硫酸铜填孔电镀理论 ppt课件

1、硫酸銅填孔電鍍理論-有機物質成分Organic additivesOrganic additive speciesBrightener/acceleratorCarrier/suppressorLeveller電鍍反應 : ( 摘要) 可溶解性陽極Cu+Cu2+Cu2+CuCuSSCathodeReaction pathReaction pathActivationEnergyActivationEnergyFunction 1Reduce the activation energy and increase Cu deposition rateAdditive can be monitore

2、d by CVS using standard addition method or Hull CellAdditive ChemistryCu+Cu2+SSCathodeHigh probabilityLow probabilityFunction 2The side chains on the additive molecule has a barrier for Cu+ to deposit onto the surface.The probability to fill in steps and vacancies on the surface increases.Additive C

3、hemistry (Cont.)Cu+Cu+CuCuCuCuSSSSCathodeFunction 3The coverage of the additive on t h e s u r f a c e e n h a n c e d nucleation and formation of randomly oriented grains.Allows the formation a m i c r o s t r u c t u r e w i t h interlocking of randomly oriented grains.Additive Chemistry (Cont.)SS

4、H+H+CuSSHHCu2+Decomposition of additive on Cu surface, such as anode2S(-1) + 2e- 2S(-2)Cu Cu2+ + 2e-Occurred mainly during bath idlingAir bubbling during idling can usually solve the by-product formation issueControl of additive contentBy-product speeds up the Cu deposition at least 20 timesSHCu+Cu2

5、+CuCathodeReaction pathActivationEnergyA bath dominated by the by-product gives columnar microstructureControl of Additive content (Cont.)Cu+Cu2+CuSSCathodeReaction pathActivationEnergy EFFECT OF BRIGHTENER CONCENTRATION IN A COPPER STOCK SOLUTION WITH CARRIER0123456-0.35-0.3-0.25-0.2-0.15-0.1-0.050

6、0.050.1Potential (Volt)Current (mA)Copper Stock with 5 ml/l Carrier - 60 ppm Cl-Addition of 0.5 ml/l BrightenerAddition of 1 ml/l BrightenerAddition of 5 ml/l Brightener Additive 濃度對電鍍效率的影響Effect of Additive Conc. for Via Fill - Eductor( Via Depth 50um )50607080901000.20.30.81.31.523Additive Conc. (

7、ml/L)Filling Ratio (%)100um Via125um Via硫酸銅填孔電鍍 : Leveler dominate V.S no Leveler 系統比較優點缺點No leveler dominate 鍍層不純物較低, 擴散反應( 主導填孔)及適量的Additive 控制反應 容易分析控制 Carrier suppression 主導填孔機制.對流態較敏感. 需良好的 Air flow 或噴流.Leveler dominate 對流態較不敏感. 對Additive副產物較不敏感. Level/ Additive 比例主導填孔機制,但分析不易. 鍍層不純物相對較高, N atom. 物性相對較差. 三劑控制相對複雜 電鍍效率相對較差Mechanism of thin kneeCarrier #1Brightener #1levelerCarrier #2Brightener #2CompetitorsMicroFillVia Fill deposition modeMechanism of viafilling BrightenerCarrierPlating s