半导体材料ppt课件.ppt

1,Semiconductormaterials,Lecturer:AiminLiu&WeifengLiu,2,半导体材料及器件工艺技术（四）,1喷雾热解成膜技术2CVD成膜技术低压CVD、常压CVD、离子增强型CVD、MOCVD3扩散及阳极氧化技术,3,超声喷雾热分解装置示意图,4,5,6,7,CVD薄膜生长,8,CVD炉体设计,9,CVDSYSTEM,10,11,12,GasFlowControl,RegulatorFlowmeterMassflowcontroller,13,CVD爐管內的氣流,14,CVD化学反应,DisproportionationirreversibleAsCl3(g)3Ga(s)3GaCl(g)1/4As4(g)3GaCl(g)1/2As4(g)2GaAs(s)GaCl3(g)Disadvantages:multizonefurnacelowgasflowlowreactionefficiency(nj,74,半导体材料及器件工艺技术（四）,1喷雾热解成膜技术2CVD成膜技术低压CVD、常压CVD、离子增强型CVD、MOCVD3扩散及阳极氧化技术,75,CVD薄膜生长,76,CVD化学反应,PyrolysisirreversibleHydridereaction,SiH4(g)Si(s)2H2(g)Metal-organicreactionMOCVD(CH3)3Ga(g)AsH3(g)GaAs(s)3CH4(g)Advantages:lowgrowthtemperaturecoldwallreactorDisadvantage:chemicalpurityandcost,77,CVD化学反应,DisproportionationirreversibleAsCl3(g)3Ga(s)3GaCl(g)1/4As4(g)3GaCl(g)1/2As4(g)2GaAs(s)GaCl3(g)Disadvantages:multizonefurnacelowgasflowlowreactionefficiency(66%)systemcontamination(hotwall),78,Plasma-EnhancedCVD,79,半导体材料及器件工艺技术（五）,1刻蚀技术化学刻蚀、离子刻蚀、反应离子刻蚀2半导体材料及器件的测试,80,RF-poweredplasmaetchsystem,RF-poweredplasmaetchsystem,81,PhysicalEtching,Notveryselectivesinceallmaterialssputterataboutthesamerate.Physicalsputteringcancausedamagetosurface,withextentandamountofdamageadirectfunctionofionenergy(notiondensity).,IonEnhancedEtching,Thechemicalandphysicalcomponentsofplasmaetchingdonotalwaysactindependently-bothintermsofnetetchrateandinresultingetchprofile.FigureshowsetchrateofsiliconasXeF2gas(notplasma)andAr+ionsareintroducedtothesiliconsurface.Onlywhenbotharepresentdoesappreciableetchingoccur.Etchprofilescanbeveryanisotopic,andselectivitycanbegood.,Noplasma,sputtering,SILICONVLSITECHNOLOGYFundamentals,PracticeandModelingByPlummer,Deal&Griffin,2000byPrenticeHallUpperSaddleRiverNJ,82,Etchantsandetchproducts,83,Plasmaassistedetching,PlasmaassistedetchingsequenceTakeamoleculargasCF4EstablishaglowdischargeCF4+eCF3+F+eRadicalsreactwithsolidfilmstoformvolatileproductSi+4FSiF4Pumpawayvolatileproduct(SiF4),84,（六）代表性的几种半导体材料特性及表征技术,Elementalsemiconductor-Si,GeCompoundsemiconductorIV-IV-SiSiCIII-V-GaAs,GaSb,InP,InAs,II-VI-ZnO,ZnS,ZnSeAlloysBinary-Si1-xGexTenary-AlGaAs,AlInAs,Quaternary-AlGaAsSb,85,表征方法1.霍尔效应测试2.X射线衍射方法（XRD）3.光致发光谱（PL）4.X射线光