基于人文价值的旅游小镇设计研究

ITO薄膜晶体管辅助层的文献调研

薄膜晶体管与先进显示技术实验室姓名：刘洋学号：1101213713研究小组：TFT一组ThinFilmTransistorandAdvancedDisplayLab组会汇报文献调研实验进展下一步实验计划汇报内容文献调研实验进展下一步研究计划文献调研背景目前在实验室制备的ITOTFT器件中，迁移率不高~10cm2/vs，且有源层厚度在10nm左右，厚度太薄易产生其他问题，如不同区域器件特性不均匀，实验可重复性差；另一方面，实验证实IGZO作为辅助层的ITOTFT迁移率有所提高，因此希望找到其他的辅助层材料实现调节阈值电压，提高迁移率的作用，比如ZTO。图1ITOTFTId-Vg转移特性图图2ITO/IGZOTFTId-Vg转移特性图文献调研实验进展下一步研究计划文献调研一器件结构：Bottomgatestructure工艺流程：Mo栅SiO2栅介质：PECVD380℃，120nmITO层：O2/[Ar+O2]=44%，0.26Pa，DCpowerdensity2.2W/cm2ZTO层：~Zn:Sn=70:30，magnetronsputterTheactiveareawasdefinedusingashadowmaskduringdepositionoftheZTO/ITOfilm.(W/L=1000μm/15μm)ITO源/漏：DCsputter

退火：空气中1h500℃Ji-InKim,K.H.Ji,H.Y.Jung,etc,”ImprovementinbothmobilityandbiasstabilityofZnSnOtransistorsbyinsertingultra-thinInSnOlayeratthegateinsulator/channelinterface”,AppliedPhysicLetters99,122102(2011).文献调研实验进展下一步研究计划文献调研一FIG.3.(Coloronline)Evolutionofthetransfercharacteristicsofthe(a)ZTOand(b)ZTO/ITO(3.5nm)devicesasafunctionofthenegativebiasstress(-BS)time,and(c)ZTOand(d)ZTO/ITO(3.5nm)devicesasafunctionofthepositivebiasstress(+BS)time“TheinterfacialITOlayernotonlyprovidesafastcarrierpathbutalsoreducestheinterfacialtrapdensity.”Ji-InKim,K.H.Ji,H.Y.Jung,etc,”ImprovementinbothmobilityandbiasstabilityofZnSnOtransistorsbyinsertingultra-thinInSnOlayeratthegateinsulator/channelinterface”,AppliedPhysicLetters99,122102(2011).文献调研实验进展下一步研究计划文献调研一FIG.4.(Coloronline)(a)The+BSand-BS-inducedVthvariationsfortheZTO/ITOdeviceswithincreasingts.TheevolutionoftheVthvariationsforthe(b)referenceand(c)optimalbi-layerdevicesunderthermalstressfrom298to378K.(d)EAasafunctionofVGSforthereferenceandZTO/ITO(3.5nm)devices.Ji-InKim,K.H.Ji,H.Y.Jung,etc,”ImprovementinbothmobilityandbiasstabilityofZnSnOtransistorsbyinsertingultra-thinInSnOlayeratthegateinsulator/channelinterface”,AppliedPhysicLetters99,122102(2011).ThenegativeVthshiftwithincreasingmeasurementtemperaturewasattributedtothegenerationofthermallyactivatedcarriersfromthetrapstatesatthegateinsulator/channelorinthebandgapofZTO.Thefallingratesoftheactivationenergy(EA)were0.376eV/Vand0.602eV/VfortheZTOandoptimalbi-layerdevices,respectively.ThefasterfallingrateoftheZTO/ITO(3.5nm)devicessuggeststhattheinterfacialtrapdensity(Dit)canbedecreasedbytheinsertionofaverythinITOfilmintotheZTO/SiO2referencedevice.Thisinterpretationisinlinewiththesuperiormobilityandreliabilityforthisdevice.文献调研实验进展下一步研究计划文献调研二器件结构：Bottomgatestructure工艺流程：C-Si衬底/栅SiO2栅介质：PECVD390℃，120nmITO/ZTO层：DC/RFmagnetronsputterAl源/漏：电子束蒸发，200nmAllthepatterningprocesseswereperformedusingashadowmaskduringdeposition.

退火：125℃H.Wakana,T.Kawamura,K.Fujii,etc,”AmorphousZTO/ITOStacked-ChannelTFTswithFieldEffectMobilityover50cm2/VsandResistanttoChannelThicknessDispersion”,SIDSymposiumDigestofTechnicalPapersVolume41,Issue1,pages1287–1290,(2010).Fig5.Schematiccross-sectionoftheTFTstructurewithZTO/ITOchannellayer(a),andtopviewofaunitTFT.Fig6.CrosssectionalTEMimageoftheTFTwithZTO/ITOchannellayer.文献调研实验进展下一步研究计划文献调研二H.Wakana,T.Kawamura,K.Fujii,etc,”AmorphousZTO/ITOStacked-ChannelTFTswithFieldEffectMobilityover50cm2/VsandResistanttoChannelThicknessDispersion”,SIDSymposiumDigestofTechnicalPapersVolume41,Issue1,pages1287–1290,(2010).Fig7.TransfercharacteristicsofTFTswithvariouschannelmaterialsincluding(a)IGZO(25nm),(b)ZTO(25nm),(c)ITO(5nm),and(d)ZTO(50nm)/ITO(5nm).文献调研实验进展下一步研究计划文献调研二H.Wakana,T.Kawamura,K.Fujii,etc,”AmorphousZTO/ITOStacked-ChannelTFTswithFieldEffectMobilityover50cm2/VsandResistanttoChannelThicknessDispersion”,SIDSymposiumDigestofTechnicalPapersVolume41,Issue1,pages1287–1290,(2010).Fig8.ThevariationsofVthandIonoftheZTO(50nm)/ITOTFTsasafunctionoftheITOthickness.Fig9.ThevariationsofVthandIonoftheZTO/ITO(5nm)TFTsasafunctionoftheZTOthickness.AtaZTOthicknessof75nm,theIonoftheTFTsdecreased.ThisisbecausetheresistancebetweenthechargeconductancechannelandtheAlelectrodeincreasedwithanincreaseintheZTOchannelthickness.Inotherwords,theZTOlayeractsassuppressionlayerfortheVthdispersion.IfoxygenandzincarediffusedintheITOlayerduringtheZTOdeposition,theyaresupposedtosuppressthecarrierintheITOlayer.文献调研实验进展下一步研究计划文献调研总结ZTO作为辅助层的优点：1、与IGZO相比，无In元素，成本更低；2、非晶态，且在较高温度下退火依旧是非晶；3、潜在的优点，如文献描述，正负偏压下阈值电压漂移更小，有源层厚度对

阈值电压影响更小等。文献调研实验进展下一步研究计划实验进展新溅射台制备不同厚度有源层的ITOTFT：工艺条件：Mo栅：DC溅射功率200W，0.36Pa，Ar:O2=50:0，8E-4；Al2O3栅介质：RF溅射功率300W，0.9Pa，Ar:O2=100:30，6E-4；ITO有源层：RF溅射功率80W，Ar:O2=35:5，1.0Pa，6E-4，