【《微型压电超声换能器概述》1600字】

微型压电超声换能器概述压电材料具有很好的动态特性，因此适用于声学和超声应用。典型的声学和超声换能器包括麦克风、声学显微镜、超声医学成像、无损检测、水下通讯和气体探测等。超声马达和液滴注射器是典型的超声驱动器ADDINEN.CITEADDINEN.CITE.DATA[\o"Safari,2008#220"52-54]。同种类的压电换能器已经被设计出来满足不同的技术需求。工作在极低频率下（低于200Hz）的换能器可用来对空气和水流进行传感。工作在声波频率范围内（低于20kHz）的换能器可用作扬声器和麦克风。高于20kHz，即为超声频率。工作在超声频率范围的换能器被广泛用于成像。在频率达到GHz量级时，薄膜声波谐振器作为射频过滤器被广泛用于通讯仪器ADDINEN.CITE<EndNote><Cite><Author>Park</Author><Year>2004</Year><RecNum>223</RecNum><DisplayText><styleface="superscript">[55]</style></DisplayText><record><rec-number>223</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">223</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Park,Young</author><author>Kim,EUNGKWON</author><author>Lee,TaeYong</author><author>Song,JoonTae</author></authors></contributors><titles><title>ThemodelingandfabricatingoffilmbulkacousticresonatorsusingsputteredPZTfilmswithvariousthickness</title><secondary-title>IntegratedFerroelectrics</secondary-title></titles><periodical><full-title>IntegratedFerroelectrics</full-title></periodical><pages>187-194</pages><volume>66</volume><number>1</number><dates><year>2004</year></dates><isbn>1058-4587</isbn><urls></urls></record></Cite></EndNote>[\o"Park,2004#223"55]。超声换能器技术和MEMS技术的结合就产生了微机械超声换能器（MUTs）。和传统的超声换能器设计相比，MUTs具有如设计小巧紧凑和易于与电子器件集成等优势。MUT包含压电MUTs（p-MUTs）和电容MUTs（c-MUTs）两种ADDINEN.CITE<EndNote><Cite><Author>Chao</Author><Year>2007</Year><RecNum>225</RecNum><DisplayText><styleface="superscript">[56,57]</style></DisplayText><record><rec-number>225</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">225</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Chao,Wang</author><author>Wang,Zheyao</author><author>Ren,TianLing</author><author>Zhu,Yiping</author><author>Yi,Yang</author><author>Wu,Xiaoming</author><author>Wang,Haining</author><author>Fang,Huajun</author><author>Liu,Litian</author></authors></contributors><titles><title>AMicromachinedPiezoelectricUltrasonicTransducerOperatingind33ModeUsingSquareInterdigitalElectrodes</title><secondary-title>IEEESensorsJournal</secondary-title></titles><periodical><full-title>IEEESensorsJournal</full-title></periodical><pages>967-976</pages><volume>7</volume><number>7</number><dates><year>2007</year></dates><urls></urls></record></Cite><Cite><Author>Wang</Author><Year>2006</Year><RecNum>226</RecNum><record><rec-number>226</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">226</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Zhu,Weiguang</author><author>Miao,Jianmin</author><author>Zhu,Hong</author><author>Chao,Chen</author><author>Tan,OoiKiang</author></authors></contributors><titles><title>Micromachinedthickfilmpiezoelectricultrasonictransducerarray</title><secondary-title>SensorsandActuatorsA:Physical</secondary-title></titles><periodical><full-title>SensorsandActuatorsA:Physical</full-title></periodical><pages>485-490</pages><volume>130</volume><dates><year>2006</year></dates><isbn>0924-4247</isbn><urls></urls></record></Cite></EndNote>[\o"Chao,2007#225"56,\o"Wang,2006#226"57]。最广泛使用的p-MUT结构是将一个压电层附着在一个绝缘层上，p-MUT工作在弯曲状态下。当沿着压电层的厚度方向施加一个电场时能够使压电层产生一个横向的变形，最终使得结构弯曲并在所接触的介质中产生传播的声压。如果有声波冲击在薄膜表面，就会导致薄膜的弯曲位移从而产生极化电荷。尽管c-MUT的耦合系数要高于p-MUT，但是c-MUT必须是封闭结构，以便保证对底部电极的分配。而p-MUT则可以采用开口结构，因此对于p-MUT来说没有位移幅度的限制。p-MUT器件能比c-MUT器件产生更大的振幅，因此也就能够产生更高的声学能量输出。单个的换能器器件通常只能产生固定焦距的波束，这意味着器件只在焦距范围内的某一点上具有最佳的空间分辨率，这个问题可以通过采用换能器阵列来解决。WangADDINEN.CITE<EndNote><Cite><Author>Wang</Author><Year>2006</Year><RecNum>226</RecNum><DisplayText><styleface="superscript">[57]</style></DisplayText><record><rec-number>226</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">226</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Zhu,Weiguang</author><author>Miao,Jianmin</author><author>Zhu,Hong</author><author>Chao,Chen</author><author>Tan,OoiKiang</author></authors></contributors><titles><title>Micromachinedthickfilmpiezoelectricultrasonictransducerarray</title><secondary-title>SensorsandActuatorsA:Physical</secondary-title></titles><periodical><full-title>SensorsandActuatorsA:Physical</full-title></periodical><pages>485-490</pages><volume>130</volume><dates><year>2006</year></dates><isbn>0924-4247</isbn><urls></urls></record></Cite></EndNote>[\o"Wang,2006#226"57]等提出了一种基于压电厚膜的二维超声换能器阵列。厚膜材料是一种基于化学溶液沉积和高能球磨粉末的复合材料。该膜涂覆在具有绝缘层的硅（SOI）晶片上，背面的孔由湿法刻蚀出来，如REF_Ref65749468\h图1-2所示。该换能器在20V的偏置电压的作用下能够输出117dB的声压级，并且对该换能器阵列的方向性进行了测试ADDINEN.CITE<EndNote><Cite><Author>Wang</Author><Year>2008</Year><RecNum>397</RecNum><DisplayText><styleface="superscript">[58,59]</style></DisplayText><record><rec-number>397</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">397</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Miao,Jianmin</author><author>Zhu,Weiguang</author></authors></contributors><titles><title>Micromachinedultrasonictransducersandarraysbasedonpiezoelectricthickfilm</title><secondary-title>AppliedPhysicsA</secondary-title></titles><periodical><full-title>AppliedPhysicsA</full-title></periodical><pages>107-117</pages><volume>91</volume><number>1</number><dates><year>2008</year></dates><urls></urls></record></Cite><Cite><Author>Wang</Author><Year>2005</Year><RecNum>227</RecNum><record><rec-number>227</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">227</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Zhu,Weiguang</author><author>Zhu,Hong</author><author>Miao,Jianmin</author><author>Chao,Chen</author><author>Zhao,Changlei</author><author>Tan,OoiKiang</author></authors></contributors><titles><title>FabricationandcharacterizationofpiezoelectricmicromachinedultrasonictransducerswiththickcompositePZTfilms</title><secondary-title>IEEEtransactionsonultrasonics,ferroelectrics,andfrequencycontrol</secondary-title></titles><periodical><full-title>IEEEtransactionsonultrasonics,ferroelectrics,andfrequencycontrol</full-title></periodical><pages>2289-2297</pages><volume>52</volume><number>12</number><dates><year>2005</year></dates><isbn>0885-3010</isbn><urls></urls></record></Cite></EndNote>[\o"Wang,2008#397"58,\o"Wang,2005#227"59]。a)多层结构膜片式p-MUT的示意图ADDINEN.CITE<EndNote><Cite><Author>Wang</Author><Year>2006</Year><RecNum>226</RecNum><DisplayText><styleface="superscript">[57]</style></DisplayText><record><rec-number>226</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">226</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Zhu,Weiguang</author><author>Miao,Jianmin</author><author>Zhu,Hong</author><author>Chao,Chen</author><author>Tan,OoiKiang</author></authors></contributors><titles><title>Micromachinedthickfilmpiezoelectricultrasonictransducerarray</title><secondary-title>SensorsandActuatorsA:Physical</secondary-title></titles><periodical><full-title>SensorsandActuatorsA:Physical</full-title></periodical><pages>485-490</pages><volume>130</volume><dates><year>2006</year></dates><isbn>0924-4247</isbn><urls></urls></record></Cite></EndNote>[\o"Wang,2006#226"57]a)Schematicofamembrane-typep-MUTADDINEN.CITE<EndNote><Cite><Author>Wang</Author><Year>2006</Year><RecNum>226</RecNum><DisplayText><styleface="superscript">[57]</style></DisplayText><record><rec-number>226</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">226</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Zhu,Weiguang</author><author>Miao,Jianmin</author><author>Zhu,Hong</author><author>Chao,Chen</author><author>Tan,OoiKiang</author></authors></contributors><titles><title>Micromachinedthickfilmpiezoelectricultrasonictransducerarray</title><secondary-title>SensorsandActuatorsA:Physical</secondary-title></titles><periodical><full-title>SensorsandActuatorsA:Physical</full-title></periodical><pages>485-490</pages><volume>130</volume><dates><year>2006</year></dates><isbn>0924-4247</isbn><urls></urls></record></Cite></EndNote>[\o"Wang,2006#226"57]b)p-MUT的扫描电镜截面图ADDINEN.CITE<EndNote><Cite><Author>Wang</Author><Year>2008</Year><RecNum>397</RecNum><DisplayText><styleface="superscript">[58]</style></DisplayText><record><rec-number>397</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">397</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Miao,Jianmin</author><author>Zhu,Weiguang</author></authors></contributors><titles><title>Micromachinedultrasonictransducersandarraysbasedonpiezoelectricthickfilm</title><secondary-title>AppliedPhysicsA</secondary-title></titles><periodical><full-title>AppliedPhysicsA</full-title></periodical><pages>107-117</pages><volume>91</volume><number>1</number><dates><year>2008</year></dates><urls></urls></record></Cite></EndNote>[\o"Wang,2008#397"58]b)SEMcrosssectionimageofap-MUTADDINEN.CITE<EndNote><Cite><Author>Wang</Author><Year>2008</Year><RecNum>397</RecNum><DisplayText><styleface="superscript">[58]</style></DisplayText><record><rec-number>397</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">397</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Miao,Jianmin</author><author>Zhu,Weiguang</author></authors></contributors><titles><title>Micromachinedultrasonictransducersandarraysbasedonpiezoelectricthickfilm</title><secondary-title>AppliedPhysicsA</secondary-title></titles><periodical><full-title>AppliedPhysicsA</full-title></periodical><pages>107-117</pages><volume>91</volume><number>1</number><dates><year>2008</year></dates><urls></urls></record></Cite></EndNote>[\o"Wang,2008#397"58]图1-SEQ图1-\*ARABIC2多层结构膜片式结构微型压电超声换能器Fig.1-SEQFig.1-\*ARABIC2Diaphragm-typep-MUTofmultilayerstructureWangADDINEN.CITE<EndNote><Cite><Author>Wang</Author><Year>2009</Year><RecNum>398</RecNum><DisplayText><styleface="superscript">[60]</style></DisplayText><record><rec-number>398</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">398</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Miao,Jianmin</author><author>Tan,CheeWee</author></authors></contributors><titles><title>AcoustictransducerswithaperforateddampingbackplatebasedonPZT/siliconwaferbondingtechnique</title><secondary-title>Sensors&ActuatorsAPhysical</secondary-title></titles><periodical><full-title>Sensors&ActuatorsAPhysical</full-title></periodical><pages>277-283</pages><volume>149</volume><number>2</number><dates><year>2009</year></dates><urls></urls></record></Cite></EndNote>[\o"Wang,2009#398"60]等使用一种聚合物材料将PZT体材料和SOI晶片粘接在一起，并采用了化学机械抛光（CMP）的方法将PZT体材料减薄至厚层量级，厚度低于20μm。通过连接一个如REF_Ref65753257\h图1-3所示的具有优化分布槽和孔的硅背板，膜片的阻尼系数得到增加，换能器的频率响应变得扁平。a)具有阻尼背板优化的p-MUT的示意图ADDINEN.CITE<EndNote><Cite><Author>Wang</Author><Year>2009</Year><RecNum>398</RecNum><DisplayText><styleface="superscript">[60]</style></DisplayText><record><rec-number>398</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">398</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Miao,Jianmin</author><author>Tan,CheeWee</author></authors></contributors><titles><title>AcoustictransducerswithaperforateddampingbackplatebasedonPZT/siliconwaferbondingtechnique</title><secondary-title>Sensors&ActuatorsAPhysical</secondary-title></titles><periodical><full-title>Sensors&ActuatorsAPhysical</full-title></periodical><pages>277-283</pages><volume>149</volume><number>2</number><dates><year>2009</year></dates><urls></urls></record></Cite></EndNote>[\o"Wang,2009#398"60]a)Schematicofap-MUTwithadampingbackplateADDINEN.CITE<EndNote><Cite><Author>Wang</Author><Year>2009</Year><RecNum>398</RecNum><DisplayText><styleface="superscript">[60]</style></DisplayText><record><rec-number>398</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">398</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Miao,Jianmin</author><author>Tan,CheeWee</author></authors></contributors><titles><title>AcoustictransducerswithaperforateddampingbackplatebasedonPZT/siliconwaferbondingtechnique</title><secondary-title>Sensors&ActuatorsAPhysical</secondary-title></titles><periodical><full-title>Sensors&ActuatorsAPhysical</full-title></periodical><pages>277-283</pages><volume>149</volume><number>2</number><dates><year>2009</year></dates><urls></urls></record></Cite></EndNote>[\o"Wang,2009#398"60]b)切割后的单个换能器ADDINEN.CITE<EndNote><Cite><Author>Wang</Author><Year>2009</Year><RecNum>398</RecNum><DisplayText><styleface="superscript">[60]</style></DisplayText><record><rec-number>398</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">398</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Miao,Jianmin</author><author>Tan,CheeWee</author></authors></contributors><titles><title>AcoustictransducerswithaperforateddampingbackplatebasedonPZT/siliconwaferbondingtechnique</title><secondary-title>Sensors&ActuatorsAPhysical</secondary-title></titles><periodical><full-title>Sensors&ActuatorsAPhysical</full-title></periodical><pages>277-283</pages><volume>149</volume><number>2</number><dates><year>2009</year></dates><urls></urls></record></Cite></EndNote>[\o"Wang,2009#398"60]b)Singlep-MUTafterdicingADDINEN.CITE<EndNote><Cite><Author>Wang</Author><Year>2009</Year><RecNum>398</RecNum><DisplayText><styleface="superscript">[60]</style></DisplayText><record><rec-number>398</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">398</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Wang,Zhihong</author><author>Miao,Jianmin</author><author>Tan,CheeWee</author></authors></contributors><titles><title>AcoustictransducerswithaperforateddampingbackplatebasedonPZT/siliconwaferbondingtechnique</title><secondary-title>Sensors&ActuatorsAPhysical</secondary-title></titles><periodical><full-title>Sensors&ActuatorsAPhysical</full-title></periodical><pages>277-283</pages><volume>149</volume><number>2</number><dates><year>2009</year></dates><urls></urls></record></Cite></EndNote>[\o"Wang,2009#398"60]图1-SEQ图1-\*ARABIC3具有阻尼背板优化的多层结构膜片式微型声学换能器Fig.1-SEQFig.1-\*ARABIC3Diaphragm-typeacoustictransducerofmultilayerstructurewithadampingbackplateWang和Wu等提出了一种方形薄层结构的p-MUTADDINEN.CITE<EndNote><Cite><Author>Chao</Author><Year>2007</Year><RecNum>225</RecNum><DisplayText><styleface="superscript">[56]</style></DisplayText><record><rec-number>225</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">225</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Chao,Wang</author><author>Wang,Zheyao</author><author>Ren,TianLing</author><author>Zhu,Yiping</author><author>Yi,Yang</author><author>Wu,Xiaoming</author><author>Wang,Haining</author><author>Fang,Huajun</author><author>Liu,Litian</author></authors></contributors><titles><title>AMicromachinedPiezoelectricUltrasonicTransducerOperatingind33ModeUsingSquareInterdigitalElectrodes</title><secondary-title>IEEESensorsJournal</secondary-title></titles><periodical><full-title>IEEESensorsJournal</full-title></periodical><pages>967-976</pages><volume>7</volume><number>7</number><dates><year>2007</year></dates><urls></urls></record></Cite></EndNote>[\o"Chao,2007#225"56]。通过采用如REF_Ref65754052\h图1-4所示的方形叉指电极来实现d33模式的振动。仿真结果表明，应力在方形膜片的侧长度的大约70%处改变其符号。活性电极不应覆盖膜片的整个区域。否则，在内部和外部部分的感应电荷将部分中和，将降低p-MUT的接收灵敏度。NakajimaADDINEN.CITE<EndNote><Cite><Author>Nakajima</Author><Year>2017</Year><RecNum>230</RecNum><DisplayText><styleface="superscript">[61]</style></DisplayText><record><rec-number>230</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">230</key></foreign-keys><ref-typename="ConferenceProceedings">10</ref-type><contributors><authors><author>Nakajima,Shota</author><author>Shiomi,Jo</author><author>Yamashita,Kaoru</author><author>Noda,Minoru</author></authors></contributors><titles><title>SensitivityofpiezoelectricMEMSultrasonicsensorsusingsol-gelPZTfilmspreparedthroughvariouspyrolysistemperatures</title><secondary-title>2017IEEEInternationalMeetingforFutureofElectronDevices,Kansai(IMFEDK)</secondary-title></titles><pages>108-109</pages><dates><year>2017</year></dates><publisher>IEEE</publisher><isbn>1509039929</isbn><urls></urls></record></Cite></EndNote>[\o"Nakajima,2017#230"61]等采用溶胶-凝胶法制备了PZT薄膜如REF_Ref65754346\h图1-5所示。他们研究了压电超声换能器在不同热解条件下的灵敏度。在薄膜片结构上制作换能器，其屈曲形变对灵敏度有很大的影响，屈曲形变受PZT薄膜应力所控制。在250℃-400℃范围内，溶胶-凝胶过程中的热解温度不同，在晶片上制备的PZT薄膜在结晶取向和应力方面进行了评价。然后在晶片上制作了传感器结构，并对传感器的屈曲挠度和灵敏度进行了评估。薄膜的应力随着热解温度的升高而降低。优选的结晶取向从（111）到（100）在低于400℃和400℃的热解温度之间转换。400℃热解PZT的传感器具有比在较低温度下热解的PZT更大的屈曲挠曲和更高的灵敏度。图1-SEQ图1-\*ARABIC4方形叉指电极面内极化p-MUT示意图ADDINEN.CITE<EndNote><Cite><Author>Chao</Author><Year>2007</Year><RecNum>225</RecNum><DisplayText><styleface="superscript">[56]</style></DisplayText><record><rec-number>225</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">225</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Chao,Wang</author><author>Wang,Zheyao</author><author>Ren,TianLing</author><author>Zhu,Yiping</author><author>Yi,Yang</author><author>Wu,Xiaoming</author><author>Wang,Haining</author><author>Fang,Huajun</author><author>Liu,Litian</author></authors></contributors><titles><title>AMicromachinedPiezoelectricUltrasonicTransducerOperatingind33ModeUsingSquareInterdigitalElectrodes</title><secondary-title>IEEESensorsJournal</secondary-title></titles><periodical><full-title>IEEESensorsJournal</full-title></periodical><pages>967-976</pages><volume>7</volume><number>7</number><dates><year>2007</year></dates><urls></urls></record></Cite></EndNote>[\o"Chao,2007#225"56]Fig.1-SEQFig.1-\*ARABIC4Schematicofp-MUTusinginterdigitatedelectrodesforin-planepolingADDINEN.CITE<EndNote><Cite><Author>Chao</Author><Year>2007</Year><RecNum>225</RecNum><DisplayText><styleface="superscript">[56]</style></DisplayText><record><rec-number>225</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">225</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Chao,Wang</author><author>Wang,Zheyao</author><author>Ren,TianLing</author><author>Zhu,Yiping</author><author>Yi,Yang</author><author>Wu,Xiaoming</author><author>Wang,Haining</author><author>Fang,Huajun</author><author>Liu,Litian</author></authors></contributors><titles><title>AMicromachinedPiezoelectricUltrasonicTransducerOperatingind33ModeUsingSquareInterdigitalElectrodes</title><secondary-title>IEEESensorsJournal</secondary-title></titles><periodical><full-title>IEEESensorsJournal</full-title></periodical><pages>967-976</pages><volume>7</volume><number>7</number><dates><year>2007</year></dates><urls></urls></record></Cite></EndNote>[\o"Chao,2007#225"56]图1-SEQ图1-\*ARABIC5溶胶-凝胶法制备的压电薄膜换能器ADDINEN.CITE<EndNote><Cite><Author>Nakajima</Author><Year>2017</Year><RecNum>230</RecNum><DisplayText><styleface="superscript">[61]</style></DisplayText><record><rec-number>230</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">230</key></foreign-keys><ref-typename="ConferenceProceedings">10</ref-type><contributors><authors><author>Nakajima,Shota</author><author>Shiomi,Jo</author><author>Yamashita,Kaoru</author><author>Noda,Minoru</author></authors></contributors><titles><title>SensitivityofpiezoelectricMEMSultrasonicsensorsusingsol-gelPZTfilmspreparedthroughvariouspyrolysistemperatures</title><secondary-title>2017IEEEInternationalMeetingforFutureofElectronDevices,Kansai(IMFEDK)</secondary-title></titles><pages>108-109</pages><dates><year>2017</year></dates><publisher>IEEE</publisher><isbn>1509039929</isbn><urls></urls></record></Cite></EndNote>[\o"Nakajima,2017#230"61]Fig.1-SEQFig.1-\*ARABIC5Sol-gelfabricatedPZTthinfilmtransducerADDINEN.CITE<EndNote><Cite><Author>Nakajima</Author><Year>2017</Year><RecNum>230</RecNum><DisplayText><styleface="superscript">[61]</style></DisplayText><record><rec-number>230</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">230</key></foreign-keys><ref-typename="ConferenceProceedings">10</ref-type><contributors><authors><author>Nakajima,Shota</author><author>Shiomi,Jo</author><author>Yamashita,Kaoru</author><author>Noda,Minoru</author></authors></contributors><titles><title>SensitivityofpiezoelectricMEMSultrasonicsensorsusingsol-gelPZTfilmspreparedthroughvariouspyrolysistemperatures</title><secondary-title>2017IEEEInternationalMeetingforFutureofElectronDevices,Kansai(IMFEDK)</secondary-title></titles><pages>108-109</pages><dates><year>2017</year></dates><publisher>IEEE</publisher><isbn>1509039929</isbn><urls></urls></record></Cite></EndNote>[\o"Nakajima,2017#230"61]此外，QiuADDINEN.CITE<EndNote><Cite><Author>Qiu</Author><Year>2015</Year><RecNum>231</RecNum><DisplayText><styleface="superscript">[62]</style></DisplayText><record><rec-number>231</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">231</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Qiu,Yongqiang</author><author>Gigliotti,James</author><author>Wallace,Margeaux</author><author>Griggio,Flavio</author><author>Demore,Christine</author><author>Cochran,Sandy</author><author>Trolier-McKinstry,Susan</author></authors></contributors><titles><title>Piezoelectricmicromachinedultrasoundtransducer(PMUT)arraysforintegratedsensing,actuationandimaging</title><secondary-title>Sensors</secondary-title></titles><periodical><full-title>Sensors(Basel)</full-title><abbr-1>Sensors</abbr-1></periodical><pages>8020-8041</pages><volume>15</volume><number>4</number><dates><year>2015</year></dates><urls></urls></record></Cite></EndNote>[\o"Qiu,2015#231"62]等提出了一种基于PZT薄层膜结构的超声换能器，JungADDINEN.CITE<EndNote><Cite><Author>Jung</Author><Year>2017</Year><RecNum>232</RecNum><DisplayText><styleface="superscript">[63]</style></DisplayText><record><rec-number>232</rec-number><foreign-keys><keyapp="EN"db-id="s9ex25exrf2923ef9pb5dve9swewd9rzp2r2">232</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Jung,Joontaek</author><author>Annapureddy,Venkateswarlu</author><author>Hwang,Geon-Tae</author><author>Song,Youngsup</author><author>Lee,Wonjun</author><author>Kang,Woojin</author><author>Ryu,Jungho</author><author>Choi,Hongsoo</author></authors></contributors><titles><title>31-modepiezoelectricmicromachinedultrasonictransducerwithPZTthickfilmbygranulesprayinginvacuumprocess</title><secondary-title>AppliedPhysicsLetters</secondary-title></titles><periodical><full-title>Appliedphysicsletters</full-title></periodical><pages>212903</pages><volume>110</volume><number>21</number><dates><year>2017</year></dates><isbn>0003-6951</isbn><urls></urls></record></Cite></EndNote>[\o"Jung,2017#232"63]等提出了基于PZT厚层膜结构的超声换能器。还有利用AlN材料来制作微型压电超声换能器的，其结构主要也是膜结构，如LuADDINEN.CITE<EndNote><Cite><Author>Lu</Author><Year>2015</Year><RecNum>233</RecNum><DisplayText><styleface="superscript">[64]</style></Di