二极管晶体管类电子符号大全.doc

肖特基二极管(Schottky Diode)SymbolParameter中文VRRMPeakrepetitivereversevoltage反向重复峰值电压VRWMWorkingpeakreversevoltage方向工作峰值电压VRDCBlockingVoltage反向直流电压VR(RMS)RMSReverseVoltage反向电压有效值IF(AV)AverageRectifiedForwardCurrent正向平均电流IRReverseCurrent反向电流IFSMNon-RepetitivePeakForwardSurgeCurrent正向浪涌电流VFForwardVoltage正向直流电压CjTypicalJunctionCapactiance结电容PDPowerDissipation耗散功率TjOperatingJunctionTemperature工作结温TstgStorageTemperatureRange存储温度Rth(j-a)ThermalResistancefromJunctiontoAmbient结到环境的热阻Pin二极管(Pin Diode)SymbolParameter中文VRContinuousreversevoltage反向直流电压IFContinuousforwardcurrent正向直流电流VFForwardvoltage正向电压IRReversecurrent反向电流Cddiodecapacitance二极管电容rddiodeforwardresistance二极管正向电阻Ptottotalpowerdissipation总的功率损耗TjJunctionTemperature结温Tstgstoragetemperature存储温度TVS二极管(TVS Diode)SymbolParameter中文IPPMaximumreversepeakpulsecurrent峰值脉冲电流VCClamplingvoltage钳位电压IRMaximumreverseleakagecurrent最大反向漏电流VBRBreakdownvoltage击穿电压VRWMWorkingpeakreversevoltage反向工作峰值电压VFForwardvoltage正向电压IFForwardcurrent正向电流ITTestcurrent测试电流可控硅(SCR)SymbolParameter中文VDRMPeakrepetitiveoff-statevoltage断态重复峰值电压VRRMPeakrepetitivereversevoltage反向重复峰值电压IT(RMS)RMSOn-statecurrent额定通态电流ITSMNonrepetitivesurgepeakon-statecurrent通态非重复浪涌电流IGMForwardpeakgatecurrent控制极重复峰值电流VTMpeakforwardon-statevoltage通态峰值电压IGTGatetriggercurrent控制极触发直流电流VGTGatetriggervoltage控制极出发电压IHHoldingcurrent维持电流IDRMPeakrepetitiveoff-statecurrent断态重复峰值电流IRRMPeakrepetitivereversecurrent反向重复峰值电流PG(AV)Averagegatepowerdissipation控制极平均功率Tjoperatingjunctiontemperaturerange工作结温TstgTstgstoragetemperaturerange存储温度三端稳压管(Three Terminal Voltage Regulator)SymbolParameter中文VIinputvoltage输入电压Vooutputvoltage输出电压VoLoadregulation输出调整率VoLineregulation输入调整率Iqquiescentcurrent偏置电流Iqquiescentcurrentchange偏置电流变化量VNOutputnoisevoltage输出噪声电压RRRipplerejection纹波抑制比Vddropoutvoltage降落电压Iscshortcircuitcurrent短路输出电流Ipkpeakcurrent峰值输出电流Toproperatingjunctiontemperaturerange结温Tstgstoragetemperaturerange存储温度43系列稳压管(Adjustable Shunt Regulator)SymbolParameter中文VKACathodevoltage阴极电压IKCathodecurrentrange(continous)阴极电流IrefReferenceinputcurrentrange,continous基准输入电流PDPowerdissipation耗散功率Rth(j-a)Thermalresistancefromjunctiontoambient结到环境的热阻Toproperatingjunctiontemperaturerange工作结温Tstgstoragetemperaturerange存储温度VrefReferenceinputvoltage基准输入电压Vref(dev)Deviationofreferenceinputvoltageoverfulltemperaturerange全温度范围内基准输入电压的偏差Vref/VKARatioofchangeinreferenceinputvoltagetothechangeincathodevoltage基准输入电压变化量与阴极电压变化量的比Iref(dev)Deviationofreferenceinputcurrentoverfulltemperaturerange全温度范围内基准输入电流的偏差IminMinimumcathodecurrentforregulation稳压时最小负极电流IoffOff-statecathodecurrent关断状态阴极电流|ZKA|Dynamicimpedance动态阻抗普通晶体管(Transistor)SymbolParameter中文VCBOCollector-Basevoltage发射极开路,集电极-基极电压VCEOCollector-emittervoltage基极开路,集电极-发射极电压VEBOEmitter-basevoltage集电极开路,发射极-基极电压ICCollectorcurrent集电极电流PCCollectorpowerdissipation集电极耗散功率TjJunctiontemperature结温Tstgstoragetemperature存储温度V(BR)CBOCollector-Basebreakdownvoltage发射极开路,集电极-基极反向电压V(BR)CEOCollector-emitterbreakdownvoltage基极开路,集电极-发射极反向电压V(BR)EBOEmitter-basebreakdownvoltage集电极开路,发射极-基极反向电压ICBOCollectorcut-offcurrent发射极开路,集电极-基极截止电流IEBOEmittercut-offcurrent集电极开路,发射极-基极截止电流ICEOCollectorcut-offcurrent基极开路,集电极-发射极截止电流hFEDCcurrentgain共发射极正向电流传输比的静态值VCEsatCollector-emittersaturationvoltage集电极-发射极饱和电压VBEsatBase-emittersaturationvoltage基极-发射极饱和电压VBEBase-emittervoltage基极-发射极电压fTTransitionfrequency特征频率CoboCollectoroutputcapacitance共基极输出电容CiboCollectorinputcapacitance共基极输入电容FNoisefigure噪声系数tonTurn-ontime开通时间toffTurn-offtime关断时间trRisetime上升时间tsStoragetime存储时间tfFalltime下降时间tdDelaytime延迟时间数字晶体管(Digital Transistor）SymbolParameter中文VCCSupplyvoltage直流电压VINinputvoltage输入电压IOoutputcurrent输出电流PDPowerdissipation功率损耗VI(off)Input-offvoltage输入截止电压VI(on)Input-onvoltage输入开启电压VO(on)outputvoltage输出电压IIinputcurrent输入电流IO(off)outputcurrent输出截止电流GIDCcurrentgain直流增益R1Inputresistance输入电阻R2/R1Resistanceratio电阻率fTTransitionfrequency传输频率Tjjunctiontemperature结温Tstgstoragetemperaturerange存储温度VCBOCollector-basevoltage发射极开路,集电极-基极反向击穿电压VCEOCollector-emittervoltage基极开路,集电极-发射极反向击穿电压VEBOEmitter-basevoltage集电极开路,发射极-基极反向击穿电压场效应管(MOSFET)SymbolParameter中文IDContinousdraincurrent漏极直流电流VGSGate-sourcevoltage栅-源电压VDSDrain-sourcevoltage漏-源电压EASsinglepulseavalchaneenergy单脉冲雪崩击穿能量Rth(j-a)Thermalresistancefromjunctiontoambient结到环境的热阻Rth(j-c)Thermalresistancefromjunctiontocase结到管壳的热阻V(BR)DSSDrain-sourcebreakdownvoltage漏源击穿电压V(GS)thGatethresholdvoltage栅源阈值电压IGSSGate-bodyleakagecurrent漏-源短路的栅极电流IDSSZerogatevoltagedraincurent栅-源短路的漏极电流rDS(on)Drain-sourceon-resistance漏源通态电阻gfsForwardtransconductance跨导VSDDiodeforwardvoltage漏源间体内反并联二极管正向压降CissInputcapacitance栅-源电容CossOutputcapacitance漏-源电容CrssReversetransfe