UPD16510影像感测.doc

UPD16510影像感测 DATA SHEETMOSINTEGRATED CIRCUIT?PD16510VERTICAL DRIVERFOR CCDSENSOR The?PD16510is avertical driverdedicated forCCD areaimage sensorsthat incorporatesa levelconversioncircuit and a three-level outputfunction.It contains a CCD vertical register driver(4channels)andaVOD shutterdriver(1channel).The?PD16510,which usesthe CMOSprocess,provides optimumtransmission delayand outputON resistancecharacteristicsfor thevertical driveof CCDsensors.It can be usedfor low-voltage logic(logic power-supply voltage:2.0to5.5V).FEATURES?CCDverticalregisterdriver:4channels,VOD shutter driver:1channel?Small package:20-pin plasticshrink SOP(225mil)?High breakdownvoltage:33V MAX.?Low outputON resistance:30?TYP.?Low voltageoperation(logic power-supply voltage:2.0to5.5V)?Latch-up free?Pin-patible with?PD16506(CCD driver)APPLICATIONS?CamcordersORDERING INFORMATIONPartNumber Package?PD16510GR-8JG20-pin plasticshrink SOP(225mil)The informationin thisdocument issubject tochange withoutnotice.Document No.S12191EJ2V0DS00(2nd edition)(Previous No.IC-3448)Date PublishedMay1997NPrinted inJapanThe markshows majorrevised points.1994?PD16510BLOCK DIAGRAM2V sb204V DD2aV DD116V DD119V DD2bV SS2V DD2aThree TO1TI17level5V SSPG18V DD2bTwo level3BO1BI19Input interfaceVV SSDD1TI214(2.0to5.5V)V DD2aThree level17TO2PG213V SSBI212V DD2bTwo level18BO2SUBI10V SSNC11V sbTwolevel1SUBOV CC6V SSGND15?PD16510PIN CONFIGURATION20-pin plasticshrink SOP(225mil)SUBOV SSBO1V DD2aTO1V CCTI1PG1BI1SUBI1234567891020191817161514131211V sbV DD2bBO2TO2V DD1GNDTI2PG2BI2NCRemark The?PD16510is pin-patible withthe?PD16506(CCD driver).However,the VOD shutter drive pulse inputpolarity switchingpin(SSP)of the?PD16506correspondsto theGND pinin the?PD16510(pin15).PIN FUNCTIONSNo.1234567891011121314151617181920SymbolSUBOV SSBO1V DD2aTO1V CCTI1PG1BI1SUBINCBI2PG2TI2GNDV DD1TO2BO2V DD2bV sbI/OOOOIIIIIIIOOGroundV Hpower supplyThree-level pulseoutputTwo-level pulse outputV Mb(Two-level driver)power supplyV HH(for SUBdrive)power supplyTwo-level driverinput(See Functionstable onp.4)VODshutterdrivepulseinputNon connectTwo-level driverinput(See Functionstable onp.4)Three-level driverinput(See Functionstable onp.4)Pin FunctionVODshutterdrivepulseoutputVL powersupplyTwo-level pulseoutputV Ma(Three-level driver)power supplyThree-level pulseoutputLogic powersupplyThree-level driverinput(See Functionstable onp.4)3?PD16510FUNCTIONSV L=V SS,V Ma=V DD2a,V Mb=V DD2b,VH=V DD1,V HH=V sbPinTO1InputTI1LLHHPG1LHLHV HV MaV LOutput(TO1)TI2LLHHPin TO2InputPG2LHLHV HVMaV LOutput(TO2)Pin BO1InputBI1LHV MbVLOutput(BO1)Pin BO2InputBI2LHV MbVLOutput(BO2)Pin SUBOInputSUBILHVHHV LOutput(SUBO)Usage CautionBecausethe?PD16510containsaPN junction(diode)between VDD2V DD1,if thevoltage isV DD2V DD1,anabnormal currentwill result.Therefore,apply powerin thesequence VDD1V DD2,or applypower simultaneouslyto V DD1and V DD2.4?PD16510ELECTRICAL SPECIFICATIONSABSOLUTEMAXIMUM RATINGS(Unless otherwisespecified,TA=25?C,GND=0V)ParameterPower supplyvoltagePower supplyvoltagePower supplyvoltagePower supplyvoltageInput voltageOperatingambient temperatureStoragetemperaturePower dissipationSymbolV CCV DD1V DD2V sbVIT ATstgP dT A=85CConditions RatingV SS0.3to V SS+20.0V SS0.3to V SS+33.0V SS0.3to V SS+33.0V SS0.3to VSS+33.0VSS0.3to V CC+0.325to+8540to+125260UnitVVVVVCCmWCaution Exposure to AbsoluteMaximum Ratingfor extendedperiods mayaffect devicereliability;exceeding theratings couldcause permanentdamage.The parametersapply independently.REMENDED OPERATINGCONDITIONS(T A=25?C,GND=0V)ParameterPower supplyvoltagePower supplyvoltagePower supplyvoltagePower supplyvoltagePower supplyvoltagePower supplyvoltagePower supplyvoltageInput voltage,highInput voltage,lowOperating ambienttemperatureSymbolV CCV DD1V DD1V SSV DD2aV DD2bV SSV sbV SSVIHV ILT A0.8V CC020NoteNoteNoteConditions MIN.2.010.520.51.01.010.015.0TYP.MAX.5.521.031.0+4.0+4.06.031.0V CC0.3VCC+70UnitVVVVVVVVVote Setthe valuesof V DD1and VSS toconform to V DD1VSSspecification value.5?PD16510ELECTRICAL CHARACTERISTICS(Unless otherwisespecified,VDD1=+15V,V DD2a=0V,V DD2b=+1.0V,V sb=+21.5V,VCC=+2.5V,VSS=7.0V,TA=25C,GND=0V)ParameterOutput voltage,highOutput voltage,middleOutput voltage,middleOutput voltage,lowOutput voltage,sub highOutputvoltage,sub lowOutputON resistanceOutputON resistanceOutputON resistanceOutputON resistanceTransmission delay time1Transmission delaytime2Transmissiondelaytime3Rise/Fall time1Rise/Fall time2Rise/Fall time3Consumption CurrentConsumption CurrentConsumptionCurrentConsumptionCurrentConsumption CurrentSymbolVHVMaVMbV LVsubHV subLRLR MRHR subT D1T D2T D3T P1T P2T P3I CCIDD2aI DD2bl DD1I sbSee Figure1.Output LoadCircuit.See Figure3.Input Waveform.0.53.03.01.51.2See Figure1.Output LoadCircuit.SeeFigure2.Timing Chart.No load,see Figure2.Timing Chart.I O=20?AI O=20?AI O=10mAI O=10mAI O=10mAI O=20?AI O=20?AConditions MIN.V DD10.1VDD2a0.1VDD2b0.1VSS+0.1Vsb0.1VSS+0.120303030TYP.MAX.VDD1VDD2aV DD2bV SSVsbV SS30454040xx00xx00500xx.05.05.03.01.8UnitVVVVVV?nsnsnsnsnsnsmAmAmAmAmAFigure1.Output LoadCircuit2000pF1000pFTO13000pF1000pFBO12000pF2000pFBO23000pFTO22000pFSUBO1600pF6?PD16510Figure2.Timing ChartBI1,BI2TI1,TI2T D1T D1V MbBO1,BO2V MaTO1,TO2V LT P1T P1PG1,PG2T D2T D2V HTO1,TO2V MaT P2TP2SUBIT D3TD3V HHSUBOVLT P3TP37?PD16510Figure3.Input WaveformInputpulse timingdiagram?63.5s?2s?127sTl2Tl1Bl1Bl2PG1?2.5sPG2?63.5s?2s?2.5s16.7msSUBIOverlap sectionenlarged diagramTl1Bl1Tl2Bl4.9?s8?PD16510APPLICATION CIRCUITEXAMPLEV SSV CCVsbV DD1V SUB(substrate voltage)CCD0.1F?SUB10.1F?234SSG5SUBTGV1V2V3V489PG1Bl1PG2Bl2NC1312110.1F?67V CCTl1TO1SUBOV SSBO1VDD2aV sbVDD2bBO2TO2200.1F?19V11817160.1F?GNDTl21514V2V3V4VDD11M?PD1651010SUBI9PACKAGE DRAWING20PIN PLASTICSHRINK SOP(225mil)xx110AGFENCBDMMNOTEEach leadcenterline islocated within0.10mm(0.004inch)of itstrue position(T.P.)at maximummaterial condition.10?PD16510detail oflead endPHIJLITEMMILLIMETERS INCHESA7.00MAX.0.276MAX.B0.575MAX.0.023MAX.C0.65(T.P.)0.026(T.P.)D0.22+0.100.050.009+0.0040.003E040.004F1.45MAX.0.057MAX.G45+0.0050.004H520.008I73+0.0050.004J1.00.20.039+0.0090.008K0.15+0.100.050.006+0.0040.002L20+0.0080.009M0.100.004N0.100.004P3?+7?3?3?+7?3?P20GR-65-225C-1K?PD16510REMENDED SOLDERINGCONDITIONSWhen solderingthis product,it ishighly remendedto observethe conditionsas shownbelow.If othersolderingprocesses areused,or ifthe solderingis performedunder differentconditions,please makesuretoconsult withoursales offices.For moredetails,refer toour document“SEMICONDUCTOR DEVICEMOUNTING TECHNOLOGYMANUAL”(C10535E).Surface mountdevice?PD16510GR-8JG:20-pin plasticshrink SOP(225mil)ProcessInfrared rayreflowConditionsPeak temperature:235C orbelow(Package surfacetemperature),Reflow time:30seconds orless(at210C orhigher),Maximum numberof reflowprocesses:3times.Peak temperature:215C orbelow(Package surfacetemperature),Reflow time:40seconds orless(at200C orhigher),Maximum numberof reflowprocesses:3times.Solder temperature:260C orbelow,Flow time:10seconds orless,Maximum numberof flowprocesses:1time,Pre-heating temperature:120C orbelow(Package surfacetemperature).Pin temperature:300C orbelow,Heat time:3seconds orless(Per eachside ofthe device).SymbolIR35-00-3VPS VP15-00-3Wave solderingWS60-00-1Partial heatingmethodCaution Applyonly onekind ofsoldering conditionto a device,except for“partial heatingmethod”,or thedevicewill bedamaged byheat stress.11?PD16510MEMO12?PD16510MEMO13?PD16510MEMO14?PD16510NOTES FORCMOS DEVICES1PRECAUTION AGAINSTESD FORSEMICONDUCTORSNote:Strong electricfield,when exposedto aMOS device,can causedestructionof thegate oxideand ultimatelydegrade the device operation.Steps mustbe taken tostop generationof staticelectricity asmuch aspossible,andquickly dissipateit once,when ithas ourred.Environmental controlmustbe adequate.When it is dry,humidifier shouldbe used.It isremendedto avoidusing insulatorsthat easilybuild staticelectricity.Semiconductordevices must be storedand transportedin ananti-static container,staticshielding bagor conductivematerial.All test and measurementtoolsincluding workbench andfloor shouldbe grounded.The operatorshouldbe groundedusing wriststrap.Semiconductor devicesmust notbe touchedwithbare hands.Similar precautionsneed tobetakenfor PWboards withsemiconductor devices onit.2HANDLING OFUNUSED INPUTPINS FORCMOSNote:No connection for CMOS device inputscanbecause ofmalfunction.If noconnectionis providedto theinput pins,itispossible thatan internalinputlevel maybe generateddue tonoise,etc.,hence causingmalfunction.CMOSdevice behavedifferently thanBipolar orNMOS devices.Input levelsofCMOS devicesmust befixed highor lowby usinga pull-up orpull-downcircuitry.Each unusedpin shouldbe connectedtoVDD orGND witharesistor,if itis consideredto havea possibilityof beingan outputpin.Allhandling relatedto theunused pinsmust bejudged deviceby deviceandrelated specificationsgoverning the devices.3STATUS BEFOREINITIALIZATION OFMOS DEVICESNote:Power-on does not necessarilydefine initialstatus of MOSdevice.Produc-tion processofMOSdoes notdefine theinitial operationstatus ofthedevice.Immediately afterthe powersource isturned ON,thedeviceswith resetfunctionhave notyet beeninitialized.Hence,power-on doesnot guaranteeout-pin levels,I/O settingsor contentsof registers.Device is not initializeduntilthe resetsignal isreceived.Reset operationmustbeexecuted imme-diately afterpower-onfordevices havingreset function.15?PD16510MEMOThe applicationcircuits andtheir parametersare forreference onlyand arenot intendedfor usein actualdesign-ins.No partof thisdocument maybe copiedor reproducedin anyform orby anymeans withoutthe priorwrittenconsent ofNEC Corporation.NEC Corporationassumes noresponsibility for any errorswhich mayappear inthisdocument.NEC Corporationdoesnotassume anyliability forinfringement ofpatents,copyrights orother intellectualpropertyrights ofthird partiesby orarising fromuse ofadevicedescribed hereinoranyother liabilityarising fromuseof suchdevice.No license,either express,implied orotherwise,is grantedunder anypatents,copyrights orotherintellectual propertyrights ofNEC Corporationor others.While NECCorporation hasbeen makingcontinuous effortto enhancethe reliabilityof itssemiconductordevices,the possibilityof defectscannot beeliminated entirely.To minimizerisks ofdamage orinjury topersons orpropertyarising froma defectin anNEC semiconductordevice,customers mustincorporate sufficientsafetymeasures inits design,such asredundancy,fire-containment,and anti-failure features.NEC devicesare classifiedinto thefollowing threequality grades:Standard,Special,andSpecific.The