STM32使用FSMC控制NANDflash例程概要

1、本文原创于观海听涛，原作者版权所有,转载请注明出处。近几天开发项目需要用到 STM32驱动NAND FLASH，但由于开发板例程以及 固件库是用于小页（512B,我要用到的FLASH为1G bit的大页（2K,多走了两天弯 路。以下笔记将说明如何将默认固件库修改为大页模式以驱动大容量NAND,并作驱动。本文硬件：控制器:STM32F103ZET6,存储器:HY27UF081G2A首先说一下NOR与NAND存储器的区别，此类区别网上有很多，在此仅大致说明：1、Nor读取速度比NAND稍快2、Na nd写入速度比Nor快很多3、NAND擦除速度（4ms远快于Nor（5s4、Nor带有SRAM接口，

2、有足够的地址引脚来寻址，可以很轻松的挂接到CPU 地址和数据总线上，对CPU要求低5、NAND用八个（或十六个引脚串行读取数据，数据总线地址总线复用，通常需 要CPU支持驱动，且较为复杂& Nor主要占据1-16M容量市场，并且可以片内执行，适合代码存储7、NAND占据8-128M及以上市场，通常用来作数据存储8、NAND便宜一些9、NAND寿命比Nor长10、NAND会产生坏块，需要做坏块处理和ECC更详细区别请继续百度，以上内容部分摘自神舟三号开发板手册F面是NAND的存储结构：由此图可看出NAND存储结构为立体式正如硬盘的盘片被分为磁道，每个磁道又分为若干扇区,一块nand fl

3、ash也分为 若干block,每个block分为如干pageo 般而言，block、page之间的关系随着芯片 的不同而不同。需要注意的是 对于flash的读写都是以一个page开始的,但是在读写之前必须 进行flash的擦写，而擦写则是以一个block为单位的。我们这次使用的HY27UF081G2A其PDF介绍：Memory Cell Array=(2K+64 Bytes x 64 Pages x 1,024 Blocks由此可见该NAND每页2K,共64页,1024块。其中：每页中的2K为主容量 Data Field, 64bit为额外容量Spare Field。Spare Field用于

4、存贮检验码和其他信息用 的，并不能存放实际的数据。由此可算出系统总容量为2K*64*1024=134217728个byte,即1Gbit。NAND闪存颗粒硬件接口 :由此图可见，此颗粒为八位总线,地址数据复用，芯片为SOP48封装。软件驱动:(此部分写的是伪码，仅用于解释含义，可用代码参见附件主程序：1. #define BUFFER_SIZE 0x2000 /此部分定义缓冲区大小，即一次写入的数据2. #defi ne NAND_HY_MakerlD 0xAD /NAND 厂商号3. #define NAND_HY_DevicelD 0xF1 /NAND 器件号4. /*配置与 SRAM 连

5、接的 FSMC BANK2 NAND*/5. NANDn it(;6. /* 读取 Na nd Flash ID 并打印 */7. NAND_ReadlD(&N AND_ID;复制代码Tips:NAND器件的ID包含四部分：1st Man ufacturer Code2nd Device Identifier3rd Internal chip number, cell Type, Number of Simultaneously Programmed pages.4th Page size, spare size, Block size, Orga ni zati on1. if(NA

6、ND_ID.Maker_ID = NAND_HY_MakerlD && (NAND_ID.Device_ID=NAND_HY_DeviceID / 判断器件符合2. 3. /*设置NAND FLASH的写地址*/4. WriteReadAddr.Zo ne = 0x00;5. WriteReadAddr.Block = 0x00;6. WriteReadAddr.Page = 0x05;7. /*擦除待写入数据的块*/8. status = NAND_EraseBlock(WriteReadAddr; /写入前必须擦出9. /*将写Nand Flash的数据BUFFER填充为从

7、0x25开始的连续递增的一串数 据*/10. Fill_Buffer(TxBuffer, BUFFER_SIZE , 0x25; / 填充数据以测试11. /*将数据写入到 Nand Flash中。WriteReadAddr:读写的起始地址*/12. status = NAND_WriteSmallPage(TxBuffer, WriteReadAddr, PageNumber; /主 要写入函数，此部分默认为小页需要修改13. /*从Nand Flash中读回刚写入的数据。riteReadAddr:读写的起始地址*/14. status = NAND_ReadSmallPage (RxBuf

8、fer, WriteReadAddr, PageNumber;读 取主要函数，也需要修改15.15. /*判断读回的数据与写入的数据是否一致*/16. for(j = 0; j < BUFFER_SIZE; j+17. 18. if(TxBufferj != RxBufferj19. 20. WriteReadStatus+;21. 22. 24.23. if (WriteReadStatus = 024. 25. prin tf("nr Na nd Flash 读写访问成功"26. GPIO_ResetBits(GPIO_LED, DS2_PIN;27. 28. e

9、lse29. 30. prin tf("nr Na nd Flash 读写访问失败"31. prin tf("Ox%x",WriteReadStatus;34.32. GPIO_ResetBits(GPIO_LED, DS3_PIN;36.33. 34. 35. else36. 37. printf("nr 没有检测到 Nand Flash的 ID"38. GPIO_ResetBits(GPIO_LED, DS4_PIN;39. 复制代码fsmc_ nan d.c文件：1. void NAND_I nit(void2. 3. GPIO

10、n itTypeDef GPIOn itStructure;4. FSMC_NAND_PCCARDTimi ngln itTypeDef p;5. FSMC_NANDI ni tTypeDef FSMC_NANDI nitStructure;6.6. /*FSMC总线使用的GPIO组时钟使能*/7. RCC_APB2PeriphClockCmd(RCC_APB2Periph_GPIOD | RCC_APB2Periph_GPIOE |8. RCC_APB2Periph_GPIOF | RCC_APB2Periph_GPIOG, ENABLE;10.9. /*FSMC CLE, ALE, D0-

11、>D3, NOE, NWE and NCE2 初始化，推挽复用输出 */10. GPIO_lnitStructure.GPIO_Pin = GPIO_Pin_11 | GPIO_Pin_12 | GPIO_Pin_14 | GPIO_Pin_15 |11. GPIO_Pin_0 | GPIO_Pin_1 | GPIO_Pin_4 | GPIO_Pin_5 |12. GPIO_Pin_7;13. GPIOni tStructure.GPIO_Speed = GPIO_Speed_5OMH z;14. GPIOn itStructure.GPIO_Mode = GPIO_Mode_AF_PP

12、;15. GPIOn it(GPIOD, & GPI Oni tStructure;16. /*FSMC数据线FSMC_D4:7初始化，推挽复用输出*/17. GPIOni tStructure.GPIO_Pin = GPIO_Pin_7 | GPIO_Pin_8 | GPIO_Pin_9 | GPIO_Pin_1O;18. GPI Oni t(GPIOE, & GPIOn itStructure;19. /*FSMC NWAIT初始化，输入上拉*/20. GPIOn itStructure.GPIO_Pin = GPIO_Pin_6;21. GPIOni tStructure

13、.GPIO_Speed = GPIO_Speed_5OMH z;22. GPIOni tStructure.GPIO_Mode = GPIO_Mode_IPU;23. GPIOn it(GPIOD, & GPI Oni tStructure;24. /*FSMC INT2初始化，输入上拉*/25. GPIOn itStructure.GPIO_Pin = GPIO_Pin_6;26. GPIOn it(GPIOG, & GPI Oni tStructure;27. /*FSMC总线存储器参数配置*/28. p.FSMC_SetupTime = 0x1; /建立时间29. p.F

14、SMC_WaitSetupTime = 0x3; 等待时间30. p.FSMC_HoldSetupTime = 0x2; 保持时间31. p.FSMC_HiZSetupTime = 0x1; 高阻建立时间32. FSMC_NANDInitStructure.FSMC_Bank = FSMC_Bank2_NAND; / 使用FSMC BANK233. FSMC_NANDI nitStructure.FSMC_Waitfeature = FSMC_Waitfeature_E nable;使能FSMC的等待功能34. FSMC_NAND In itStructure.FSMC_MemoryDataW

15、idth =FSMC_MemoryDataWidth_8b; /NAND Flash 的数据宽度为 8位35. FSMC_NANDInitStructure.FSMC_ECC = FSMC_ECC_Enable; /使能 ECC 特 性36. FSMC_NANDI nitStructure.FSMC_ECCPageSize =FSMC_ECCPageSize_2048Bytes; /ECCK大小 204837. FSMC_NANDI nitStructure.FSMC_TCLRSetupTime = 0x00;38. FSMC_NANDI ni tStructure.FSMC_TARSetup

16、Time = 0x00;39. FSMC_NAND In itStructure.FSMC_Commo nSpaceTimi ngStruct = &p;40. FSMC_NANDI ni tStructure.FSMC_AttributeSpaceTimi ngStruct = &p;41. FSMC_NAND In it(&FSMC_NANDI nitStructure;42. /*!使能 FSMC BANK2 */43. FSMC_NANDCmd(FSMC_Ba nk2_NAND, ENABLE;44. 复制代码1. void NAND_ReadID(NAND_I

17、DTypeDef* NAND_ID2. 3. uin t32_t data = 0;4. /*!< Send Comma nd to the comma nd area */5. *(_IO ui nt8_t *(Ba nk_NAND_ADDR | CMD_AREA = 0x90;6. *(_IO ui nt8_t *(Ba nk_NAND_ADDR | ADDR_AREA = 0x00;7. /*!< Sequenee to read ID from NAND flash */8. data = *(_IO uin t32_t *(Ba nk_NAND_ADDR | DATA_A

18、REA;9. NAND_ID->Maker_ID = ADDR_1st_CYCLE (data;/ 四个周期读取四个 ID10. NAND_ID->Deviee_ID = ADDR_2 nd_CYCLE (data;11. NAND_ID->Third_ID = ADDR_3rd_CYCLE (data;12. NAND_ID->Fourth_ID = ADDR_4th_CYCLE (data;13. 复制代码1. uin t32_t NAND_WriteSmallPage(ui nt8_t *pBuffer, NAND_ADDRESS Address, uin t32

19、_t NumPageToWrite2. /传入参数:写入数据,写入初始地址，要写几页3. uin t32_t in dex = 0x00, nu mpagewritte n = 0x00, addressstatus = NAND_VALID_ADDRESS;4. uin t32_t status = NAND_READY, size = 0x00;5. while(NumPageToWrite != 0x00 && (addressstatus = NAND_VALID_ADDRESS && (status = NAND_READY6. 7. /*!<

20、Page write comma nd and address */8. *(_IO ui nt8_t *(Ba nk_NAND_ADDR | CMD_AREA = NAND_CMD_AREA_A;9. *(_IO ui nt8_t *(Ba nk_NAND_ADDR | CMD_AREA = NAND_CMD_WRITE0;10. *(_IO ui nt8_t *(Ba nk_NAND_ADDR | ADDR_AREA = 0x00;11. *(_IO ui nt8_t *(Ba nk_NAND_ADDR | ADDR_AREA = 0x00;/ 添加此句12. *(_IO ui nt8_t

21、 *(Ba nk_NAND_ADDR | ADDR_AREA = ADDR_1st_CYCLE(ROW_ADDRESS;13. *(_IO ui nt8_t *(Ba nk_NAND_ADDR | ADDR_AREA =ADDR_2 nd_CYCLE(ROW_ADDRESS;14. / *(_IO uin t8_t *(Ba nk_NAND_ADDR | ADDR_AREA = ADDR_3rd_CYCLE(ROW_ADDRESS; 原版有此句15. /*!< Calculate the size */16. size = NAND_PAGE_SIZE + (NAND_PAGE_SIZE

22、 * numpagewritten; 统计 写入数目17. /*!< Write data */18. for(; in dex < size; in dex+20. *(_IO uint8_t *(Ba nk_NAND_ADDR | DATA_AREA = pBufferi ndex;21. 22.23. *(_IO ui nt8_t *(Ba nk_NAND_ADDR | CMD_AREA =NAND_CMD_WRITE_TRUE1;24. /*!< Check status for successful operati on */25. status = NAND_Ge

23、tStatus(;26.26. if(status = NAND_READY27. 28. nu mpagewritte n+;29. NumPageToWrite-;30. /*!< Calculate Next small page Address */31. addressstatus = NAND_AddressI ncreme nt(&Address;32. 33. 35.34. retur n (status | addressstatus;复制代码读取函数同理修改1. uin t32_t NAND_EraseBlock(NAND_ADDRESS Address2. 3. *(_IO ui nt8_t *(Ba nk_NAND_ADDR | CMD_AREA = NAND_CMD_ERASEO;4