场效应管参数大全1.doc

型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK0065PANASONICN-JFET,用于低频阻抗转换、电容式话筒120.0020.02CS1102SK0123PANASONICN-JFET,用于低频阻抗转换、电容式话筒200.0020.2SST2012SK0198PANASONICN-JFET,用于低频放大300.020.152N38222SK0301PANASONIC硅N-JFET,用于低频放大、开关，55V/0.03A/0.25W550.030.252SK0614PANASONICN-MOSFET,用于开关800.50.752SK0615PANASONICN-MOSFET,用于开关800.512SK0655PANASONICN-MOSFET,用于开关500.10.22SK0656PANASONICN-MOSFET,用于开关500.10.22SK0657PANASONICN-MOSFET,用于开关500.10.42SK0662PANASONICN-JFET,用于低频放大300.0020.152SK0663PANASONICN-JFET,用于低频放大、开关550.030.152SK0664PANASONICN-MOSFET,用于开关500.10.152SK0665PANASONICN-MOSFET,用于开关200.10.22SK1000N-FET,宽频带放大220.050.252SK1001N-FET,变频换流,功率放大,开关45010502SK1002N-FET,一般用途200.00050.252SK1006N-FET,变频换流,功率放大,开关4505402SK1006-01MRFUJIN-MOSFET,用于功率整流、开关电源、DC-DC转换、一般功率放大,450V/5A/40W4505402SK1007FUJIN-FET,变频换流,功率放大,开关4505602SK1007-01FUJIN-MOSFET,用于功率整流、开关电源、DC-DC转换、一般功率放大,450V/5A/60W4505602SK1008FUJIN-FET,变频换流,功率放大,开关5004.5602SK1008-01FUJIN-MOSFET,用于功率整流、开关电源、DC-DC转换、一般功率放大,500V/4.5A/60W5004.5602SK1009FUJIN-FET,变频换流,功率放大,开关4507802SK1009-01FUJIN-MOSFET,功率放大,开关效应管4507802SK1010-01FUJIN-MOSFET,功率放大,开关效应管5006802SK1011FUJIN-FET,变频换流,功率放大,开关450101002SK1011-01FUJIN-MOSFET,功率放大,开关效应管450101002SK1012FUJIN-MOSFET,变频换流,功率放大,开关500101002SK1012-01FUJIN-MOSFET,功率放大,开关效应管500101002SK1013FUJIN-MOSFET,变频换流,功率放大,开关45013型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK1013-01FUJIN-MOSFET,用于功率整流、开关电源、DC-DC转换、一般功率放大,450V/13A/125W450131252SK1014FUJIN-MOSFET,变频换流,功率放大,开关500121252SK1014-01FUJIN-MOSFET,用于功率整流、开关电源、DC-DC转换、一般功率放大,500V/12A/125W500121252SK1015FUJIN-MOSFET,变频换流,功率放大,开关450181252SK1015-01FUJIN-MOSFET,功率放大,开关效应管450181252SK1016FUJIN-MOSFET,用于功率整流、开关电源、DC-DC转换、一般功率放大,500V/15A/125W500151252SK1016-01FUJIN-MOSFET,功率放大,开关效应管500151252SK1017FUJIN-MOSFET,用于开关,500V/15A/125W450201502SK1017-01FUJIN-MOSFET,用于功率整流、开关电源、DC-DC转换、一般功率放大,450V/20A/125W450201502SK1018FUJIN-MOSFET,用于开关,500V/18A/125W500181252SK1019FUJIN-MOSFET,用于功率整流、开关电源、DC-DC转换、一般功率放大,450V/35A/300W450353002SK1020FUJIN-MOSFET,用于功率整流、开关电源、DC-DC转换、一般功率放大,500V/30A/300W500303002SK1021FUJIN-FET,变频换流,功率放大,开关8003602SK1022FUJIN-FET,变频换流,功率放大,开关9002.5602SK1023FUJIN-FET,变频换流,功率放大,开关8004602SK1023-01FUJIN-FET,功率放大,开关效应管8004602SK1024FUJIN-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大9003.5602SK1024-01FUJIN-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大9003.5602SK1025FUJIN-MOSFET,功率放大5020452SK10942SK1026N-FET,功率放大250201502SK11352SK1027N-FET,功率放大300201502SK11352SK1028TOSHIBAN-MOSFET,用于VHF电视广播发射,100V/6A/125W10061252SK1029N-MOSFET,功率场效应管500102002SK103N-FET,电容话筒专用,高频放大(射频放大),音频(低频),前置/输入级200.0010.08SST2012SK1030N-FET,功率放大,开关,激励、驱动8003502SK1030AN-FET,功率放大,开关,激励、驱动9003502SK1031N-FET,宽频带放大500.00650.12SK1032N-FET,功率放大,开关,激励、驱动8008001202SK1032AN-FET,功率放大,开关,激励、驱动9008001202SK1033N-FET,变频换流,激励、驱动6020452SK9157型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK1034N-FET,变频换流,激励、驱动10015452SK1035PANASONICN-MOSFET,用于DC/DC转换、无触点继电器、螺线管驱动、电动机驱动15012452SK1036PANASONICN-MOSFET,用于DC-DC转换、螺线管驱动、电动机驱动25010502SK1037N-MOSFET,功率场效应管25010502SK1038N-MOSFET,功率场效应管4005502SK1039N-FET,功率放大,开关,激励、驱动4008502SK103K2N-FET,电容话筒专用,高频放大(射频放大),音频(低频),前置/输入级200.000040.082SK103L1N-FET,电容话筒专用,高频放大(射频放大),音频(低频),前置/输入级200.000070.082SK103L2N-FET,电容话筒专用,高频放大(射频放大),音频(低频),前置/输入级200.000120.082SK103-M1N-FET,电容话筒专用,高频放大(射频放大),音频(低频),前置/输入级200.00020.082SK103-M2N-FET,电容话筒专用,高频放大(射频放大),音频(低频),前置/输入级200.00030.082SK103-N1N-FET,电容话筒专用,高频放大(射频放大),音频(低频),前置/输入级200.000540.082SK103-N2N-FET,电容话筒专用,高频放大(射频放大),音频(低频),前置/输入级200.0010.082SK104N-FET,高频放大（射频放大）,音频（低频）300.0120.25NTE3122SK1040N-FET,功率放大,开关,激励、驱动400101002SK1041N-MOSFET,功率场效应管400151302SK1042N-MOSFET,功率场效应管400201302SK1043N-FET,微波40.062SK1044N-FET,功率放大80051502SK6842SK1045N-FET,功率放大90051502SK6842SK1046N-FET,微波40.072SK1047N-FET,功率放大250201502SK11352SK1048N-FET,功率放大300201502SK1049N-FET,功率放大450151502SK6822SK104EN-FET,高频放大(射频放大),音频(低频)300.00150.252SK104FN-FET,高频放大（射频放大）,音频（低频）300.0030.252SK104-HN-FET,高频放大（射频放大）,音频（低频）300.0060.252SK104-JN-FET,高频放大（射频放大）,音频（低频）300.0120.252SK105SONYN-FET,宽频带放大,音频(低频)500.0120.25CS105,IFN1052SK1050N-FET,功率放大500151502SK683型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK1051N-FET,功率放大50401202SK1052SANYON-MOSFET,用于高速开关，450V/0.5A/30W4500.5302SK1053SANYON-MOSFET,用于高速开关，450V/1A/40W4501402SK1056HITACHIN-MOSFET,用于低频放大，配对管2SJ160，120V/7A/100W12071002SK1057HITACHIN-MOSFET,用于低频放大，配对管2SJ161，140V/7A/100W14071002SK1058HITACHIN-MOSFET,用于低频放大，配对管2SJ162，160V/7A/100W16071002SK4052SK1059N-FET,功率放大,开关,激励、驱动605202SK1059ZN-MOSFET,功率场效应管605202SK106N-FET,音频(低频)500.0120.3NTE1332SK1060N-MOSFET,功率场效应管1005202SK1060ZN-MOSFET,功率场效应管1005202SK1061TOSHIBAN-MOSFET,用于高速开关、模拟开关、换流，配对管2SJ167，60V/0.2A/0.3600.20.32SK1062TOSHIBAN-MOSFET,用于高速开关、模拟开关、换流，配对管2SJ168，60V/0.2A/0.2600.20.22SK1063N-MOSFET,功率场效应管45015125BUZ642SK1064N-MOSFET,功率场效应管50015125IRF4502SK1065SANYON-MOSFET,用于高频放大，20V/0.02A/0.15200.020.152SK1066SANYON-MOSFET,用于高频放大，15V/0.02A/0.15150.020.152SK1067SANYON-MOSFET,用于FM调谐器、VHF波段放大，16V/0.03A/0.15160.030.152SK1068SANYON-MOSFET,用于阻抗转换、红外线传感器，40V/0.001A/0.1400.0010.12SK1069SANYON-MOSFET,用于低频放大，40V/0.02A/0.15400.020.152SK106AN-FET,音频(低频)500.00150.32SK106BN-FET,音频(低频)500.0030.32SK106-CN-FET,音频(低频)500.0060.32SK106DN-FET,音频(低频)500.0120.32SK107N-FET,直流,高频放大（射频放大）,甚高频270.01210.25J3042SK1070HITACHIN-JFET,用于低频/高频放大，22V/0.05A/0.15W220.050.152SK107-2N-FET,直流,高频放大（射频放大）,甚高频270.00550.252SK1073N-FET8003452SK107-3N-FET,直流,高频放大（射频放大）,甚高频270.00770.252SK1074N-FET8003120型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK107-4N-FET,直流,高频放大（射频放大）,甚高频270.00990.252SK107-5N-FET,直流,高频放大（射频放大）,甚高频270.01210.252SK1078N-FET,变频换流600.81.52SK1079N-FET,变频换流,激励、驱动1000.60.52SK108N-FET,音频(低频)500.0120.3PN43922SK1081FUJIN-FET,变频换流,功率放大,开关80071252SK1081-01FUJIN-FET,功率放大,开关效应管80071252SK1082FUJIN-FET,变频换流,功率放大,开关90081252SK1082-01FUJIN-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大，900V/6A/125W90061252SK1083-MRFUJIN-MOSFET,用于电动机控制、一般功率放大、DC-DC转换，60V/8A/20W608202SK1084N-FET,变频换流,激励、驱动1005202SK1085-MFUJIN-MOSFET,用于电动机控制、一般功率放大、DC-DC转换，150V/3A/20W1503202SK1086-MRFUJIN-MOSFET,用于电动机控制、一般功率放大、DC-DC转换，60V/20A/35W6020352SK1087-MRFUJIN-MOSFET,用于电动机控制、一般功率放大、DC-DC转换，100V/12A/35W10012352SK1088-MFUJIN-MOSFET,用于电动机控制、一般功率放大、DC-DC转换，150V/9A/35W1509352SK1089FUJIN-MOSFET,用于电动机控制、一般功率放大、DC-DC转换，60V/235A/80W6035802SK109N-FET,配对管,音频(低频)500.0120.3U4062SK1090N-FET,变频换流,激励、驱动10020802SK1091N-FET,变频换流,激励、驱动150150802SK1092N-FET,宽频带放大,超高频,甚高频40.080.152SK1093HITACHIN-MOSFET,用于高速功率开关6010202SK1094HITACHIN-MOSFET,用于高速功率开关6015252SK1095HITACHIN-MOSFET,用于高速功率开关6025302SK1096-MRFUJIN-MOSFET,用于电动机控制、一般功率放大、DC-DC转换，60V/13A/30W6013302SK1097N-FET,变频换流,激励、驱动1008302SK1098-MFUJIN-MOSFET,用于电动机控制、一般功率放大、DC-DC转换，150V/6A/30W1506302SK1099HITACHIN-MOSFET,用于高速功率开关50010802SK109AN-FET,配对管,音频(低频)500.0120.32SK11TOSHIBA停产,用2SK30ATM代替,N-FET,斩波、限幅,直流,音频（低频）200.00650.12SK110N-FET,音频(低频)300.0350.9型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK11-0TOSHIBA停产,用2SK30ATM代替,N-FET,斩波、限幅,直流,音频（低频）200.00250.12SK1100N-FET,微波40.060.22SK1101-01MRFUJIN-MOSFET,功率放大,开关效应管45010502SK1102-01MRFUJIN-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大50010502SK11023-01MRFUJIN-FET,功率放大,开关效应管50010502SK1103PANASONICN-JFET,用于开关，配对管2SJ163，65V/0.02A/0.15W650.020.152SK1104PANASONICN-JFET,用于开关，配对管2SJ164，65V/0.02A/0.3W650.020.32SK1105N-FET,变频换流,功率放大,开关8003802SK1108N-FET,前置/输入级200.00060.12SK1109FUJIN-JFET,用于阻抗转换200.010.082SK111N-FET,配对管,音频(低频)300.0350.42SK1102SK1112N-FET,变频换流,激励、驱动605202SK1113N-FET,变频换流,激励、驱动1203202SK1114N-FET,变频换流,激励、驱动6012402SK1115N-FET,变频换流,激励、驱动6020602SK1116N-FET,变频换流,激励、驱动100251002SK1117TOSHIBAN-MOSFET,用于高速大电流DC-DC转换、继电器和电动机驱动，600V/6A/100W60061002SK1118TOSHIBAN-MOSFET,用于高速大电流DC-DC转换、继电器和电动机驱动，600V/6A/45W6006452SK1119TOSHIBAN-MOSFET,用于高速大电流开关、DC-DC转换、电动机驱动，1000V/4A/100W100041002SK112TOSHIBA停产,用2SK117代替,N-FET,斩波、限幅,直流,音频(低频),开关500.0090.252N54852SK1120TOSHIBAN-MOSFET,用于高速大电流开关、DC-DC转换、电动机驱动，1000V/8A/150W100081502SK112-0TOSHIBA停产,用2SK117代替,N-FET,斩波、限幅,直流,音频(低频),开关500.0090.252SK1121N-FET,功率放大5025452SK1122NECN-MOSFET,用于螺线管、电动机和灯驱动，100V/40A/100W100401002SK1123NECN-MOSFET,用于螺线管、电动机和灯驱动，60V/40A/100W60401002SK1124N-FET,变频换流,功率放大,开关60451252SK112RTOSHIBA停产,用2SK117代替,N-FET,斩波、限幅,直流,音频(低频),开关500.00360.252SK113SONYN-FET,斩波、限幅,开关500.150.25IFN1132SK113-0TOSHIBA停产,用2SK363代替,N-FET,斩波、限幅,开关500.0750.252SK1132NECN-MOSFET,用于高速开关，50V/0.1A/0.25W500.10.25型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK1133NECN-MOSFET,用于高速开关，50V/0.1A/0.2W500.10.22SK1134FUJIN-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大5045802SK1135FUJIN-MOSFET,用于开关整流、DC-DC转换250151002SK3882SK1136N-FET,功率放大5010302SK1137N-FET,功率放大5016402SK1138N-FET,功率放大1507302SK1139N-FET,功率放大15013402SK113RTOSHIBA停产,用2SK363代替,N-FET,斩波、限幅,开关500.030.252SK113YTOSHIBA停产,用2SK363代替,N-FET,斩波、限幅,开关500.150.252SK1142N-FET,功率放大8002352SK1143N-FET,功率放大9002352SK1149N-FET,变频换流,功率放大,开关1002352SK1150N-FET,变频换流,功率放大,开关6040752SK1151LSHITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，450V/1.5A/20W4501.5202SK1152LSHITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，500V/1.5A/20W5001.5202SK1153HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，450V/3A/30W450330BUZ742SK1154HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，500V/6A/30W500330BUZ742SK1155HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，450V/5A/50W450550BUZ602SK1156HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，500V/5A/50W500550BUZ41A2SK1157HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，450V/7A/60W450760BUZ602SK1158HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，500V/7A/60W5007602SK1159HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，450V/8A/60W450860IRF8412SK1160HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，500V/8A/60W500860IRF8402SK1161HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，450V/10A/100W45010100MTH7N452SK1162HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，500V/10A/100W50010100MTH7N502SK1163HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，450V/11A/100W45011100IRFP4412SK1164HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，500V/11A/100W50011100BUZ3082SK1165HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，450V/12A/100W45012100BUZ3262SK1166HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，500V/12A/100W50012100BUZ3302SK1167HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，450V/15A/100W45015100BUZ351型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK1168HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，500V/15A/100W50015100IRFP4502SK1169HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，450V/20A/120W450201202SK117TOSHIBAN-MOSFET,用于低噪声音频放大，50V/0.01A/0.3W500.010.3NTE4582SK1170HITACHIN-MOSFET,用于高速功率开关、开关整流、DC-DC转换，500V/20A/120W50020120IRFP4602SK117-0N-FET,音频(低频)500.00140.32SK1171N-FET,变频换流,功率放大,开关8004802SK1172FUJIN-MOSFET,用于高速功率开关9003.5802SK1173N-FET,一般用途500.50.22SK1177EXN-MOSFET,500V/2.5A/30W5002.5302SK1178EXN-MOSFET,500V/4A/35W5004352SK1179EXN-MOSFET,500V/8.5A/85W5008.5852SK117BLN-FET,音频(低频)500.0140.3NTE4592SK117GRN-FET,音频(低频)500.00650.3NTE4582SK117YN-FET,音频(低频)500.0030.32SK118TOSHIBAN-JFET,用于阻抗转换和电容式麦克风，50V/0.01A/0.1W500.010.1J2012SK1180EXN-MOSFET,500V/10A/85W50010852SK118-0N-FET,电容话筒专用,音频(低频)500.00142SK2082SK1181EXN-MOSFET,500V/13A/85W50013852SK1183EXN-MOSFET,200V/3A/25W2003252SK1184EXN-MOSFET,200V/5A/30W2005302SK1185EXN-MOSFET,100V/5A/25W1005252SK1186EXN-MOSFET,100V/9A/30W1009302SK1187EXN-MOSFET,100V/12A/35W10012352SK1188EXN-MOSFET,60V/10A/25W6010252SK1189EXN-MOSFET,60V/15A/30W6015302SK118RN-FET,电容话筒专用,音频(低频)500.000752SK119N-FET,直流,开关300.0120.252N43402SK1190EXN-MOSFET,60V/22A/35W6022352SK1191EXN-MOSFET,60V/30A/40W6030402SK1192EXN-MOSFET,60V/40A/90W604090型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK1194SHINDENGENN-MOSFET,用于DC-DC转换、DC 12-24V电源，230V/0.5A/6W2300.562SK1195SHINDENGENN-MOSFET,用于DC-DC转换、DC 12-24V电源，230V/1.5A/10W2301.5102SK1196N-FET,微波60.070.22SK1197N-FET,功率放大,音频(低频)1000.5202SK1198N-MOSFET,功率场效应管7002352SK1199HITACHIN-MOSFET,用于高速功率开关9002502SK11RTOSHIBA停产,用2SK30ATM代替,N-FET,斩波、限幅,直流,音频（低频）200.0010.12SK12TOSHIBA停产,用2SK30ATM代替,N-FET,斩波、限幅,直流,音频（低频）200.0050.12SK120N-FET,高频放大(射频放大),混频,甚高频150.0050.2NTE4512SK12-0TOSHIBA停产,用2SK30ATM代替,N-FET,斩波、限幅,直流,音频（低频）200.00160.12SK1200N-FET,变频换流,功率放大,开关900380MTP2N902SK1201N-FET,变频换流,功率放大,开关9004802SK8712SK120-1N-FET,高频放大(射频放大),混频,甚高频150.0030.22SK1202N-FET,变频换流,功率放大,开关9005100BUZ3312SK120-2N-FET,高频放大(射频放大),混频,甚高频150.0050.22SK1203FUJIN-MOSFET,用于高速功率开关90061002SK1204N-FET,变频换流,功率放大,开关9008100IRFPF502SK1205N-FET,变频换流,功率放大,开关100051002SK1206N-FET,变频换流,功率放大,开关100012602SK121SONYN-JFET,用于低频低噪声放大和高频放大300.020.3J21