各种半导体LED湿法清洗机

1、各种半导体led湿法清洗机苏州晶洲装备科技施利君,df pe,batch type: conventional type cassette type cassette less type single bath type single wafer type: scrubber sez,wet bench type,wet bench bath configuration,sc1,di,hf,di,sc2,di,di,dry,pre furnace clean,sc1: standard clean 1 sc2: standard clean 2 hf: hydrofluoric acid di

2、: de ionized water,lot flow,typical wet clean bath,p,heat exchanger,filter,pump,process bath,measurement tank,particle pattern defect metal contamination junction leak organic contamination gate oxide leak native oxide gate oxide leak micro roughnesss gate oxide leak,the contamination and its influe

3、nce(沾污及其影响,sc: standard clean, rca: a company name, diw: de ionized water sc-1 (rca1/apm: nh4oh: h2o2: diw), sc-2 (rca2/hpm: hcl: h2o2: diw), caro (spm/piranha: h2so4: h2o2) h3po4(h3po4: diw) boe (buffer oxide etch hf: nh4f) with surfactant（表面活性剂） dhf (dilute hf) dry system (spin dry/ipa vapor dry/m

4、arangoni dry,key word,sc1(ms) light organic & particle remove dhf remove chemical oxide or native ox sc2 removal of metals impurities boe: remove oxide with pr hf/hno3 remove poly film. spm(h2so4:h2o2) photo resist and metals ions h3po4 nitride remove 49%hf remove nitride and thick oxide,chemical ap

5、plication,sc1,typical ratio : nh4oh : h2o2 : di = 1:1:5-1:2:50 temp : 40 80 c mechanism: solution oxidize surface organics and dissolves soluble complexes formed. ph is high low stability of metal impurities nh4oh dissolves sio2 and etches si h2o2 oxidizer, forms layer of chemical oxide deposition o

6、f some species of metals on oxide (e.g. fe, ca,relationship of zeta potentials and ph value,sc2,typical ratio: hcl: h2o2:di = 1:1:5 1:1:50 temp : typical 80c purpose: remove metallic impurities from wafers mechanism（机制）: low ph improves solubility of metallic impurities（低的ph值可以提高金属杂质的溶解度） metallic c

7、hlorides formed (metals like fe,ca can be removed)（形成金属氯化物） h2o2 forms chemical oxide (affect oxide quality,hf,ratio: 100:1- 10:1 temp: typical 23 25 c purpose: silicon dioxide removalnitride removal (rare) 38%hf sio2+6hf sif6 + 2h2o + h2 hydrophobic（疏水）surface produced(particle sensitive,spm(caro,m

8、ain reactive compound : h2s2o5 caros acid typical temp: 130 c chemical ratio : h2so4 : h2o2 = 4:1-6:1 after dry ashing and imp post clean, photo resist remove and light organic remove for pre -clean,si3n4+h2o 3sio2+4nh3 h3po4为催化剂，h2o为主要反应物 typical chemical used : hot h3po4 acid temperature: 150 c to

9、 165 c major use: stripping of nitride mask etch characteristic: isotropic（各向同性刻蚀,h3po4,types of drying methods: spin dry ipa vapor dry (hot ipa) marangoni dry (room temp ipa) hot n2 + ipa fume dry performance indices: drying speed particle level water mark metal impurity,dry technology,monitor tech

10、nique,particle count laser surface scanner particle in bath liquid particle counter metal contamination txrf (icpms)（全反射x荧光） etch rate/uniformity ellipsometer（偏振光椭圆率测试仪） (organic contamination xps（x光电子能谱仪）tof-sims) micro roughness afm（原子力显微镜,for wet bench , we normally monitor particle, etch rate(dh

11、f,h3po4) and txrf items. particle 1wafer/once/ day spec30pcs (0.16m) 2. etch rate 1wafer/once/day txrf(total reflection x-ray fluorescence) 1wafer/once/week use the same wafer as particle test wafer, after particle test,monitor frequency,monitor wafer type,1.particle: h3po4 bath use oxide film wafer

12、, others use bare wafer. if particle count more than 100, need reclaim. 2. etch rate: a.dhf, boe use oxide film wafer(4500a), when film thickness lower than 1000a, need reclaim b.h3po4 use nitride film wafer(1700a), only can use once , then need reclaim,etch rate data,chuck wash/rinse: for chuck/rob

13、ot clean chemical residue over flow: normally after hf/bhf/boe (hot)quick dump rinse: clean chemical residue on wafer final rinse: added resist sensor(水阻值计）, make sure residue remove completely,diw bath/tank,msds: material safety data sheet throughput: wph(wafer per hour) uniformity ： 均匀性 etching ra

14、te: 蚀刻率(delta thickness/sec) chemical life time: 化学液活期,general 名词解释,chemical life count (batch): 化学液批数活期 replenish(spiking)time: 补充时间 circulation rate: 循环速率 measuring tank: 测量槽 mega sonic cleaning: 超声波清洗 inline heater: 在线加热器,heater exchanger: 冷热交换器 pump: 泵，提供循环动力 filter: 过滤器，吸附化学溶液中的杂质 loader/unload

15、er: 入货/出货装置 bg: back grinding 晶圆背面研磨 pr: photo resist 光阻,wet bench configuration,process recipe sample process ppid: f040a60h30 detail recipe: spm(0)+hqdr(0)+0.5hf(40)+of(480)+apm(600)+hcqdr(300)+hpm(300)+qdr(300)+fr(300)+m/d,1.adwgc01 pre gate clean 2.adwra01 rca clean 3.aewps01 pr wet strip 4.aswcp01 coblat pr strip & selective etch 5.adwns01 nitride strip 6.adwoe01 oxide etch(with pr) 7.adwoe02 ox