半导体工艺学silvaco仿真实例——扩散

1、Indium Implant and Anneal1 go athena23 #TITLE: Indium Anneal45 #the x dimension definition6 line x loc = 0.0 spacing=0.17 line x loc = 0.1 spacing=0.189 #the vertical definition10 line y loc = 0 spacing = 0.0211 line y loc = 2.0 spacing = 0.201213 #initialize the mesh14 init silicon c.phos=1.0e14151

2、6 #perform uniform boron implant17 implant indium dose=1e13 energy=70 monte18 structure outfile=andfex12_0.str1920 #perform diffusion21 diffuse time=30 temperature=1000222324 extract name="xj" xj silicon mat.occno=1 x.val=0.0 junc.occno=12526 #save the structure27 structure outfile=andfex1

3、2_1.str2829 tonyplot -overlay andfex12_0.str andfex12_1.str -set andfex12.set3031 quitOxidation Enhanced Diffusion of Boron1 go athena23 # OED of Boron45 #the x dimension definition6 line x loc = 0.0 spacing=0.17 line x loc = 0.1 spacing=0.189 #the vertical definition10 line y loc = 0 spacing = 0.02

4、11 line y loc = 2.0 spacing = 0.2012 line y loc = 25.0 spacing = 2.51314 #initialize the mesh15 init silicon c.boron=1.0e141617 #perform uniform boron implant18 implant boron dose=1e13 energy=701920 #set diffusion model for OED21 method two.dim2223 #perform diffusion24 diffuse time=30 temperature=10

5、00 dryo225 #26 extract name="xj_two.dim" xj silicon mat.occno=1 x.val=0.0 junc.occno=12728 #save the structure29 structure outfile=andfex02_0.str3031 # repeat the simulation with default FERMI model32 go athena3334 #TITLE: Simple Boron Anneal3536 #the x dimension definition37 line x loc =

6、0.0 spacing=0.138 line x loc = 0.1 spacing=0.13940 #the vertical definition41 line y loc = 0 spacing = 0.0242 line y loc = 2.0 spacing = 0.2043 line y loc = 25.0 spacing = 2.54445 #initialize the mesh46 init silicon c.phos=1.0e144748 #perform uniform boron implant49 implant boron dose=1e13 energy=70

7、5051 #select diffusion model52 method fermi5354 #perform diffusion55 diffuse time=30 temperature=1000 dryo256 #57 extract name="xj_fermi" xj silicon mat.occno=1 x.val=0.0 junc.occno=1585960 #save the structure61 structure outfile=andfex02_1.str6263 # compare diffusion models64 tonyplot -ov

8、erlay andfex02_0.str andfex02_1.str -set andfex02.setEmitter Push Effect1 go athena23 #TITLE: Emitter push effect example4 #5 line x loc=0.0 spac=0.26 line x loc=2.5 spac=0.87 line x loc=3.0 spac=0.28 #9 line y loc=0.00 spac=0.0410 line y loc=0.3 spac=0.0611 line y loc=2.0 spac=0.812 line y loc=10.0

9、 spac=2.013 #14 init c.phos=1e1515 #16 implant boron dose=1e13 energy=4017 #18 deposit nitride thick=.2 div=419 #20 etch right nitride p1.x=2.521 relax y.min=1.522 #23 implant phosphor dose=1e16 energy=3024 #25 etch nitride all26 #27 method compress full.cpl28 diffuse time=30 temp=100029 #30 structu

10、re outfile=andfex07.str31 #32 tonyplot -st andfex07.str -set andfex07.set3334 quitDamage Enhanced Diffusion of ArsenicThis example demonstrates the damage enhanced diffusion effect in a heavy arsenic implant typicalof MOS source/drain or bipolar emitter processing.1 go athena23 #the x dimension defi

11、nition4 line x loc = 0.0 spacing=0.15 line x loc = 0.1 spacing=0.167 #the vertical definition8 line y loc = 0 spacing = 0.0059 line y loc = 2.0 spacing = 0.2010 line y loc = 25.0 spacing = 2.51112 #initialize the mesh13 init silicon c.boron=1.0e171415 #deposit screen oxide16 deposit oxide thickness=

12、0.005 div=21718 #perform arsenic implant with damage19 implant arsenic dose=1.0e15 energy=40 tilt=7 unit.damage dam.factor=0.12021 #set diffusion model for TED22 method full.cpl2324 #perform diffusion25 diffuse time=15/60 temperature=100026 #27 extract name="xj_fullcpl" xj silicon mat.occn

13、o=1 x.val=0.0 junc.occno=12829 #save the structure30 structure outfile=andfex03_0.str3132 # repeat the simulation with FERMI model3334 #the x dimension definition35 line x loc = 0.0 spacing=0.136 line x loc = 0.1 spacing=0.13738 #the vertical definition39 line y loc = 0 spacing = 0.00540 line y loc

14、= 2.0 spacing = 0.2041 line y loc = 25.0 spacing = 2.54243 #initialize the mesh44 init silicon c.boron=1.0e174546 #deposit screen oxide47 deposit oxide thickness=0.005 div=24849 #perform arsenic implant with damage50 implant arsenic dose=1.0e15 energy=40 tilt=7 unit.damage dam.factor=0.15152 #set default model53 method fermi5455 #perform diffusion56 diffuse time=15/60 temperature=100057 #58 extract nam