KLA缺陷检查培训PPT课件

1、21xx Capabilities2第1页/共24页3第2页/共24页Run Overview4第3页/共24页Run one waferInspection Queue5第4页/共24页6第5页/共24页7第6页/共24页8第7页/共24页9第8页/共24页Stopping the Inspection10第9页/共24页Defect Overview To improve production yields, defects need to be monitored and statistically analyzed at each stage of wafer production.1

2、1第10页/共24页Defect Sort1.False : Found nothing after review with inspection data.2.Unkown : Defects were found but there is no suitable defect code to assign.3.Fall on particle : Particle on surface of patten. 4.In film particle : Particle was contained in film, such as poly, HDP, metal and so on.HDPP

3、oly12第11页/共24页5.Scratch : Especially for scratch caused by robot , other tool parts or man-made. Defect map :Defect iamge:MicroMacro13第12页/共24页6.Discolor : Color difference7.Masking ：Should be etched but still remian(poly,SiN,spacer,metal and so on). Some connect more than two lines,its bridge(kille

4、r).14第13页/共24页8.Ring like defect: Such as defects caused by ARC splash, usually related to PHOTO.PolyMetal9.Grape like defect:Induces by PHOTO PU.15第14页/共24页10.Residue ：Always happen after wet station clean.11.Patten abnormal : Roughness,Defocus,Patten shift and so on.RoughnessDefocusPatten shiftPat

5、ten Abnormal16第15页/共24页12.Concave: COP（ Crystal oriented pits ）, Oxide Loss，Pits.13.Peeling : Pattern shift or missing（W plug is one of peeling,always appear at wafer edge.） 17第16页/共24页14.Blind : CT or Via have not been opened.15.Patten damage : Metal damagePoly broken is patten damage too,always ha

6、ppen during High Imp.18第17页/共24页16.W Residue : 1). Caused by Oxide Loss; 2). Caused by CMP.NORMAL ABNORMAL17.Under_Pat ：Under layer pattern fail issue.19第18页/共24页18. Salicide_abnormal:Salicide poor formation.19.Grain : Including poly or metal grain.20第19页/共24页20.Slurry: 21.PR /Polymer_remain :PR has not been stripped completely, typically contains Carbon21第20页/共24页22.Arcing:23.Line open:22第21页/共24页24.Corrosion : Caused by etch strip cha