wafer工艺流程

CZ6Basicflowintroduction,Page17,ProcessFeature,CZ6Hprocess(1P3M)+optionlayer(MECAP,R-poly,CodeP)0.45umLV(5V)logictechnologyCZ6HOTP(onetimeprogram)process(1P3M)+optionlayer(MECAP,R-poly)0.45umLV(5V)logictechnologyRecessLOCOS(700A)Polycideex-situPolyPOCl3Diffusion1500A+WSI1750A12/Ti-silicideProcessMetal1(4500Al/100Ti/300TiN),Metal2/3(6200Al/100Ti/300TiN),Metal4(9000Al/100Ti/300TiN),TTOPME(30000Al/100Ti/300TiN)MIPmodule(0.78fF/um2),HTO400ARPOLY(500ohm/squareexsitu-Poly)module,1K,2K,5KdevelopedPassivation:CZ6H:1200TEOS+10KSION+PolyimideCZ6HOTP:1200TEOS+10KUVSION,Page17,1.WAFERSTART2.OXIDEWETETCH(LAL800;3MIN;S/D)-removenativeOX3.AA_OXTOX(900C;210A)-PADOXtobufferNitridestress4.AANITRIDEDEP(760C;1500A4000LOCOS)-SuppressOXlateraldiffuseLOCOSgrown5.AAPHOTO6.AASINETCH7.PRASH(250C)8.PRSTRIP(SPM+CAPM;NORMAL)9.FIELDOXIDATION(1100C;4000A)10.OXIDEWETETCH(DHF;200A)11.SINWETETCH(65MIN)12.OXIDEWETETCH(LL130;2MIN)13.SAC0_OX(900C;210A)-protectSisurfacefromPRcontaminationandserveasscreenOXwhenN/PwellIMP,PSUB,PSUB,LOCOS,Page17,PSUB,5.PW_PH6.PW_IMPPWELLIMPLANT1B300K100E3A63B32R00(WellForm)PWELLIMPLANT2B120K350E2T07W23R00(ChannelStop)PWELLIMPLANT3B070K150E2T07W23R00(APTIMP)PWELLIMPLANT4B030K175E2T07W23R00(VTadjust)7.PRASH8.PRSTRIP(SPM+CAPM;NORMAL),1.NW_PH2.NW_IMPNWELLIMP1P700K150E3A63B32R00(WellForm)NWELLIMP2P260K120E2T07W23R00(ChannelStop)NWELLIMP3P150K150E2T07W23R00(APTIMP)NWELLIMP4B015K185E2T07W23R00(VTadjust)3.PRASH4.PRSTRIP(SPM+CAPM;NORMAL),PSUB,NWELL,PWELL,PWELL,Page17,1.OXIDEWETETCH(LL130;90SEC)2.GATEOXIDATION(850C;155A)8.CAPTOPWSIDEP(SPUTTER:2000A)3.GATEPOLYDEP(620C;1500A;O2LEAK)9.CAPTOPOXIDEDEP(APOX;1200A4.PHOSPHORUSDIFFUSION10.CAPPHOTO5.PSGREMOVE(LL1304MIN+H2O24MIN)11.CAP_ET6.GATEWSIDEP(SPUTTER:1750A)12.CAPPRASH7.HTODEP(400A)13.PRSTRIP(SPM+HAPM;SILICIDE),PSUB,PSUB,NWELL,PWELL,PWELL,MCAP,Page17,14.P1PHOTO15.POLYETCH16.NLDDIMPLANT,PSUB,PSUB,NWELL,PWELL,PWELL,NMOS,Page17,PSUB,PSUB,NWELL,PWELL,PWELL,1.PLDDPHOTO2.PLDDIMPLANT3.PRSTRIP4.SPACERDEP(NSG;2000A)5.ANNEAL(950C;30M)6.SPACERETCH7.SAC3OXIDEDEP,Page17,PSUB,PSUB,NWELL,PWELL,PWELL,1.NP_PH3.NP_IMPN+IMPLANT1P100K280E3T45W23R12N+IMPLANT2P040K120E4T00W23R00N+IMPLANT3A070K200E5A00B004.PRSTRIP(SPM;SILICIDE),5.PP_PH6.PP_IMPP+IMPLANT1B030K200E3T00W23R00P+IMPLANT2F050K500E5A00B007.PRSTRIP(SPM;SILICIDE)8.ANNEAL(850C;50M),Page17,CODE_PH6.SALICIDESPUTTER(TI330A)CODEIMPLANTP360K300E3A00B00R007.RTA(700C;30S)PRSTRIP(SPM;SILICIDE)8.BRANSONTREATMENT(CAPM)PREAMORPHOUSIMPLANT9.RTA(840C;10S)OXIDEWETETCH(LAL30;3MIN10SEC;SILICIDE)10.BRANSONTREATMENT(CAPM),PSUB,PSUB,NWELL,PWELL,PWELL,OTPcell,Page17,ILDOXIDE1DEP(APOX;1500A)7.ILDBPSGDEP(B9.8;P5.4;13700A)POLY2DEP8.PRE-BPSGFLOW(HAPM;SILICIDE)POLY2IMP9.BPSGFLOW(800C;30S)POLY2PHOTO10.SINWETETCH(15MIN)P2ETCH11.SLN244PRECMPO2TREATMENT6.ILDDEP(SIN200A)12.ILDCMP,PSUB,PSUB,NWELL,PWELL,PWELL,RPOLY,Page17,1.CTPHOTO6.CTNP_PH2.CTPHOTOUVCURE7.CTNP_IMPP070K200E5A00B003.CTETCH8.CTNPLUSPRASH(140C)4.PRSTRIP(SPM+CAPM;SILICIDE)9.PRSTRIP(SPM+CAPM;SILICIDE)5.CTPP_IMPF070K500E4A00B0010.RTA(800C;10S),PSUB,PSUB,NWELL,PWELL,PWELL,CT,Page17,PSUB,PSUB,NWELL,PWELL,PWELL,CTGULESPUTTER(TI300A;TIN500A)5.M1DEP(AL4500A;TIN600A)CTGLUEANNEAL(690C;30S)6.M1PHOTOCTWCVDDEP(475C;5000A)7.M1ETCHCTWETCHBACK8.SOLVENTSTRIP(SST-A2;10MIN),Page17,PSUB,PSUB,NWELL,PWELL,PWELL,IMD1DEP1(PETEOS;1200A)IMD1USGDEP(O3TEOS;4000A)IMD1DEP2(PETEOS;17000A)IMD1CMPALLOY(400C;10M;H2-N2),M1,Page17,VIA1PHOTO7.VIA1WCVDDEP(5000A)VIA1ETCH8.CTWETCHBACKVIA1PRASHING(140C)9.M2DEP(TIN600A;AL6200A)SOLVENTSTRIP(N311;10MIN)10.M2PHOTOVIA1GLUELAYERSPUTTER(TI300A;TIN1000A)11.M2ETCHRTA(700C;30S)12.SOLVENTSTRIP(SST-A2;10MIN),M2,Page17,IMD2DEP1(PETEOS;1200A)VIA1ETCH10.VIA2GLUELAYERSPUTTER(RF300;TI300A;TIN1000A)IMD2USGDEP(O3TEOS;4000A)11.VIA2WCVDDEP(5000A)IMD2DEP2(PETEOS;17000A)12.VIA2WETCHBACKIMD2CMP13.TMSPUTTER(TIN600A;6200A)ALLOY(400C;10M;N2)14.TMPHOTOVIA2PHOTO15.TME