xx大数字集成电路实验报告-实验2反相器(上)代码

1、method=gear .optionslvltim=2imax=20 gmindc= .p rotect西工大数字集成电路实验报告相器（上）代码实验2反1.2. 计算出这个电路的 VOH VOL及VIH VILVin=0 时，VOH=这样的话根据Vin=时，假设NMOS工作在临界饱和区:WIK/2(VinVT)2ID104ADLVoutVinVTID1RLVoutlD1106AID1ID，器件实际工作在线性区 2VOLW(VinVT)VOLIDKL2IDRLVOLVinW/将 K115106， L，VT RL75kohm代入解得:VOL图得：VOH=, VOL=当VinVout时，NMOS工

2、作在饱和区W2IDK/2(VinVT )LIDRLVout 反相器阈值电压 VMVinVout此时Vout(Vin)2,gVMVVIH|g|VVVOHVM|g|dVout (Vin)-图得：VIH=, VIL= SP 文件:.TITLE CMOS INVERTER .op tions p robe .op tionstnom=25.op tionsingold=2limp ts=30000vdd.libCWs ynop syscmos25_TT .unp rotect.globalMn out in 0 0 NMOS W= L=RL OUT VDD VDD 75kVDD 0VIN IN 0 0

3、.DC VIN 0.op.p robe dc v(out) .end2. 3.分析电路噪声容限。计算 NMH高电平噪声容限）和NML低电平噪声容限）,并使用HSPICE画出反相器的VTC 曲线。NMH=VOH - VIH= NML= VIL- VOL=SP文件: .TITLE CMOS INVERTER .op tions p robe .op tionstnom=25.op tionsingold=2limp ts=30000method=gear .options lvltim=2 imax=20 gmindc= .protect.libC:s ynop syscmos25_TT .unp

4、 rotect.globalvddMn out in 0 0 NMOS W= L= RL OUT VDD 75kVDDVDD 0VIN IN 0 0.DC VIN 0.op.p robe de v(out) .end3. 4. 使用HSPICE画出RL=35k, * 75K , 150k 三种情况下的VTGSP文件:.TITLE CMOS INVERTER.op tions p robe .op tionstnom=25.op tionsingold=2limp ts=30000method=gear .optionslvltim=2imax=20 gminde= .p rotect.libC

5、Ws ynop syscmos25_TT .unp rotect.globalvddMn out in 0 0 NMOS W= L=RL VDD OUT 75k VDDVDD 0.DC VIN 0VIN IN 0 0.p robe V(out) .p robe V(in) .alter.TITLE Exercise RL = 150k RL Vdd out 150k .alter.TITLE Exercise RL = 35k RL Vdd out 35k .end1.5 .对2的结果进行仿真验证。(tran 仿真；输入加脉冲，上升和下降时间都为5ns)图得：tPHL=; tPLH=SP 文件

6、:.TITLE CMOS INVERTER .op tions probe .op tionstnom=25.op tionsingold=2limp ts=30000method=gear .optionslvltim=2imax=20 gmindc= .p rotect.libCWs ynop syscmos25_TT .unp rotect.globalvddMn out in 0 0 NMOS W= L=* RL OUT VDD CL OUT 03p VDD75kVDD 0Vin in 0 P ULSE(0 100n 5n 5n 5u 10u) .TRAN 1n 30u .measur

7、e tran TPHL trig v(in) val= td=1n rise=2targ v(out) +val= td=1n fall=2.measure tran TPLH trig v(in) val= td=1n fall=2targ v(out) +val= td=1n rise=2 .p robe V(out) .p robeV(in) .end1.2. 计算出这个电路的 VOH VOL及VIH VILVin=0 时，VOH=这样的话根据Vin=时，假设NMOS工作在临界饱和区:WIK/2(VinVT)2ID104ADLVoutVinVTID1RLVoutlD1106AID1ID，

8、器件实际工作在线性区2VOLW(VinVT)VOLIDKL2IDRLVOLVinW/将 K1151O6 , L , VT RL75kohm代入解得:VOL图得：VOH=, VOL=当VinVout时，NMOS工作在饱和区W2IDK/2(VinVT )LIDRLVout 反相器阈值电压 VMVinVout此时Vout(Vin)2,gVMVVIH|g|VVVOHVM|g|dVout (Vin)-图得：VIH=, VIL= SP 文件:.TITLE CMOS INVERTER .op tions probe .op tionstnom=25 vdd.op tionsingold=2limp ts=3

9、0000method=gear .optionslvltim=2imax=20 gmindc= .p rotect.libCWs ynop syscmos25_TT .unp rotect.globalMn out in 0 0 NMOS W= L=RL OUT VDD VDD 75kVDD 0VIN IN 0 0.DC VIN 0.op.p robe de v(out) .end 2. 3.分析电路噪声容限。计算 NMH高电平噪声容限）和NML低电平噪声容限）,并使用HSPICE画出反相器的VTC 曲线。NMH=VOH - VIH= NML= VIL- VOL=SP文件: .TITLE CMOS INVERTER .op tions p robe .op tionstnom=25.op tionsingold=2limp ts=30000method=gear .options lvltim=2 imax=20 gmindc= .protect.libCWs ynop syscmos25_TT .unp ro