EDL论文附件1-论文标准格式

REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER DOUBLE CLICK HERE TO EDIT REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER DOUBLE CLICK HERE TO EDIT REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER DOUBLE CLICK HERE TO EDIT REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER DOUBLE CLICK HERE TO EDIT 4 silicides Appl Phys A vol 40 no 2 pp 71 77 Jun 1986 Applied Physics A 7 L P B Lima et al Titanium nitride as electrode for MOS technology and Schottky diode Alternative extraction method of titanium nitride work function Microelectron Eng vol 92 pp 86 90 Apr 2012 Microelectronic Engineering 8 M Wittmer TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devices Appl Phys Lett vol 36 no 6 pp 456 458 Mar 1980 Applied Physics Letters 9 M Wittmer Properties and microelectronic applications of thin films of refractory metal nitrides J Vac Sci Technol A vol 3 no 4 pp 1797 1803 Jul 1985 Journal of Vacuum Science Technology A 10 S Deevi and Z A Munir The mechanism of synthesis of titanium nitride by self sustaining reactions J Mater Res vol 5 no 10 pp 2177 2183 Oct 1990 Journal of Materials Research 11 P Masson G Ghibaudo J L Autran P Morfouli and J Brini Influence of quadratic mobility degradation factor on low frequency noise in MOS transistors Electronics Lett vol 34 no 20 pp 1977 1979 Oct 1998 Electronics Letters 12 Z Celik and T Y Hsiang Study of 1 f noise in N MOSFET s Linear region IEEE Trans Electron Devices vol 32 no 12 pp 2797 2802 Dec 1985 IEEE Transactions on Electron Devices 13 Y Nemirovsky D Corcos L Brouk A Nemirovsky and S Chaudhry 1 f noise in advanced CMOS transistors IEEE Instrum Meas Mag vol 14 no 1 pp 14 22 Feb 2011 IEEE Instrumentation Measurement Magazine 上面列举了一些我碰到的期刊的缩写及格式 碰到一些不常见的可以到 论文中去查找该论文的引用格式 如文献 13 1 在谷歌学术中检索该论文 发现该文献曾经被引用过