam epitaxy,magnetronatomic layerdeposition,spray pyrolysis,the filtered cathodic vacuum arctechnique, and the sol-gel process. The quality of ZnO filmsobtained by these methods depends on the growth methodsand conditions. Thus, preferential ori

12、entation of ZnO films depends on growth conditions. The most densely packed andthermodynamically favorable growth orientation in a ZnOwurtzite structure is the one with the c- axis perpendicular to asubstrate. ZnO films, with the c-axis normal to the substrate,are preferred in many applications, suc

13、h as ZnO pyroelectricdevices 4, 6 and film bulk acoustic resonators 7. The pyroelectricity of ZnO is attributableto non-centro-symmetricalcrystalsand has a specificpolar axis along thedirection ofspontaneous polarization1, 2.Given that ZnO issubjectedwill producean electrictotemperature variations,

14、its internal polarization field. ZnO films are usually deposited by RF sputtering. The properties of ZnO are affected by sputtering conditions such as the composition of mixed process gases, working| Si iicon n iiri de I oyer _ Top elec trade (A uVr)Button elvdiitdeiAii Cr) Silicon substrate口 ZnO la

15、yerniiridt: taverQlnpdeclrodefAuCrl Sottom electrode (AwCr) Copper laerVertical viewA AcroAsocfion注意:英文翻译标题格式:Times New Roman 四号加粗;英文正文: Times New Roman 五号单倍行距。From:毕业设计(论文)外文翻译(译文)外文译文标题英文翻译是个好工作。英文翻译是个好工作。英文翻译是个好工作。英文翻译是个好 工作。英文翻译是个好工作。英文翻译是个好工作。英文翻译是个好工作。英文翻译是个 好工作。英文翻译是个好工作。英文翻译是个好工作。英文翻译是个好工作。英

16、文翻译是 个好工作。英文翻译是个好工作。注意:中文译文标题格式:宋体-三号-加粗;正文格式:宋体五号行距:1.25倍行距。(1)翻译的资料必须与毕业设计有关(2)翻译后至少有2000汉字(3)文字简练、准确(特别注意术语)、流畅出处:关于XXXXXX研究文献综述湖州师范学院信息与工程学院(信息与工程系)060833张三摘要: 本文归纳了和研究中的关键问题,分析了及其的研究现状和发展趋势。在 此基础上,对的进一步研究进行了展望。关键词:xxx,xx,xxx,xxxx,xxxxx1、引言【第一小段:被研究问题的提出及其实践意义】【第二小段:简述被研究问题的现状和发展】【第三小段:研究这个问题的目的和动机】文献综述应对相关领域的研究情况和发展趋势作综合性评述。文献综述不能写毕业设计本身的内容;文献综述除了写自己阅读的参考文献及主要观点,及字数达到2000以上,还主要的应有同学自己的见解,应为写论文服务的,不是阅读参考文献的内容摘要,文献综述内容不能是论文正文中的部分。参考文献在文中相应处标出。2xxxxx的研究现状与发展趋势2.1研究现状【第一小段:文献1提出一种技术,该技术,类似方法在文献2也被提及【第二小段:根据文献3、4,阐述被研究问题的现状和存在的问题200字左右

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