S9013三极管参数 TO-92三极管S9013规格书.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES ? Complementary to S9012 ? Excellent hFE linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol ParameterValue Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions MinTyp Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100A , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100A , IC=0 5 V Collector cut-off current ICBO VCB= 40V , IE=0 0.1 A Collector cut-off current ICEO VCE=20V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A hFE(1) VCE=1V, IC=50mA 64 400 DC current gain hFE(2) VCE=1V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.6 V Base-emitter voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V Transition frequency fT VCE=6V,IC=20mA,f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank D E F G H I J Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400 TO-92 1. EMITTER 2. BASE 3. COLLECTOR B,Nov,2011 【南京南山半导体有限公司 长电三极管选型资料【南京南山半导体有限公司 长电三极管选型资料】 048121620 0 20 40 60 80 100 110100 10 100 1000 110100 10 100 0.1110 1 10100 10 100 1000 0255075100125150 0 100 200 300 400 500 600 700 0.00.20.40.60.81.0 0.1 1 10 100 110100 100 1000 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) Static Characteristic COMMON EMITTER Ta=25 IB=60uA 120uA 180uA 240uA 300uA 360uA 480uA 420uA fT IC hFE COMMON EMITTER VCE=1V 330500 Ta=100 Ta=25 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IC 2000 30 300 303 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) =10 Ta=25 Ta=100 ICVCEsat 500 500 100 30 10 3 30.320 Cob Cib REVERSE VOLTAGE V (V) f=1MHz IE=0/ IC=0 Ta=25 VCB/ VEB Cob/ Cib CAPACITANCE C (pF) 300 230 VCE=6V Ta=25 TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) S9013Typical Characterisitics COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta () PC Ta VBEIC 30 3 0.3 Ta=25 Ta=100 COMMON EMITTER VCE=1V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) 30 3 =10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) Ta=25 Ta=100 500 ICVBEsat B,Nov,2011 Min.Max.Min.Max. A3.3003.7000.1300.146 A11.1001.4000.0430.055 b0.3800.5500.0150.022 c0.3600.5100.0140.020 D4.3004.7000.1690.185 D13.4300.135 E4.3004.7000.1690.185 e e12.4402.6400.0960.104 L14.10014.5000.5550.571 1.6000.063 h0.0000.3800.0000.015 Symbol Dimensions In MillimetersDimensions In Inches 1.270 TYP.0.050 TYP. 【南京南山半导体有限公司 长电三极管选型资料【南京南山半导体有限公司 长电三极管选型资料】 【南京南山半导体有限公司 长电三极管选型资料【南京南山半导体有限公司 长电三极管选型资料】 【南京南山半导体有限公司 长电三极管选型资料【南京南山半导体有限公司 长电三极管选型资料】 【南京南山半导体有限公司 长电三极管选型资料【南京南山半导体有限公司 长电三极管选型资料】 ItemSymbolValue Tolerance Body widthA14.5 0.2 Body heightA4.5 0.2 Body thicknessT3.5 0.2 Lead wire diameterd0.46 0.05 Pitch of componentP12.7 0.3 Feed hole pitchP012.7 0.2 Hole center to component centerP26.35 0.3 Lead to lead distanceF1,F22.5 0.3 Component alignment, F-Rh0 1.0 Type widthW18.0 + 1.0, - 0.5 Hole down tape widthW06.0 0.5 Hole positionW19.0 0.5 Hole down tape positionW21.0 MAX. Height of component from tape centerH19.0 1.0 Lead wire clinch heightH016.0 0.5 Lead wire(tape portion)L12.5 MIN. Feed hole diameterD04.0 0.2 Taped Lead Thicknesst10.4 0.05 Carrier Tape Thicknesst20.2 0.05 Position of holeP13.85 0.3 Component alignmentP0 1.0 Unit : mm 【南京南山半导体有限公司 长电三极管选型资料【南京南山半导体有限公司 长电三极管选型资料】 Sponge strip 2000 pcs Sponge strip The top gasket Label on the Inner Box Plastic bag Label on the Outer Box Inner Box: 333 mm162mm43mm Outer Box: 350 mm 340mm 250mm QA Label Seal the box with the tape Stamp “EMPTY” on the empty box 【南京南山半导体有限公司 长电三极管选型资料【南京南山半导体有限公司 长电三极管选型资料】 Inner Box