WAT-TrainingPPT课件

IntroductionofWATTestSystem,Outline,WhatisWATTestPatternHardwareSystemSoftwareSystemTestParameter,WATstandardfor,WaferAcceptanceTest,WhatisWAT?,Whatkindofwork?,Anelectricaltestsystem,non-productivityactivityWATisanelectricaltestsystemforprocessgoodnessmonitor.Devicecharacteristics:resistor,capacitor,interconnection,continuity,spacing,insulation,leakageWATistheprimaryqualityelementforafoundryFAB(thequalityassuranceforwaferoutput)WATcharacteristics:DCforceandmeasurement,Automation,highthroughput,precision,sampling,WhatisWAT?,WhyWAT,MonitorProcessWindow.CheckDesignRule.ControltheProcessParameters(SPC).DebugtheProcessError.ReliabilityCharacterization.DeviceModelingforCircuitDesign.DevelopnextGeneration.,WhatisWAT?,TestPattern,Testkey:WATjustteststheTestKeysomewasputinsidechip,fordesignrulecheck,yieldmonitorandprocessqualificationanddevelopment.somewasputonscribeline.Thesetestkeywillbedestroyedafterdiesaw.,SiteVia1:0.26um,enclosure0.06for0.18technology,RC_N+CT_V1:(1800Counts)VD=1.8V,VB=0VMeasure:ID,thenRC_N+CT_V1=(VD/ID900*RS_N+_2/100)/1800,TestParameter,Continuity/BridgingTeststructuretype:N+AAopen-shortpatternN+Polyopen-shortpatternMetal-1open-shortpatternN+GatetoS/DshortpatternTestparameters:CONTI_N+_0.22,CONTI_N+P1_0.18,CONTI_P+_0.22,CONTI_P+P1_0.18,CONTI_M1_0.23,CONTI_M2_0.28,CONTI_M3_0.28,CONTI_M4_0.28,CONTI_M5_0.28,CONTI_M6_0.44IBRI_N+N+_0.28,IBRI_N+P1_0.25,IBRI_P+P+_0.28,IBRI_P+P1_0.25,IBRI_M1_0.23,IBRI_M2_0.28,IBRI_M3_0.28,IBRI_M4_0.28,IBRI_M5_0.28,IBRI_M6_0.46,ILBRI_P1N+,ILBRI_P1P+BVBRI_N+N+_0.28,BVBRI_N+P1_0.25,BVBRI_P+P+_0.28,BVBRI_P+P1_0.25,BVBRI_M1_0.23,BVBRI_M2_0.28,BVBRI_M3_0.28,BVBRI_M4_0.28,BVBRI_M5_0.28,BVBRI_M6_0.46BVBRI_P1N+,BVBRI_P1P+,TestParameter,KELVINResistanceIncludedinthispatternmeasurementofthecontactchainresistanceisalsotheresistanceoftheinterconnectionline.Inordertomeasuretheexactcontactresistance,aKELVINresistancepatternisused.MeasurementTheory.Thecurrentforcedthroughlayer1flowsthroughlayer2throughthecontacthole.ThetotalresistanceisR1+R2+RC.SoKelvinResistanceRwillbe:R=(V1-V2)/I,TestParameter,N+AAopen-shortpatternPurpose:TomonitorN+AAbridgeandcontinuityDesign:L/S=0.22/0.28,patternlength70X41for0.18technology,CONTI_N+_0.22:ID=0.1mA,Measure:ID,thenCompute:Rs=VD/IDIBRI_N+N+_0.28:VD=1.1*1.8V,VB=0VMeasure:IBRI=IDBVBRI_N+N+_0.28:VB=0V,RampupVD,WhenID=1uA,MeasureBVBRI=VD,TestParameter,N+GatetoS/Dshortpattern(N+gatetoS/Dbridgewithspacerlength1000A)Purpose:TomonitorN+gatetoS/DbridgeDesign:W/S=0.8/10,Length=5.86*10for0.18technology,ILBRI_P1N+:VD=1.1*1.8V,VB=0VMeasure:IlBRI=IDBVBRI_P1N+:VB=0V,RampupVD,WhenID=1uA,MeasureBVBRI=VD,TestParameter,MILLERCapacitance.Thereisaparasiticcapacitancebetweenthegateandthesourcedrainjunction.ThiscapacitanceiscalledtheMillerCapacitance.Dur