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降。Q1的发射极电流，也是经过R2的电流由下式给出222RVIBEER图3典型恒流源由于VE不变，VBE中也（大约）某一温度恒定，可以得出VR2是恒定的，所以IE也不变。由于晶体管的作用，发射极电流IE是非常接近等于集电极电流的晶体管集成电路（反过来，是当前通过负载）。因此，负载电流为常数（忽略了晶体管，由于早期的效果输出电阻）和电路作为一个恒定电流源的运作。只要温度保持不变（或变化不大），负载电流将是电源电压，R1和晶体管的增益无关。R2的允许负载电流在任何可取的值集，并计算或2RBEIV,由于VBE中通常是065V的硅器件（IR2也是发射极电流，并2650RZIV假设作为收藏家或负载所需的电流，同时提供HFE的足够大）。阻力在电阻，其中，K12到2（使R1是足够低，以确保有足够的IB）BZSIK1，是最低的，特别是可以接受的类型正在使用的晶体MIN2FERCBHIMINFEH管的电流增益。6、简单晶体管电流源与二极管补偿温度的变化会改变输出电流由图3电路交付因为VBE对温度很敏感。温度补偿的依赖可以用图4电路，包括一个标准（作为晶体管的半导体材料相同）与齐纳二极管系列二极管D为在图像显示在左侧。该二极管压降（VD）的追踪VBE中由于温度变化和温度，从而大大抵消了对CCS的依赖。电阻,2RRBEZIV由于VDVBE中065V，因此，,2RZIVR1的计算方法BZD