电子信息工程专业一种新型的集成电路片上CMOS温度传感器毕业论文外文文献翻译及原文

1、毕业设计（论文） 外文文献翻译文献、中巨：一种新型的集成电路片上cmos温度传感器文献、资料英文题目：文献、资料来源： 文献、资料发表（出版）日期：院（部）：专业：电子信息工程班级：姓名：学号：指导教师: 翻译日期:2017. 02. 14普通本科毕业设计（论文）外文翻译文献题目一种新型的集成电路片上cmos温度传感器a novel built- in cmos temperature sen sor for vlsicircuitswang nailong，zhang sheng and zhou runde(institu te ofm icroelectronics, t sing hu

2、a u niversity , b eij ing 100084, chinci)abstract: a novel temperature sensor is developed and presented especially for the purpose of online the rmalmoni to ring of vlsi chips. this sensor requires very small silicon area and low power consumption，and the simulation results show that its accuracy i

3、s in the o rder of 018°c. the proposed sensor can be easily implemented using regular cmos process techno logies，and can be easily integrated to any vls i circuits to increase their reliability.key words: temperature sensor; thermal testability; frequency output.eeacc: 1265a; 2560; 2570dclc num

4、ber: tn 47 document code: aarticle id: 025324177(2004) 03202522051 introductiondue to the advances in the fabricaion process field of in tegrated circu its，the component den sityand the overall power dissipat ion of the high per fo rmance vlsi chips increase cont inuously. at the beginning of this c

5、entury，the power dissipated in asingle ch ip has exceeded 100w，and tightly packed chip assemblies as themultichip modules can even dissipate thou sandswatts. therefore, the thermal state of integrated circu its has been always a great prob lem concerned and is considered as a bottle neck in increasi

6、ng the in tegrat ion of elect ron ic system s.to overcome this problem，many researchers developed low 2power design techn iques for vls isystems. in order to avoid thermal damages，continuous thermal monitoring should be appliedduring both the production reliability testing and the field operation. a

7、n eff icient way is to buildtemperatu resensors in to all vlsi chips，with theapp ropriate circuitry p roviding easy readout. insome earlier works，the researchers used theparasitic，lateral or sub strate bipolartran sistors,which can be realized in mo st of the cmos processes，as thermal sen so rs. the

8、se are u sually ptat sensors. the weakness of these senors is that the bipolar structu resare not well characterized in a mos process. thus，although they canp rovide a sat isf iect solution for a given process，thecircu its can not be regarded as a general cmos approach and can not be widely used.2 p

9、roblem formulationthere are various temperature sensors suitable for the rmalstate verification of in tegrated circuit microstructures such as the rmoresistors，pnjunctions, and the exploitation of the weakinversion of mos transistors. our objective is to convert the temperature to an oscillat ing si

10、gnal to make it compat ib le to digital circu it design method and facilitate the evaluat ion of the temperature sensed. a temperatu re sen so r based on a ringo scillator is introduced in ref” this cell guarantees a accuracy of 3 °c that is marginally accep table as a chiptem perature sensor b

11、ut the silicon area required is rather big. amos temperature controlled oscilla to risused as asensor to monitor the thermal state of microelectronic structu res in ref. how ever，this sensor requires about 10 to 15mw power to drive the thermal delay line and the dissipatertran sistor.to overcome the

12、se inconven iences，w e th inkthat the temperature sensors to be used as builtinun its for vlsi circuits online the rmalmoni to ring should meet some special requirements as follows:(1 ) nearly linearity in a temperatu rerange(usually 0100°c);(2 ) low power consumption (no more than 1 mw );(3 )

13、simple structure and small silicon area(usually no more than 40 transistors);(4 ) easy read out results with favorably digital output signal (e. g.，the frequency of asquare wave which carries the temperature information);(5 ) easy (one point) calib rat ion;(6 ) high accu racy (in the order of 2 

14、6;c or less);(7 ) compat ib ility w ith the p resen t cmo sp rocess;con sidering the given requ irements，we present a new builtin temperatu resensor meeting all the above requirements3 built- in thermal mon itor ing sensorour new temperature sensoris a voltage controlled relaxation o scillato rbased

15、temperature sensor shown in fig. 1. the circuit consists of two parts, a voltageout put sensor and a relaxation oscillator.vollage-output sereprrelaxation oscillatorf ig. 1 temperature sensor designed based on a voltage2cont ro lied relaxation oscillator3.1 voltage-output sen sorour voltage output s

16、ensor circuit exploits the temperature dependence of themosimportant parameter of the mos transistor, namely, the thresh old voltage (vt ).the thresh old voltage has a negative temperature coeff icient as:vt(t) = vt (t0) + a(t- to) (1)where a is the temperature coeff icient with atypical value of -

17、118mvok in cmos 0135lm 5v technology; v t (t 0 ) is the value of the th reshold voltage attemperatu re to.as shown in fig. 1, the voltage output sensor is a th reshold voltage reference cell. the pchannelt ransistors pl，p2 constitu teacurrent mirror. the current of transist or n1 is mirrored to tans

18、istors n 2，n 3, and n 4. the vo ltage drop on these t ran sistors isfed back to the gate of n 1. fo r easy calculat ing，we choose asame size of the transistors n 2，n 3, and n 4 (bn 2= bn 3= bn 4)，and we choose approp riatesize of the other transistors to ensure that the transisto rs pl, p2, n 1，n 2,

19、 n 3, and n4 are all in the state of saturation. then the out put voltages of th is sen so r are in direct proportion to the thresh old voltage and linear with temperature and their values are:v h= v t ( 1 +2kpi2kp12- 3kni2)= kv (t)v l= vt(1 +2kn 12kpi2 - 3k 12)=2vt(3)whereis determined by the ratio

20、 between the gatesizes of the nchannel t ransistor n 1 and n 2, and 12 is the ratio of the gate sizes of the pchannel transistor pl and p2.（4）by adju st ing the sizes of the t ran sis to rs, w efoundshou id be b iggerthan threetimes of,when the transistors pl，p2, n 1，n 2, n 3, and n 4 are all in the

21、 state of saturat ion.the advantages of th is circuit arrangeme t arethe simplicity and the stable outpu t. a n important feature is that the output voltages of v h and vlarepractically independen t of the supply voltage (vdd).3. 2 voltage-con trolled relaxa t ion osc ilia torthe quick in terfacing

22、of the analogue，current output sensor with the digital environmen t is not asimple task. to overcome this problem we usea voltage controlled relaxat ion oscillato r as the voltage frequency converter. the output signal of th isconverter is asquare w ave，the frequency of which carries the temperatu r

23、e info rmation. this frequency can be easily turned in to adigital number bycoun ting the square wave pulses in a prescribedt ime window.as shown in f ig. 1, the curren t of the resist。rism irro red using thet ran sisto rs p3, p4, p5，n5，n6 to provide the same sou rce and sink current s to charge and

24、 discharge thecapacitor c. assum ing thein it ial value of the/o sc is logic 0, then the t ran sistor p6 is on and the t ran sisto rn 7 is off cau sing the capacitor c to be charged using the source curren t /un t il v cexceeds the upper th resho id v h. w hen th isoccu rs, the output latchtoggles a

25、nd the logic valueof/o sc becomes logic 1，w hich in turn makes thet ran sistor p6 off and the tran sistor n 7 on. th ismakes the capacitor c to be discharged by the sinkcu rren t until the capacit r voltage falls below alowerthreshold v l at w h ich t ime the en t ire cyclerepeats. n eglecting the d

26、elay of the comparatorsjatch and transistors p6 and n 7, the oscillation cycle time should be:2cgb th current i is given by:/= (fdd - v gsp3) /r 5(7)as the current is small and the w ol rat io of the transistor p3 is chosen to bebig in this designthe v gsp can be appro ximated to the th reshold volt

27、age of the transistor pi and therefo e the currentcan be approximated byi = (rdd - rt)as(8)and the temperature dependence of the resistor rs iss(r) = 5(r0) (i + mr)(9)where k is the temperatu re coeficien t of the resistor,with typical value h 255x10- 66°c fo r polysilicon sheet resistor in the

28、 cmos 0135lm 5v technology.therefore，the oscillation cycle time is foundto bet osc2coi -vdd - kt1c (kki (fto + atr sfto) (l + md(vddrt0) (lvdd - v toar)const x 1 + k +avdd(rddv to) 7 toa7const x (1 +)(10)this equation implies that the cycle t ime ofthe relaxation oscillator is nearly linear with tem

29、perature, and then the f requency of the o scillator isoscoc1 + fyat(ll)4 simulation results and discuss ionthe simulation result of the voltage output the rmalsen sorisillustrated in f ig. 2, and the varia ion of the relaxat ion oscillator based sensor oscillation cycle t ime and f requency versus

30、the ch iptemperatu re is shown in fig. 3.to evaluate a buildin thermal sensor，thereare three important characterist ics: accu racy，sili2con area ( transistor number )，and power020406080100a/orrcfig 2 output voltage versus temperature diagram for the voltage-output sensor1.3051il2020 4o 6c 301007zvfi

31、g 3 o sc illation frequency and cycle tme of the relaxatbn oscillator-based sensordissipation. the characterist ics of our voltage cont rolled relaxation oscillator based sensor is shown in table 1:table 1 summary of mportant characteristics of the developed temperature sensorcharacteristicvaluea ec

32、u racyq 8'ctransistor number34power dissatbnq 15mwnorn inal frequencyl 氷ihz5 conclusionin this paper，apractical and efficient built intemperatu resensor for thermalmonito ring of the integrated circuits is in troduced. the main advantages of the presented chip temperature sensors are low silicon

33、 area，low power dissipation，digital output inform of oscillation frequency，high accuracy,and easily implemented using regular cmos process techno logies. therefore，this sensor can beeasily in tegrated to any vlsi circu it s to increasecircu it sreliab ility.references1 chandrakasan a，shengs，broderso

34、n r. low 2power cmos digital design. ieee j so lid2state circuits, 1992, 27 (4): 4732 nebelw，mermet j. low power design in deep subm icronelectronics. boston: kluwer a cadem ic publishers, 1997,chap ter 4. 13 montane e，bo ta s a，sam itier j. a compact temperature sen2so r of a 1 lolm cmostechno logy

35、 using lateral pn p transis to rs. in: p roc therm in ic96wo rk shop, 1996: 454 bianch i r a，karam j m，courto is b. cmos compatible tem2perature senso r based on the lateral bipo lar transisto r fo rvery w ide temperature range app lications. senso rs anda ctua2to rs a: physical, 1998, 71 (162): 35

36、quenot g m，paris n. a temperature and voltage measurement cell for vlsi circuits. in: euro2a sic91，1991: 3346 szekelyv，renczm. thermal test andmonito ring. proceeding of the european design and test conference, 1995: 6017 a rabi k，kam inska b. built2in temperature senso rs fo r online thermal monito

37、 ringof m icroelectronic structures. ieeeinternational conference on computer design, 1997:8 boschb. a thermal o scillato rusing the thermoelectron ic ( seeback) effect in silicon. solid2state electron, 1976, 12: 3729 szekely v，m arta c，kohari z，etal. cmos sensors for online thermal monito ring of v

38、lsi circuits. ieee t vans vlsisyst，1997,5 (3): 270 10 huang yip ing，zhu shiyang, liaizhen，et al. high temperature pressure sensor fabricated with smartcut so imaterials.chinese journal of sem iconductors， 2001，22 (7): 924 (in chinese)一种新型的集成电路片上cmos温度传感器減屢：介绍了一种可以用于片上温度监控的cmo s温度传感器，该传感器具有面积小、功耗低、精度

39、高、易于实现等优点，可以比较容易地集成到芯 片上实现温度监测功能.系謎询：温度传感器；热可测性；频率输出eeacc: 1265a; 2560; 2570d中图分类号：tn 47文献标识码：a文章编号：025324177 (2004) 03202522051 w書由于集成电路制造工艺领域的先进性，该组件密度和高表现所整体功耗超大 规模集成电路芯片不断增加。在本世纪开始，电力消耗一个单一芯片的电力消耗 己经超过100瓦，而紧凑的多芯片模块，甚至可以驱动数千瓦的芯片集。因此， 在集成电路中的热态一直都是一个受到最大关注的问题，冋吋也成为了提高电子 系统的集成度的一个瓶颈。为了克服这个问题，许多研究人

40、员在超大规模集成电路系统开发了低功耗设 计技术。为了避免热损失，在可靠性试验和实地操作过程中应用持续热监测。一 种有效的方法是在所有大规模集成电路芯片中应用温度传感器，冋吋为适当的电 路提供便利的读出。在一些早期的工作中，研究人员使用的寄生，横向或衬底双 极晶体管，它可以在cmos中最进程，实现热传感器。这些通常是正比绝对温度 传感器。这些传感器的弱点是，在才cmos工艺中两极结构特点不是很好。所以， 虽然他们可以为一个给定进程提供一个满意的解决方案，但这种电路不能被视为 一般的cmos方案，因而不能被广泛使用。2问题陈述现在有适合各种温度传感器集成电路微结构的热态验证，如能热电阻，pn路口，

41、以及弱反转开发的cmos晶体管。我们的h标是要转换温度的振荡信号， 使其兼容数字电路设计方法，促进温度效应评估。在文献5介绍了一个基于环 形振荡器温度传感器，这个细胞是轻微的温度传感器芯片，保证了精确的3°c， 但芯片面积需耍相当大。在文献6中介绍了温度控制的cmos振荡器，它作为一 个传感器来监测微观电子结构的热状态。不过，为了驱动热延时线和消能晶体管 该传感器大约需要10至15毫瓦的能量。为了克服这些不便，我们认为，温度传感器被用来作为内置的vlsi电路在线 热监测单位耍满足一些如下的特殊耍求：为了克服这些不便，我们认为，温度传 感器被用来作为内置的vlsi电路在线热监测单位要满

42、足一些特殊要求，遵循如 下：（1）在近线性的温度范围内（通常为010（tc）;（2）低功耗（不超过1毫瓦）；（3）结构简单，芯片面积小（通常不超过40个晶体管）；（4）容易读出的结果与毫不逊色数字输出信号（例如，一个方波的频率进行温 度信息）；（5）易（1点）校准；（6）高准确度（在命令2°c或以下）；（7）本cmos工艺兼容性；考虑到给定的耍求，我们提出一个新的内置温度传感器满足所有上述耍求。3.内置热监测传感器我们的新的温度传感器是一个电压为本位弛张振荡器的温度传感器在图1所 示。该电路由两部分组成，电压输出传感器和一个放松操作系统振荡器。vnlta-autput netirpr

43、rekutkm oscillator图1一种基于电压控制轻松振荡器设计的温度感应器3.1电压输出传感器我们的电压输出传感器电路利用的温度参数取决与最重要的cmos品体管温 度参数，也就是说，阈值电压（vt）。阈值电压有一个负温度为vt(t)= vt(r() + « (t- to)(1)其屮a是一个典型的温度系数值-在0.35微米的cmos中电压为5v时为 1. 8mv / k, kt (70 )是在温度to的阈值电压值。正如图1所示，传感器输出电压的阈值电压作为参考单元。它的p结通道由晶体管 的pl，p2构成丫电流。该晶体管n1的晶体管电流镜像到n2, n3,和n 4。对这些 晶体管

44、的压降反馈到了n1门。为了便于计算，我们选择了同样大小的晶体管n 2, n 3, and n 4 (bn 2= bn 3= bn 4)，我们选择其他适当大小的晶体管，以确保该 晶体管的pl，p2, nl, n2, n3,和n4是都在饱和的状态。然后，该传感器的输 出电压成正比，电压和阈值随温度线性和它们的值是v h = v t ( 1 +2kpi2/kpi2- 3kn 12)= vt (2)v l= vt(1 +2kn 12/kp)2 - 3kn 12)= klvl (3)其中kp 12取决于咐勾道晶体管n1的和n 2门大小的比例，kp12取决于p沟道晶 体管的栅极体积比p1和p2。1jrtj

45、nl/lyi rr n2/t n：当晶体管的pl，p2, nl，n2, n3和n 4在饱和状态时，通过调整晶体管的大小，我们发现儿12应大于3倍儿、q2。该电路安装的好处是简单和稳定的输出。一个重要特点是，输出电压的vii 和vl几乎与电源电压(y/w)独立。3.2压控轻松振荡器该模拟接ui快，在数字环境传感器电流输出不是一个简单的任务。为了克服 这个问题，我们使用电压频率转换器的电压控制轻松振荡器。这个转换器的输出 信号是方波，其中在频率中带有温度信息。通过计算在规定的吋间窗u的方波脉 冲，这个频率可以很容易地变成数字量。正如图1所示，电阻器的电流镜像使用晶体管p3, p4, p5, n5,

46、 n6,提供相 同的源和汇电流来支持电容c的充电和放电的。假设fosc初始值为逻辑0,那么 就和晶体管p6是接通的，晶体管p7是关闭，造成的电容c放电，以至于使源电流t 直到vc值超过最高限额的vh。当发生这种情况，输出锁存器切换和f(xsc逻辑值变 成逻辑1，这反过来可以使晶体管p6关闭和晶体管n7接通。这使得电容c就出现放 电，直到电容电压下降到低于下限vl的，届吋整个周期重复。忽略了比较器的延 迟，闭锁和晶体管p6及n 7,振荡周期应该是：7o sc =2r (rh - r l )/i=2c (a 1 - a2) kt/ (6)给出的电流1= odd - r gsp3)/7?s(7)在这

47、个设计中，由于电流小，而晶体管p3的w / l比较大，rgsp3可以近似为晶 体管的阈值电压p1，因此电流可以近似 i = (r dd - r t vrs(8)而最大的温度依赖电阻rs7? s (7) = 7? s (70) (1 + a a7)(9)其中k是电阻器在0. 35微米5伏技术cmos多晶体硅的温度系数典型值 k =255x 1()。因此，可以发现振荡周期_ 2c0r-tok= fed- ft_2co:-(厂t3+ nadt? jtc) (1 + fcat-const x1+ fc+=const x (1 + 於r)(10)这个方程意味着放宽振荡器的周期时间几乎与温度线性，那么振荡

48、器频率 f o scoci/1 + ba7(11)4仿真结果和讨论该温度传感器电压输出如图2所示，同时振荡器的传感器振荡周期时间和频 率与芯片温度的变化如图3所示的仿真结果。阁2电压输出传感器的输出电压与温度的关系阁电压输出传感器0.8ilv /j j a j js/j阁3放宽振动器传感器振荡频率和振荡周期时间评价一个内置的热传感器，有三个重要特性：准确性，芯片面积（晶体管数 量）和功耗。电压控制振荡器松弛基于传感器的特性见表1表1 已幵发的温度传感器的温度特征特性值准确度0.8 0晶体管数目34功耗0. 15毫瓦标准频率1. 3兆赫5结论在这篇文章中，提出了一种实用，高效内置的集成电路热监测温度传感器。 所提出的温度传感器芯片的主耍优点是低硅面积，功耗低，振荡频率数字外置， 高淮确度的形式，并轻松实现使用常规cmos工艺技