spcs003技术解析英特尔非存储让可能性更不可思议

1、技术：英特尔非，让可能性更不可思议。Rob CrookeSenior Vice President and General Manager, Non-Volatile Memory Solutions GroupIntel CorporationSPCS003“ 理想情况下，您可能更想拥有一个无限大, 这样任何特定的 的信息将可以被立即获取. 这看上去是行不通的从物理层面去实现这样大的容量. 我们因此被迫认可这样一种的层次结构,可能性, 去构建一个其中每一层都比上一层的容量更加大速度会变低.”但是它的电子计算机装置逻辑结构初探和冯·诺依曼, 1946·,“ 理想情况下，您可

2、能更想拥有一个无限大, 这样任何特定的 的信息将可以被立即获取. 这看上去是行不通的从物理层面去实现这样大的容量. 我们因此被迫认可这样一种的层次结构,可能性, 去构建一个其中每一层都比上一层的容量更加大速度会变低.”但是它的电子计算机装置逻辑结构初探和冯·诺依曼, 1946·,的分层内存和在过去的 40 年 性能问题随着时间逐渐变大SRAM时延: 1X数据容量: 1XDRAM时延: 10X数据容量: 100XCPU 性能以介质为标准20K 次读耗时硬盘时延: 10 MillionX数据容量: 10,000X96980002040608Source: Intel Measu

3、rementsTechnology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.PerformanceMulticoreCPUCPUDISK的分层内存和在过去的 40 年 NAND 固态盘缓和了分层间的巨大性能落差SRAM时

4、延: 1X数据容量: 1XDRAM时延: 10X数据容量: 100XNAND 固态盘时延: 100,000X数据容量: 1,000X硬盘时延: 10 MillionX数据容量: 10,000XTechnology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Inte

5、l specifications.数据量的激增需要技术来进行最优化随机数据低队列深度和缓存行大小,业内很多人都在寻找“理想的”金融服务反科学研究技术驱动: NVM 引领者3D MLC 和TLC NAND固态盘替换传统机械硬盘的基石3oint和内存的基石超高性能3d nand 带来带来到这里从这里ü 更快 读写ü 增加 功效ü 改良的命等级 使 TLC 达到多种寿3D NAND2D NANDü 上佳的 数据完整性 - RBER,cycling, and retentionSource Intel datasheets. Comparing tProg an

6、d Tread for 20nm 2D NAND to 3D NAND gen. 13d nand 密度更高浮栅单元电荷捕获单元1Floating Gate cell 的空间占用最小高密度1阵列1更有效的利用CMOS 在阵列之下221Floating Gate has smaller overheadSource Intel measured data剖面More Gb/mm2阵列下的CMOS3D NAND 阵列上层金属3d nand 3D NAND 是基于已被证明的技术- 浮栅单元相关的物理学和材料学已非常成熟- 浮栅单元已经量产了四分之一个世纪 英特尔在半导体制程和生产上处于者地位-第一个

7、实现间距重覆, 第一个实现 3X 纳米, 第一个达到 2X 纳米, 第一个实现字线空隙, 第一个实现High-K工艺-我们深知如何让新技术实现快速量产一个全新种类的和内存3oint技术3oint 技术为追求大内存容量 按字 即刻获取 字(缓存行)交叉节点结构选择器支持高密封装的非介质的进步相容的转换和单元介质以及按位即刻获取高性能 的单元和阵列架构，可以令状态切换比Nand快1000倍¹大内存容量交叉& 可扩展性层可以以3D方式堆叠1Technology claims are based on comparisons of latency, density and write

8、 cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.3oint 技术SRAM时延: 1X数据容量: 1XDRAM时延: 10X数据容量: 100X3oint时延: 100X数据容量: 1,000XNAND时延: 100,000X数据容量: 1,000X硬盘时延: 10 MillionX数据容量: 10,000 XTechnology claims ar

9、e based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.NVMe 与3oint 技术Latency (uS),000固态盘 NAND 技术相对硬盘降低了100倍 时延125NVMe 消除了大约20 微秒的时延10075oint 技术降低了非的时延，相35

10、0对 NAND 固态盘时延大约减少了10倍25驱动器时延器时延软件时延0HDDSSD NANDSSD NAND SSD 3oint(例如. SAS HBA)+SAS/SATA+SAS/SATA+NVMe+NVMeSource Storage Technologies Group, IntelTechnology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications

11、of in-market memory products against internal Intel specifications.英特尔® Optane 技术范例NVMe 固态盘加上Optane 技术可以带来身临其境的，真正地无间断开放世界体验基于 3oint的所有固态盘形态M.2插卡式(AIC)U.2 2.5in.oint 技术3屏障内存SRAM时延: 1X数据容量: 1XDRAM时延: 10X数据容量: 100X3oint 时延: 100XNAND 固态盘时延: 100,000X数据容量: 1,000X数据容量: 1,000X硬盘时延: 10 MillionX数据容量: 10

12、,000 XTechnology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.INTEL DIMMsoint 技术基于 3Intel DIMM(基于 3oint技术) 同 DDR4 在电气及物理上兼容 支持下一代基于英特尔&

13、#174; 至强® 处理器的平台 提升高达4倍内存容量, 并相比 DRAM 显著降低成本 无需修改系统或者应用，就能获得大内存带来的好处未来至强®处理器DDR4 DIMM(作为回写缓存)新兴的非技术你会如何利用并发展？补充信息 您可通过IDF的技术课程目录此次课程的PDF文稿也可以在技术课程目录的首页。 Demos in the showcase Kiosk #426 and #428. Intel® Optane Technology SSD Prototype Demonstration; Dual Port NVMe* for High Availabili

14、ty Storage Architecture Technology Demonstration. More web based info: Additional info for Ceph commu19Other technical sessionsSession IDTitleDayTimeRoomSSDS001Delivering Cost-Effective, High Performance Storage Solutions with Todays NVM Express* Solid State Drives and Tomorrows Intel® Optane T

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