Power-MOSFETPPT课件

PowerMOSFETTechnology,ProductTechnologyDivisionMOSELVITELICINC.,-,2,TableofContents,PowerProductOverviewPowerProductMarketandApplicationPowerMOSFETTechnologyMoselFoundryServiceSummary,-,3,PowerProductOverview,“SemiconductorCategory“,Semiconductor,Optoelectrons,Discrete(7%),IC(84%),Sensors(3%),DigitalIC(85%),AnalogIC(15%),(Memory,Logic,Micro-),PowerProduct,“PowerProductCategory“,Discrete,AnalogIC,Diodes,Transistor,Thyristor,Rectifier,.PowerMOSFET.Bipolar.IGBT,SLAI(40%)(StandardLinearAnalogIC),ASAI(60%)(ApplicationSpecificAnalogIC),.Amplifier.VoltageRegulator.DataConversion.Interface,.Telecom.Automotive.Consumer.Computer,(50%),“PowerManagementProductCategory“,PowerManagement,PowerMOSFET(PowerSupply2.2nm1kVMagnification:25XTo650,000XAcc.Voltage:0.5kVTo30kV(in0.1kVstep)SampleSize:40mm(diameter)x30mm(height)MovementRange:X/Y/Z=70mm/50mm/1.525mmTilt:-5o60o/Rotation:0o360o,-,77,SEM/EDSAnalysis,Lead-FreeProjecttoAnalyzeSn/Ag/Cu/PbSecondaryElectronImage,100%,8970.54,Totals,0.14,22.15,Pb,M,97.96,8823.43,Sn,L,0.99,80.67,AgL,0.92,44.29,CuL,Atomic%,Weight%,Element,100%,8970.54,Totals,0.14,22.15,Pb,M,97.96,8823.43,Sn,L,0.99,80.67,AgL,0.92,44.29,CuL,Atomic%,Weight%,Element,Sample#Pb,-,78,VGMicroLab350,FE-AES,Resolution:image:12nm25kVenergy:0.022.0%Magnification:200XTo500,000XAcc.Voltage:0.5kVTo25kVSampleSize:38mm(diameter)x8mm(height)MovementRange:X/Y/Z=9mm/6mm/+5-15mmTilt:-20o90o/Rotation:0o360o,Surface-sensitivespectroscopictechniqueusedforelementalanalysishighsensitivityforallelementsexceptHandHemonitoringmethodforsurfacecleanlinessofsamplequantitativecompositionalanalysisofsamplesurfaceregion,-,79,ISTFE-AESAnalysis,Padsize:45um2,IncidentBeamEnergy:10keV.IonBeamEnergy:1keV/1uA.EtchingRate:0.1nm/sec.EnergyResolution:CRR=10(0.1eV).,-,80,JOELJEM-2100F,Microstructure:latticeimagePhase:amorphous/poly/singlecrystal,stoichiometryCrystallinedefect:substratedefect,inducedbyimplantation/process,Resolution:latticeimage0.1nm,pointimage0.19nmMagnification:50XTo1,500,000XAcc.Voltage:80kVTo200kVCameraLength80-2000mmSampleSize:3mmindiameterMovementRange:X/Y/Z=2mm/2mm/0.1mmTilt:25o,TEM,-,81,TEMAnalysis,(a)TEMinspectioninCudual-damasceneprocess(b)HighResolutionTEMformeasurementofnano-meterlevel(c)Gatelength(90nm)measurementandstructureobservation(d)Sisubstratedislocationobservationbyplan-viewTEM,(a),(b),(c),(d),-,82,M2-Al,M3-Cu,M4-Cu,M2-Al,TEM/EDSAnalysis,M1-Al,M1-Al,M3CufastdiffusiontoM2wasfound,asshowninEDX/mappingfigure,EDX/mappig,-,83,ProtocolrecentlydevelopedforshallowarsenicimplantsHighdepthresolutionRepeatprofileswith2%standarddeviationHighprecisionallowsimplantercomparisons,HighPrecisionImplantCharacterization,SIMS,-,84,SIMScrater,ReverseEngineeringofLED(III-V),-,85,LEDStructureAnalysis,-,86,PrecisionCut:specificlocation,particle,via/contactX-imagesSamplepreparation:TEM,SEM,specialrequestMicrosurgery:circuitrepair,artificialpad,dielectricbuffer,AccelerationVoltage:30kVSecondaryElectronResolution:5nmMaximumProbeCurrentDensity:20A/cm2MaximumProbeCurrent:20nAObservationField0.5X0.5um22.4X2.4mm2ScanRotation:0359.9o/0.1ostepSamplesize:50mmSquare,Thickness12mm,FIB,SIISMI2050,-,87,Cfilm,Cu,Ni,Au,FIBAnalysis,FIBprecisioncutforobservationinspecificstructure,-,88,FIBAnalysis,TEMsamplepreparationbyFIBlift-offmethod,-,89,Holesizeisabout100nmPlugwidthisabout350nm,TXMAnalysis(TransmissionX-rayMicroscopy),Non-destructiveexamination,-,90,CaseStudy,-,91,ThankYou,成份分析微區分析AES,EELS/TEM,EDS/TEM,EDS/SEM表面分析AES,SIMS,XPS薄膜分析RBS,EDS/TEM,EDS/SEM化學態分析XPS,AES,FTIR,EELS/TEM結構觀察表面形貌OM,SEM微區結構TEM,SEM,FIB晶格結構TEM雜質分析掺