认识光罩以及简要的工艺流程

认识Mask以及简要的制作流程,TM,TheRoleofMaskinICIndustry,DESIGN,MASK,WAFER,TESTING,ASSEMBLY,HowDoesMaskWorkinWaferFAB,-Stepper,HowDoesMaskWorkinWaferFAB,-Scanner,RawMaterialofMask,Blank,BIM(binarymask)PSM(phaseshiftmask)A.KRF-PSMB.ARF-PSM,SizeofBlank,5inch90mil(5009)5inch180mil(5018)6inch120mil(6012)6inch250mil(6025)7inch250mil(7015),WhatkindofmaskSMICFABsuse?,BlankComponent,BinaryBlank,PSMBlank,PhotoResist(3K,4K,4650A),CrO&Chrome(1050A,700A),Quartz,PhotoResist(2K,3K,4KA),CrO&Chrome(1000,550A),Quartz,MoSiFilm,PhotoResistOpaqueMetalFilmSubstrate,PhotoResistOpaqueMetalFilmPhaseShiftLayerSubstrate,BlankQzCharacteristic,Rigidity,HeatExpansion(ppm/oC),BlankQzCharacteristic,OpticsCharacter,Transmission(%),200,300,400,0,20,40,60,80,100,Quartz,Silicon-Boride,SodaLime,WaveLength(nm),ThatswhywechooseQuartzasthesubstrateofblank,HowtoTransferDesigntoMask?,Writer,Process,Metrology,Vis-Inspect,Clean/Mount,AIMS,Repair,1stInspect,Thr-Inspect,STARlight,Shipping,Develop,Strip,Etch,Front-endProcess,Blankconfiguration,Photo-resist,Crfilm,Quartz,Exposure,Photo-resistdevelop,Wetetch,Photo-resiststrip,AEI,ASI,Re-Etch?,AEI:AfterEtchCDmeasureASI:AfterStripCDmeasure,Step1,Step2,Step3,Step4,Step6,Step5,Step7,Front-endProcess,Dryprocess,Resist,Cr,Qz,H+,H+,H+,H+,H+,H+,H+,Exposure(EB1,EB2,EB3DUV,LB5,LB6),PEB(PostExposureBake)SFB2500,APB5500,PAG,Acidgeneration,Aciddiffusion,Deprotectionreaction,Development(SFD2500,ASP5500),H+,DryEtch(Gen3,Gen4)AEI,Re-etch,Strip,ASI,PellicleComponent,PellicleMembrane,Frame(AluminumAlloy),AdhesiveTape,PellicleMembrane(25um),PellicleFrame,DoubleSideAdhesiveTape,Cr,Glass,WhatPellicleDo?,ParticleImmunityControl,Particlesize(D)V.S.MinimumStand-off(T),T=(4M/N.A.)D,M-MagnificationN.A.-NumericalApertureoftheLens,Forglasssideparticle,T=2.3mm,D1,T1,T2,D2,MaskQualityControl,C.D.DefectRegistration,CD(criticaldimension)measurement,DefectType,HardDefectSoftDefect,MissSize,HowtoDoMaskDefectInspect,MaskLayoutExemplification,Normal,+,+,+,+,Fiducial,TestKey,TestLine,MainPattern,ScribeLine,GlobalMark,QACell,Barcode,Multi-Chip,+,+,+,+,Fiducial,TestKey,TestLine,ScribeLine,GlobalMark,QACell,+,+,AChip,BChip,CChip,DChip,+,ThePrincipleofSTARlightInspect,TheModelinSMICMaskShop(SL3UV)canonlydetectpatternside,STAR:SynchronousTrans.AndReflected,WhatisRegistration,RegistrationResultExemplification,Mask:6”,t=0.25”QuartzMeasurementArea:67.2*92.2mmArray:8*10VariationQuantity:nmMaxminX7.20.0Y22.00.2,HowDoesOPCWork?,comparison,design/mask,WithOPC,wafer,OPCPatternonMask,0.64umLinePattern,0.25umSeriffor0.6umContact,0.57LinePattern,0.27umassistantbarfor0.72umLine,Over-allflow,Customer,FTP,Note:Yellowboxisactivitiescusto