半导体封装制程与设备材料知识

1、 半导体前段晶圆wafer制程 半导体后段封装测试 封装前段（B/G-MOLD）封装后段（MARK-PLANT）测试 封装就是將前製程加工完成後所提供晶圓中之每 一顆IC晶粒獨立分離，並外接信號線至導線架上 分离而予以包覆包装测试直至IC成品。 Oxidization (氧化处理) Lithography (微影) Etching (蚀刻) Diffusion Ion Implantation (扩散离子植入) Deposition (沉积) Wafer Inspection (晶圆检查) Grind & Dicing (晶圓研磨及切割) Die Attach (上片) WireBonding

2、 (焊线) Molding (塑封) Package (包装) Wafer Cutting (晶圆切断) Wafer Reduce (晶圆减薄) Laser Cut & package saw (切割成型) Testing (测试) Laser mark (激光印字) IC制造制造开始开始 前段結束前段結束后段封装开始后段封装开始 製造完成製造完成 IC封装型式可以分为两大类，一为引脚插入型，另一为表面黏着型 构装型态构装名称常见应用产品 Single In-Line Package (SIP） Power Transistor Dual In-Line Package (DIP） SRAM,

3、 ROM, EPROM, EEPROM, FLASH, Micro controller Zigzag In-Line Package (ZIP） DRAM, SRAM Small Outline Package (SOP） Linear, Logic, DRAM, SRAM Plastic Leaded Chip Carrier (PLCC） 256K DRAM, ROM, SRAM, EPROM, EEPROM, FLASH, Micro controller Small Outline Package (SOJ） DRAM, SRAM, EPROM, EEPROM, FLASH Quad

4、 Flat Package (QFP）Microprocessor BALL Grid Array (BGA）Microprocessor Through Hole Mount Shape MaterialLead PitchNo of I/O Typical Features Ceramic Plastic 2.54 mm (100miles) 8 64 DIP Dual In-line Package Plastic 2.54 mm (100miles) 1 direction lead 325 SIP Single In-line Package Through Hole Mount S

5、hape MaterialLead PitchNo of I/O Typical Features Plastic 2.54 mm (100miles) 1 direction lead 1624 ZIP Zigzag In-line Package Plastic 1.778 mm (70miles) 20 64 S-DIP Shrink Dual In-line Package Through Hole Mount Shape MaterialLead PitchNo of I/O Typical Features Ceramic Plastic 2.54 mm (100miles) ha

6、lf-size pitch in the width direction 2432 SK-DIP Skinny Dual In-line Package Ceramic Plastic 2.54 mm (100miles) PBGA Pin Grid Array Surface Mount Shape MaterialLead PitchNo of I/O Typical Features Plastic 1.27 mm (50miles) 2 direction lead 8 40 SOP Small Outline Package Plastic 1.0, 0.8, 0.65 mm 4 d

7、irection lead 88200 QFP Quad-Flat Pack Surface Mount Shape MaterialLead PitchNo of I/O Typical Features Ceramic 1.27, 0.762 mm (50, 30miles) 2, 4 direction lead 2080 FPG Flat Package of Glass Ceramic 1.27,1.016, 0.762 mm (50, 40, 30 miles) 2040 LCC Leadless Chip Carrier Surface Mount Shape MaterialL

8、ead PitchNo of I/O Typical Features Ceramic 1.27 mm (50miles) j-shape bend 4 direction lead 18124 PLCC Plastic Leaded Chip Carrier Ceramic0.5 mm32200 VSQF Very Small Quad Flatpack Die Cure (Optional) Die BondDie SawPlasma Card AsyMemory TestCleanerCard Test Packing for Outgoing Detaping (Optional) G

9、rinding (Optional) Taping (Optional) Wafer Mount UV Cure (Optional) Laser markPost Mold CureMoldingLaser CutPackage Saw Wire Bond SMT (Optional) TesterDigitalCredenceSC312 DigitalTeradyneJ750 Mix-SignalCredenceQuartet one and one+ Mix-SignalHPHP93000 P600 Mix-SignalHPHP93000 C400 Mix-SignalTeradyneC

10、atalyst RFHPHP94000 Flash & SRAM CredenceKalos Mix-SignalYokogawa HandlerBGA/QFPSeiko EpsonNS-6000 ProberWaferTSKTSK200/UF300 Lead Scanner BGA/QFPRVSILS/GS5700 Tape & ReelBGAReel Tech MTTR3000 SocketBGA/MLFJohnstech Burn-InBGA/MLFSSEB1120M SOP-Standard Operation Procedure FMEA- Failure Mode Effect A

11、nalysis SPC- Statistical Process Control DOE- Design Of Experiment IQC/OQC-Incoming/Outing Quality Control MTBA/MTBF-between assit/Failure UPH-Units Per Hour CPK-品质参数 1.GRINDING 工艺 l 研磨 1 . 研磨分為粗磨與細磨,晶圓粗糙度需小於0.08um. 2 . 細磨厚度在1020um之間,而二次研磨參數中,細磨厚度為 15um(二次研磨變更作業膠膜為230um). 3. 研磨標準厚度: a. HSBGA :1113MI

12、L 標準研磨厚度為 12MIL b. PBGA : 1116MIL 標準研磨厚度為12MIL. c. LBGA : 9.510.5MIL 標準研磨厚度為 10MIL. 5.研磨時機器會先量側晶片厚度以此為初始值 , 粗磨厚度及最 終厚度(即細磨要求的厚度). Spindle1 粗磨 spindle2 細磨 清洗區 離心 除水 離心除水 背面朝上 Wafer 研磨時晶圓與 SPINDLE轉向 2.Grinding 相关材料 A TAPE麦拉 B Ginding 砂轮 C WAFER CASSETTLE TAPE種類: a. AD WILL D-575 UV膠膜 (黏晶片膠膜 白色)厚度 150U

13、M b. AD WILL -295黏晶片膠膜黑色厚度120UM c. AD WILL S-200 熱封式膠帶(去膠膜膠帶)白色 厚度 d. FURUKAWA UC-353EP-110AP(PRE-CUT) UV膠膜 白色 厚度110um e. FURUKAWA UC-353EP-110A UV膠膜白色厚110um f. FURUKAWA UC-353EP-110BP UV TAPE 白色厚110um. g. AD WILL G16 P370 黑色厚80UM. h. NITTO 224SP 75UM 3.Grinding 辅助设备 A Wafer Thickness Measurement 厚度

14、测量仪 一般有接触式和非接触式光学测量仪两种； B Wafer roughness Measurement 粗糙度测量仪 主要为光学反射式粗糙度测量方式； 4.Grinding 配套设备 A Taping 贴膜机 B Detaping 揭膜机 C Wafer Mounter 贴膜机 T Taping aping 需確認wafer是否有破片或污染或者有氣泡等等現象.特别是 VOID；上膠膜後容易發生的defect为龟裂或破片； 切割 正面 上膠 上膠 電腦偵測方 向 取出 背面朝 下 D Detapingetaping l Wafer mount Wafer frame 1.Dicing 设备介

15、绍 A DISCO 641/651 系列 B ACCERTECH 东京精密200T/300T Blade Close-View Blade Cutting WaterN ozzle Cooling Water Nozzle Twin-Spindle Structure Rear Front X-axis speed: up to 600 mm/s Cutting speed: up to 80 mm/s 2.Dicing 相关工艺 A Die Chipping 芯片崩角 B Die Corrosive 芯片腐蚀 C Die Flying 芯片飞片 Wmax , Wmin , Lmax , DD

16、Y ,DY 規格 DY 0.008mmWmax 0.070mmWmin 0.8*刀 厚Lmax 80 o 8 o Organic Contamination vs Contact Angle Water Drop Chip Chip 设备介绍 A TOWA Y1-SERIES B ASA ONEGA 3.8 Towa Auto Mold Training 机器上指示灯的说明：机器上指示灯的说明： 1、绿灯机器处于正常工作状态； 2、黄灯机器在自动运行过程中出现了报警提示，但机器不会立即停机； 3、红灯机器在自动运行过程中出现了故障，会立即停机，需要马上处理。 机器结构了解机器结构了解正面正面 指示灯 主机 Tablet 压机 人机界面 紧急停机按钮紧急停机按钮 Towa Auto Mold Training 机器结构了解机器结构了解背面背面 CULL BOX 用来装切下来的料饼； OUT MG 用来装封装好的L/F； 配电柜用来安装整个模机的电源和PLC，以及伺服电