微电子中英文辞典36

1、微电子中英文辞典Abrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源(放大)区Admittance 导纳Allowed b

2、and 允带Alloy-junction device 合金结器件Aluminum(Aluminium) 铝Aluminum - oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的第 51 页Ambient temperature 环境温度Amorphous 无定形的，非晶体的Amplifier 功放 扩音器 放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的An ode 阳极 'CSS<TU|Arsenic (AS) 砷 xI nW 4<

3、;Auger 俄歇 p#Y$Fs:Auger process 俄歇过程 L(gmI "it9Avalanche 雪崩 wZ _h:=wAvalanche breakdown 雪崩击穿Avalanche excitation 雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带,MM/Band gap 能带间隙Barrier 势垒Barrier layer势垒层Barrier width势垒宽

4、度Base 基极Base contact 基区接触Base stretching基区扩展效应 Ggo5'A OBase transit time 基区渡越时间 <= RaW QBase transport efficiency 基区输运系数 -h1 JdE Base-width modulation 基区宽度调制 /m Z' z&|gBasis vector 基矢 *Cl5Y': |hBias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor二元化合物半导体Bipol

5、ar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bloch 布洛赫Blocking band 阻挡能带 3DY0Py ,Blocking contact 阻挡接触 rq xCjh DBody - centered 体心立方 !HL=-bpBody-centred cubic structure体立心结构BvWW'、ubjBoltzmann 波尔兹曼 ,) rxpf 'LBond 键、键合siiBC'Bonding electron 价电子 'K"m 8kI2Bonding pad 键合点 db v6ZBoots

6、trap circuit 自举电路 A7Y -'.&iBootstrapped emitter follower - 自举射极跟随器Boron 硼Borosilicate glass硼硅玻璃Boundary condition边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊 FBrillouin zone 布里渊区Built-in 内建的Build-in electric field内建电场Bulk 体/ 体内Bulk absorption体吸收Bulk genera

7、tion体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region隐埋扩散区Can 外壳Capacitance 电容Capture cross section俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdow

8、n 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition电中性条件Charge drive/exchange/sharing/transfer/storage电荷驱动 / 交换 / 共享/转移/ 存储Chemmical etchin

9、g 化学腐蚀法Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP) 化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compe nsated OP-AMP 补偿运放Co

10、mmon-base/collector/emitter connection共基极 /集电极 / 发射极连接Common-gate/drain/source connection共栅/漏/ 源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circ

11、uit 互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design (CAD)/test(CAT)/manufacture(CAM)计算机辅助设计 / 测试 / 制造Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带( 底)Conduction level/state导带态Co

12、nductor 导体Conductivity 电导率Configuration 组态Conlomb 库仑Conpled Configuration Devices 结构组态Constants 物理常数Constant energy surface 等能面Constant-source diffusion 恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled

13、 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible 坩埚 4da'Crystal defect/face/orientation/lattice晶体缺陷 / 晶面 / 晶向 / 晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing电流漂移 /驱动/ 共享Current Sense 电流取样

14、Curvature 弯曲Custom integrated circuit定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique切克劳斯基技术( Cz 法直拉晶体 J) )Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel (dB) 分贝Decode 译码Deep acceptor level深受主能级Deep donor level 深施主能级Deep impurity

15、level深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度摄氏 / 开氏温度Degradation 退化Degree Celsius(centigrade) /KelvinDelay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Deple

16、tion MOS 耗尽 MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数 dice ）Diode 二极管Dielectric 介电的Dielectric isolation介质隔离Difference-mode input差模输入Differential amplifier差分放大器Differential capacitance微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient扩散系数Diffu

17、sion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace扩散电容 / 势垒 / 电流/炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed cap

18、acitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration掺杂浓度Double-diffusive MOS(DMOS) 双扩散 MOSDrift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation干/ 湿法氧化Dose 剂量Duty cycle 工作周期Du

19、al-in-line package( DIP) 双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation(ship)爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM)一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electron affinity 电子亲和势Elec

20、tronic -grade 电子能Electron-beam photo-resist exposure光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water电子级纯水Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electrostatic 静电的Element 元素 / 元件 / 配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled

21、 pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量 - 动量 （E-K） 图Enhancement mode 增强型模式Enhancement MOS增强性 MOSEntefic （ 低） 共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer外延层Epitaxial slice外延片Expi

22、taxy 外延Equivalent curcuit 等效电路Equilibrium majority /minority carriers平衡多数 / 少数载流子Erasable Programmable ROM （EPROM） 可搽取（编程）存储器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic

23、semiconductor 杂质半导体Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution费米 - 狄拉克分布Femi potential 费米势Fick equation 菲克方程（扩散）Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Fl

24、at band 平带Flat pack 扁平封装Flicker noise闪烁（变）噪声Flip- flop toggle触发器翻转Floating gate浮栅Fluoride etch氟化氢刻蚀Forbidden band禁带Forward bias 正向偏置Forward blocking /conducting正向阻断 / 导通Frequency deviation noise频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs) 砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxi

25、de 栅氧化层Gauss( ian ) 高斯Gaussian distribution profile高斯掺杂分布Generation-recombination产生 - 复合Geometries 几何尺寸Germanium(Ge) 锗Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋- 潘 模型Gunn - effect 狄氏效应Hardened device 辐射加固器件Heat of

26、 formation形成热Heat sink 散热器、热沉Heavy/light hole band重/ 轻 空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor(HBT异质结双极型晶体High field property高场特性High-performance MOS.( H-MOS) 高性能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器

27、Hot carrior 热载流子Hybrid integration 混合集成Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering杂志散射Incremental resistance 电阻增量(微分电阻)In-contact mask 接触式掩模Indium tin oxide (ITO)铟锡氧化物Induced channel 感应沟道Infrared 红外

28、的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET(IGFET)绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay互连延时Interdigitated structure交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射

29、Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spaci

30、ng 结间距Junction side-wall 结侧壁Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力 / 晶胞 / 晶格 / 晶格常熟 / 晶格缺陷 / 晶格畸变Leakage current (泄)漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid phase epitaxial growth technique 液相外延生长技术

31、Lithography 光刻Light Emitting Diode(LED) 发光二极管Load line or Variable负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从 D 触发器Matching 匹配Maxwell 麦克斯韦Mean f

32、ree path 平均自由程Meandered emitter junction梳状发射极结Mean time before failure (MTBF)平均工作时间Megeto - resistance磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体 FETMetallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobi

33、lity 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor(MOST )MOS. 晶体管 Multiplication 倍增Modulator 调制Multi-chip IC多芯片 ICMulti-chip module(MCM) 多芯片模块Multiplication coefficient倍增因子Naked chip 未封装的芯片(裸片)Negative feedback 负反馈Negative resistance 负阻Nesting 套刻

34、负温度系数Negative-temperature-coefficientNoise margin 噪声容限Nonequilibrium 非平衡Nonrolatile 非挥发(易失)性Normally off/on常闭 / 开Numerical analysis 数值分析Occupied band 满带Officienay 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置光猝灭Operational amplifier (OPAMP) 运算放大

35、器Optical photon =photon 光子 Optical quenchingOptical transition 光跃迁Optical-coupled isolator光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask 非接触式掩模Output characteristic输出特性Output voltage swing输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage

36、 protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passination 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage峰点电压Peak v

37、oltage 峰值电压Permanent-storage circuit 永久存储电路 Period 周期Periodic table周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process光刻工艺（photo） resist （光敏）抗腐蚀

38、剂 Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应） Planar process 平面工艺Planar transistor平面晶体管Plasma 等离子体Plezoelectric effect压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Potential ( 电) 势Potential barrier 势垒Potential well 势阱Power dis

39、sipation功耗Power transistor功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通脉冲触发 / 调制Pulse triggering/modulatingPulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pul

40、l stage 推挽级Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi - Fermi level 准费米能级Quartz 石英Radiation conductivity辐射电导率Radiation damage 辐射损伤Radiation flux density辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radioactiv

41、e 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管 Reciprocal lattice倒核子Recovery time 恢复时间Rectifier 整流器（管） Rectifying contact整流接触Reference 基准点 基准 参考点 Refractive index 折射率Register 寄存器Registration 对准Regulate 控制 调整Relaxation lifetime驰豫时间Reliability

42、 可靠性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Relaxation 驰豫Resonant frequency 共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置Sampling circuit 取样电路Sapphire 蓝宝石（ Al2O3）Satellite valley卫星谷Saturated current range电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scatte

43、ring 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体可控硅Semiconductor-controlled rectifierSendsitivity 灵敏度Serial 串行 / 串联Ser

44、ies inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2)二氧化硅Silicon Nitride(Si3N4)氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single

45、crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat(PT) 热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋 Split 分裂Spontaneous emission 自发发射Spreading resistance 扩展电阻Sputter 溅射Stacking fault 层错Static characteristic静态特性Stimulated emission受激发射Stimulated recombination受激复合Storage