《InGaAsN文献总结》word版.docx

文献1结构示意图如下：亮点：l 引入Sb：降低band gap，提高lattice constantl 于rf-plasma nitrogen sources前方安装偏移盘 (Biased deflection plates)生长方法Sample1：GaInNAs (without the use of deflection plates)Sample2：GaInNAs(DP) (grown using deflection plates)Sample3：GaInNAsSb (grown using biased deflection plates) GaInNAs and GaInNAsSb double-heterostructure PIN diodes were grown at the Solid State Electronics Laboratory at Stanford University on (100) GaAs substrates using a load-locked Varian model Gen II solid-source MBE machine with nitrogen supplied by an SVT Associates model 4.5 rf-plasma cell. One GaInNAs structure was grown without the use of deflection plates (hereafter referred to as “GaInNAs”), one GaInNAs structure was grown using deflection plates (hereafter referred to as “GaInNAs(DP)”), and a third structure incorporated a GaInNAsSb active layer, and was also grown using biased deflection plates (hereafter referred to as “GaInNAsSb”). For the samples grown using the deflection plate bias, one plate was maintained at 40 V and one maintained at ground. A schematic of the growth structure is illustrated in Fig. 1. The active layer of each sample was unintentionally doped. The active GaInNAs(Sb) material is 1m thick, composed of approximately 12% N and approximately 57% In (and approximately 26% Sb for the Sb-containing sample). These compositions gave material that was close to lattice-matched to GaAs. After growth, annealing was performed on the dilute nitride materials in a similar manner as that required to achieve low-threshold current lasers, using a rapid thermal anneal with arsenic out-diffusion limited by a GaAs proximity cap. Solar cell devices were fabricated from these samples at the National Renewable Energy Laboratory (NREL). The front contacts are Au and the back contacts are annealed Au/Sn/Au.相关性能:(内量子效率)l The use of deflection plates has increased the IQE of the GaInNAs cell from 56 % to 68% at maximum. The addition of antimony drives the device IQE even higher, reaching 79 % at maximum.l The absorption edges of the materials closely correspond to the band gaps as measured by PL: GaInNAs, 1.08 eV; GaInNAs（DP）, 1.03 eV; and GaInNAsSb, 0.92 eV.（少子寿命）GaInNAs film：0.55 nsGaInNAs（DP） film：0.74 ns.GaInNAsSb：0.20 ns（与其他课题组制作的cells的比较）文献2（即文献1表1文献5）生长技术GaInNAs solar cells were grown by solid-source MBE using elemental sources of Ga, In, and As, with active nitrogen provided by an Oxford HD25 rf-plasma source. The growth temperature for the nitride layers was 530C and no post-growth annealing was performed. GaAs cells were grown for comparison at a temperature of 580C. For these experiments, the solar cells consist of an unintentionally doped GaInNAs, 3 m thick base layer and a Si-doped GaAs emitter (n1.5x1018 cm3). A highly Si-doped GaAs contact layer caps the structure. This structure is somewhat non-optimized in that it does not employ a backsurface field, has no window layer, and no way to selectively remove the contact layer after processing.相关性能：（内量子效率最高）The QEs for the samples with the wide depletion widths are the best reported for a GaInNAs sample, 0.96. A report by Li et al on GaInNAs samples with similar