40GHzMMICPowerAmplifierinInPDHBTTechnology

1、40 ghz mmic power amplifier in inp dhbt technologyhttp:/ 2002ucsb introduction transferred-substrate power dhbt technology circuit design results conclusionintroduction lec 2002applications for power amplifiers in ka band satellite communication systems wireless lans local multipoint distribution sy

2、stem personal communications network links and digital radio mmic amplifiers in this frequency bandkwon et. al., ieee mtt, vol.48, no. 6, june. 2000 3 stage hemt, class ab, pout=1 w, gain=15 db, pae=28.5%, size=9.5 mm2 this work: single stage cascode inp dhbt, class a, pout=50 mw, gain=7 db, pae=12.

3、5% size=0.42 mm2 transferred-substrate hbt mmic fabrication mbe dhbt layer structure band profile at vbe=0.7 v, vce=1.5 vinp 8e17 si 300 emitter ingaas 1e19 si 500 grade 1e19 si 200 inp 1e19 si 900 grade 8e17 si 233 grade 2e18 be 67 ingaas 4e19 be 400 grade 1e16 si 480 inp 2e18 si 20 inp 1e16 si 250

4、0 multiple stop etch layersbuffer layer 2500 base collector substrate400 ingaas base3000 inp collector0.01.02.03.04.05.06.000.511.522.53vce(v)ic(ma)0102030401101001000gains (db)frequency (ghz)uh21462395343139small-area t.s. dhbts have high cutoff frequencies. ucsbsangmin lee0.01.02.03.00123456789vce

5、(v)ic(ma)bvceo = 8 v at je =0.4 ma/m2fmax = 462 ghz, ft = 139 ghzvce(sat) 1 v at 1.8 ma/m2design difficulties with large-area power dhbtsucsbyun weiaro muri thermal instability further increasescurrent non-uniformityictemperaturecollectorsinemittercontactbasepolybcbbcbmetal stripau viasteady state c

6、urrent and temperature distribution when thermally stablebase feed sheet resistance: s= 0.3 / significant for 8 um emitter finger lengthlarge area hbts: big ccb, small rbb, even small excess rbb substantially reduces fmax0.08 memitter contactmetal1base contactcurrent hogging in multi-finger dhbt:dis

7、tributed base feed resistance:ictemperature1/ unless unstable /1 constant at mv/k 1 . 1fingers 2between difference re temperatuinitial assumestability thermaleballastexjacebejaccebeeballastexcbebecbeqiktrrvdtdvkptivpvqiktrritdtdvvtidtdvtk330 ghz, vbrceo7 v,jmax1x105 a/cm2100 ma, 3.6 volt device2nd-l

8、evel base feed metalballast resistoremittercollectorflip chipyun weiaro muriucsbhbt power amplifier-why cascode?aro muriyun weiib1* r. ramachandran and a.f. podell segmented cascode hbt for microwave-frequency power amplifiers advantages:common-base stage has large vce large output power common-emit

9、ter-stage has low vce small rballast required maintains large available power gain disadvantageinductance of base bypass capacitoreven small l greatly degrades gain vce1vce2+-+-ie1rballastie2radial stub capacitorcommon basestage mesacommon emitterstage mesabias 2bias 3bias 1ucsbinp ts dhbt power amp

10、lifier designaro muriyun weioptimum admittance matchinput matchlow frequency stabilization4 parallel cascode amplifier4 parallel cascode amplifier8 finger cascodeinter-stage dc bias/4/4imax0.00.51.01.52.02.53.03.54.04.55.05.56.06.57.0vce (v)0.0000.0020.0040.0060.0080.0100.0120.0140.0160.018ic (a)vce

11、_brvsat40 ghz 128 m2 power amplifierucsbcascode pa0.6mm x 0.7 mm, ae=128 m2 aro murif0=40 ghz bw3db=16 ghz gt=7 db p1db=14 dbm psat=17 dbm 4db gain-40-30-20-10010202530354045sij, dbfrequency, ghzs21s11s22-50510152002468101214-15-10-5051015pout, gt, dbmpae, %pin, dbmgtpoutpaeyun weiucsbyun weicommon

12、base pa-5051015200246810-15-10-5051015pout, dbmgt, dbpin, dbmgtpout-30-25-20-15-10-505108090100110s11, s21, s22 frequency, ghzs21s22s110.5mm x 0.4 mm, ae=128 m2 aro muribias: ic=78 ma, vce=3.6 v f0=85 ghz bw3db=28 ghzgt=8.5 dbp1db=14.5 dbmpsat=16dbm, associated gain: 4.5 dby. wei et al, 2002 ieee mt

13、t-s symposiumw band power amplifiers in ts inp dhbt technologyw band power amplifiers in ts inp dhbt technologyucsbyun weicascode pa0.5mm x 0.4 mm, ae=64 m2 aro muri-50510150246810-15-10-50510pout, dbmgt, dbpin, dbmgtpout-25-20-15-10-50510158090100110s11, s21, s22, dbfrequency, ghzs21s22s11bias: ic=

14、40 ma, vce=3.5 v f0=90 ghzbw3db=20 ghzgt=8.2 dbp1db=9.5 dbmpsat=12.5 dbm, associated gain: 4 dby. wei et al, 2002 ieee mtt-s symposiumcontinuing workhigher-current dhbts for increased mm-wave output power250 ghz fmax, ic,max=240 ma, thermally stable at 200 ma bias at vce=3.2 volts suitable for w-ban

15、d 150 mw power amplifiersw-band dhbt power amplifiersdesigns for 100 mw saturated output power now being testedresults to be reported subsequentlyucsbyun weilec 2002conclusions 40 ghz mmic power amplifier in inp dhbt technology 7 db power gain and 14 dbm output power at 1 db compression. 17 dbm (50 mw) saturated output power 12.5% peak power added efficiency future work: higher power dhbt