Upgrade Silicon Strip Detectors (SSD) Hartmut F-W Sadrozinski.ppt

1 UpgradeSiliconStripDetectors SSD HartmutF W SadrozinskiSCIPP UCSantaCruz StatusPre RadTestingPost radTestingProtonsNeutronsGammasPreparationforModules StavesWorksharedbyUCSC BNL SUNY NYU KEK Tsukuba Liverpool Cambridge Lancaster Ljubljana 2 SSDDevelopmentforATLASUpgradeTracker ShareexpertiseandcostwithintheATLASgroupsLeveragerad hardexperiencewithp typeSSD RD50 KEK Sensorfabricationwiththeonlyviablelarge volumeandhigh qualitymanufacturer HPK Produceproto typeteststructures radiationdamage isolation Producefull sizesensorstosupportmodule staveprogram stereo bonding gluing thermalmanagement KEKTsukubaLiverpoolLancasterGlasgowSheffieldCambridgeQMLFreiburgMPILjubljanaPragueBarcelonaValenciaSantaCruzBNLPTI 3 ATLAS07 PurposeFullsquareforModules StaveUsein2008DeliverytargetPre seriesFeb 20082ndPre seriesSep 2008ProductionDec2008Wafer150mmp FZ 100 320 mthickn stripisolationIndividualp stopP sprayP spray p stopStereo40mradIntegratedinhalfareaDeadarea 2mmStripsegments4forSS butstilltruefor4 limit LS segmentswire bonded Stripsegments4forSS butstilltruefor4 limit LS segmentswire bonded Aug 12 2008 StatusofATLAS07 Aftertestingofpre series ATLAS07M withmodifiedmasksEdgesofthebiasringofthestereostripsZone4PTPstructures 4typesZone2mistakecorrectedFabricationinprocess2ndPre seriesDelivery MidSep Studyofp spraydosebyHPKOrderof Al metal dummysensorsLimitednumberof mechanicalsamples 5 ATLAS07p typemini SSD 6 inch 150mm waferMaximumsizesensor 10cmx 10cm PrototypingsimultaneouslybothshortandlongstripsPrototypingsimultaneouslybothaxialandstereostripsR D24Teststructures Zones Candidateisolationstructures Punch thruProtection structuresWide NarrowmetaleffectWide NarrowpitcheffectP sprayvs P bined 26MonitorDiodes4mmx4mm 3Isolationschemesonwaferswithandwithoutp sprayWafers1 17withp spray 20 30nop spray 6 ATLAS07Specification 7 ATLAS07Order 132Wafers 8 ATLAS07Pre Series VerifyMasksVerifySpecificationsChoseIsolationschemes InitialVerificationofRadiationHardnessStartModule Staveconstruction 9 Pre radBreakdownVoltage Specs 600V Baseline commonnarrowp stop ShowsgoodbehaviorBUT nopunch throughprotectionZone4haspunch through Zone3withp sprayisacceptable 10 Pre radIsolation InterstripResistance RBias 1 22MW Rint 2 DV2 Di1 InterstripResistance noBiasDependence 100 sofGWlessforZone1 5 11 Pre radIsolation InterstripCapacitance Interstripcapacitancetonextneighborpair total 30 higher Closeto1pF cm Samevalueforp spraywithandwithoutimplants No biasdependenceforZone1andZone3 12 Pre radFull sizeSensors p spray i V Averagecurrentbeforebreakdowni 400V 0 83uA 8nA cm 2Averagebreakdown 530V 13 Fullwafer W9 striptest Allfoursegments ofallwafers probedfoundlessfaultychannelsthanindicatedbyHPK Testing retesting 15360channelstakesquitesometime BradHommels Cambridge SUNYStoryBrookisworkingonthis 14 i VpostKEKProtons LjubljanaNeutrons Post radnobreakdown incontrasttopre rad 15 ChargeCollectionKEKProtonIrradiation CollectedChargeupto 1000V 16 EfficiencypostKEKProtonIrradiation Efficiency 1fCThresholdsaturatesat 600V 17 Affolderetal Liverpool ChargeCollectionpostKEKProtonIrradiation CompareswellwillMicronpandnirradiations 18 Surface GammaIrradiationatBNL GammaIrradiation 1Mrad biased 0 5VonAl atBNL checkIsolation InterstripCapacitance MD p stop zone3W26 BZ3 P13p stop zone4W29 BZ4 P4p spray zone1W02 BZ1 P7p spray zone3W06 BZ3 P6p spray zone4W06 BZ4 P22 AllAlreadouttracesarebondedouttogetherDuringirradiationbiasthemetalstripsto 0 5Vwrttobiasring Biasbackplaneto200V RTannealingforabout10days Takei VwiththeAleither grounded or floating 19 i VpostGammaIrradiation BreakdownBehaviornotfullyunderstood 20 i VpostGammaIrradiation N2flowpreventsbreakdown 21 IsolationpostGammaIrradiation InterstripResistancemuchreduced ok 22 GammaIrradiation Gluetestson going ObservationsafterIrradiationwithgamma sandgluingtosurface Breakdownvoltagemuchreduced to100 200V Improvementobservedaftercleaningand orflushingwithN2gasShorttermannealing 10min 60deg doesnothelpThingstotest originofbreakdowneffectofpassivationeffectofguardringseffectofaccumulatedsurfacechargeComparisonwithothermanufacturershelps 23 SummaryATLAS07 n in pp typemicrostripsensorshavebeenfabricatedinp FZandp MCZwafers forseveralyearsbynowatHPK Latestsubmission ATLAS07 withintheATLASR Dcollaborationof Developmentofnon invertingSiliconstripdetectorsfortheATLASIDupgrade Numberofisolationstructuresarebeinginvestigatedinmini SSDteststructuresAfullsizemicrostripsensorhasbeenprototypedformodule stavework Pre seriesof 9waferswithmanyteststructuresreceivedTotalof132waferscontracted 2differentFZwafertypesFulltestingbyHPKModificationofmasksrequiredafterfirstpre seriesHPKwillinvestigateoptimizationofp sprayProtonirradiations 70MeV 800MeV 24GeV neutronirradiations 1MeV andgammairradiationhavebeenperformedontheteststruc