大学生电子竞赛电源类题目包13芯片参考csd18532kcs

1、Product FolderTools & SoftwareSample & BuyTechnical DocumentsSupport & CommuCSD18532KCSZHCSA49B AUGUST 2012 REVISED JULY 2014CSD18532KCS 60V N 通道 NexFET 功率金属氧化物半导体场效应晶体管 (MOSFET)1特性超低 Q 和 Q概要ggd低热阻雪崩额定值逻辑电平无铅端子镀层 符合 RoHS 标准无卤素晶体管 (TO)-220封装订购信息(1)2应用范围直流 - 直流转换次级侧同步整流器电机(1)要了解所有可用封装，请见数据

2、表末尾的可订购附录。最大绝对额定值3说明这款 60V，3.3m，TO-220 NexFET 功率MOSFET 被设计成在功率转换应用中最大限度地降低功率损耗。Drain (Pin 2)Gate (Pin 1)(1)脉冲持续时间 300s，占空比 2%Source (Pin 3)RDS(on) 与 VGS 间的关系栅极电荷1210108866442200024681012141618200510152025303540Qg - Gate Charge (nC)4550G001VGS - Gate-to- Source Voltage (V)G001PRODUCTION DATA informat

3、ion is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.English Data Sheet: SLPS361RDS(on) -(mOnW-State)VGS - Gate-to-Source Voltage (V)ID = 100A V

4、DS = 30VTC = 25°C Id = 100A TC = 125ºC Id = 100ATA = 25°C值VDS漏源电压60VVGS栅源电压±20VID持续漏极电流（受封装限制），TC = 25°C时测得100A持续漏极电流（受限制），TC = 25°C时测得169持续漏极电流（受限制），TC=100°C 时测得116IDM脉冲漏极电流 (1)400APD功率耗散250WTJ， Tstg运行结温和 储存温度范围-55 至 175°CEAS雪崩能量，单一脉冲ID = 75A，L = 0.1mH，RG = 2

5、5281mJ器件封装介质数量出货CSD18532KCSTO-220封装管50管TA = 25°C典型值VDS漏源电压60VQg栅极电荷总量 (10V)44nCQgd栅漏栅极电荷6.9nCRDS(on)漏源导通电阻VGS = 4.5V4.2mVGS = 10V3.3mVGS(th)阀值电压1.8VCSD18532KCSZHCSA49B AUGUST 2012 REVISED JULY 2014目录12345特性1应用范围1说明1修订历史2Specifications35.1 Electrical Characteristics35.2 Thermal Information35.3 T

6、ypical MOSFET Characteristics4器件和文档支持766.16.26.3商标7静电放告7术语表77机械数据87.1 KCS 封装. 84修订历史NOTE: Page numbers for previous revisions may differ from page numbers in the current version.Changes from Revision A (October 2012) to Revision BPage将 TC = 100°C 时的 ID 增加至 116A1将最大工作结温和温度增加至 175°C1Updated

7、Figure 1 from a normalized RJA to an RJC curve4Updated Figure 6 to extend to 175°C5Updated Figure 8 to extend to 175°C5Updated the SOA in Figure 106Updated Figure 12 to extend to 175°C6Changes from Original (August 2012) to Revision APage将 IDM 增加至 400A1Changed the Transconductance TYP

8、 value From: 146 S To: 187 S3Changed RJA From: MAX = 62°C/W To: MAX = 65°C/W3Changed Figure 242© 20122014, Texas Instruments IncorporatedCSD18532KCSZHCSA49B AUGUST 2012 REVISED JULY 20145 Specifications5.1 Electrical Characteristics(TA = 25°C unless otherwise stated)5.2 Thermal I

9、nformation(TA = 25°C unless otherwise stated)3Copyright © 20122014, Texas Instruments IncorporatedTHERMAL METRICMINTYPMAXUNITRJCJunction-to-Case Thermal0.6°C/WRJAJunction-to-Ambient Thermal62PARAMETERTEST CONDITIONSMINTYPMAXUNITSTATIC CHARACTERISTICSBVDSSDrain-to-Source VoltageVGS = 0

10、 V, ID = 250 A60VIDSSDrain-to-Source Leakage CurrentVGS = 0 V, VDS = 48 V1AIGSSGate-to-Source Leakage CurrentVDS = 0 V, VGS = 20 V100nAVGS(th)Gate-to-Source Threshold VoltageVDS = VGS, ID = 250 A1.51.82.2VRDS(on)Drain-to-Source OnVGS = 4.5 V, ID = 100 A4.25.3mVGS = 10 V, ID = 100 A3.34.2mgsTranscond

11、uctanceVDS = 30 V, ID = 100 A187SDYNAMIC CHARACTERISTICSCissInput CapacitanceVGS = 0 V, VDS = 30 V, = 1 MHz39004680pFCossOutput Capacitance470564pFCrssReverse Transfer Capacitance1114pFRGSeries Gate1.32.6QgGate Charge Total (4.5 V)VDS = 30 V, ID = 100 A2125nCQgGate Charge Total (10 V)4453nCQgdGate C

12、harge Gate-to-Drain6.9nCQgsGate Charge Gate-to-Source10nCQg(th)Gate Charge at Vth7.3nCQossOutput ChargeVDS = 30 V, VGS = 0 V52nCtd(on)Turn On Delay TimeVDS = 30 V, VGS = 10 V, IDS = 100 A, RG = 0 7.8nstrRise Time5.3nstd(off)Turn Off Delay Time24.2nstFall Time5.6nsDIODE CHARACTERISTICSVSDDiode Forwar

13、d VoltageISD = 100 A, VGS = 0 V0.81VQrrReverse Recovery ChargeVDS= 30 V, IF = 100 A,di/dt = 300 A/s127nCtrrReverse Recovery Time57nsCSD18532KCSZHCSA49B AUGUST 2012 REVISED JULY 20145.3 Typical MOSFET Characteristics(TA = 25°C unless otherwise stated)4Copyright © 20122014, Texas Instruments

14、 IncorporatedIDS - Drain-to-Source Current (A)IDS - Drain-to-Source Current (A)120100806040200.511.5VDS - Drain-to-Source Voltage (V)G001Figure 2. Saturation Characteristics1401201008060402002345VGS - Gate-to-Source Voltage (V)G001Figure 3. Transfer CharacteristicsVDS = 5VTC = 125°C TC = 25

15、6;C TC = 55°CVGS =10V VGS =6.5V VGS =4.5VFigure 1. Transient Thermal ImpedanceCSD18532KCSZHCSA49B AUGUST 2012 REVISED JULY 2014Typical MOSFET Characteristics (continued)(TA = 25°C unless otherwise stated)1050000100008610004100201005101520253035404550G0010102030405060G001Qg - Gate Charge (n

16、C)VDS - Drain-to-Source Voltage (V)Figure 4. Gate ChargeFigure 5. Capacitance2.42.221.81.61.41.210.812ID = 250uA1086420.6075 50 25 025 50 75 100 125TC - Case Temperature (ºC)150 175200G00102468101214161820G001VGS - Gate-to- Source Voltage (V)Figure 6. Threshold Voltage vs TemperatureFigure 7. O

17、n-Statevs Gate-to-Source Voltage2.42.221.81.61.41.210.80.6100VGS = 4.5V VGS = 10VTC = 25°CTC = 125°C1010.10.010.001ID = 100A0.40.000175 50 25 025 50 75 100 125TC - Case Temperature (ºC)150175200G00100.20.40.60.81G001VSD Source-to-Drain Voltage (V)Figure 8. Normalized On-Statevs Temper

18、atureFigure 9. Typical Diode Forward Voltage5Copyright © 20122014, Texas Instruments IncorporatedNormalized On-StateVGS(th) - Threshold Voltage (V)VGS - Gate-to-Source Voltage (V)ISD Source-to-Drain Current (A)RDS(on) -(mOnW-State)C Capacitance (pF)TC = 25°C Id = 100A TC = 125ºC Id =

19、100ACiss = Cgd + Cgs Coss = Cds + Cgd Crss = CgdID = 100A VDS = 30VCSD18532KCSZHCSA49B AUGUST 2012 REVISED JULY 2014Typical MOSFET Characteristics (continued)(TA = 25°C unless otherwise stated)6© 20122014, Texas Instruments IncorporatedIDS - Drain-to-Source Current (A)IDS - Drain- to- Sour

20、ce Current (A)IAV - Peak Avalanche Current (A)500010001001010.10.1110100VDS - Drain-to-Source Voltage (V)G001Figure 10.um Safe Operating Area100100.010.11TAV - Time in Avalanche (mS)G001Figure 11. Single Pulse Unclamped Inductive Switching12010080604020050 250255075 100 125 150 175 200TC - Case Temp

21、erature (ºC)G001Figure 12.um Drain Current vs TemperatureTC = 25ºC TC = 125ºC10us1msDC100us10msSingle PulseMax RthetaJC = 0.6ºC/WCSD18532KCSZHCSA49B AUGUST 2012 REVISED JULY 20146 器件和文档支持6.1 商标NexFET is a trademark of Texas Instruments.6.2 静电放告这些装置包含有限的内置 ESD 保护。伤。导线一起截短或将装置放置于导电

22、泡棉中，以防止 MOS 门极或装卸时，静电损6.3 术语表SLYZ022 TI 术语表。这份术语表列出并解释术语、首字母缩略词和定义。7© 20122014, Texas Instruments IncorporatedCSD18532KCSZHCSA49B AUGUST 2012 REVISED JULY 20147机械数据以下页中包括机械封装和可订购信息。 这些信息是指定器件可提供的最新数据。 这些数据会在无通知且不对本文档进行修订的情况下发生改变。 欲获得该数据表的浏览器版本，请查阅左侧的导航栏。7.1KCS 封装注释：1.2.3.4.5.6.7.8.所有线性的均为英寸。本图纸

23、变更，恕不通知。引脚在“C”区域内不受.浸焊之前所有引脚均适用。中心引脚与零配件之间采用电气接触。“F”处的斜面是可选的“G”处的散热焊盘外形可采用这些“H”符合 JEDEC TO-220 变体 AB 标准（最小引脚厚度、最短外露焊盘长度和最大主体长度除外）。引脚配置8© 20122014, Texas Instruments Incorporated位置名称引脚 1栅极引脚 2 /漏引脚 3源重要德州仪器(TI) 及其下属子公司根据 JESD46 最新标准, 对所提供的和服务进行更正、修改、增强、改进或其它更改， 并根据JESD48 最新标准中止提供任何和服务。客户在下订单前应获取

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27、方案。尽管如此，此类组件仍然服从这些条款。TI 组件未获得用于 FDA Class III（或类似的生命攸关医疗设备）的，除非各方已经达成了专门管控此类使 用的特别协议。只有那些 TI 特别注明属于等级或“增强型”的 TI 组件才是设计或专门用于军事/航空应用或环境的。者认可并同 意，对并非指定面向军事或航空航天用途的 TI 组件进行军事或航空航天方面的应用，其风险由客户单独承担，并且由客户独 力负责满足与此类使用相关的所有法律和要求。TI 已明确指定符合 ISO/TS16949 要求的求，TI不承担任何责任。主要用于汽车。在任何情况下，因使用非指定而无法达到 ISO/TS16949 要，这些

28、应用数字音频放大器和线性器件数据转换器 DLP®DSP - 数字信号处理器时钟和计时器接口逻辑电源管理通信与电信 计算机及周边消费电子能源工业应用医疗电子安防应用和影像微器 (MCU)RFID 系统OMAP应用处理器无线连通性德州仪器技术支持社区邮寄地址： 上海市浦东新区世纪大道1568 号，中建32 楼： 200122Copyright © 2015, 德州仪器半导体技术（上海）PACKAGE OPTION ADDENDUM30-Apr-2016PACKAGING INFORMATION(1) The marketing status values are defined

29、 as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this par

30、t in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br)

31、- please check information and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.for the latest availabilityPb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS r

32、equirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exe

33、mption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mea

34、n Pb-Free (RoHS compat ble), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperat

35、ure.(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "" will appear on a d

36、evice. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device.(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Fi

37、nish values may wrap to two lines if the finishvalue exceeds theum column width.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third p

38、arties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructi

39、ve testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the

40、 total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.Addendum-Page 1Orderable DeviceStatus(1)Package TypePackage DrawingPinsPackage QtyEco Plan(2)Lead/Ball Finish(6)MSL Peak Temp(3)Op Temp (°C)Device Marking(4/5)SamplesCSD18532KCSACTIVETO-2

41、20KCS350Pb-Free (RoHS)CU SNN / A for Pkg Type-55 to 150CSD18532KCSPACKAGE OPTION ADDENDUM30-Apr-2016Addendum-Page 2PACKAGE OUTLINETO-220 - 19.65 mm max heightKCS0003BTO-220NOTES:1. All controlling linear dimensions are in inches. Dimensions in brackets are in millimeters. Any dimension in brackets o

42、r parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M.2. This drawing is subject to change without notice.3. Reference JEDEC registration TO-220.4.74.410.362.91.328.55 9.962.61.228.156.5(6.3)6.1( 3.84)12.512.19.2519.65 MAX9.053X3.9 MAX13.1212.70133X 0.900.47 0.770.342X2.

43、792.593X 1.36 1.234222214/A 10/20155.082.54EXAMPLLAYOUTKCS0003BTO-220 - 19.65 mm max heightTO-2200.07 MAX2X (1.7)ALL AROUND3X (1.2)M2X SOLDER MASK OPENING(1.7)1230.07 MAXR (0.05)(2.54)ALL AROUNDSOLDER MASK(5.08)OPENINGLAND PATTERN EXAMPLENON-SOLDER MASK DEFINED SCALE:15X4222214/A 10/2015重要德州仪器(TI) 及其下属子公司根据 JESD46 最新标准, 对所提供的和服务进行更正、修改、增强、改进或其它更改， 并根据JESD48 最新标准中止提供任何和服务。客户在下订单前应获取最新的相关信息, 并验证这些信息是否