[信息与通信]018um process introduction.ppt

? ar is single side or double side? ? single side 0.4 p_well photo (191) implant: p well impb160k15e3t00 n channel impb025k44e2t00 n_vt impd170k70e2t00 pwell asher mattson: 21 pwell wet stripspm only nldd1 photo implant: n pocket implant (d130k25e3t30r445) nldd implant (a003k80e4t00) nldd1 asher & wet strip (21+ spm) pldd1 photo implant: p pocket implant: (a130k30e3t30r445) pldd implant (f005k20e4t00) pldd1 asher & wet strip (21+ spm) pldd2 pldd2 photo pldd2 implant (f040k30e3t00) pldd2 asher & wet strip (21 +spm) pldd2-rta 0950rta010s (950 c, 10sec ) nldd2 nldd2 photo nldd2 implant (p040k40e3t00) nldd2 asher & wet strip (21 +spm) spa dep. precln nrca (sc1+sc2) lining teos diff 680 c, 150+-20a sin spacerdiff 650 c, 300+-30 a ox spacerimp 680c, teos 1000 +-25 a spacer etch (oxide+sin) post clean ncr ( spm only) spa post thk trench ox (3100+-480,avg.=3280 a), thin ox (175+-20 a) oxide strip ndh25a (100:1 hf 60sec) spa post ox strip n-pad (045, avg=10 a ) pre-cln nrcam (100:1 hf 60sec) sab cap ox sro 350a p+ rta annealing pvd 1015rta010s (1015 c, 10sec) post p+ rta thk-po pad (3400+-400, avg.= 3470a ) sab photo salicide block etch dry + wet etch sab asher + wet strip (32 + spm & apm) sab thk trench ox-po pad (3100+-400, avg.= 3000a ) 400 sion avoid side-lobe and blind avoid side-lobe and blind cont glue layer pvd etch100 a / imp ti 200a / cvd-tin50a silicide annealing (690c,n2 60s) 3.3k w cvd dep w cmp 10k hdp oxide dep pe-sion 1.5k dep cvd pe-sin 6k dep cvd