Michael quirk_半导体制造技术_第二章_半导体材料特性.ppt

,SemiconductorManufacturingTechnologyMichaelQuirk&JulianSerdaOctober2001byPrenticeHallChapter2CharacteristicsofSemiconductorMaterials,Objectives,Afterstudyingthematerialinthischapter,youwillbeableto:1.Describetheatom,includingvalenceshell,bandtheoryandions.2.Interprettheperiodictablewithregardstomaingroupelementsandexplainhowionicandcovalentbondsareformed.3.Statethethreeclassesofmaterialsanddescribeeachonewithregardstocurrentflow.4.Explainresistivity,resistance,capacitanceanddiscusstheirimportancetowaferfabrication.5.Describepuresiliconandgivefourreasonswhyitisthemostcommonsemiconductormaterial.6.Explaindopingandhowthetrivalentandpentavalentdopantelementsmakesiliconausefulsemiconductormaterial.7.Explainp-type(acceptor)siliconandn-type(donor)silicon,howsiliconresistivitychangeswiththeadditionofadopant,andthePNjunction.8.Discussalternativesemiconductormaterials,withemphasisongalliumarsenide.,AtomicStructure,MatterElementNucleusProtonNeutronOrbitalShellElectronMoleculeCompound,ElectronsElectronEnergyValenceShellsEnergy-BandTheoryIons,ElementaryModeloftheCarbonAtom,Figure2.1,ElectronShellsinAtoms,Figure2.2,ElectronShellsforSodiumandChlorineAtoms,Figure2.3,EnergyBandGaps,Figure2.4,SodiumChloride,Figure2.5,ThePeriodicTable,CharacteristicsofCommonlyUsedElementsIonicBondsCovalentBonds,ThePeriodicTableoftheElements,Figure2.6,ElementBoxofthePeriodicTable,Figure2.7,CharacteristicsofChemicalsusedinWaferFabrication,Continuedonnextslide,Table2.1,CharacteristicsofChemicalsusedinWaferFabrication(continued),Table2.1,IonicBondforNaCl,Figure2.8,CovalentBondforHCl,Figure2.9,ClassifyingMaterials,ConductorsInsulatorsSemiconductors,ElectricalCurrentFlow,Figure2.10,Copperatom,FlowofFreeElectronsinCopper,Figure2.11,HowSizesAffectResistance,Figure2.12,AddinganImpuritytoWatertoImproveitsConductivity,Figure2.13,BasicCapacitorStructure,K,dielectricconstantinfarads/cmA,plateareaincm2S,spacingbetweenplatesincm,Figure2.14,BatteryChargesaCapacitor,Figure2.15,CapacitorHoldsaCharge,Figure2.16,Low-kDielectricMaterial,Figure2.17,Silicon,PureSiliconWhyUseSilicon?DopedSiliconDopantMaterialsn-typeSiliconp-typeSiliconResistivityofDopedSiliconpnJunctions,GroupIVAElementalSemiconductors,Figure2.18,CovalentBondingofPureSilicon,Figure2.19,SiO2onSiliconWafer,Figure2.20,DopingofSilicon,Figure2.21,SiliconDopants,Figure2.22,ElectronsinN-TypeSiliconwithPhosphorusDopant,Figure2.23,Conductioninn-TypeSilicon,Figure2.24,Holesinp-TypeSiliconwithBoronDopant,Figure2.25,Conductioninp-TypeSilicon,Figure2.26,SiliconResistivityVersusDopantConcentration,RedrawnfromVLSIFabricationPrinciples,SiliconandGalliumArsenide,JohnWiley&Sons,Inc.,Figure2.27,CrossSecti