wafer工艺流程.ppt

CZ6Basicflowintroduction Page17 ProcessFeature CZ6Hprocess 1P3M optionlayer MECAP R poly CodeP 0 45umLV 5V logictechnologyCZ6HOTP onetimeprogram process 1P3M optionlayer MECAP R poly 0 45umLV 5V logictechnologyRecessLOCOS 700A Polycideex situPolyPOCl3Diffusion1500A WSI1750A 12 Ti silicideProcessMetal1 4500Al 100Ti 300TiN Metal2 3 6200Al 100Ti 300TiN Metal4 9000Al 100Ti 300TiN TTOPME 30000Al 100Ti 300TiN MIPmodule 0 78fF um2 HTO400ARPOLY 500ohm squareexsitu Poly module 1K 2K 5KdevelopedPassivation CZ6H 1200TEOS 10KSION PolyimideCZ6HOTP 1200TEOS 10KUVSION Page17 1 WAFERSTART2 OXIDEWETETCH LAL800 3MIN S D removenativeOX3 AA OXTOX 900C 210A PADOXtobufferNitridestress4 AANITRIDEDEP 760C 1500A4000LOCOS SuppressOXlateraldiffuse LOCOSgrown5 AAPHOTO6 AASINETCH7 PRASH 250C 8 PRSTRIP SPM CAPM NORMAL 9 FIELDOXIDATION 1100C 4000A 10 OXIDEWETETCH DHF 200A 11 SINWETETCH 65MIN 12 OXIDEWETETCH LL130 2MIN 13 SAC0 OX 900C 210A protectSisurfacefromPRcontaminationandserveasscreenOXwhenN PwellIMP PSUB PSUB LOCOS Page17 PSUB 5 PW PH6 PW IMPPWELLIMPLANT1B300K100E3A63B32R00 WellForm PWELLIMPLANT2B120K350E2T07W23R00 ChannelStop PWELLIMPLANT3B070K150E2T07W23R00 APTIMP PWELLIMPLANT4B030K175E2T07W23R00 VTadjust 7 PRASH8 PRSTRIP SPM CAPM NORMAL 1 NW PH2 NW IMPNWELLIMP1P700K150E3A63B32R00 WellForm NWELLIMP2P260K120E2T07W23R00 ChannelStop NWELLIMP3P150K150E2T07W23R00 APTIMP NWELLIMP4B015K185E2T07W23R00 VTadjust 3 PRASH4 PRSTRIP SPM CAPM NORMAL PSUB NWELL PWELL PWELL Page17 1 OXIDEWETETCH LL130 90SEC 2 GATEOXIDATION 850C 155A 8 CAPTOPWSIDEP SPUTTER 2000A 3 GATEPOLYDEP 620C 1500A O2LEAK 9 CAPTOPOXIDEDEP APOX 1200A4 PHOSPHORUSDIFFUSION10 CAPPHOTO5 PSGREMOVE LL1304MIN H2O24MIN 11 CAP ET6 GATEWSIDEP SPUTTER 1750A 12 CAPPRASH7 HTODEP 400A 13 PRSTRIP SPM HAPM SILICIDE PSUB PSUB NWELL PWELL PWELL MCAP Page17 14 P1PHOTO15 POLYETCH16 NLDDIMPLANT PSUB PSUB NWELL PWELL PWELL NMOS Page17 PSUB PSUB NWELL PWELL PWELL 1 PLDDPHOTO2 PLDDIMPLANT3 PRSTRIP4 SPACERDEP NSG 2000A 5 ANNEAL 950C 30M 6 SPACERETCH7 SAC3OXIDEDEP Page17 PSUB PSUB NWELL PWELL PWELL 1 NP PH3 NP IMPN IMPLANT1P100K280E3T45W23R12N IMPLANT2P040K120E4T00W23R00N IMPLANT3A070K200E5A00B004 PRSTRIP SPM SILICIDE 5 PP PH6 PP IMPP IMPLANT1B030K200E3T00W23R00P IMPLANT2F050K500E5A00B007 PRSTRIP SPM SILICIDE 8 ANNEAL 850C 50M Page17 CODE PH6 SALICIDESPUTTER TI330A CODEIMPLANTP360K300E3A00B00R007 RTA 700C 30S PRSTRIP SPM SILICIDE 8 BRANSONTREATMENT CAPM PREAMORPHOUSIMPLANT9 RTA 840C 10S OXIDEWETETCH LAL30 3MIN10SEC SILICIDE 10 BRANSONTREATMENT CAPM PSUB PSUB NWELL PWELL PWELL OTPcell Page17 ILDOXIDE1DEP APOX 1500A 7 ILDBPSGDEP B9 8 P5 4 13700A POLY2DEP8 PRE BPSGFLOW HAPM SILICIDE POLY2IMP9 BPSGFLOW 800C 30S POLY2PHOTO10 SINWETETCH 15MIN P2ETCH11 SLN244PRECMPO2TREATMENT6 ILDDEP SIN200A 12 ILDCMP PSUB PSUB NWELL PWELL PWELL RPOLY Page17 1 CTPHOTO6 CTNP PH2 CTPHOTOUVCURE7 CTNP IMPP070K200E5A00B003 CTETCH8 CTNPLUSPRASH 140C 4 PRSTRIP SPM CAPM SILICIDE 9 PRSTRIP SPM CAPM SILICIDE 5 CTPP IMPF070K500E4A00B0010 RTA 800C 10S PSUB PSUB NWELL PWELL PWELL CT Page17 PSUB PSUB NWELL PWELL PWELL CTGULESPUTTER TI300A TIN500A 5 M1DEP AL4500A TIN600A CTGLUEANNEAL 690C 30S 6 M1PHOTOCTWCVDDEP 475C 5000A 7 M1ETCHCTWETCHBACK8 SOLVENTSTRIP SST A2 10MIN Page17 PSUB PSUB NWELL PWELL PWELL IMD1DEP1 PETEOS 1200A IMD1USGDEP O3TEOS 4000A IMD1DEP2 PETEOS 17000A IMD1CMPALLOY 400C 10M H2 N2 M1 Page17 VIA1PHOTO7 VIA1WCVDDEP 5000A VIA1ETCH8 CTWETCHBACKVIA1PRASHING 140C 9 M2DEP TIN600A AL6200A SOLVENTSTRIP N311 10MIN 10 M2PHOTOVIA1GLUELAYERSPUTTER TI300A TIN1000A 11 M2ETCHRTA 700C 30S 12 SOLVENTSTRIP SST A2 10MIN M2 Page17 IMD2DEP1 PETEOS 1200A VIA1ETCH10 VIA2GLUELAYERSPUTTER RF300 TI300A TIN1000A IMD2USGDEP O3TEOS 4000A 11 VIA2WCVDDEP 5000A IMD2DEP2 PETEOS 17000A 12 VIA2WETCHBACKIMD2CMP13 TMSPUTTER TIN600A 6200A ALLOY 400C 10M N2 14 TMPHOTOVIA2PHOTO15 TMETCHVIA2ETCHVIA2PRASHING 140C SOLVENTST