Silvaco TCAD 工艺仿真2.ppt

SilvacoTCAD工艺仿真（二）,Tangshaohua,SCU,02:41,1,Silvaco学习,E-Mail:shaohuachnshaohuachn,上一讲知识回顾,熟悉仿真流程,02:41,2,Silvaco学习,1、建立仿真网格2、仿真初始化3、工艺步骤4、抽取特性5、结构操作6、Tonyplot显示,goathenaLinexloc=0.0spac=0.02Linexloc=1.0spac=0.10Lineyloc=0.0spac=0.02Lineyloc=2.0spac=0.20inittwo.dDiffusetime=30temp=1200dryo2extractname=Toxthicknessoxidemat.occno=1x.val=0tonyplotquit,小试牛刀之Diffuse做氧化,优化,这一讲的安排,介绍各个工艺的参数及其意义举例说明这些工艺有：离子注入，扩散，淀积，刻蚀，外延和抛光,02:41,Silvaco学习,3,离子注入,命令implant，参数及说明如下：,02:41,4,Silvaco学习,离子注入的参数及说明,02:41,5,Silvaco学习,离子注入的几何说明：注入面：表面：仿真面：Tiltangle：Rotationangle：,离子注入的例句,02:41,6,Silvaco学习,Implantphosphdose=1e14energy=100tilt=15,Implantborondose=1e13energy=50tilt=0s.oxide=0.005,Implantborondose=1e13energy=300bcatilt=0rotation=0,Analytical注入：,SVDP注入（s.oxide为屏氧厚度）：,MonteCarlo注入：,Implantborondose=1e14energy=50unit.damagedam.factor=0.1,注入损伤：,离子注入的例子,02:41,7,Silvaco学习,goathenaLinexloc=0.0spac=0.02Linexloc=1.0spac=0.10Lineyloc=0.0spac=0.02Lineyloc=2.0spac=0.20initsiliconc.boron=1e16two.dImplantphosphdose=1e13energy=50tilt=7unit.damagedam.factor=0.05extractname=xjxjmaterial=Silicon”mat.occno=1x.val=0.05junc.occno=1tonyplot,抽取得到结深Xj0.267678m,把spac=0.02换成0.1看有什么不同,扩散,命令diffuse，参数及说明如下：,02:41,8,Silvaco学习,扩散的例句,02:41,9,Silvaco学习,Diffusetime=1hourtemp=1000c.boron=1e20,Diffusetime=30temp=1200weto2,Diffusetime=2temp=800t.final=1200nitropress=2Diffusetime=20temp=1200nitropress=2Diffusetime=2temp=1200t.final=800nitropress=2,Diffusetime=1temp=1000nitropress=1.5,磷的预沉积：,湿氧氧化（也可以定义气流）：,变温扩散：,快速热退火（RTA）：,高级的扩散模型：,MethodplsDiffusetime=1hourtemp=950nitroc.phos=1e20tsave=1tsave.mult=10dump.predep=predep,扩散的例子,02:41,10,Silvaco学习,goathenaLinexloc=0.0spac=0.02Linexloc=1.0spac=0.10Lineyloc=0.0spac=0.1Lineyloc=2.0spac=0.20initsiliconc.boron=1e16two.dMethodplsDiffusetime=1hourtemp=950nitroc.phos=1e20tsave=1tsave.mult=10dump.prefix=predeptonyplotpredep*.strtonyplot-overlaypredep*.str,淀积,命令deposit。参数及其说明如下：,02:41,11,Silvaco学习,淀积参数及例句,02:41,12,Silvaco学习,Depositoxidethick=0.1dy=0.01ydy=0.05,Depositoxidethick=0.1div=10,淀积，网格控制：,Depositmaterial=BPSGthick=.1c.boron=1e20c.phos=1e20,淀积BPSG：,Rate.depomachine=MOCVDcvddep.rate=0.1u.mstep.cov=0.75tungstenDepositmachine=MOCVDtime=1minute,淀积，网格控制：,淀积的例子（网格）,02:41,13,Silvaco学习,goathenaLinexloc=0.0spac=0.02Linexloc=1.0spac=0.10Lineyloc=0.0spac=0.02Lineyloc=2.0spac=0.20initsiliconc.boron=1e16two.dtonyplot,Depositoxidethick=0.1dy=0.01ydy=0.05,刻蚀,命令etch，参数有：,02:41,14,Silvaco学习,刻蚀参数及其说明,02:41,15,Silvaco学习,等离子体刻蚀,RIE和湿法刻蚀,刻蚀参数及其说明,02:41,16,Silvaco学习,MonteCarlo等离子刻蚀,参数Isotropic只是一个速率，等方向性的速率。,简单的例句,02:41,Silvaco学习,17,goathenaLinexloc=0.0spac=0.02Linexloc=1.0spac=0.10Lineyloc=0.0spac=0.02Lineyloc=2.0spac=0.20initc.boron=1e16two.ddepositoxidethick=0.1div=10depositsiliconthick=0.5div=10structureoutfile=origin.strEtchsiliconleftp1.x=0.5structureoutfile=etch_p1x_0.5.strgoathenainitinfile=origin.strEtchsiliconallstructureoutfile=etch_all.strtonyplotorigin.stretch_p1x_0.5.stretch_all.str,刻蚀的例子,02:41,Silvaco学习,18,goathenaLinexloc=0.0spac=0.05Linexloc=2.5spac=0.02Linexloc=5.0spac=0.05Lineyloc=0.0spac=0.02Lineyloc=2.0spac=0.20initc.boron=1e16two.ddepositoxidethick=0.5div=10structureoutfile=mask.strtonyplotmask.str,Etchoxidestartx=1.5y=0.0Etchcontinuex=1.5y=-0.6Etchcontinuex=3.5y=-0.6Etchdonex=3.5y=0.0,后面刻蚀的例子中掩膜即由此得到,刻蚀的例子,02:41,Silvaco学习,19,goathenainitinfile=mask.stretch.tonyplot,刻蚀的例子,02:41,20,Silvaco学习,goathenainitinfile=mask.stretch.tonyplot,外延,外延的命令epitaxy，参数及其说明如下：,02:41,21,Silvaco学习,外延的例子,02:41,Silvaco学习,22,goathenainitinfile=mask.strEpitaxyStructureoutfile=Tonyplot*.str,外延是硅的外延！,抛光,抛光的命令polish，参数及说明如下：,02:41,Silvaco学习,23,抛光的例子,02:41,Silvaco学习,24,goathenainitinfile=mask.strRate.polishoxidemachine=cmpu.mmax.hard=0.15min.hard=0.03isotropic=0.001Polishmachine=cmptime=4minstructureoutfile=polish.strtonyplotmask.strpolish.str,光刻,光刻的步骤及参数很多如mask，illumination，projection，filter，layout，Image，bake，expose和develop下一讲再讲解光刻工艺,02:41,Silvaco学习,25,本讲回顾,介绍了离子注入，扩散，淀积，刻蚀，外