晶圆制造.ppt

2019 12 30 1 Chapter4WaferManufacturingandEpitaxyGrowing 2019 12 30 2 CrystalStructures AmorphousNorepeatedstructureatallPolycrystallineSomerepeatedstructuresSinglecrystalOnerepeatedstructure 2019 12 30 3 AmorphousStructure 2019 12 30 4 PolycrystallineStructure Grain GrainBoundary 2019 12 30 5 SingleCrystalStructure 2019 12 30 6 WhySilicon Abundant cheapSilicondioxideisverystable strongdielectric anditiseasytogrowinthermalprocess Largebandgap wideoperationtemperaturerange 2019 12 30 7 Source http www shef ac uk chemistry web elements nofr key Si html 2019 12 30 8 UnitCellofSingleCrystalSilicon 2019 12 30 9 CrystalOrientations x y z plane 2019 12 30 10 CrystalOrientations x y z plane plane 2019 12 30 11 CrystalOrientations x y z plane 2019 12 30 12 OrientationPlane Atom Basiclatticecell 2019 12 30 13 OrientationPlane Siliconatom Basiclatticecell 2019 12 30 14 IllustrationofthePointDefects SiliconAtom Impurityonsubstitutionalsite FrenkelDefect Vacancy 空位 orSchottkyDefect ImpurityinInterstitialSite SiliconInterstitial間隙 2019 12 30 15 DislocationDefects 2019 12 30 16 FromSandtoWafer Quartzsand silicondioxideSandtometallicgradesilicon MGS ReactMGSpowderwithHCltoformTCSPurifyTCSbyvaporizationandcondensationReactTCStoH2toformpolysilicon EGS MeltEGSandpullsinglecrystalingot 2019 12 30 17 FromSandtoWafer cont Cutend polishside andmakenotchorflatSawingotintowafersEdgerounding lap wetetch andCMPLaserscribeEpitaxydeposition 2019 12 30 18 晶圓形成之步驟FromSandtoSilicon MGS poly silicon with98 purity 1 首先由石英砂提煉成冶金級多晶矽 2019 12 30 19 SiliconPurificationI Si HCl TCS vapor SiliconPowder Hydrochloride Filters Condenser Purifier PureTCS liquid with99 9999999 Reactor 300 C 2019 12 30 20 PolysiliconDeposition EGS EGS Electronic gradeSilicon isalsopoly silicon 2019 12 30 21 SiliconPurificationII LiquidTCS H2 Carriergasbubbles H2andTCS ProcessChamber TCS H2 EGS HCl EGS 2019 12 30 22 ElectronicGradeSilicon Source 2019 12 30 23 CrystalPulling Makeasingle crystalsiliconingotCzochralski CZ methodFloatingZone FZ method 2019 12 30 24 CrystalPulling CZmethod GraphiteCrucible SingleCrystalsiliconIngot SingleCrystalSiliconSeed QuartzCrucible HeatingCoils 1415 C MoltenSilicon 2019 12 30 25 CZCrystalPullers MitsubishMaterialsSiliconSource 2019 12 30 26 CZCrystalPulling Source 2019 12 30 27 FloatingZoneMethod HeatingCoils PolySiRod SingleCrystalSilicon SeedCrystal HeatingCoilsMovement MoltenSilicon 2019 12 30 28 ComparisonoftheTwoMethods CZmethodismorepopularCheaperLargerwafersize 300mminproduction ReusablematerialsFloatingZonePuresiliconcrystal nocrucible Moreexpensive smallerwafersize 150mm Mainlyforpowerdevices 2019 12 30 29 IngotPolishing Flat orNotch Flat 150mmandsmaller Notch 200mmandlarger 2019 12 30 30 WaferSawing OrientationNotch CrystalIngot SawBlade DiamondCoating Coolant IngotMovement 2019 12 30 31 ParametersofSiliconWafer 2019 12 30 32 WaferEdgeRounding 邊緣圓滑化 Wafer Wafermovement WaferBeforeEdgeRounding WaferAfterEdgeRounding 2019 12 30 33 WaferLapping 粗磨拋光 Roughpolishedconventional abrasive slurry lappingToremovemajorityofsurfacedamageTocreateaflatsurface 2019 12 30 34 WetEtch Removedefectsfromwafersurface4 1 3mixtureofHNO3 79wt inH2O HF 49wt inH2O andpureCH3COOH Chemicalreaction 3Si 4HNO3 18HF 3H2SiF6 4NO 8H2O 2019 12 30 35 ChemicalMechanicalPolishing CMP Slurry PolishingPad Pressure WaferHolder Wafer 2019 12 30 36 200mmWaferThicknessandSurfaceRoughnessChanges 76mm 914mm AfterWaferSawing AfterEdgeRounding 76mm 914mm 12 5mm 814mm 2 5mm 750mm 725mm VirtuallyDefectFree AfterLapping AfterEtch AfterCMP 2019 12 30 37 EpitaxyGrow 磊晶成長 DefinitionPurposesEpitaxyReactorsEpitaxyProcess 2019 12 30 38 Epitaxy Definition Greekoriginepi upontaxy orderly arrangedEpitaxiallayerisasinglecrystallayeronasinglecrystalsubstrate 2019 12 30 39 Epitaxy Purpose BarrierlayerforbipolartransistorReducecollectorresistancewhilekeephighbreakdownvoltage Onlyavailablewithepitaxylayer ImprovedeviceperformanceforCMOSandDRAMbecausemuchloweroxygen carbonconcentrationthanthewafercrystal 2019 12 30 40 EpitaxyApplication BipolarTransistor n Epi p n n P substrate Electronflow n BuriedLayer p p SiO2 Al Cu Si Base Collector Emitter 2019 12 30 41 EpitaxyApplication CMOS P Wafer N Well P Well STI n n USG p p Metal1 Al Cu BPSG W P typeEpitaxySilicon 2019 12 30 42 SingleCrystalSiliconEpitaxialLayer UseChemicalVaporDeposition CVD ChoosegasphaseepitaxyCanbedopedusingdopantgassource 2019 12 30 43 SiliconSourceGases SilaneSiH4DichlorosilaneDCSSiH2Cl2TrichlorosilaneTCSSiHCl3TetrachlorosilaneSiCl4 2019 12 30 44 DopantSourceGases DiboraneB2H6PhosphinePH3ArsineAsH3 2019 12 30 45 DCSEpitaxyGrow ArsenicDoping Heat 1100 C SiH2Cl2 Si 2HCl DCSEpiHydrochloride 2019 12 30 46 SchematicofDCSEpiGrowandArsenicDopingProcess SiH2Cl2 Si AsH3 As AsH3 H HCl H2 2019 12 30 47 EpitaxialSiliconGrowthRateTrends GrowthRate micron min 1000 T K Temperature C 0 7 0 8 0 9 1 0 1 1 0 01 0 02 0 05 0 1 0 2 0 5 1 0 1300 1200 1100 1000 900 800 700 SiH4 SiH2Cl2 SiHCl3 Surfacereactionlimited Masstransportlimited 2019 12 30 48 BarrelReactor RadiationHeatingCoils Wafers 2019 12 30 49 VerticalReactor HeatingCoils Wafers Reactants Reactantsandbyproducts 2019 12 30 50 HorizontalReactor HeatingCoils Wafers Reactants Reactantsandbyproducts 2019 12 30 51 EpitaxyProcess BatchSystem Hydrogenpurge temperaturerampupHClcleanEpitaxiallayergrowHydrogenpurge temperaturecooldownNitrogenpurgeOpenChamber waferunloading reloading 2019 12 30 52 SingleWaferReactor HydrogenambientCapableformultiplechambersonamainframeLargewafersize to300mm Betteruniformitycontrol 2019 12 30 53 SingleWaferReactor HeatingLamps HeatRadiation Wafer QuartzWindow Reactants Reactants byproducts QuartzLiftFingers Susceptor 2019 12 30 54 EpitaxyProcess SingleWaferSystem Hydrogenpurge clean temperaturerampupEpitaxiallayergrowHydrogenpurge heatingpoweroffWaferunloading reloadingIn situHClclean 2019 12 30 55 WhyHydrogenPurge MostsystemsusenitrogenaspurgegasNitrogenisaverystableabundantAt 1000 C N2canreactwithsiliconSiNonwafersurfaceaffectsepidepositionH2isusedforepitaxychamberpurgeCleanwafersurfacebyhydridesformation 2019 12 30 56 PropertiesofHydrogen 2019 12 30