savin1芯片手册tlp521-2

1、TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4 TLP521XGB, TLP521-2XGB, TLP521-4XGBTLP521X, TLP521-2X, TLP521-4XHIGH DENSITY MOUNTING PHOTOTRANSISTOROPTICALLY COUPLEDISOLATORS7/4/03DB92546m-AAS/A3ISOCOM INC1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USATel: (214) 495-0755 Fax: (2

2、14) 495-0901e-mail ISOCOM COMPONENTS LTDUnit 25B, Park View Road West, Park View Industrial Estate, Brenda RoadHartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581APPROVALS ULrecognised, File No. E91231X SPECIFICATION APPROVALS VDE 0884 in 3 avai

3、lable lead form: - STD- G form- SMD approved to CECC 00802 BSI approved - Certificate No. 8001DESCRIPTIONThe TLP521, TLP521-2, TLP521-4 series ofoptically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages.FE

4、ATURES Options :-10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. High Current Transfer Ratio ( 50% min) High Isolation Voltage (5.3kVRMS ,7.5kVPK ) High BVCEO ( 55Vmin ) All electrical parameters 100% tested Custom electrical selecti

5、onsavailableAPPLICATIONS Computer terminals Industrial systems controllers Measuring instruments Signal transmission between systems of different potentials and impedancesTLP5212.54Dimensions in mm7.0146.0231.25.087.6213 0.5Max3.0TLP521-20.53.352.5418277.0366.0451.2 10.16 7.624.03.0 0.5133.0Max3.35

6、0.260.5116TLP521-42153142.544135127.06116.07101.28920.32 7.6219.324.03.00.513Max0.5 3.350.26OPTION SMOPTION GSURFACE MOUNT 7.60.750.2610.4610.169.869.160.264.084.03.0ABSOLUTE MAXIMUM RATINGS(25C unless otherwise specified)INPUT DIODEOUTPUT TRANSISTORPOWER DISSIPATIONELECTRICAL CHARACTERIS

7、TICS ( TA = 25C Unless otherwise noted )Note 1Note 2Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.DB92546m-AAS/A37/4/03PARAMETERMINTYPMAXUNITSTEST CONDITIONInputForward Voltage (VF)Reverse Current

8、 (IR)1.01.151.310VmAIF = 10mAVR = 4VOutputCollector-emitter Breakdown (BVCEO)( Note 2 )Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO)556100VVnAIC = 0.5mA I = 100mAEVCE = 20VCoupledCurrent Transfer Ratio (CTR) (Note 2) TLP521, TLP521-2, TLP521-4CTR selection availableBLGB G

9、BCollector-emitter Saturation VoltageVCE(SAT)-GBInput to Output Isolation Voltage VISOInput-output Isolation Resistance RISO Response Time (Rise), trResponse Time (Fall), tf5020010030530075005x1010436006006000.40.4%V VVRMSVPKWmsms5mA IF , 5V VCE1mA IF , 0.4V VCE8mA IF , 2.4mA IC1mA IF , 0.2mA ICSee

10、note 1See note 1VIO = 500V (note 1) VCE = 2V ,I = 2mA, R = 100WCLTotal Power Dissipation 200mW(derate linearly 2.67mW/C above 25C)Collector-emitter Voltage BVCEO55V Emitter-collector Voltage BVECO6V Power Dissipation 150mWForward Current 50mA Reverse Voltage 6V Power Dissipation 70mWStorage Temperat

11、ure -55C to + 125C Operating Temperature -30C to + 100C Lead Soldering Temperature(1/16 inch (1.6mm) from case for 10 secs) 260CCollector Power Dissipation vs. Ambient TemperatureCollector Current vs. Low Collector-emitter Voltage200251502015100105050000.81.0-300255075100125Ambient temperat

12、ure TA ( C )Collector-emitter voltage VCE ( V )Forward Current vs. Ambient TemperatureCollector Current vs. Collector-emitter Voltage605050404030302020101000-3002550751001250246810Ambient temperature TA ( C )Collector-emitter voltage V ( V )CECollector-emitter Saturation Voltage vs. Ambient TemperatureCurrent Transfer Ratio vs. Forward Current3202802400.280.24IF = 5mA IC = 1mA0.202000.161600.12120804000.080.040125102050-300255075100Forward current IF (mA)DB92546m-AAS/A3Ambient temperature TA ( C )7/4/03Collector-emitter saturation voltage VCE(SAT) (V)Forwar